Abstract: A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

Abstract: The present invention provides a novel compound that is structurally similar to curcumin and has a suppressive effect on A? aggregation, a degradative effect on A? aggregates, an inhibitory effect on ?-secretase, and a protective effect on neurons. The novel compound is a compound represented by the following general formula (Ia) or a salt thereof: wherein R1 represents a 4-hydroxy-3-methoxyphenyl group or the like, and R2 represents a 1H-indol-6-yl group or the like.

Abstract: An air conditioning ventilator includes a ventilation unit, an air conditioning unit and a bypass channel. The ventilation unit has an air supply channel configured to supply air from an outdoor space to a target space, and an air supply fan configured to create a first airflow from the outdoor space to the target space within the air supply channel. The air conditioning unit has an intake channel configured to take in air from the target space, a temperature regulator configured to regulate the temperature of air that has passed through the intake channel, a discharge channel configured to discharge temperature-adjusted air that has been regulated by the temperature regulator to the target space, and an air-conditioning fan configured to create a second airflow from the intake channel to the discharge channel via the temperature regulator. The bypass channel bypassed the air supply channel and the discharge channel.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: To transfer web contents to a web server from a computer through a network, a plurality of files composing the web contents are stored in the computer. A processor of the computer then detects files to be transferred from the plurality of files to create a transfer file list table. A transfer priority of the files to be transferred is determined by the processor on the basis of reference relation data of the files to be transferred which are designated in the transfer file list table and file format data of the plurality of files to create a transfer priority list table for the files to be transferred. The files to be transferred are transferred to the web server from a communication controller of the computer through the network by the processor in order of the transfer priority set in the transfer priority list table.

Abstract: The surface reflection is prevented by application of a black paint to an element such as a unit or parts forming an optical system, in particular an inner face of a camera lens tube portion and the end face portion of a lens, or the like. Application of the black paint to the element leads to the formation of a black coating film of from 0.35% to 0.7% that is an extremely low reflectance onto a surface of the element in a wide-ranging wavelength region from 380 nm to 780 nm, regardless of the material thereof.

Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 ?m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.

Abstract: An optical element includes glass substrates adhered to surfaces of a birefringent material film through an adhesive. The optical element has a coating for moisture-proof. The moisture-proof treatment is performed by applying a mixed solution of a soluble fluorine resin and an ethylenic compound to end surfaces of the glass substrates and the birefringent material film. Otherwise, the optical element is dipped in a solution prepared by mixing a soluble fluorine resin and an ethylenic compound in a predetermined mixing ratio, so as to moisture-proof the end surfaces of the glass substrates and the birefringent material film. The birefringent material film is a phase difference film. The soluble fluorine resin is an amorphous fluorine resin. The ethylenic compound is PTFE.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: The memory controller updates a count number based on a new assignment of a logical block to a physical block, and writes count information in the physical block to which the logical block is newly assigned. The count information is defined by the count number. The memory controller decides, based on the count number and the count information stored in each physical block, whether or not to transfer stored data in a physical block to another physical block.

Abstract: A deep ultraviolet transmissive adhesive capable of transmitting deep ultraviolet light which comprises a substance represented by the chemical formula given below, and a substrate produced using the deep ultraviolet transmissive adhesive, CH2?CH—CH2—O—(CH2)2n—O—CH2—CH?CH2 In the above formula, n is an odd number represented by 2m+1 (m being a natural number).

Abstract: In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than that at the second resonance wavelength on the side of long wavelength. An absorption coefficient of an optical absorption layer when no electric field is applied is small for the first and second resonance wavelengths, and when an electric field is applied, an absorption coefficient of the optical absorption layer for the first resonance wavelength on the side of short wavelength is larger than that for the second resonance wavelength on the side of long wavelength.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than that at the second resonance wavelength on the side of long wavelength. An absorption coefficient of an optical absorption layer when no electric field is applied is small for the first and second resonance wavelengths, and when an electric field is applied, an absorption coefficient of the optical absorption layer for the first resonance wavelength on the side of short wavelength is larger than that for the second resonance wavelength on the side of long wavelength.

Abstract: An optical semiconductor device operable in a 0.6 ?m band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less.

Abstract: A semiconductor laser is disclosed with which a VCSEL can be constituted with a simplified configuration for optical transmission at a transmission rate higher than 10 Gbps. The semiconductor laser includes a resonator including a first active region able to emit light in response to current injection and a second active region able to emit light in response to external excitation light. Multilayer film reflecting mirrors sandwich the resonator from two opposite sides. The first active region and the second active region generate light at a wavelength the same as the resonance mode of the resonator.

Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 ?m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.

Abstract: To transfer web contents to a web server from a computer through a network, a plurality of files composing the web contents are stored in the computer. A processor of the computer then detects files to be transferred from the plurality of files to create a transfer file list table. A transfer priority of the files to be transferred is determined by the processor on the basis of reference relation data of the files to be transferred which are designated in the transfer file list table and file format data of the plurality of files to create a transfer priority list table for the files to be transferred. The files to be transferred are transferred to the web server from a communication controller of the computer through the network by the processor in order of the transfer priority set in the transfer priority list table.