Abstract: A pickling apparatus for pickling a strip of metal being conveyed is equipped with: a pickling tank for storing an acid solution; a surrounding part disposed in the pickling tank so as to surround the strip immersed in the acid solution in the pickling tank; and an oxidant supply part for supplying a liquid oxidant toward an inside of the surrounding part.

Abstract: The present invention relates to a novel fused ring compound having urea structure that exhibits excellent NAMPT activating effect, and a method using the same for treating/preventing metabolic disorder, cardiovascular and kidney disease, mitochondrial disease, neurodegenerative disease, ocular disease, and muscle wasting disorder. The present invention provides a compound represented by following formula (I) or a pharmacologically acceptable salt: wherein A, B, R1, R2 and R3 represent the same meanings as in the claims.

Abstract: The present invention relates to a novel azole derivative as an apelin receptor agonist and a method for treating cardiovascular disease, diabetic disease, renal disease, hypertension, and arteriosclerosis, etc., using the same. The present invention provides a compound represented by formula (I) or a pharmacologically acceptable salt thereof wherein X1 represents —N? or —CH?, X2 represents —CH? or —N?, R1 and R2 each represent a C1 to C6 alkoxy group or the like, R3 represents a heteroaryl group (the heteroaryl group is optionally substituted by a methyl group or the like) or the like, and R4 represents a C1 to C6 alkylthio group or a C2 to C6 alkenyl group (the C1 to C6 alkylthio group and the C2 to C6 alkenyl group are each optionally substituted by one carboxy group or the like) or the like.

Abstract: According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.

Abstract: A vehicle fender air intake assembly for a vehicle can include a central baffle configured to be mounted to a body structure of the vehicle, a central shutter mounted on the central baffle, a lower baffle configured to be mounted to the body structure, a lower shutter mounted on the lower baffle, and an upper baffle including a first side and a second side that opposes the first side. The upper baffle can terminate at the first side and the second side. The first side can include a first opening in fluid communication with the central baffle, and the second side can include a second opening in fluid communication with the central baffle.

Abstract: Provided is a semiconductor module including a plurality of SiC chips electrically connected in parallel and each having a MOSFET and a parasitic transistor formed therein, and a control unit which controls switching of the MOSFET in each of the SiC chips, and for all of the plurality of SiC chips, at least in a state where the parasitic transistor is turned on, the control unit controls, to 0.9 ?s or less, a turn-off time of the MOSFET corresponding.

Abstract: A method for manufacturing a semiconductor substrate, including: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film directly or indirectly on the substrate; forming a resist pattern directly or indirectly on the resist underlayer film; and performing etching using the resist pattern as a mask. The composition for forming a resist underlayer film contains: a polymer having a repeating unit represented by formula (1) and a solvent. Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a monovalent group including an aromatic ring having 5 to 40 ring atoms and includes at least one group selected from the group consisting of groups represented by formula (2-1) and groups represented by formula (2-2).

Abstract: An inventory management system has an inventory management device and a terminal device, and the inventory management device includes an inventory status generation unit configured to generate information indicating an inventory status of a medical device for each of medical institutions, by referring to a required inventory storage unit storing information indicating a required inventory quantity of the medical device for each of the medical institutions, and a state management storage unit storing state management information associating a unique ID of the medical device dispatched to one medical institution with a collection status of the medical device paid out from the one medical institution to a patient for each of the medical institutions, and an output unit configured to output the information indicating the inventory status to the terminal device.

Abstract: To provide a hair growth agent and a scalp care agent which are topical agents that exhibit scalp care effect as well as effect in terms of causing increase in hair shaft diameter and effect in terms of improving maximum hair shaft length and improving hair shaft elongation rate and new hair growth and increasing expression of genes contributing to hair growth in dermal papilla cells and promoting hair shaft growth at head hair, beard, eyebrows, and/or eyelashes, these are made to contain an active ingredient in the form of phytosphingosine.

Abstract: The present invention relates to a compound or a pharmacologically acceptable salt thereof having excellent tissue non-specific alkaline phosphatase inhibitory activity. The present invention provides a compound represented by the following formula (I): wherein X1 represents a nitrogen atom or CR9, R1 represents a hydrogen atom, a C1-C6 alkyl group, or a C1-C6 alkoxy group, R2 represents a halogen atom, R3 represents a hydrogen atom or a halogen atom, R4 represents a hydrogen atom or a halogen atom, and R5 represents a C1-C3 alkylsulfonyl group, a substituted C1-C6 alkyl group, a substituted C1-C6 haloalkyl group, a substituted C1-C6 alkoxy group, or a substituted C1-C6 alkylamino group, or a pharmacologically acceptable salt thereof.

Abstract: A gate insulating film has a multilayer structure including a SiO2 film, a LaAlO3 film, and an Al2O3 film that are sequentially stacked, relative permittivity of the gate insulating film being optimized by the LaAlO3 film. In forming the LaAlO3 film constituting the gate insulating film, a La2O3 film and an Al2O3 film are alternately deposited repeatedly using an ALD method. The La2O3 film is deposited first, whereby during a POA performed thereafter, a sub-oxide of the surface of the SiO2 film is removed by a cleaning effect of lanthanum atoms in the La2O3 film. A temperature of the POA is suitably set in a range from 700 degrees C. to less than 900 degrees C.

Abstract: The present invention relates to a novel fused ring compound having urea structure that exhibits excellent NAMPT activating effect, and a method using the same for treating/preventing metabolic disorder, cardiovascular and kidney disease, mitochondrial disease, neurodegenerative disease, ocular disease, and muscle wasting disorder. The present invention provides a compound represented by following formula (I) or a pharmacologically acceptable salt: Formula (I) wherein A, B, R, R2 and R3 represent the same meanings as in the claims.

Abstract: A p++-type outer peripheral contact region is provided in an edge termination region and surrounds a periphery of an active region in a rectangular shape having rounded corners, in a plan view. The p++-type outer peripheral contact region faces a gate runner on a front surface of a semiconductor substrate via an insulating layer. In the active region, a p++-type region is provided facing a gate pad on the front surface of the semiconductor substrate via the insulating layer. The p++-type outer peripheral contact region and the p++-type region are provided apart from p++-type contact regions that form source contacts with a source electrode. The p++-type contact regions and contact holes in which the source contacts are formed are disposed in a uniform layout spanning an entire area of the active region so that an end side and a center side of the active region have the same layout.

Abstract: An AlSi electrode containing an aluminum alloy that contains silicon is sputtered on a surface of a semiconductor substrate that contains silicon carbide. Si nodules having a dendrite structure precipitate in AlSi electrode. At least some of the Si nodules have a dendrite structure, and the rest of the Si nodules have a prismatic structure. A height of the Si nodules having either dendrite structures or prismatic structures in the AlSi electrode in a thickness direction of the AlSi electrode is not more than 2 ?m. A height of the Si nodules having the dendrite structures in the AlSi electrode, preferably, may be 1 ?m or less. A solid solubility of silicon in the AlSi electrode is in a range of 0.3 wt % to 1.59 wt %. A sputtering temperature of the AlSi electrode is in a range of 430 degrees C. to 577 degrees C.

Abstract: P++-type contact regions are disposed apart from one another, and in a p?-type base region, at least hole current regions directly beneath the contact regions have an impurity concentration of not more than 5×1016/cm3. A p+-type region for mitigating electric field and disposed between adjacent gate trenches is separated into first portions in contact with the hole current regions and second portions in contact with only a portion of the base region other than the hole current regions. During conduction of body diodes, forward current flows into an n?-type drain region through the contact regions, the hole current regions, and the first portions. Thus, in the drain region, holes from the base region are injected only into hole injection regions that are directly beneath the first portions, but are not injected into regions that respectively surround peripheries of the hole injection regions.

Abstract: A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a group represented by formula (1-1) or (1-2). In the formulas (1-1) and (1-2), X1 and X2 are each independently a group represented by formula (i), (ii), (iii) or (iv); * is a bond with the carbon atom in the formula (1); and Ar2, Ar3 and Ar4 are each independently a substituted or unsubstituted aromatic ring having 6 to 20 ring atoms that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).

Abstract: A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 10 to 40 ring atoms; and R0 is a monovalent group including a heteroaromatic ring which includes a sulfur atom as a ring-forming atom.

Abstract: To provide an agent that increases expression of genes contributing to hair growth in dermal papilla cells, a scalp care agent, and a hair growth agent which are topical agents that exhibit effect in terms of causing increase in hair shaft diameter and improving maximum hair shaft length and improving hair shaft elongation rate and new hair growth and increasing expression of genes contributing to hair growth in dermal papilla cells and promoting hair shaft growth at head hair, beard, eyelashes, and/or eyebrows, such agents are made to contain an active ingredient in the form of palmitoyl dipeptide-5 diaminobutyloyl hydroxythreonine.

Abstract: To provide an agent that increases expression of genes contributing to hair growth in dermal papilla cells, a scalp care agent, and a hair growth agent which are topical agents that exhibit effect in terms of causing increase in hair shaft diameter, and improving maximum hair shaft length, and improving hair shaft elongation rate, and new hair growth and increasing expression of genes contributing to hair growth in dermal papilla cells, and promoting hair shaft growth at head hair, beard, eyelashes, and/or eyebrows, such agents are made to contain an active ingredient in the form of palmitoyl dipeptide-5 diaminohydroxybutyrate.

Abstract: An object of the present invention is to provide a compound useful as a therapeutic drug for an autoimmune disease such as systemic lupus erythematosus (SLE) and lupus nephritis of SLE patients by suppressing immune cell function by inhibiting proliferation of activated T cells and production of interferon alpha (IFN-?). The present invention provides a compound represented by formula (I): wherein R1, R2 and R3 are the same as defined in the specification, or a pharmaceutically acceptable salt thereof.