Abstract: The present inventors revealed a TTF-1-specific oncogenic process by elucidating the molecular mechanism regulated by the master regulatory factor TTF-1. The present inventors focused on the elucidation of the essence of the lineage-specific survival signal which is a novel canceration signal. Thus, the present inventors found that the expression of ROR1, which is a receptor tyrosine kinase, is induced by the master regulatory factor TTF-1, and demonstrated the presence of a characteristic canceration signal transduction system.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: The present invention provides novel antibodies that recognize the extracellular domain of a human CLCP1 antigen; nucleic acids encoding the antibodies; vectors carrying the nucleic acids in an expressible manner; transformed cells containing the vectors; methods for producing the antibodies; diagnostic methods for cancer or prognosis of cancer, immunohistological or immunocytological assay methods, and kits for determining the expression level of CLCP1 in cells or tissues, all of which use the antibodies; pharmaceutical compositions comprising the antibodies; agents for treating or preventing CLCP1-expressing cancer; agents for inhibiting growth, migration, invasion, or metastasis of CLCP1-expressing cancer cells; immunostaining agents for staining CLCP1-expressing cancer cells; and agents for treating or preventing CLCP1-expressing tumor.

Abstract: The present invention provides a novel indoline derivative or a pharmacologically acceptable salt thereof or a solvate of the derivative or a salt thereof represented by the following formula (1) that has an excellent butyrylcholinesterase inhibitory activity. In the formula, R1 represents an alkyl group, a cycloalkyl group, a heterocycloalkyl group, an aryl group, a heteroaryl group, an arylalkyl group, a heteroarylalkyl group, a cycloalkylalkyl group, a heterocycloalkylalkyl group, a dihydrofurylalkyl group, an alkenyl group, a tetrahydronaphthyl group, or an indanyl group; R2 represents a hydrogen atom, an alkyl group, an arylalkyl group, a cycloalkylalkyl group, a heteroarylalkyl group, a heterocycloalkylalkyl group, an aryl group, or an acyl group; R3 each independently represents a hydrogen atom, an alkyl group, or a dialkylaminocarbonyl group; R4 each independently represents a hydrogen atom or an alkyl group; and R5 represents a hydrogen atom or an alkyl group.

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A total heat exchanger unit includes a controller for, upon receipt of a stop signal for stopping optional ventilation operation, terminating the optional ventilation operation and starting forced ventilation operation, and upon receipt of a start signal for starting the optional ventilation operation, terminating the forced ventilation operation and starting the optional ventilation operation. The controller allows intermittent operation of an air supply fan and an exhaust fan during the forced ventilation operation.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: According to one embodiment, a solid-state imaging device includes a photoelectric conversion element, a light blocking section, and a protective layer. The protective layer protects the photoelectric conversion element and the light blocking section. A step section is formed on a surface of the protective layer. The step section is formed having a difference in height in a direction perpendicular to an irradiation surface of the photoelectric conversion element. The step section is provided in the light receiving area.

Abstract: The present invention provides a method of confirming the gene expression, useful in the decision of a five year survival rate of a patient with lung cancer and the use of a DNA probe kit in the method. A method useful in the decision of a survival rate of a patient with non-small cell lung cancer comprising confirming the expression strength of at least one gene in lung cancer tissues isolated from the patient.

Abstract: To develop a highly safe measure to treat Alzheimer's disease using a secretase-inhibiting substance, there is provided a compound represented by the following general formula (I) or a salt thereof: wherein A represents a phenyl group or the like, R1 represents a chlorine atom, a bromine atom, or a nitro group or the like, R2, R3, R4, and R5 each represent a hydrogen atom or the like, and L represents CH2—CH2 or CH?CH.

Abstract: An integrated semiconductor optical-emitting device includes a surface-emission laser diode and an EA-type semiconductor optical modulator integrated commonly on a GaAs substrate in a direction perpendicular to the GaAs substrate.

Abstract: In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than that at the second resonance wavelength on the side of long wavelength. An absorption coefficient of an optical absorption layer when no electric field is applied is small for the first and second resonance wavelengths, and when an electric field is applied, an absorption coefficient of the optical absorption layer for the first resonance wavelength on the side of short wavelength is larger than that for the second resonance wavelength on the side of long wavelength.

Abstract: A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

Abstract: The present invention provides a method of confirming the gene expression, useful in the decision of a five year survival rate of a patient with lung cancer and the use of a DNA probe kit in the method. A method useful in the decision of a survival rate of a patient with non-small cell lung cancer comprising confirming the expression strength of at least one gene selected from the group consisting of in lung cancer tissues isolated from the patient.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A surface-emitting laser diode device that oscillates in a direction perpendicular to the substrate is provided. This surface-emitting laser diode device includes: an active layer; a resonator structure including a first distributed Bragg reflector and a second distributed Bragg reflector that face each other and sandwich the active layer; a hole passage that extends from a first electrode to the active layer; an electron passage that extends from a second electrode to the active layer; a hole restricting structure that is located in the hole passage and defines a region for confining holes to the active layer; and an optical mode control structure that includes a non-oxide region provided in the resonator structure and an oxide region surrounding the non-oxide region, each region containing Al as a constituent element. In this surface-emitting laser diode, the area of the non-oxide region is smaller than the area of the hole restricting structure.

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract: A plurality of optical members (lenses) for use in ultraviolet region are mutually stuck. A fluorine-based organic compound (for example, fluorine-based oil) is provided between them. The periphery of the optical members is sealed with a sealant. As the sealant, an adhesive fluorine resin, for example, a soluble fluorine resin is used.

Abstract: A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.