Patents by Inventor Takashi Hase
Takashi Hase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12288606Abstract: The present invention is a rehabilitation system for performing rehabilitation of higher brain dysfunction, and includes: an image processing apparatus that executes an app for presenting a patient a problem for rehab based on an image using virtual reality, augmented reality, or mixed reality and stores the patient's problem solution record as rehab record information; a practitioner-side terminal that receives the rehab record information from the image processing apparatus; a server that saves the rehab record information transmitted from the practitioner-side terminal; and a doctor-side terminal that receives the rehab record information from the server and displays the state of rehabilitation performed for the patient on the basis of the rehab record information.Type: GrantFiled: January 22, 2019Date of Patent: April 29, 2025Assignee: TECHLICO INC.Inventors: Takashi Sugiyama, Reo Sakamoto, Kimitaka Hase, Shingo Hashimoto
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Publication number: 20240421797Abstract: A quartz vibration element that includes: a quartz plate having first and second principal surfaces; first and second driving electrodes on the first and second principal surfaces, respectively, wherein when an X-axis, a Y-axis, and a Z-axis are defined as crystallographic axes of a quartz crystal of the quartz plate, an X?-axis and a Y?-axis are obtained by rotating the X-axis and the Y-axis about the Z-axis by a rotation angle ?, and a Y?-axis and a Z?-axis are obtained by rotating the Y?-axis and the Z-axis about the X?-axis by a rotation angle ?, the first and second principal surfaces are perpendicular to the Y?-axis, and when one of the first or second principal surfaces is viewed in plan and an angle ? is between the X-axis and a long side of the quartz plate, the quartz plate satisfies both ?=?×?×? and ?0.0165?0.016????0.0165+0.016 or +0.0165?0.016???+0.0165+0.016.Type: ApplicationFiled: August 27, 2024Publication date: December 19, 2024Inventors: Taiki GOTO, Hiroshi KUMANO, Kaiza MAKINO, Takashi HASE, Mitsuhiro YAMADA
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Publication number: 20240376380Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: ApplicationFiled: July 25, 2024Publication date: November 14, 2024Applicants: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATIONInventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
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Publication number: 20240363750Abstract: In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.Type: ApplicationFiled: July 12, 2024Publication date: October 31, 2024Inventors: Kazuya UEJIMA, Shiro KAMOHARA, Michio ONDA, Takashi HASE, Tatsuo NISHINO
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Patent number: 12084609Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: GrantFiled: November 30, 2023Date of Patent: September 10, 2024Assignees: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATIONInventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
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Publication number: 20240101899Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: ApplicationFiled: November 30, 2023Publication date: March 28, 2024Applicants: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATIONInventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
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Patent number: 11873435Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: GrantFiled: February 22, 2023Date of Patent: January 16, 2024Assignees: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATIONInventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
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Publication number: 20230193126Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: ApplicationFiled: February 22, 2023Publication date: June 22, 2023Applicants: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATIONInventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
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Patent number: 11613698Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: GrantFiled: November 13, 2020Date of Patent: March 28, 2023Assignees: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATIONInventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
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Publication number: 20220406936Abstract: In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.Type: ApplicationFiled: August 29, 2022Publication date: December 22, 2022Inventors: Kazuya UEJIMA, Michio ONDA, Takashi HASE, Tatsuo NISHINO, Shiro KAMOHARA
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Patent number: 11277115Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.Type: GrantFiled: April 3, 2018Date of Patent: March 15, 2022Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
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Patent number: 11139796Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.Type: GrantFiled: April 3, 2018Date of Patent: October 5, 2021Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
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Patent number: 11075615Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.Type: GrantFiled: April 3, 2018Date of Patent: July 27, 2021Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
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Patent number: 11038485Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.Type: GrantFiled: April 3, 2018Date of Patent: June 15, 2021Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
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Publication number: 20210062085Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: ApplicationFiled: November 13, 2020Publication date: March 4, 2021Applicant: CITIZEN ELECTRONICS CO., LTD.Inventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
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Patent number: 10858582Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 1000 C to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: GrantFiled: May 3, 2018Date of Patent: December 8, 2020Assignee: CITIZEN ELECTRONICS CO., LTD.Inventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
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Publication number: 20200313000Abstract: In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.Type: ApplicationFiled: November 14, 2017Publication date: October 1, 2020Inventors: Kazuya UEJIMA, Shiro KAMOHARA, Michio ONDA, Takashi HASE, Tatsuo NISHINO
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Publication number: 20190187737Abstract: There is a need to ensure operations at a predetermined operating frequency when a temperature changes in an operating state. A semiconductor device includes: a bias-applied portion applied with a substrate bias; a temperature sensor to detect a temperature; and a substrate bias generator to apply the bias-applied portion with a substrate bias corresponding to the temperature detected by the temperature sensor. The bias-applied portion, while applied with a substrate bias by the substrate bias generator, shifts between an operating state and a stopped state. The substrate bias generator applies the bias-applied portion with a substrate bias configured so as not to cause an upper limit of an operating frequency for the bias-applied portion to be smaller than a predetermined value under condition of the temperature detected by the temperature sensor.Type: ApplicationFiled: October 29, 2018Publication date: June 20, 2019Inventors: Masaharu MATSUDAIRA, Takashi HASE, Akira TANABE, Kazuya UEJIMA
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Patent number: 10276775Abstract: A vibration device that includes a vibration portion, a support portion connected to the vibration portion, a bending-vibrating portion connected to the support portion, and a frame-shaped base portion connected to the bending-vibration portion and disposed so as to surround the vibration portion. The base portion defines a slit that extends in a first direction crossing a second direction in which the support portion extends from the vibration portion, the slit defining first and second fixed ends of the bending-vibrating portion and which are continuous with the base portion. A length between a portion of the bending-vibrating portion connected to the support portion to one of the first and second fixed ends of the bending-vibrating portion is in a range of ?/8 to 3?/8, where ? denotes a wavelength of a bending vibration corresponding to a frequency of a characteristic vibration of the vibration portion.Type: GrantFiled: December 22, 2015Date of Patent: April 30, 2019Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Takashi Hase, Toshio Nishimura, Hiroaki Kaida
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Patent number: 10217800Abstract: A resistance change element includes first and second electrodes spaced apart from each other, a metal material layer adjacent to the first electrode, an oxide layer adjacent to each of the metal material layer and the first electrode, and a resistance change layer disposed continuously between the second and first electrodes and between the second electrode and the oxide layer. The resistance change layer is made of a metal oxide. The metal material layer is made of a metal or a metal compound. The oxide layer is made of an oxide of the material forming the metal material layer. The first electrode is made of ruthenium, ruthenium oxide, iridium, iridium oxide, platinum, gold, or copper. A free energy of oxide formation of the oxide forming the oxide layer is higher than a free energy of oxide formation of the oxide forming the resistance change layer.Type: GrantFiled: September 6, 2017Date of Patent: February 26, 2019Assignee: Renesas Electronics CorporationInventors: Makoto Ueki, Takashi Hase