Abstract: A semiconductor device disclosed herein is provided with: a source electrode; a gate electrode; a drain electrode; a first region of a first conductivity type formed in a range exposed at an upper surface of the semiconductor substrate a second region of a second conductivity type; a third region of the first conductivity type; and a fourth region of the first conductivity type. The fourth region includes: a first drift region formed in a range exposed at the upper surface; a second drift region having a first conductivity type impurity concentration higher than that of the first drift region, and adjacent to the first drift region; and a low concentration drift region having a first conductivity type impurity concentration lower than that of the first drift region. The first drift region is projected to a second region side than the second drift region.

Abstract: A lateral semiconductor device including a semiconductor substrate; a buried oxide layer formed on the semiconductor substrate, and an active layer formed on the buried oxide layer. The active layer includes a first conductivity type well region, a second conductivity type well region, and a first conductivity type drift region interposed between the first conductivity type well region and the second conductivity type well region. A region where current flows because of carriers moving between the first conductivity type well region and the second conductivity type well region, and a region where no current flows are formed alternately between the first conductivity type well region and the second conductivity type well region, in a direction perpendicular to a carrier moving direction when viewed in a plan view.

Abstract: A semiconductor device includes a semiconductor layer; a first type of a first semiconductor element that is arranged in a first element region of the semiconductor layer, has first and second main electrodes, and switches current; and a second type of a second semiconductor element that is arranged in a second element region of the semiconductor layer, has third and fourth main electrodes, and freewheels the current. The first and second element regions are adjacent in a direction orthogonal to a direction in which current flows, and are formed in a loop shape over the entire element region when the semiconductor layer is viewed from above. The first main electrode is electrically connected to the third main electrode, and the second main electrode is electrically connected to the fourth main electrode.

Abstract: A manufacturing method for manufacturing a lateral semiconductor device having an SOI (Silicon on Insulator) substrate, the lateral semiconductor device comprising a semiconductor layer that includes a buried oxide layer and a drift region, the manufacturing method comprising an etching process of etching, by a predetermined depth, a LOCOS oxide that projects from a surface of the semiconductor layer by a predetermined thickness and is embedded in the semiconductor layer by a predetermined thickness, and a trench forming process of simultaneously forming a first trench extending from the drift region toward the buried oxide layer, and a second trench extending from a portion obtained by the etching in the etching process toward the buried oxide layer, at a same etching rate, and stopping forming the first trench and the second trench at a time when the second trench reaches the buried oxide layer.

Abstract: A lateral semiconductor device including a semiconductor substrate; a buried oxide layer formed on the semiconductor substrate, and an active layer formed on the buried oxide layer. The active layer includes a first conductivity type well region, a second conductivity type well region, and a first conductivity type drift region interposed between the first conductivity type well region and the second conductivity type well region. A region where current flows because of carriers moving between the first conductivity type well region and the second conductivity type well region, and a region where no current flows are formed alternately between the first conductivity type well region and the second conductivity type well region, in a direction perpendicular to a carrier moving direction when viewed in a plan view.

Abstract: A manufacturing method for manufacturing a lateral semiconductor device having an SOI (Silicon on Insulator) substrate, the lateral semiconductor device comprising a semiconductor layer that includes a buried oxide layer and a drift region, the manufacturing method comprising an etching process of etching, by a predetermined depth, a LOCOS oxide that projects from a surface of the semiconductor layer by a predetermined thickness and is embedded in the semiconductor layer by a predetermined thickness, and a trench forming process of simultaneously forming a first trench extending from the drift region toward the buried oxide layer, and a second trench extending from a portion obtained by the etching in the etching process toward the buried oxide layer, at a same etching rate, and stopping forming the first trench and the second trench at a time when the second trench reaches the buried oxide layer.

Abstract: A semiconductor device includes a semiconductor layer; a first type of a first semiconductor element that is arranged in a first element region of the semiconductor layer, has first and second main electrodes, and switches current; and a second type of a second semiconductor element that is arranged in a second element region of the semiconductor layer, has third and fourth main electrodes, and freewheels the current. The first and second element regions are adjacent in a direction orthogonal to a direction in which current flows, and are formed in a loop shape over the entire element region when the semiconductor layer is viewed from above. The first main electrode is electrically connected to the third main electrode, and the second main electrode is electrically connected to the fourth main electrode.

Abstract: A nickel hydrogen storage battery is provided which includes an electrode assembly formed by winding spirally a strip-like negative electrode (4) and a strip-like positive electrode with a separator interposed therebetween, the strip-like negative electrode (4) having a mixture layer containing a hydrogen storage alloy disposed on a core material. The electrode assembly is contained in a bottomed cylindrical container such that the negative electrode (4) forms the outermost peripheral portion. A portion corresponding to an outermost peripheral portion (5) of the negative electrode is a thin portion, and the thin portion is bent in advance in the winding direction of the electrode assembly to form an arc shape. In this manner, when the spirally wound electrode assembly is configured, the outermost peripheral portion of the negative electrode is prevented from peeling from the electrode assembly, and thus the insertability into the bottomed cylindrical container is improved.

Abstract: A nickel metal hydride rechargeable battery has a closed-end tubular container containing a spiral-shaped electrode assembly formed by winding a negative a positive electrode with a separator interposed therebetween such that the outermost periphery of the assembly is the negative electrode which is formed by disposing on a conductive substrate a mixture layer containing a hydrogen-absorption alloy. The positive electrode employs nickel hydroxide as an active material. In the nickel metal hydride rechargeable battery, the surface roughness of the outermost peripheral portion of the mixture layer of the negative electrode which contacts an inner side wall of the closed-end tubular container is 3.5 ?M or more in terms of ten-point average roughness and is larger than the surface roughness of the other portion of the mixture layer. The reduction of oxygen gas during rapid charging is thereby facilitated without lowering the design capacity of the battery.

Abstract: An electrode mixture paste application method includes: a first step of unwinding a core material (2) wound in a coil shape; a second step of applying an electrode mixture paste (5) to both sides of the core material; a third step of adjusting an application amount of the electrode mixture paste; a fourth step of drying a paste-coated sheet with the electrode mixture paste applied to the both sides thereof; and a fifth step of winding the paste-coated sheet (6) in a coil shape, wherein, in the fifth step, the paste-coated sheet is wound such that each of widthwise edge portions of a mixture-formed portion (9) is prevented from sequentially overlapping itself. This can achieve a stable method for applying an electrode mixture paste in which the deformation of an electrode caused by a dog-bone shape generated at both edge portions of a mixture-formed portion can be avoided.

Abstract: A nickel metal hydride rechargeable battery has a closed-end tubular container containing a spiral-shaped electrode assembly formed by winding a negative electrode (1) and a positive electrode with a separator interposed therebetween such that the outermost periphery of the assembly is the negative electrode (1), the negative electrode (1) being formed by disposing on a conductive substrate a mixture layer containing a hydrogen-absorption alloy, the positive electrode employing nickel hydroxide as an active material. In the nickel metal hydride rechargeable battery, the surface roughness of the outermost peripheral portion of the mixture layer of the negative electrode (1) which contacts an inner side wall of the closed-end tubular container is 3.5 ?m or more in terms of ten-point average roughness and is larger than the surface roughness of the other portion of the mixture layer. The reduction of oxygen gas during rapid charging is thereby facilitated without lowering the design capacity of the battery.

Abstract: When measuring an edge region, a photo detector with an angle not influenced by the diffracted light, the diffracted light causing noise, is selected to thereby allow for inspection that minimizes the sensitivity reduction. This allows for the management of foreign matters in the outer peripheral portion, which conventionally could not be measured, and this also eliminates the oversight of critical defects on the wafer, thus leading to reduction of failures of IC.

Abstract: A method for synthesizing carbon nanocoils with high efficiency, by determining the structure of carbon nuclei that have been attached to the ends of carbon nanocoils and thus specifying a true catalyst for synthesizing carbon nanocoils is implemented. The catalyst for synthesizing carbon nanocoils according to the present invention is a carbide catalyst that contains at least elements (a transition metal element, In, C) or (a transition metal element, Sn, C), and in particular, it is preferable for the transition metal element to be Fe, Co or Ni. In addition to this carbide catalyst, a metal catalyst of (Fe, Al, Sn) and (Fe, Cr, Sn) are effective. From among these, catalysts such as Fe3InC0.5, Fe3InC0.5Snw and Fe3SnC are particularly preferable. The wire diameter and the coil diameter can be controlled by using a catalyst where any of these catalysts is carried by a porous carrier.

Abstract: When measuring an edge region, a photo detector with an angle not influenced by the diffracted light, the diffracted light causing noise, is selected to thereby allow for inspection that minimizes the sensitivity reduction. This allows for the management of foreign matters in the outer peripheral portion, which conventionally could not be measured, and this also eliminates the oversight of critical defects on the wafer, thus leading to reduction of failures of IC.

Abstract: When measuring an edge region, a photo detector with an angle not influenced by the diffracted light, the diffracted light causing noise, is selected to thereby allow for inspection that minimizes the sensitivity reduction. This allows for the management of foreign matters in the outer peripheral portion, which conventionally could not be measured, and this also eliminates the oversight of critical defects on the wafer, thus leading to reduction of failures of IC.

Abstract: A rechargeable battery electrode of the present invention is produced by filling voids in a three-dimensional metal porous body (1) with an active material (2). A metal-rich layer (3) having a metal density greater than other portions is provided in a region except for thicknesswise surface layer portions of the three-dimensional metal porous body. The metal-rich layer is allowed to be responsible for current collecting characteristics, and the configuration thereof is optimized. In this manner, a rechargeable battery electrode excellent in both short circuit resistance and current collecting characteristics is achieved.

Abstract: An electrode mixture paste application method includes: a first step of unwinding a core material (2) wound in a coil shape; a second step of applying an electrode mixture paste (5) to both sides of the core material; a third step of adjusting an application amount of the electrode mixture paste; a fourth step of drying a paste-coated sheet with the electrode mixture paste applied to the both sides thereof; and a fifth step of winding the paste-coated sheet (6) in a coil shape, wherein, in the fifth step, the paste-coated sheet is wound such that each of widthwise edge portions of a mixture-formed portion (9) is prevented from sequentially overlapping itself. This can achieve a stable method for applying an electrode mixture paste in which the deformation of an electrode caused by a dog-bone shape generated at both edge portions of a mixture-formed portion can be avoided.

Abstract: The present invention realizes a nanotube probe with high durability that can be manufactured in short time with less impurities adhered to the holder sustaining the nanotube. The nanotube probe according to this invention is constructed by fastening a nanotube 8 on the protruded portion 4 of a cantilever by way of at least two partial coating films 12a and 12b. One or more additional partial coating films may be formed in the intermediate area between these two partial coating films. Each partial coating film is formed by irradiating electron beam 10 on the position where the nanotube 8 is in contact with the protruded portion 4 of the cantilever. The partial coating films are separated not to overlap each other. By minimizing the size of partial coating film as well as by narrowing down the beam diameter, coating time may be further shortened. With the beam diameter narrowed down, excessive deposit of impurities can be put under control.

Abstract: A nickel hydrogen storage battery is provided which includes an electrode assembly formed by winding spirally a strip-like negative electrode (4) and a strip-like positive electrode with a separator interposed therebetween, the strip-like negative electrode (4) having a mixture layer containing a hydrogen storage alloy disposed on a core material. The electrode assembly is contained in a bottomed cylindrical container such that the negative electrode (4) forms the outermost peripheral portion. A portion corresponding to an outermost peripheral portion (5) of the negative electrode is a thin portion, and the thin portion is bent in advance in the winding direction of the electrode assembly to form an arc shape. In this manner, when the spirally wound electrode assembly is configured, the outermost peripheral portion of the negative electrode is prevented from peeling from the electrode assembly, and thus the insertability into the bottomed cylindrical container is improved.

Abstract: A catalyst for manufacturing carbon substances, such as carbon nanotube that has a diameter of 1000 nm or less, the catalyst containing at least iron, cobalt or nickel of a first element group and tin or indium of a second element group. The catalyst can be formed by at least tin and indium in addition to cobalt or nickel. The former catalyst provides a 2-component type catalyst and a multi-component type catalyst that is composed on the basis of the 2-component type catalyst, and the later catalyst provides a 3-component type catalyst and a multi-component type catalyst that is composed on the basis of the 3-component type catalyst.