Patents by Inventor Takashi Hase

Takashi Hase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240166024
    Abstract: This electric compressor control device comprises: a control unit of an inverter which controls a motor that drives a compressor; a physical quantity calculation unit which calculates, on the basis of one or a plurality of predetermined detection values acquired from the inverter, a physical quantity that varies depending on a workload of the compressor; a number-of-revolutions acquisition unit which acquires the number of revolutions of the motor; a storage unit which stores information representing a first threshold that varies depending on the number of revolutions of the motor, and defines whether or not the physical quantity is a normal value; and a refrigerant abnormality determination unit which determines whether or not there is an abnormality in a refrigerant system by comparing the calculated physical quantity with the first threshold, depending on the acquired number of revolutions.
    Type: Application
    Filed: May 12, 2022
    Publication date: May 23, 2024
    Applicant: MITSUBISHI HEAVY INDUSTRIES THERMAL SYSTEMS, LTD.
    Inventors: Kyohei WATANABE, Akinori YOSHIOKA, Makoto TAKEUCHI, Tomoki HASE, Takashi MITSUMATA, Shinya HAMAMOTO
  • Publication number: 20240101899
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 28, 2024
    Applicants: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATION
    Inventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
  • Publication number: 20240088850
    Abstract: A transmission circuit appropriately controls output power in response to fluctuations in the impedance of a load. A transmission circuit includes: a transistor to which a bias current IB1 is supplied and that amplifies and outputs an input signal RFin; a transistor to which a bias current IB2 is supplied, that has a collector connected to the collector of the transistor, and that amplifies and outputs the input signal; a current generation circuit that generates a current I2 on the basis of a current I1 from the emitter of the transistor; and a bias control circuit that outputs a first bias control signal for controlling the bias current IB1 and a second bias control signal for controlling the bias current IB2 on the basis of the current I2.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Inventors: Masatoshi HASE, Tsutomu OONARO, Takashi SOGA
  • Patent number: 11873435
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Grant
    Filed: February 22, 2023
    Date of Patent: January 16, 2024
    Assignees: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATION
    Inventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
  • Publication number: 20230193126
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Application
    Filed: February 22, 2023
    Publication date: June 22, 2023
    Applicants: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATION
    Inventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
  • Patent number: 11613698
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: March 28, 2023
    Assignees: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATION
    Inventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
  • Publication number: 20220406936
    Abstract: In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.
    Type: Application
    Filed: August 29, 2022
    Publication date: December 22, 2022
    Inventors: Kazuya UEJIMA, Michio ONDA, Takashi HASE, Tatsuo NISHINO, Shiro KAMOHARA
  • Patent number: 11277115
    Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: March 15, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
  • Patent number: 11139796
    Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: October 5, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
  • Patent number: 11075615
    Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: July 27, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
  • Patent number: 11038485
    Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: June 15, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
  • Publication number: 20210062085
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Application
    Filed: November 13, 2020
    Publication date: March 4, 2021
    Applicant: CITIZEN ELECTRONICS CO., LTD.
    Inventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
  • Patent number: 10858582
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 1000 C to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Grant
    Filed: May 3, 2018
    Date of Patent: December 8, 2020
    Assignee: CITIZEN ELECTRONICS CO., LTD.
    Inventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
  • Publication number: 20200313000
    Abstract: In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.
    Type: Application
    Filed: November 14, 2017
    Publication date: October 1, 2020
    Inventors: Kazuya UEJIMA, Shiro KAMOHARA, Michio ONDA, Takashi HASE, Tatsuo NISHINO
  • Publication number: 20190187737
    Abstract: There is a need to ensure operations at a predetermined operating frequency when a temperature changes in an operating state. A semiconductor device includes: a bias-applied portion applied with a substrate bias; a temperature sensor to detect a temperature; and a substrate bias generator to apply the bias-applied portion with a substrate bias corresponding to the temperature detected by the temperature sensor. The bias-applied portion, while applied with a substrate bias by the substrate bias generator, shifts between an operating state and a stopped state. The substrate bias generator applies the bias-applied portion with a substrate bias configured so as not to cause an upper limit of an operating frequency for the bias-applied portion to be smaller than a predetermined value under condition of the temperature detected by the temperature sensor.
    Type: Application
    Filed: October 29, 2018
    Publication date: June 20, 2019
    Inventors: Masaharu MATSUDAIRA, Takashi HASE, Akira TANABE, Kazuya UEJIMA
  • Patent number: 10276775
    Abstract: A vibration device that includes a vibration portion, a support portion connected to the vibration portion, a bending-vibrating portion connected to the support portion, and a frame-shaped base portion connected to the bending-vibration portion and disposed so as to surround the vibration portion. The base portion defines a slit that extends in a first direction crossing a second direction in which the support portion extends from the vibration portion, the slit defining first and second fixed ends of the bending-vibrating portion and which are continuous with the base portion. A length between a portion of the bending-vibrating portion connected to the support portion to one of the first and second fixed ends of the bending-vibrating portion is in a range of ?/8 to 3?/8, where ? denotes a wavelength of a bending vibration corresponding to a frequency of a characteristic vibration of the vibration portion.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: April 30, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Takashi Hase, Toshio Nishimura, Hiroaki Kaida
  • Patent number: 10217800
    Abstract: A resistance change element includes first and second electrodes spaced apart from each other, a metal material layer adjacent to the first electrode, an oxide layer adjacent to each of the metal material layer and the first electrode, and a resistance change layer disposed continuously between the second and first electrodes and between the second electrode and the oxide layer. The resistance change layer is made of a metal oxide. The metal material layer is made of a metal or a metal compound. The oxide layer is made of an oxide of the material forming the metal material layer. The first electrode is made of ruthenium, ruthenium oxide, iridium, iridium oxide, platinum, gold, or copper. A free energy of oxide formation of the oxide forming the oxide layer is higher than a free energy of oxide formation of the oxide forming the resistance change layer.
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: February 26, 2019
    Assignee: Renesas Electronics Corporation
    Inventors: Makoto Ueki, Takashi Hase
  • Patent number: 10115772
    Abstract: A semiconductor device has a resistance change element that is high in the holding resistance of a low resistance (On) state while securing a memory window. In a resistance random access memory including selection transistors and resistance change elements coupled in series to the selection transistors, the resistance change element uses a lower electrode that applies a positive voltage when being transited to a high resistance (Off) state, an upper electrode that faces the lower electrode, and a resistance change layer that is sandwiched between the lower electrode and the upper electrode and that uses an oxide of transition metal. The resistance change layer contains nitrogen. The concentration of nitrogen on the lower electrode side is higher than that on the upper electrode side. The nitrogen in the resistance change layer exhibits a concentration gradient continuously declined from the lower electrode side to the upper electrode side.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: October 30, 2018
    Assignee: Renesas Electronics Corporation
    Inventors: Makoto Ueki, Koji Masuzaki, Takashi Hase, Yoshihiro Hayashi
  • Publication number: 20180273842
    Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.
    Type: Application
    Filed: May 3, 2018
    Publication date: September 27, 2018
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
  • Publication number: 20180248536
    Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.
    Type: Application
    Filed: April 3, 2018
    Publication date: August 30, 2018
    Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura