Abstract: A film deposition apparatus includes a vacuum chamber and a turntable provided in the vacuum chamber. A concave portion is formed in a surface of the turntable to accommodate a substrate therein, and a pedestal portion is provided to support a location inside a periphery of the substrate in the concave portion. At least one communication passage is formed in a wall portion of the concave portion to cause a first space around the pedestal portion in the concave portion to be in communication with a second space outside the turntable provided in an end area of the concave portion located opposite to a first center of the turntable when seen from a second center of the concave portion. An exhaust opening is provided to evacuate the vacuum chamber.

Abstract: A plasma generation method is provided to generate and maintain plasma by supplying a predetermined power that is lower than a normal power to a plasma generator. Plasma of an ignition gas is generated by supplying the normal power to the plasma generator. A power input to the plasma generator is decreased by a first power that is smaller than a difference between the normal power and the predetermined power. The power input to the plasma generator is decreased by a second power that is smaller than the first power. Decreasing the power input to the plasma generator by the second power is performed after decreasing the power input to the plasma generator by the first power and is repeated a plurality of times.

Abstract: A particle removal method is provided for removing particles on a film etched using a fluorine-containing gas. In the method, a mixed gas of an activated oxygen-containing gas and hydrogen gas added to the activated oxygen-containing gas is supplied to the etched film.

Abstract: An electrical storage device includes a casing that has an opening, an electrode assembly that is placed inside the casing, a terminal plate that is electrically connected to the electrode assembly, and a holder that is provided to surround the terminal plate, the terminal plate having a step or a slope in an area in which the terminal plate comes in contact with the holder.

Abstract: A sensor substrate (13) includes an insertion opening (131) for inserting a light source substrate (32), and a plurality of pads (111) that are arranged along the insertion opening (131). The plurality of pads (111) and an external connection terminal are connected through a solder, and a tip of the pads (111) reaches an opening edge of the insertion opening (131).

Abstract: An image sensor unit includes: a plurality of light sources each including an LED chip; a plurality of light guides that are arranged in parallel to face incident surfaces on one side in a longitudinal direction for each of the plurality of light sources and that guide light from the plurality of light sources to a bill; an image sensor that converts light from the bill to an electric signal; a sensor substrate for mounting the image sensor; and a circuit board that is provided with the plurality of light sources on a same mounting surface and that is arranged on the sensor substrate on one side in the longitudinal direction of the plurality of light guides, wherein the sensor substrate includes a connection hole on one side in the longitudinal direction of the sensor substrate, and the circuit board is connected to the sensor substrate by connecting a connecting portion including a plurality of external connection pads to the connection hole.

Abstract: An electrical storage device includes a casing that has an opening, an electrode assembly that is placed inside the casing, a terminal plate that is electrically connected to the electrode assembly, and a holder that is provided to surround the terminal plate, the terminal plate having a step or a slope in an area in which the terminal plate comes in contact with the holder.

Abstract: Provided is a lithium ion capacitor that can maintain a high capacity retention rate and suppress an increase in internal resistance even after high-load charging-discharging is repeated many times and that has long service life because the occurrence of a short circuit due to precipitation of lithium on the negative electrode is prevented. The lithium ion capacitor comprises a positive electrode, a negative electrode, and an electrolyte solution, the negative electrode including a current collector and electrode layers that contain a negative electrode active material and are formed on front and back surfaces of the current collector, wherein, in the negative electrode, ratios of deviations of respective thicknesses of the electrode layers formed on the front and back surfaces of the current collector from an average of the thicknesses of the electrode layers to the average is ?10 to 10%.

Abstract: A method of manufacturing a silicon oxide film is provided. In the method, a substrate having a metal film on a surface thereof is loaded in a reaction chamber, and supply of a hydrogen gas into the reaction chamber is started by a hydrogen gas supply unit after the step of loading the substrate in the reaction chamber. Then, supply of an oxidation gas into the reaction chamber is started by an oxidation gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber, and supply of a silicon-containing gas into the reaction chamber is started by a silicon-containing gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber.

Abstract: An accumulator device which provides a high energy density and high output power is provided. The accumulator device (D) includes a positive electrode in which a positive electrode layer (A) is formed, a negative electrode in which a negative electrode layer (B) is formed, and an electrolytic solution (C). The accumulator device is characterized by satisfying that 1.02?WA/WB?2.08 and that 390 ?m?TA?750 ?m, where WA is the weight of the positive electrode layer (A), WB is the weight of the negative electrode layer (B), and TA is the thickness of the positive electrode in which the positive electrode layer (A) is formed.

Abstract: A film deposition apparatus includes a vacuum chamber and a turntable provided in the vacuum chamber. A concave portion is formed in a surface of the turntable to accommodate a substrate therein, and a pedestal portion is provided to support a location inside a periphery of the substrate in the concave portion. At least one communication passage is formed in a wall portion of the concave portion to cause a first space around the pedestal portion in the concave portion to be in communication with a second space outside the turntable provided in an end area of the concave portion located opposite to a first center of the turntable when seen from a second center of the concave portion. An exhaust opening is provided to evacuate the vacuum chamber.

Abstract: A method for producing an electrical storage device includes winding a positive electrode, a negative electrode, and a lithium ion source to form a wound element that has a flat part and a curved part, the lithium ion source including a plurality of parts that are arranged in a winding direction through a gap, the wound element being formed so that the gap is situated in the curved part.

Abstract: An immersion upper layer film composition includes a resin and a solvent. The resin forms a water-stable film during irradiation and is dissolved in a subsequent developer. The solvent contains a monovalent alcohol having 6 or less carbon atoms. The composition is to be applied to form a coat on a photoresist film in an immersion exposure process in which the photoresist film is irradiated through water provided between a lens and the photoresist film.

Abstract: A computer-readable recording medium stores a program causing a computer to execute an association process that includes identifying a second storage location associated with a first storage location by referring to a memory unit configured to store storage location association information indicating relevance between the first storage location and the second storage location where data prepared at a second operation stage associated with a first operation stage is stored. The second storage location is identified when new data is stored to the first storage location where data prepared at the first operation stage among multiple stages for manufacture of a product is stored. The association process further includes creating and recording in the memory unit, data association information indicating the relevance between the new data stored in the first storage location and the latest data among the data that is stored in the second storage location.

Abstract: A plurality of edges of sensor substrates are connected in a longitudinal direction in a sensor substrate unit. Farthest tips of sensor chips at the edges of the sensor substrates are positioned inside of farthest edges of the edges in the longitudinal direction. The edges of the connected sensor substrates overlap each other in a thickness direction of the sensor substrates in plan view.

Abstract: An image sensor unit includes: a plurality of light sources each including an LED chip; a plurality of light guides that are arranged in parallel to face incident surfaces on one side in a longitudinal direction for each of the plurality of light sources and that guide light from the plurality of light sources to a bill; an image sensor that converts light from the bill to an electric signal; a sensor substrate for mounting the image sensor; and a circuit board that is provided with the plurality of light sources on a same mounting surface and that is arranged on the sensor substrate on one side in the longitudinal direction of the plurality of light guides, wherein the sensor substrate includes a connection hole on one side in the longitudinal direction of the sensor substrate, and the circuit board is connected to the sensor substrate by connecting a connecting portion including a plurality of external connection pads to the connection hole.

Abstract: A method of manufacturing a silicon oxide film is provided. In the method, a substrate having a metal film on a surface thereof is loaded in a reaction chamber, and supply of a hydrogen gas into the reaction chamber is started by a hydrogen gas supply unit after the step of loading the substrate in the reaction chamber. Then, supply of an oxidation gas into the reaction chamber is started by an oxidation gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber, and supply of a silicon-containing gas into the reaction chamber is started by a silicon-containing gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber.

Abstract: A plurality of edges of sensor substrates are connected in a longitudinal direction in a sensor substrate unit. Farthest tips of sensor chips at the edges of the sensor substrates are positioned inside of farthest edges of the edges in the longitudinal direction. The edges of the connected sensor substrates overlap each other in a thickness direction of the sensor substrates in plan view.

Abstract: A resin composition which, in forming a fine pattern by a heat treatment of a resist pattern formed by using a photoresist, can be applied onto the resist pattern, can cause the resist pattern to smoothly shrink by heat treatment, and can be easily washed away by a treatment with an alkaline aqueous solution, and a method for efficiently forming a fine resist pattern using the resin composition are provided. The resin composition comprises a resin containing a hydroxyl group, a crosslinking component, and an alcohol solvent containing water in an amount of 10 wt % or less for the total solvent, wherein the alcohol in the alcohol solvent is a monovalent alcohol having 1 to 8 carbon atoms.

Abstract: An accumulator device which provides a high energy density and high output power is provided. The accumulator device (D) includes a positive electrode in which a positive electrode layer (A) is formed, a negative electrode in which a negative electrode layer (B) is formed, and an electrolytic solution (C). The accumulator device is characterized by satisfying that 1.02?WA/WB?2.08 and that 390 ?m?TA?750 ?m, where WA is the weight of the positive electrode layer (A), WB is the weight of the negative electrode layer (B), and TA is the thickness of the positive electrode in which the positive electrode layer (A) is formed.