Abstract: An object of the present invention is to allow a flap of a roll storage case to be easily opened and closed by means of a flap cover and to prevent the flap cover from slipping off from the flap of the roll storage case even when the flap is opened and closed many times. A flap cover includes an upper plate covering an upper surface portion of a flap, a front plate covering a front surface portion of the flap, and a pair of side plates covering opposite side surface portions of the flap. Each of the side plates includes a locking portion which projects inward from the side plate and which is able to be locked on a lower end surface of the side surface portion of the flap.

Abstract: There is provided an optical pickup including a light source, an objective lens configured to focus light from the light source onto one signal face of an optical disc, the optical disc including two or more signal faces, each of the signal faces having a groove formed therein, a photodetector configured to receive returning rays from the optical disc, the photodetector having a light receiving face divided into four light receiving regions by a dividing line that is substantially parallel to a track direction of the optical disc and by a dividing line that is substantially perpendicular to the track direction, and a shading unit disposed at an incident side of the photodetector and configured to block, of returning rays from a signal face other than the one signal face of the optical disc, at least a diffracted ray that is diffracted by the groove.

Abstract: A diffusion furnace includes a boat which supports a semiconductor wafer thereon and is rotatable together with the semiconductor wafer. A heater is arranged on the periphery of a core tube which houses the boat therein. The core tube includes a reaction gas supply pipe through which a reaction gas containing a dopant is supplied; and a cooling gas supply pipe through which a cooling gas is supplied toward an outer peripheral portion of the semiconductor wafer.

Abstract: In one embodiment, a method of cleaning a semiconductor manufacturing apparatus includes supplying a cleaning gas for removing a deposition film deposited on an inside wall of a treatment chamber through a supply pipe of the treatment chamber so that a supply amount of the cleaning gas from the supply pipe per unit time is greater than an exhaust amount of the cleaning gas from an exhaust pipe of the treatment chamber per unit time. The method further includes supplying an inert gas to fill the supply pipe with the inert gas.

Abstract: There is provided an optical pickup including a light source, an objective lens configured to focus light from the light source onto one signal face of an optical disc, the optical disc including two or more signal faces, each of the signal faces having a groove formed therein, a photodetector configured to receive returning rays from the optical disc, the photodetector having a light receiving face divided into four light receiving regions by a dividing line that is substantially parallel to a track direction of the optical disc and by a dividing line that is substantially perpendicular to the track direction, and a shading unit disposed at an incident side of the photodetector and configured to block, of returning rays from a signal face other than the one signal face of the optical disc, at least a diffracted ray that is diffracted by the groove.

Abstract: An optical recording medium includes a first transparent film layer, a second transparent film layer, and a recording material layer sandwiched between the first transparent film layer and the second transparent film layer. The recording material layer includes a hologram recording material.

Abstract: An analyzer controlling apparatus enabling a user to correctly and easily select a method file in which analysis conditions for operating an analyzer are described. An analyzer controlling apparatus reads out a method file stored in a memory and sets an analysis condition for an analyzer. The analyzer controlling apparatus includes: image creating unit for creating an image according to a predetermined rule based on content of an analysis condition described in a method file and/or a file name of the method file and for storing the image into the memory in association with the method file; an image showing unit for reading an image out of the memory and showing the image onto a display screen; and an analysis condition setting unit for reading, out of the memory, a method file associated with an image selected by a user and for setting an analysis condition for the analyzer.

Abstract: A restoration apparatus restores backup data without running an operating system (OS) until a time point until which the total amount of the data read out along with the start-up of the OS and a business system remains equal to or smaller than the total amount of the data that is restorable while running the OS and the business system, and subsequently restores the backup data in parallel with the start-up of the OS and the business system.

Abstract: An LPCVD apparatus is provided with a processing chamber and a reaction cooling apparatus. The reaction cooling apparatus is placed outside the processing chamber and is configured to generate hydrogen fluoride gas by reaction of hydrogen gas and fluorine gas and to cool the hydrogen fluoride gas. The hydrogen fluoride gas cooled by the reaction cooling apparatus is supplied into the processing chamber as a cleaning gas.

Abstract: A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

Abstract: A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.

Abstract: In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing boron is deposited on an inner wall of the reaction chamber, a silicon nitride film not containing boron is formed as the structure film on the substrate in the reaction chamber, and the inner wall of the reaction chamber is dry etched to be cleaned. At this time, the dry etching is terminated after boron is detected in a gas exhausted from the reaction chamber.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked structural body, a semiconductor pillar, and a memory unit. The stacked structural body is provided on a major surface of the substrate. The stacked structural body includes electrode films alternately stacked with inter-electrode insulating films in a direction perpendicular to the major surface. The pillar pierces the body in the direction. The memory unit is provided at an intersection between the pillar and the electrode films. The electrode films include at least one of amorphous silicon and polysilicon. The stacked structural body includes first and second regions. A distance from the second region to the substrate is greater than a distance from the first region to the substrate. A concentration of an additive included in the electrode film in the first region is different from that included in the electrode film in the second region.

Abstract: A recording apparatus includes the following elements. A recording light source emits pulse laser light for recording. A first light source emits first CW laser light. An irradiation optical system irradiates an optical recording medium with the pulse laser light and the first CW laser light via an objective lens in the state in which the optical axis of the first CW laser light is tilted with respect to the optical axis of the pulse laser light. A reception optical system outputs, to a first light receiver, a returned light portion of the first CW laser light which has been reflected by a reflection surface formed on the optical recording medium and which has been input through the objective lens. A focus servo controller performs focus servo control for the objective lens on the basis of a first reception signal obtained by the first light receiver.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked structural body, a semiconductor pillar, and a memory unit. The stacked structural body is provided on a major surface of the substrate. The stacked structural body includes electrode films alternately stacked with inter-electrode insulating films in a direction perpendicular to the major surface. The pillar pierces the body in the direction. The memory unit is provided at an intersection between the pillar and the electrode films. The electrode films include at least one of amorphous silicon and polysilicon. The stacked structural body includes first and second regions. A distance from the second region to the substrate is greater than a distance from the first region to the substrate. A concentration of an additive included in the electrode film in the first region is different from that included in the electrode film in the second region.

Abstract: A method for manufacturing a gasket-oriented steel plate excellent in elasticity and formability, to allow for reduction of a breaking elongation of the steel plate to improve a formability (punchability) and improve a proof stress of the steel plate against a repeated stress from a discharge valve to maintain a higher elasticity of the steel plate and a gasket able to withstand the repeated stress from the discharge valve.

Abstract: Isolation trenches are formed in the main surface of a semiconductor substrate, and isolation regions. are embedded in these trenches. First insulating films, charge storage layers, a second insulating film, and a control gate are formed on the main surface of the semiconductor substrate sectioned by the isolation regions. Shielding layers are arranged in the isolation regions in such a manner that their bottom portions are lower than the channel regions and their upper portions are higher than at least the main surface of the semiconductor substrate to provide an electric and magnetic shield between their storage layers and channel regions of adjacent memory cells.

Abstract: A recording apparatus includes the following elements. A recording light source emits pulse laser light for recording. A first light source emits first CW laser light. An irradiation optical system irradiates an optical recording medium with the pulse laser light and the first CW laser light via an objective lens in the state in which the optical axis of the first CW laser light is tilted with respect to the optical axis of the pulse laser light. A reception optical system outputs, to a first light receiver, a returned light portion of the first CW laser light which has been reflected by a reflection surface formed on the optical recording medium and which has been input through the objective lens. A focus servo controller performs focus servo control for the objective lens on the basis of a first reception signal obtained by the first light receiver.

Abstract: An optical pickup includes: a light source outputting a light beam; an objective lens collecting the light beam on a target recording layer as a target of plural recording layers provided in an optical disc; a lens moving unit moving the objective lens in a tracking direction nearly orthogonal to track grooves helically or coaxially formed in the target recording layer; a collective lens collecting a reflected light beam formed when the light beam is reflected by the optical disc; a diffraction optical element diffracting part of the reflected first-order light beam in predetermined directions as first, second, third and fourth beams; and a photodetector receiving the first and second beams using first and second light receiving areas, and generating light reception signals, and receiving the third and fourth beams using third and fourth light receiving areas, and generates light reception signals.

Abstract: According to one embodiment, a cleaning gas is sealed in a chamber of a semiconductor manufacturing apparatus, and the cleaning gas and deposits adhered in the chamber are reacted with each other to generate a reactive gas. After a predetermined time, the gas is exhausted from the chamber. Then, the chamber is evacuated while the cleaning gas is introduced into the chamber, and the reactive gas concentration contained in an exhausted gas is measured. The reactive gas concentration is compared with a determination value obtained when the deposits are removed from the chamber to determine whether the cleaning is terminated.