Patents by Inventor Takashi Hase
Takashi Hase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240101899Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: ApplicationFiled: November 30, 2023Publication date: March 28, 2024Applicants: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATIONInventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
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Patent number: 11873435Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: GrantFiled: February 22, 2023Date of Patent: January 16, 2024Assignees: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATIONInventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
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Publication number: 20230193126Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: ApplicationFiled: February 22, 2023Publication date: June 22, 2023Applicants: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATIONInventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
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Patent number: 11613698Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: GrantFiled: November 13, 2020Date of Patent: March 28, 2023Assignees: CITIZEN ELECTRONICS CO., LTD., NICHIA CORPORATIONInventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
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Publication number: 20220406936Abstract: In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.Type: ApplicationFiled: August 29, 2022Publication date: December 22, 2022Inventors: Kazuya UEJIMA, Michio ONDA, Takashi HASE, Tatsuo NISHINO, Shiro KAMOHARA
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Patent number: 11277115Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.Type: GrantFiled: April 3, 2018Date of Patent: March 15, 2022Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
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Patent number: 11139796Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.Type: GrantFiled: April 3, 2018Date of Patent: October 5, 2021Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
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Patent number: 11075615Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.Type: GrantFiled: April 3, 2018Date of Patent: July 27, 2021Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
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Patent number: 11038485Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.Type: GrantFiled: April 3, 2018Date of Patent: June 15, 2021Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
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Publication number: 20210062085Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: ApplicationFiled: November 13, 2020Publication date: March 4, 2021Applicant: CITIZEN ELECTRONICS CO., LTD.Inventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
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Patent number: 10858582Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 1000 C to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: GrantFiled: May 3, 2018Date of Patent: December 8, 2020Assignee: CITIZEN ELECTRONICS CO., LTD.Inventors: Byungchul Hong, Naoki Sako, Naoto Kijima, Masahiko Yoshino, Takashi Hase, Fumiko Yoyasu, Kentarou Horibe
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Publication number: 20200313000Abstract: In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.Type: ApplicationFiled: November 14, 2017Publication date: October 1, 2020Inventors: Kazuya UEJIMA, Shiro KAMOHARA, Michio ONDA, Takashi HASE, Tatsuo NISHINO
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Publication number: 20190187737Abstract: There is a need to ensure operations at a predetermined operating frequency when a temperature changes in an operating state. A semiconductor device includes: a bias-applied portion applied with a substrate bias; a temperature sensor to detect a temperature; and a substrate bias generator to apply the bias-applied portion with a substrate bias corresponding to the temperature detected by the temperature sensor. The bias-applied portion, while applied with a substrate bias by the substrate bias generator, shifts between an operating state and a stopped state. The substrate bias generator applies the bias-applied portion with a substrate bias configured so as not to cause an upper limit of an operating frequency for the bias-applied portion to be smaller than a predetermined value under condition of the temperature detected by the temperature sensor.Type: ApplicationFiled: October 29, 2018Publication date: June 20, 2019Inventors: Masaharu MATSUDAIRA, Takashi HASE, Akira TANABE, Kazuya UEJIMA
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Patent number: 10276775Abstract: A vibration device that includes a vibration portion, a support portion connected to the vibration portion, a bending-vibrating portion connected to the support portion, and a frame-shaped base portion connected to the bending-vibration portion and disposed so as to surround the vibration portion. The base portion defines a slit that extends in a first direction crossing a second direction in which the support portion extends from the vibration portion, the slit defining first and second fixed ends of the bending-vibrating portion and which are continuous with the base portion. A length between a portion of the bending-vibrating portion connected to the support portion to one of the first and second fixed ends of the bending-vibrating portion is in a range of ?/8 to 3?/8, where ? denotes a wavelength of a bending vibration corresponding to a frequency of a characteristic vibration of the vibration portion.Type: GrantFiled: December 22, 2015Date of Patent: April 30, 2019Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Takashi Hase, Toshio Nishimura, Hiroaki Kaida
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Patent number: 10217800Abstract: A resistance change element includes first and second electrodes spaced apart from each other, a metal material layer adjacent to the first electrode, an oxide layer adjacent to each of the metal material layer and the first electrode, and a resistance change layer disposed continuously between the second and first electrodes and between the second electrode and the oxide layer. The resistance change layer is made of a metal oxide. The metal material layer is made of a metal or a metal compound. The oxide layer is made of an oxide of the material forming the metal material layer. The first electrode is made of ruthenium, ruthenium oxide, iridium, iridium oxide, platinum, gold, or copper. A free energy of oxide formation of the oxide forming the oxide layer is higher than a free energy of oxide formation of the oxide forming the resistance change layer.Type: GrantFiled: September 6, 2017Date of Patent: February 26, 2019Assignee: Renesas Electronics CorporationInventors: Makoto Ueki, Takashi Hase
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Patent number: 10115772Abstract: A semiconductor device has a resistance change element that is high in the holding resistance of a low resistance (On) state while securing a memory window. In a resistance random access memory including selection transistors and resistance change elements coupled in series to the selection transistors, the resistance change element uses a lower electrode that applies a positive voltage when being transited to a high resistance (Off) state, an upper electrode that faces the lower electrode, and a resistance change layer that is sandwiched between the lower electrode and the upper electrode and that uses an oxide of transition metal. The resistance change layer contains nitrogen. The concentration of nitrogen on the lower electrode side is higher than that on the upper electrode side. The nitrogen in the resistance change layer exhibits a concentration gradient continuously declined from the lower electrode side to the upper electrode side.Type: GrantFiled: October 26, 2016Date of Patent: October 30, 2018Assignee: Renesas Electronics CorporationInventors: Makoto Ueki, Koji Masuzaki, Takashi Hase, Yoshihiro Hayashi
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Publication number: 20180273842Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.Type: ApplicationFiled: May 3, 2018Publication date: September 27, 2018Applicant: MITSUBISHI CHEMICAL CORPORATIONInventors: Byungchul HONG, Naoki SAKO, Naoto KIJIMA, Masahiko YOSHINO, Takashi HASE, Fumiko YOYASU, Kentarou HORIBE
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Publication number: 20180248536Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.Type: ApplicationFiled: April 3, 2018Publication date: August 30, 2018Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
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Publication number: 20180241372Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.Type: ApplicationFiled: April 3, 2018Publication date: August 23, 2018Inventors: TORU KIDU, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura
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Publication number: 20180226944Abstract: A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.Type: ApplicationFiled: April 3, 2018Publication date: August 9, 2018Inventors: Toru Kidu, Takashi Hase, Takeshi Kamada, Hiroaki Kaida, Shigeaki Sugimura