Abstract: A step of forming the first substrate which has a separation layer and a Ge layer on the separation layer, and a step of forming a bonded substrate stack by bonding the first substrate to the second substrate through an insulating layer, and a step of dividing the bonded substrate stack at the separation layer are performed, thereby obtaining a substrate with a GOI structure.

Abstract: A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

Abstract: An information-acquiring device for acquiring information on an objective substance to be detected, which is provided with a sensing element that has a surface capable of fixing the objective substance to be detected thereon, and makes applied light change its wavelength characteristics in response to the fixed state of the objective substance to be detected onto the surface, a light source, and light-receiving means for receiving light emitted from the light source through the sensing element, has the light-receiving means and the light source arranged on the same substrate so that the light which has been emitted from the light source and has been transmitted through the sensing element can be led to the light-receiving means, and has means for varying the wavelength regions of each light incident on each of a plurality of the light-receiving means installed in an optical path from the light source to the light-receiving means.

Abstract: A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks.

Abstract: A method for production of an optical element includes preparing a first member having formed on the surface of a first substrate 101 a first layer 103 by at least one of epitaxial growth and pore-making (micropore-making) and a second member having a porous layer for layer separation formed on a second substrate 104 and having formed thereon a second layer by at least one of epitaxial growth and pore-making (micropore-making), bonding the first layer 103 and the second layer, separating the second substrate 104 and the second layer of the second member from each other at the porous layer for layer separation in the second member, to form a laminated structure on the first substrate 101, forming a refraction index distribution pattern produced by a difference in refraction index in the plane of at least one of the first layer 103 and the second layer.

Abstract: To provide a novel technique for producing a difference in refractive index between two regions. An optical element according to the present invention includes a first porous region (2002), a second porous region (2004), and a non-porous region (2003) formed between the first porous region (2002) and the second porous region (2004), the non-porous region having a refractive index higher than a refractive index of the first porous region.

Abstract: A method for production of an optical element includes preparing a first member having formed on the surface of a first substrate 101 a first layer 103 by at least one of epitaxial growth and pore-making (micropore-making) and a second member having a porous layer for layer separation formed on a second substrate 104 and having formed thereon a second layer by at least one of epitaxial growth and pore-making (micropore-making), bonding the first layer 103 and the second layer, separating the second substrate 104 and the second layer of the second member from each other at the porous layer for layer separation in the second member, to form a laminated structure on the first substrate 101, forming a refraction index distribution pattern produced by a difference in refraction index in the plane of at least one of the first layer 103 and the second layer.

Abstract: An optical device comprising a substrate, a porous layer laid on the substrate having a pore diameter smaller than the wavelength of light and a crystal layer laid on the porous layer showing a refractive index greater than that of the porous layer is presented. The optical device is manufactured by a method comprising a step of forming a porous layer having a pore diameter smaller than the wavelength of light on the surface of a substrate and a step of forming a crystal layer showing a refractive index greater than that of the porous layer on the porous layer. Since the porous layer is clad, light can be confined with ease.

Abstract: A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.

Abstract: To provide a novel technique for producing a difference in refractive index between two regions. An optical element according to the present invention includes a first porous region (2002), a second porous region (2004), and a non-porous region (2003) formed between the first porous region (2002) and the second porous region (2004), the non-porous region having a refractive index higher than a refractive index of the first porous region.

Abstract: This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer (2) on a seed substrate (1), a semiconductor film forming step of forming a semiconductor film (3) on the separation layer (2), and a separation step of separating, by using the separation layer (2), the semiconductor film (3) from a composite member (Ia) formed in the semiconductor film forming step.

Abstract: A solid-state image sensing apparatus having a three-dimensional structure whose manufacturing process can be simplified is provided. A solid-state image sensing apparatus formed by bonding a first member and a second member is provided. The first member has a first surface on the side of the bonding interface between the first member and the second member and a second surface on the opposite side of the bonding interface. The second member has a third surface on the bonding interface side and a fourth surface on the opposite side of the bonding interface. The first member includes photoelectric conversion elements which are formed on the first surface before the first member is bonded to the second member. The second member includes circuit elements which are formed on the third surface before bonding.

Abstract: A semiconductor substrate including a gallium arsenide layer is obtained by executing a step of preparing a first substrate having a separating layer constituted of germanium and a gallium arsenide layer on the separating layer, a step of preparing a bonded substrate by bonding the first substrate and a second substrate, and a step of dividing the bonded substrate at a portion of the separating layer.

Abstract: An exposure apparatus which forms a pattern on an object includes an exposure head structure in which a plurality of elemental exposure units each including at least one light source and an optical element which forms an image of the light source on the object are arrayed, a sensor which detects the surface position of the object, and a controller which controls exposure by the exposure head structure based on the detection result by the sensor. The controller forms a pattern on the object while selectively operating one of the plurality of elemental exposure units, which satisfies a predetermined condition.

Abstract: A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.

Abstract: An optical device comprising a substrate, a porous layer laid on the substrate having a pore diameter smaller than the wavelength of light and a crystal layer laid on the porous layer showing a refractive index greater than that of the porous layer is presented. The optical device is manufactured by a method comprising a step of forming a porous layer having a pore diameter smaller than the wavelength of light on the surface of a substrate and a step of forming a crystal layer showing a refractive index greater than that of the porous layer on the porous layer. Since the porous layer is clad, light can be confined with ease.

Abstract: A piezoelectric structure includes a vibrational plate and a piezoelectric film. The vibrational plate includes a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials. Oxide layers sandwich the aforementioned layer. The piezoelectric film has a single orientation crystal or monocrystal structure.

Abstract: A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

Abstract: A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.

Abstract: A thin-film semiconductor device with a reduced influence on a device formation layer in separation and a method of manufacturing the device are provided. The manufacturing method includes the step of preparing a member having a semiconductor film with a semiconductor element and/or semiconductor integrated circuit on a separation layer, the separation step of separating the member at the separation layer by a pressure of a fluid, and the chip forming step of, after the separation step, forming the semiconductor film into chips.