Abstract: Disclosed is a process for making a bipolar transistor which comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline Si layer formed on the insulation film. A p-type region formed in the convex portion serves as an intrinsic base region, the polycrystalline Si layer serves as an extrinic base region, an n-type region formed in the intrinsic base region serves as an emitter region, and the body serves as a collector region.

Abstract: A light metering device comprises a photometric element for independently metering a plurality of metering areas into which a whole image area is divided to provide weighted average brightness information for a scene to be photographed. The whole image area is divided into a plurality of metering areas including at least a center metering area defined at center of the whole image area, a lower metering area defined right below the center metering area, and two lower metering areas defined by a lower center half of the whole image area excluding the center metering area and the lower center metering area. The lower center metering area is weighted less than the center and lower metering areas by weighting differently the photometric sensitivities of the metering areas.

Abstract: A bipolar transistor comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline Si layer formed on the insulation film. A p-type region formed in the convex portion serves as an intrinsic base region, the polycrystalline Si layer serves as an extrinsic base region, an n-type region formed in the intrinsic base region serves as an emitter region, and the body serves as a collector region.

Abstract: A light metering device includes a light detecting number having a plurality of light detecting elements arranged in a matrix for detecting brightness of smaller divisions into which a whole image field is divided, respectively, to define a plurality of light metering areas different in area in an image field so as to contain a smaller light metering area within a larger light metering area, and a calculating member for obtaining a mean brightness value of each light metering area by calculating an arithmetic mean value of the outputs from the light detecting elements defining each light metering area. The difference of mean brightness values of two adjacent light metering areas is compared with a predetermined critical mean brightness value to determine that lighting condition under which a subject exists is ordinary or unusual.

Abstract: A plurality of buckets are fixedly provided on a different rotary body at predetermined angular intervals, and a disc-shaped recording medium is capable of being loaded into each bucket. A recording/playback position is situated at a predetermined angular position with respect to the rotary body, and drive units capable of freely approaching and separating from a bucket from upper and lower sides of the bucket are provided at the recording/playback position.

Abstract: A method of forming a thin film wherein a gas which contains an element used to constitute a desired thin film as at least a part of its constituent elements or a condensed solid layer of this gas is irradiated with a high output power laser beam to dissociate the gas or the solid layer of the gas and thereby locally produce a plasma, and a substrate is irradiated with reactive particles produced in the plasma, thereby obtaining a highly-pure high-quality thin film. Also disclosed is an apparatus for realizing this method.

Abstract: Circularly polarized light caused to be incident on a film surface is converted into three light beams by optical flats to obtain electrical signals corresponding to the intensities of the respective light beams. Two ellipsometric parameters .psi. and .DELTA. are claculated from these three electrical signals.

Abstract: A semiconductor device is constructed so that an insulation film is provided in regions other than a protruding portion of a substrate. A polycrystalline silicon layer and a metal silicide layer are formed over said insulation film to provide a multi-layer structure, and a take-out portion for at least one of the emitter, base, and collector members of a bipolar transistor provided in the mesa region is constituted by a film of this multi-layer structure. By virtue of the use of metal silicide together with the polycrystalline silicon, a very low resistance is achieved which enhances the device's operating speed. Further, the metal silicide is separated from the protruding portion of the substrate by a portion of the polycrystalline silicon to provide a smooth interface with the substrate. This smooth interface significantly reduces crystal defects in the single crystal substrate.

Abstract: A linearly polarized light beam is applied to the surface of a film and is reflected therefrom. The beam is then split into three light beams by three or four optical flats. These light beams are applied to photoelectric conversion devices after passing through analyzers with fixed analyzing angles. The photoelectric conversion devices convert the beams into electric signals representing the intensities of these light beams. Two ellipsometric parameters .psi. and .DELTA. are calculated from these three electric signals.

Abstract: Disclosed is a semiconductor device comprising a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer which is formed between the first semiconductor layer and the second semiconductor layer and a band gap of which is narrower than that of each of the first and second layers, so that band discontinuities in conduction bands and valence bands of the three layers form a barrier to the third semiconductor layer, and that a tunneling current can flow through the third semmiconductor layer owing to an internal electric field of the third semiconductor layer.

Abstract: A semiconductor device wherein the active regions of a transistor are formed in an opening provided in an insulating film, electrodes are led out by a polycrystalline silicon film formed on the insulating film, and the upper surfaces of the emitter and base electrodes and the exposed surface of the insulating film are substantially even.

Abstract: The invention deals with a semiconductor device which comprises a semiconductor substrate of a first conductivity type, a semiconductor region formed on said substrate, and a first insulation film provided between said semiconductor region and said semiconductor substrate, wherein said semiconductor substrate is isolated by said insulation film from a polycrystalline silicon layer formed in the periphery of said semiconductor region thereby to reduce the parasitic capacitance, and wherein said insulation film is stretched and arranged on the lower side of said semiconductor region.

Abstract: A semiconductor device in which two sorts of compound semiconductors having unequal lattice constants are joined, is disclosed.Defects such as dislocations attributed to lattice mismatching are avoided by subjecting one of the compound semiconductors to atomic layer doping with an impurity. Owing to this construction, it is permitted to combine the optimum materials as the compound semiconductors, and the semiconductor device has its performance improved and its design versatility expanded.

Abstract: A method and a structure for mounting to a head carriage a magnetic head applicable to a magnetic recorder or reproducer in an electronic camera system wherein an object is electronically photographed and recorded into a rotating magnetic disc and an image is reproduced by a television system or a printer. In the method and structure, a pin is inserted through a through-bore in a head mount plate and is then brought into abutment with the head carriage. Adhesives are applied to clearances between the pin and the through-bore of the head mount plate as well as between the pin and the abutment surface of the head carriage to fill them up. In the method and structure, since the head mount plate is adhesively attached to the head carriage via the pin, the resultant adhesive layers are reduced in thickness, thereby preventing the magnetic head from shifting out of position when the adhesives are hardened.

Abstract: When video signal recording on a single magnetic tape is to be interrupted and subsequently resumed, a pause button is operated and then released so as to roll back the tape, subsequently produce the playback mode for a time, and resume the recording mode when the tape is transported forward by the rolled-back length. The system uses three timers individually activated during the interruption of recording to control different circuits related to tape transportation so that resumption of recording is effected after an auto tracking (proper track tracing by the magnetic heads) is established.

Abstract: The TV system includes an audio tape recording apparatus, a videotape recording apparatus and a video camera device having a video camera and associated control circuits, so that the video camera device is controlled by signals reproduced by the audio tape recording apparatus or by the videotape recording apparatus and video signals from the well-controlled video camera device are recorded on a videotape by the videotape recording apparatus.

Abstract: An automatic tuner control system characterized in that the device comprises a detector for detecting a signal level in a radio receiver, a means for setting a reference signal level and a comparator means for doing comparison between the signal level and the reference signal level. Thus, the device is arranged to switch the received waves of the radio receiver in response to the result of the comparison in the comparator means and various conditions.

Abstract: The swirling burner comprises a vertical combustion chamber and an annular blast member located beneath the combustion chamber and provided with a central cylindrical space and a plurality of alternately superposed fuel gas passages and air passages. These passages are communicated with the cylindrical space through blow openings which are inclined in the same direction with respect to the radii of the cylindrical space. In a modification, the burner is further combined with straight blowing type burner for promoting the effect of the air-gas mixing.

Abstract: After desired impurities are diffused into a semiconductor substrate through a masking layer of SiO.sub.2 formed thereupon so as to form a semiconductor device, the masking layer is completely removed therefrom and thereafter more than two thin layers of different insulating materials are deposited upon the cleaned surface of the semiconductor device thus providing a method of forming a semiconductor device with an improved passivation film thereon. Said insulating materials are selected from the group consisting of silicon dioxide, a silicon nitride, alumina, boro-silicate glass, phospho-silicate glass, alumino-silicate glass, alumino-phospho-silicate glass and alumino-boro-silicate glass, and the thickness of each thin layer is in the range of 300 to 1500 angstroms and the first layer is silicon dioxide.