Abstract: To provide a power reserve display mechanism having a mainspring remaining amount display showing a novel behavior and a mechanical timepiece having the same. A power reserve display mechanism of a mechanical timepiece includes a displacement conversion mechanism having a first rotation input portion coupled to a ratchet wheel and rotated in accordance with rotation of the ratchet wheel and a second rotation input portion coupled to a barrel wheel and rotated in accordance with rotation of the barrel wheel as well as an output portion moved linearly in one direction in accordance with rotation of the first rotation input portion and moved linearly in other direction in accordance with rotation of the second rotation input portion, and mainspring accumulating remaining amount display means provided at the output portion of the displacement conversion mechanism for displaying a mainspring accumulating remaining amount by a position along a linear line.

Abstract: In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than that at the second resonance wavelength on the side of long wavelength. An absorption coefficient of an optical absorption layer when no electric field is applied is small for the first and second resonance wavelengths, and when an electric field is applied, an absorption coefficient of the optical absorption layer for the first resonance wavelength on the side of short wavelength is larger than that for the second resonance wavelength on the side of long wavelength.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A plurality of optical members (lenses) for use in ultraviolet region are mutually stuck. A fluorine-based organic compound (for example, fluorine-based oil) is provided between them. The periphery of the optical members is sealed with a sealant. As the sealant, an adhesive fluorine resin, for example, a soluble fluorine resin is used.

Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to a wavelength of 1.

Abstract: To realize a chronograph timepiece capable of firmly and simultaneously zeroing an hour heart cam, a second heart cam and a minute heart cam. A chronograph timepiece of the invention includes a hammer operated by operating a reset button for controlling to operate to zero an hour chronograph wheel & pinion, a minute chronograph wheel & pinion and a second chronograph wheel & pinion. When the hammer is brought into contact with an hour heart cam, a second heart cam and a minute heart cam, a position of the hammer is determined only by the hour heart cam, the second heart cam and the minute heart cam. When the hammer is brought into contact with the hour heart cam, the second heart cam and the minute heart cam, a direction of a press force exerted to the hammer is constituted to pass a rotational center of the second chronograph wheel.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: An integrated semiconductor optical-emitting device includes a surface-emission laser diode and an EA-type semiconductor optical modulator integrated commonly on a GaAs substrate in a direction perpendicular to the GaAs substrate.

Abstract: Measurement information of a patient 11 in a clinic, video of a medical procedure site, voice in the clinic, and video information of a body including an affected part of the patient are integrated and sent to a medical cockpit through a network 40. In the medical cockpit, the video of the clinic is outputted on a large screen monitor 73, and the sent measurement information and a plurality of sets of body video information are switched and inset in predetermined positions in the monitor 73 and reproduced. An enlarged moving image of the affected part is reproduced on a main monitor 71. Measurement information of the patient 11, moving image information such as video information of the body including the affected part of the patient or enlarged image information is reproduced on an auxiliary monitor 72. The voice information of the clinic is reproduced by a surround speaker 76.

Abstract: A surface-emitting laser diode device that oscillates in a direction perpendicular to the substrate is provided. This surface-emitting laser diode device includes: an active layer; a resonator structure including a first distributed Bragg reflector and a second distributed Bragg reflector that face each other and sandwich the active layer; a hole passage that extends from a first electrode to the active layer; an electron passage that extends from a second electrode to the active layer; a hole restricting structure that is located in the hole passage and defines a region for confining holes to the active layer; and an optical mode control structure that includes a non-oxide region provided in the resonator structure and an oxide region surrounding the non-oxide region, each region containing Al as a constituent element. In this surface-emitting laser diode, the area of the non-oxide region is smaller than the area of the hole restricting structure.

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract: A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 ?m or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.

Abstract: A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.

Abstract: A Stirling cycle engine of a simplified structure, having enhanced reliability by improving abrasion resistance and lubricity of components thereof. When a piston reciprocates in a cylinder along the axial direction thereof by a driving mechanism, a displacer reciprocates in the cylinder along the axial direction thereof accompanying the reciprocation of the piston. The piston and the displacer slide in contact with the inner peripheral surface of the cylinder, but the piston and the displacer are each integrally made from an engineering plastic such as PPS having fine strength, dimensional stability, abrasion resistance and formability, while PPS is made CFRP. Moreover, solid lubricity agent is added to PPS. Accordingly, abrasion resistance, lubricity, strength and precision of the piston and displacer are enhanced, while the piston and the displacer can be simply produced by a well-known plastic molding.

Abstract: An optical semiconductor device operable in a 0.6 ?m band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less.

Abstract: A surface-emitting laser diode device that oscillates in a direction perpendicular to the substrate is provided. This surface-emitting laser diode device includes: an active layer; a resonator structure including a first distributed Bragg reflector and a second distributed Bragg reflector that face each other and sandwich the active layer; a hole passage that extends from a first electrode to the active layer; an electron passage that extends from a second electrode to the active layer; a hole restricting structure that is located in the hole passage and defines a region for confining holes to the active layer; and an optical mode control structure that includes a non-oxide region provided in the resonator structure and an oxide region surrounding the non-oxide region, each region containing Al as a constituent element. In this surface-emitting laser diode, the area of the non-oxide region is smaller than the area of the hole restricting structure.

Abstract: A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

Abstract: A phase difference plate is formed by bonding a fixed substrate which has a transmission function or a reflection function to at least one of surfaces of an organic thin film through an adhesive. The phase difference plate has a relation of E1?E2>E3 wherein E1 is a linear expansion coefficient of the organic thin film, E2 is a linear expansion coefficient of the adhesive, and a linear expansion coefficient E3 of the fixed substrate. When the laser wavelength is fluctuated by temperature change, phase difference is changed so as to match to the fluctuation of wavelength. An optical head device has the phase difference plate in such a way that an arrangement position of the phase difference plate is changeable.

Abstract: A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.