Abstract: A control circuit controls a driving transistor connected in series with an electrical load between a power supply voltage and a ground. The control circuit includes a pull-up resistor connected at one end to a power supply voltage side of the driving transistor, a current detection resistor for detecting an electric current flowing from the driving transistor to the ground, a current mirror circuit including a starting transistor connected between the pull-up transistor and the current detection resistor. The current mirror circuit supplies a mirror current of the electric current. The control circuit further includes a current source circuit for supplying a driving current to a control terminal of the driving transistor in accordance with the mirror current to turn ON the driving transistor in response to an external control signal.

Abstract: In a transmitter device of a smart entry system for a vehicle, a transmitter antenna is provided between a variable power circuit and the ground, and is controlled by a switching circuit to transmit a searching radio wave. The transmission power of the antenna, that is, a range of reach of the searching radio wave is variably controlled by a drive output voltage applied to the antenna by a variable power circuit, which converts a battery voltage to the drive output voltage. Data to be transmitted in the searching radio wave is not used to modulate the drive output voltage but is used in an ON/OFF control of the switching circuit.

Abstract: In a semiconductor device 10 including a structure where transfer electrodes 2a to 2c are disposed on a semiconductor substrate 1 via an insulation layer 3, a first semiconductor region 4 of a first conductivity type, a second semiconductor region 5 of a conductivity type opposite to the first conductivity type, and a third semiconductor region 6 of the first conductivity type in a position that overlaps a region of the semiconductor substrate 1 directly underneath the transfer electrodes 2a to 2c. The second semiconductor region 5 is formed on the first semiconductor region 4. The third semiconductor region 6 is formed on the second semiconductor region 5 so that a position of a maximal point 8 of electric potential of the second semiconductor region 5 when being depleted is deeper than a position of the maximal point 8 in a case where the third semiconductor region 6 does not exist.

Abstract: In a disconnection detecting mode, first and second MOSFETs are turned off, a transistor is turned on, and charges of a capacitor are initialized. After that, third and fourth MOSFETs are alternately turned on/off by drive signals and having a complementary relation. When an antenna is connected normally, a pulse AC signal is transmitted to an output terminal via the antenna, and current flows from the output terminal into the capacitor via a resistor, a diode, and a resistor. When a voltage across terminals becomes equal to or higher than a determination reference voltage, a disconnection detection signal is changed to the H level (a connection state).

Abstract: A control circuit controls a driving transistor connected in series with an electrical load between a power supply voltage and a ground. The control circuit includes a pull-up resistor connected at one end to a power supply voltage side of the driving transistor, a current detection resistor for detecting an electric current flowing from the driving transistor to the ground, a current mirror circuit including a starting transistor connected between the pull-up transistor and the current detection resistor. The current mirror circuit supplies a mirror current of the electric current. The control circuit further includes a current source circuit for supplying a driving current to a control terminal of the driving transistor in accordance with the mirror current to turn ON the driving transistor in response to an external control signal.

Abstract: Disclosed is a donepezil-containing transdermally absorbable preparation which develops reduced adverse side effects and shows a satisfactory level of therapeutic effect. The preparation comprises an adhesive and a donepezil component (containing crystalline donepezil having type-B crystal polymorphism) and/or a salt thereof, wherein the donepezil component or the salt thereof is contained in an amount of 9 to 50% by mass relative to the total weight of the adhesive. The preparation (particularly, one having a non-aqueous adhesive layer) shows an excellent penetration of donepezil and/or a salt thereof into the skin, retains good stability of the active ingredient therein, and is remarkably reduced in local stimulation and adverse side effects.

Abstract: An inflator for an air bag which can be assembled easily is provided. An igniter 30 is fixed inside a closure 20 using a resin 28 by charging molten resin through a resin charging hole 24 provided in the closure 20, and hardening the resin. The closure 20 is fixed to an inflator housing 12 by welding at a connecting portion 18. Since the number of components and the number of steps are smaller, favorable assembly workability is achieved.

Abstract: A physical quantity distribution sensor is disclosed. The sensor comprises: a plurality of sensor/storage sections each having a sensor element for sensing a received physical quantity and a storage element for storing the information of physical quantity sensed by the sensor element; a selector for selecting at least one of the sensor/storage sections; and a plurality of buffers each capable of detecting and supplying the information stored in at least one selected sensor/storage section. This sensor further comprises at least one selection signal transfer line for transferring an output of the selector. Power supply input portions of the buffers are connected to the selection signal transfer line, and the buffers are operated using, as a power voltage, an output of the selector entered into the buffers through the selection signal transfer line.

Abstract: In a disconnection detecting mode, first and second MOSFETs are turned off, a transistor is turned on, and charges of a capacitor are initialized. After that, third and fourth MOSFETs are alternately turned on/off by drive signals and having a complementary relation. When an antenna is connected normally, a pulse AC signal is transmitted to an output terminal via the antenna, and current flows from the output terminal into the capacitor via a resistor, a diode, and a resistor. When a voltage across terminals becomes equal to or higher than a determination reference voltage, a disconnection detection signal is changed to the H level (a connection state).

Abstract: In a transmitter device of a smart entry system for a vehicle, a transmitter antenna is provided between a variable power circuit and the ground, and is controlled by a switching circuit to transmit a searching radio wave. The transmission power of the antenna, that is, a range of reach of the searching radio wave is variably controlled by a drive output voltage applied to the antenna by a variable power circuit, which converts a battery voltage to the drive output voltage. Data to be transmitted in the searching radio wave is not used to modulate the drive output voltage but is used in an ON/OFF control of the switching circuit.

Abstract: In a semiconductor device 10 including a structure where transfer electrodes 2a to 2c are disposed on a semiconductor substrate 1 via an insulation layer 3, a first semiconductor region 4 of a first conductivity type, a second semiconductor region 5 of a conductivity type opposite to the first conductivity type, and a third semiconductor region 6 of the first conductivity type in a position that overlaps a region of the semiconductor substrate 1 directly underneath the transfer electrodes 2a to 2c. The second semiconductor region 5 is formed on the first semiconductor region 4. The third semiconductor region 6 is formed on the second semiconductor region 5 so that a position of a maximal point 8 of electric potential of the second semiconductor region 5 when being depleted is deeper than a position of the maximal point 8 in a case where the third semiconductor region 6 does not exist.

Abstract: The present invention relates to an igniter assembly including an igniter main body accommodated in an igniter collar, the igniter main body fixed within the igniter collar by a resin, the igniter collar having at least a cylindrical wall and an annular protruding portion protruding inward from a part of the cylindrical wall, the resin charged so as to extend from a position sandwiching the annular protruding portion from the upper and lower directions up to the same height as an upper end of the cylindrical wall, but not to cover an outer peripheral wall of the cylindrical wall.

Abstract: A first bias voltage to be applied to a drain portion of a MOS transistor and a pulse voltage pulsating with a predetermined potential difference are being generated by an apparatus incorporating the MOS transistor. Voltage generation means generates a second bias voltage to be applied to a gate portion of the MOS transistor, based on a value of the predetermined potential difference of the pulse voltage generated in the apparatus incorporating the MOS transistor, a value of the first bias voltage generated in the apparatus incorporating the MOS transistor, and a channel potential of a channel portion provided beneath the gate portion of the MOS transistor. Superposition means generate a voltage to be applied to the gate portion of the MOS transistor by superposing the pulse voltage onto the second bias voltage generated by the voltage generation means.

Abstract: In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45-47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.

Abstract: In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45–47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.

Abstract: The present invention provides an igniter assembly which is capable of preventing the infiltration of moisture, thus enabling long-term operational reliability. The periphery of a metallic cup 16 charged with an ignition charge 17 is covered by a resin sheet 18. A lower end portion of the resin sheet 18 and a resin molded body 21 are integrated at a contact portion therebetween to prevent the infiltration of moisture. The resin sheet 18 and resin molded body 21 integrated during the manufacturing process by cooling and hardening the resin molded body 21 and resin sheet 18 in a fused state.

Abstract: The present invention provides an inflator for an air bag which can be assembled easily. An igniter 30 is fixed inside a closure 20 using a resin 28 by charging molten resin through a resin charging hole 24 provided in the closure 20, and hardening the resin. The closure 20 is fixed to an inflator housing 12 by welding at a connecting portion 18. Since the number of components and the number of steps are smaller, favorable assembly workability is achieved.

Abstract: In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45-47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.

Abstract: A first bias voltage to be applied to a drain portion of a MOS transistor and a pulse voltage pulsating with a predetermined potential difference are being generated by an apparatus incorporating the MOS transistor. Voltage generation means generates a second bias voltage to be applied to a gate portion of the MOS transistor, based on a value of the predetermined potential difference of the pulse voltage generated in the apparatus incorporating the MOS transistor, a value of the first bias voltage generated in the apparatus incorporating the MOS transistor, and a channel potential of a channel portion provided beneath the gate portion of the MOS transistor. Superposition means generate a voltage to be applied to the gate portion of the MOS transistor by superposing the pulse voltage onto the second bias voltage generated by the voltage generation means.

Abstract: The output voltage of a pixel is held as a reference signal output voltage in a reference signal holding capacitor connected to a positive input terminal of a second subtractor by lowering the potential of a reset voltage to that of a calibration voltage and by activating a reset pulse and a reference-signal-calibrating pulse. Then, the reference signal output voltage is output from the second subtractor. And a corrected reference signal output voltage, obtained by subtracting the reference signal output voltage from a no signal output voltage, is held in a corrected reference signal holding capacitor. Moreover, a divider divides a corrected original signal output voltage, which is held in a corrected original signal holding capacitor, by the corrected reference signal output voltage, which is held in the corrected reference signal holding capacitor.