Patents by Inventor Takashi Hase

Takashi Hase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12288606
    Abstract: The present invention is a rehabilitation system for performing rehabilitation of higher brain dysfunction, and includes: an image processing apparatus that executes an app for presenting a patient a problem for rehab based on an image using virtual reality, augmented reality, or mixed reality and stores the patient's problem solution record as rehab record information; a practitioner-side terminal that receives the rehab record information from the image processing apparatus; a server that saves the rehab record information transmitted from the practitioner-side terminal; and a doctor-side terminal that receives the rehab record information from the server and displays the state of rehabilitation performed for the patient on the basis of the rehab record information.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: April 29, 2025
    Assignee: TECHLICO INC.
    Inventors: Takashi Sugiyama, Reo Sakamoto, Kimitaka Hase, Shingo Hashimoto
  • Publication number: 20240421797
    Abstract: A quartz vibration element that includes: a quartz plate having first and second principal surfaces; first and second driving electrodes on the first and second principal surfaces, respectively, wherein when an X-axis, a Y-axis, and a Z-axis are defined as crystallographic axes of a quartz crystal of the quartz plate, an X?-axis and a Y?-axis are obtained by rotating the X-axis and the Y-axis about the Z-axis by a rotation angle ?, and a Y?-axis and a Z?-axis are obtained by rotating the Y?-axis and the Z-axis about the X?-axis by a rotation angle ?, the first and second principal surfaces are perpendicular to the Y?-axis, and when one of the first or second principal surfaces is viewed in plan and an angle ? is between the X-axis and a long side of the quartz plate, the quartz plate satisfies both ?=?×?×? and ?0.0165?0.016????0.0165+0.016 or +0.0165?0.016???+0.0165+0.016.
    Type: Application
    Filed: August 27, 2024
    Publication date: December 19, 2024
    Inventors: Taiki GOTO, Hiroshi KUMANO, Kaiza MAKINO, Takashi HASE, Mitsuhiro YAMADA
  • Publication number: 20240376380
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Application
    Filed: July 25, 2024
    Publication date: November 14, 2024
    Applicants: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATION
    Inventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
  • Publication number: 20240363750
    Abstract: In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.
    Type: Application
    Filed: July 12, 2024
    Publication date: October 31, 2024
    Inventors: Kazuya UEJIMA, Shiro KAMOHARA, Michio ONDA, Takashi HASE, Tatsuo NISHINO
  • Patent number: 12084609
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Grant
    Filed: November 30, 2023
    Date of Patent: September 10, 2024
    Assignees: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATION
    Inventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
  • Publication number: 20240101899
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 28, 2024
    Applicants: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATION
    Inventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
  • Patent number: 11873435
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Grant
    Filed: February 22, 2023
    Date of Patent: January 16, 2024
    Assignees: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATION
    Inventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
  • Publication number: 20230193126
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Application
    Filed: February 22, 2023
    Publication date: June 22, 2023
    Applicants: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATION
    Inventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
  • Patent number: 11613698
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: March 28, 2023
    Assignees: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATION
    Inventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
  • Publication number: 20220406936
    Abstract: In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.
    Type: Application
    Filed: August 29, 2022
    Publication date: December 22, 2022
    Inventors: Kazuya UEJIMA, Michio ONDA, Takashi HASE, Tatsuo NISHINO, Shiro KAMOHARA
  • Patent number: 11277115
    Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: March 15, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
  • Patent number: 11139796
    Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: October 5, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
  • Patent number: 11075615
    Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: July 27, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
  • Patent number: 11038485
    Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: June 15, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
  • Publication number: 20210062085
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Application
    Filed: November 13, 2020
    Publication date: March 4, 2021
    Applicant: CITIZEN ELECTRONICS CO., LTD.
    Inventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
  • Patent number: 10858582
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 1000 C to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Grant
    Filed: May 3, 2018
    Date of Patent: December 8, 2020
    Assignee: CITIZEN ELECTRONICS CO., LTD.
    Inventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
  • Publication number: 20200313000
    Abstract: In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.
    Type: Application
    Filed: November 14, 2017
    Publication date: October 1, 2020
    Inventors: Kazuya UEJIMA, Shiro KAMOHARA, Michio ONDA, Takashi HASE, Tatsuo NISHINO
  • Publication number: 20190187737
    Abstract: There is a need to ensure operations at a predetermined operating frequency when a temperature changes in an operating state. A semiconductor device includes: a bias-applied portion applied with a substrate bias; a temperature sensor to detect a temperature; and a substrate bias generator to apply the bias-applied portion with a substrate bias corresponding to the temperature detected by the temperature sensor. The bias-applied portion, while applied with a substrate bias by the substrate bias generator, shifts between an operating state and a stopped state. The substrate bias generator applies the bias-applied portion with a substrate bias configured so as not to cause an upper limit of an operating frequency for the bias-applied portion to be smaller than a predetermined value under condition of the temperature detected by the temperature sensor.
    Type: Application
    Filed: October 29, 2018
    Publication date: June 20, 2019
    Inventors: Masaharu MATSUDAIRA, Takashi HASE, Akira TANABE, Kazuya UEJIMA
  • Patent number: 10276775
    Abstract: A vibration device that includes a vibration portion, a support portion connected to the vibration portion, a bending-vibrating portion connected to the support portion, and a frame-shaped base portion connected to the bending-vibration portion and disposed so as to surround the vibration portion. The base portion defines a slit that extends in a first direction crossing a second direction in which the support portion extends from the vibration portion, the slit defining first and second fixed ends of the bending-vibrating portion and which are continuous with the base portion. A length between a portion of the bending-vibrating portion connected to the support portion to one of the first and second fixed ends of the bending-vibrating portion is in a range of ?/8 to 3?/8, where ? denotes a wavelength of a bending vibration corresponding to a frequency of a characteristic vibration of the vibration portion.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: April 30, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Takashi Hase, Toshio Nishimura, Hiroaki Kaida
  • Patent number: 10217800
    Abstract: A resistance change element includes first and second electrodes spaced apart from each other, a metal material layer adjacent to the first electrode, an oxide layer adjacent to each of the metal material layer and the first electrode, and a resistance change layer disposed continuously between the second and first electrodes and between the second electrode and the oxide layer. The resistance change layer is made of a metal oxide. The metal material layer is made of a metal or a metal compound. The oxide layer is made of an oxide of the material forming the metal material layer. The first electrode is made of ruthenium, ruthenium oxide, iridium, iridium oxide, platinum, gold, or copper. A free energy of oxide formation of the oxide forming the oxide layer is higher than a free energy of oxide formation of the oxide forming the resistance change layer.
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: February 26, 2019
    Assignee: Renesas Electronics Corporation
    Inventors: Makoto Ueki, Takashi Hase