Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: Members such as a laser diode (10) that is a light source, a diffraction grating (11), a polarizing beam splitter (12) and a collimator lens are arranged in a casing (20). An optical head device having such a casing (20) is improved, so that a film wavelength plate (14) is directly attached to the casing (20) in a form free from a support substrate. The film wavelength plate (14) consists of only one film and has a thickness of 0.2 to 1.0 mm. Particularly, the film wavelength plate is preferably constituted by fusing polycarbonate films in a three-layer structure.

Abstract: A wavelength plate including an organic thin film adhered to a glass substrate through an adhesive is built in an optical head optical system used in a predetermined using temperature range. The adhesive has a glass transition temperature higher than the predetermined using temperature range, and the linear expansion coefficient (K1) of the adhesive, the linear expansion coefficient (K2) of the organic thin film, and the linear expansion coefficient (K3) of the glass substrate have the relation of K3?K1 and K1?K2 under the predetermined using temperature range.

Abstract: An optical element includes glass substrates adhered to surfaces of a birefringent material film through an adhesive. The optical element has a coating for moisture-proof. The moisture-proof treatment is performed by applying a mixed solution of a soluble fluorine resin and an ethylenic compound to end surfaces of the glass substrates and the birefringent material film. Otherwise, the optical element is dipped in a solution prepared by mixing a soluble fluorine resin and an ethylenic compound in a predetermined mixing ratio, so as to moisture-proof the end surfaces of the glass substrates and the birefringent material film. The birefringent material film is a phase difference film. The soluble fluorine resin is an amorphous fluorine resin. The ethylenic compound is PTFE.

Abstract: A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 ?m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5–50 nm.

Abstract: A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

Abstract: An image sensor such as the conventional CMOS image sensor, in which automatic controls including so-called automatic iris control and white balance adjustment for adjusting the sensor sensitivity, namely the charge accumulation time in each pixel, according to the brightness of the image sensing ambience are performed, involves the problem that, when the frame rate of the image sensor is slowed to save power consumption, the operation of the automatic control systems will also become slower and the image quality deteriorates. In the invented image sensor system using a CMOS image sensor, while a CMOS image sensor is operated at the full frame rate all the time, a circuit for processing image signals from the CMOS image sensor is operated at a speed close to that of full frame processing only when the power supply is turned on or when the image sensing ambience varies and switched to a lower frame processing speed when automatic controls, including iris control, have become stabilized.

Abstract: There is provided a regulator pin structure that is not only easily assembled but also capable of holding a hairspring in a gap without a risk of the hairspring being released, a regulator with the regulator pin structure, a structure of balance with hairspring, and a mechanical timepiece. A regulator pin structure of a regulator that is a component of a structure of balance with hairspring of a mechanical timepiece includes a pin-like body, a base that is situated on one end of the body and mounted to a body of regulator such that the position of the base is adjustable around the pivotal center axis E of the body, and a pair of two-pronged legs that extend from the other end of the body. The regulator pin structure is configured such that part of the outer end of a hairspring that is situated beyond a reformed portion of the hairspring along the outer circumference direction is freely fitted in a gap between the legs.

Abstract: Turning on and off of the light source illuminating an object to be imaged is judged based on brightness changes in small and large areas set up in the frame and an electric charge storage time for each pixel is set up to be equal to the turning-on-and-off period of the light source or an integral multiple thereof. The charge storage time is changed over responsive to the turning-on-and-off period of the light source or the integral multiple thereof to set up a stored light amount for each pixel stepwise and difference in the stored light amount between steps is interpolated by continuous gain control of read-out signals of pixels.

Abstract: An optical member (for example, optical fiber) is dipped in a coating solution having a film forming material dissolved therein to form an antireflection film on the end surface of the optical member. When the optical member is pulled up from the coating solution, the angle formed by the level of the coating solution and the end surface of the optical member, or the pulling speed is varied to adjust the film thickness or reflectance of the antireflection film to be formed on the end surface of the optical member. The film forming material is a fluorine-containing compound. The antireflection film is formed by dipping. The film thickness of the antireflection film is uneven.

Abstract: A semiconductor laser is disclosed with which a VCSEL can be constituted with a simplified configuration for optical transmission at a transmission rate higher than 10 Gbps. The semiconductor laser includes a resonator including a first active region able to emit light in response to current injection and a second active region able to emit light in response to external excitation light. Multilayer film reflecting mirrors sandwich the resonator from two opposite sides. The first active region and the second active region generate light at a wavelength the same as the resonance mode of the resonator.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: To provide a power reserve display mechanism having a mainspring remaining amount display showing a novel behavior and a mechanical timepiece having the same. A power reserve display mechanism of a mechanical timepiece includes a displacement conversion mechanism having a first rotation input portion coupled to a ratchet wheel and rotated in accordance with rotation of the ratchet wheel and a second rotation input portion coupled to a barrel wheel and rotated in accordance with rotation of the barrel wheel as well as an output portion moved linearly in one direction in accordance with rotation of the first rotation input portion and moved linearly in other direction in accordance with rotation of the second rotation input portion, and mainspring accumulating remaining amount display means provided at the output portion of the displacement conversion mechanism for displaying a mainspring accumulating remaining amount by a position along a linear line.

Abstract: A deep ultraviolet transmissive adhesive capable of transmitting deep ultraviolet light which comprises a substance represented by the chemical formula given below, and a substrate produced using the deep ultraviolet transmissive adhesive, CH2?CH—CH2—O—(CH2)2n—O—CH2—CH?CH2 In the above formula, n is an odd number represented by 2m+1 (m being a natural number).

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract: A calendar timepiece has a main plate, a time indicator mounted on the main plate for undergoing rotational movement to indicate time information, a date indicator mounted for undergoing rotation to indicate date information, and a date indicator driving wheel mounted on the main plate for undergoing rotation. A date jumper is disposed on the main plate and has a train wheel comprised of a date indicator setting portion for controlling rotation of the date indicator by engagement with the inner teeth portion of the date indicator. The date indicator setting portion has a first setting portion for contacting a tip of a first tooth of the date indicator, a second setting portion, and a third setting portion for contacting a tip of a second tooth of the date indicator. Each of the first, second, and third setting portions has a generally linear surface portion disposed at an angle relative to one another.