Abstract: A heating device includes a heating roller having a resistance heat-generating layer that generates heat by passage of a current through the resistance heat-generating layer, a pressure rotating body that rotates in such a manner as to press a sheet-shaped heating target that is an object to be subjected to a heating treatment against an outer peripheral surface of the heating roller and in such a manner as to cause the heating target to pass through the outer peripheral surface of the heating roller, and an auxiliary heating unit that supplementarily heats at least an axial end region included in a heat-generating region in which heat is generated by the resistance heat-generating layer of the heating roller.

Abstract: A substrate processing apparatus according to an embodiment includes a support table, a power source, and a ceiling plate. The support table is provided inside a chamber to support a substrate to be processed. The power source supplies high frequency power toward the support table. The ceiling plate is provided inside the chamber to face the support table. The ceiling plate includes a first member whose inside is provided with an opening and a second member being fitted into the opening. A first crystal plane of a first material exposed on a first surface of the first member facing the support table is different from a second crystal plane of the first material exposed on a second surface of the second member facing the support table.

Abstract: A memory device includes source-drain structure bodies and gate structure bodies arranged along a first direction, and global word lines. The source-drain structure body includes a bit line, and first to third semiconductor layers. The first and second semiconductor layers are of first conductivity type and the first semiconductor layer is connected to the bit line. The third semiconductor layer of a second conductivity type contacts the first and second semiconductor layers. The gate structure body includes a local word line and a charge storage film. A first source-drain structure body includes a bit line forming a first reference bit line. A first global word line connects to the local word lines in the gate structure bodies formed on both sides of the first reference bit line and to the local word lines formed in alternate gate structure bodies that are formed between the remaining plurality of source-drain structure bodies.

Abstract: A heat generating roller includes a base member made of metal, a heat generating portion made of a material that generates heat when energized, and an insulating portion provided between the base member and the heat generating portion and that electrically insulates the base member and the heat generating portion from each other, the insulating portion being made of poly-ether-ether-ketone resin.

Abstract: A liquid applying device includes a circulation member, an impregnation member, and a support member. The circulation member is configured to circulate in a predetermined direction. The impregnation member is formed in a plate shape. The impregnation member is impregnated with a liquid. The impregnation member is in contact with the circulation member at an end portion thereof in a direction intersecting with a circulating direction of the circulation member so as to apply the liquid to the circulation member. The support member supports a portion including an end portion side of the impregnation member, at an opposite side of the circulation member in a state where the end portion of the impregnation member is in contact with the circulation member.

Abstract: According to one embodiment, a semiconductor manufacturing device according to an embodiment of the present invention includes a chamber; and a stage, wherein the stage comprises: a holding member arranged in the chamber, the holding member having a plurality of convex parts on a surface for mounting a substrate; and a plurality of pins moving up and down in a vertical direction with respect to the holding member, the plurality of lift pins rotating around a rotating shaft parallel to the vertical direction, wherein the plurality of lift pins rotates the substrate around the rotating shaft.

Abstract: A liquid applying device includes a circulation member, an impregnation member, and a support member. The circulation member is configured to circulate in a predetermined direction. The impregnation member is formed in a plate shape. The impregnation member is impregnated with a liquid. The impregnation member is in contact with the circulation member at an end portion thereof in a direction intersecting with a circulating direction of the circulation member so as to apply the liquid to the circulation member. The support member supports a portion including an end portion side of the impregnation member, at an opposite side of the circulation member in a state where the end portion of the impregnation member is in contact with the circulation member.

Abstract: A semiconductor device according to one embodiment includes a semiconductor substrate, a stack body including metal films and first insulating films alternately stacked on the semiconductor substrate and including a stepped end portion, conducting films respectively protruding from the metal films on all steps of the end portion, contact portions respectively provided above the conducting films, a second insulating film surrounding side surfaces of the contact portions, and a barrier metal film provided between the second insulating film and the contact portions and between the conducting films and the contact portions. The entire top surfaces of the conducting films are covered by the barrier metal film and the second insulating film.

Abstract: ‘Tochigi iW1 Go’ is a new variety of strawberry bred by crossbreeding variety ‘Wadahatsukoi’ and ‘09-52-1’ in 2012. The plant may be used, e.g., for cultivation of fruit for consumption. ‘Tochigi iW1 Go’ is a high-quality, high-yielding variety that produces a fruit having a white pericarp, a large fruit size, a high-yielding characteristic, and adaptability to forcing culture.

Abstract: A plasma processing device includes a chamber; a substrate stage that supports a substrate inside the chamber; a plasma generator that generates plasma by which the substrate is processed in a space above the substrate inside the chamber; and an electromagnet. The electromagnet is provided in each of a plurality of regions, which are provided on a top of the chamber in an upper part thereof, so as to be independently movable. The plasma processing device further includes a controller configured to move the electromagnet to produce a uniform plasma density onto the substrate.

Abstract: According to one embodiment, a plasma processing apparatus includes a chamber, a substrate stage configured to support a substrate inside the chamber, and a plasma generation structure configured to generate plasma processing the substrate, in a space above the substrate inside the chamber. Further, the plasma processing apparatus includes an electromagnet including coils configured to apply a magnetic field to the space, and an electromagnet controller configured to cause pulsed electric currents, in each of which its direction and ON/OFF are pulsed, to flow through the coils.

Abstract: A belt-type transport device includes a belt, a pressure unit, a nip forming unit, a belt stretching roller, an inclination controller, a contact unit, and a support unit. The belt is an endless belt, has an outer circumferential surface and an inner circumferential surface, and is to be rotated. The pressure unit is in contact with the outer circumferential surface of the belt. The nip forming unit presses the belt against the pressure unit so as to form a nip through which a recording medium is to be transported. The belt stretching roller is disposed inside the belt and stretches the belt. The inclination controller controls inclination of the belt stretching roller. The contact unit is provided along a width direction of the belt and is in contact with the inner circumferential surface of the belt. The support unit supports the contact unit such that the contact unit is able to follow inclination of the belt which is changed due to the inclination of the belt stretching roller.

Abstract: A belt-type transport device includes a belt, a pressure unit, a nip forming unit, a belt stretching roller, an inclination controller, a contact unit, and a support unit. The belt is an endless belt, has an outer circumferential surface and an inner circumferential surface, and is to be rotated. The pressure unit is in contact with the outer circumferential surface of the belt. The nip forming unit presses the belt against the pressure unit so as to form a nip through which a recording medium is to be transported. The belt stretching roller is disposed inside the belt and stretches the belt. The inclination controller controls inclination of the belt stretching roller. The contact unit is provided along a width direction of the belt and is in contact with the inner circumferential surface of the belt. The support unit supports the contact unit such that the contact unit is able to follow inclination of the belt which is changed due to the inclination of the belt stretching roller.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a treatment chamber configured to treat a substrate with plasma, a first annular coil configured to generate a first magnetic field to be applied to the plasma, and a second annular coil configured to generate a second magnetic field to be applied to the plasma. The apparatus further includes a first electric current supplying module configured to supply, to the first annular coil, a first electric current flowing in a first direction, and cause the first annular coil to generate the first magnetic field. The apparatus further includes a second electric current supplying module configured to supply, to the second annular coil, a second electric current flowing in a second direction that is different from the first direction, and cause the second annular coil to generate the second magnetic field.

Abstract: A transport device includes a first belt member, a second belt member, a first roller, a second roller, a third roller, a fourth roller, a fifth roller, and a sixth roller. The second belt member is in contact with the first belt member to form a contact portion in cooperation with the first belt member. The first roller is capable of adjusting a tilt in a longitudinal direction of the first roller. The second roller is capable of adjusting a tilt in a longitudinal direction of the second roller. The third and fourth rollers are located adjacent to the first roller. The fifth and sixth rollers are located adjacent to the second roller. The third roller, the fourth roller, the fifth roller, and the sixth roller each have a uniform diameter in a longitudinal direction of the roller, and are disposed at positions other than the contact portion.

Abstract: A semiconductor device according to one embodiment includes a semiconductor substrate, a stack body including metal films and first insulating films alternately stacked on the semiconductor substrate and including a stepped end portion, conducting films respectively protruding from the metal films on all steps of the end portion, contact portions respectively provided above the conducting films, a second insulating film surrounding side surfaces of the contact portions, and a barrier metal film provided between the second insulating film and the contact portions and between the conducting films and the contact portions. The entire top surfaces of the conducting films are covered by the barrier metal film and the second insulating film.

Abstract: A plasma processing device includes a chamber; a substrate stage that supports a substrate inside the chamber; a plasma generator that generates plasma by which the substrate is processed in a space above the substrate inside the chamber; and an electromagnet. The electromagnet is provided in each of a plurality of regions, which are provided on a top of the chamber in an upper part thereof, so as to be independently movable. The plasma processing device further includes a controller configured to move the electromagnet to produce a uniform plasma density onto the substrate.

Abstract: ‘Tochigi i37 Go’ is a new variety of strawberry bred by crossbreeding variety ‘Tochigi 32 Go’ and ‘09-48-5’ in 2012. The plant may be used, e.g., for cultivation of fruit for consumption. ‘Tochigi i37 Go’ is a high-quality, high-yielding variety having early maturing and high-yielding characteristic, fruit with a taste similar to those of ‘Tochiotome’, a large fruit size, a firm fruit firmness, and adaptability to forcing culture.

Abstract: ‘Tochigi iW1 Go’ is a new variety of strawberry bred by crossbreeding variety ‘Wadahatsukoi’ and ‘09-52-1’ in 2012. The plant may be used, e.g., for cultivation of fruit for consumption. ‘Tochigi iW1 Go’ is a high-quality, high-yielding variety that produces a fruit having a white pericarp, a large fruit size, a high-yielding characteristic, and adaptability to forcing culture.