Abstract: Disclosed is a method for producing a tooth, which comprises the steps of: positioning a first cell mass substantially comprising either one of amniotic mesenchymal cells or epithelial cells, and a second cell mass substantially comprising the other one in the inside of a support carrier while keeping them in close contact with each other without being mixed together; and culturing the first and second cell masses in the inside of the support carrier.

Abstract: The present invention provides a method for producing mesenchymal cells for production of mesenchymal cells for formation of a tooth, the method comprising: culturing totipotent stem cells in the presence of a differentiation inducer to produce a cell population after differentiation induction treatment, the cell population containing CD44-positive and CD29-positive cells or CD44-positive and CD 106-positive cells; and selecting, from the cell population after the differentiation induction treatment, the CD44-positive and CD29-positive cells or CD44-positive and CD 106-positive cells as the mesenchymal cells for the formation of the tooth.

Abstract: A receiving section receives a supply request for product from a terminal set up at a shop or a terminal used by a client. A first determination processing section determines whether a product in stock can be reserved for an order. A first reserve processing section reserves the product in stock for the order when the first determination processing section determines that the product can be reserved. A second determination processing section determines whether a semifinished product necessary for manufacturing a final product can be reserved when the first determination processing section determines that the product reserve is impossible. A second reserve processing section reserves the semifinished product for the order when the second determination processing section determines that the semifinished product can be reserved.

Abstract: Mutant polypeptides of the present invention contain an Fc region in which a cysteine residue is substituted for the second amino acid from the glycosylation site to the N terminal side in the Fc region. The Fc region is preferably a human IgG Fc region. The mutant polypeptides of the present invention may also contain an N-linked sugar chain at the glycosylation site in Fc region. Furthermore, a polypeptide domain other than the Fc region of the mutant polypeptides of the present invention may be a polypeptide molecule that recognizes a human cell surface molecule.

Abstract: A first cell mass substantially containing only either one of mesenchymal cells or epithelial cells and a second cell mass substantially containing only the other one of the cells are positioned in contact with each other inside a support carrier which can maintain a condition of cell contact; and cultured to obtain a tooth having a specific cell placement. Preferably, after the culturing, the support carrier having both cell masses is cultured with kidney cells.

Abstract: A trench MOS type SiC semiconductor device includes a first conductivity semiconductor substrate, a first conductivity drift layer on the substrate, a second conductivity base layer on the drift layer, a first conductivity source layer on the base layer, a stripe shaped trench reaching from the surface of the source layer to the drift layer and having a gate electrode via a gate oxide film, a second conductivity layer on the bottom of the trench, and a second conductivity type region thereon on across-the-width side walls of at least one end of the trench, electrically coupling the second conductivity layer with the base layer. The device allows a low on-resistance without newly forming an electrode connected to the second conductivity layer even in the case of a device in which the second conductivity layer has to be grounded.

Abstract: In a semiconductor device having SiC vertical trench MOSFETs, it is aimed to prevent the generation of large scattering in the channel resistance without largely increasing the average value of channel resistance. A 4H-SiC substrate having a major face thereof that is generally a {0001} face and having an off angle ?. The trench is formed with the standard deviation ? in scattering of the angle formed by a trench side wall face and a substrate major face within a wafer face. By setting the designed value of the angle formed by the trench side wall face and the substrate major face at an any angle ranging from [(60 degrees)+2?] to [(90 degrees)?tan?1 (0.87×tan ?)?2?] in forming the trench in the SiC substrate, a semiconductor device in which the angle formed by the trench side wall face and the substrate major face is 60 degrees or more but not more than [(90 degrees)?tan?1 (0.87×tan ?)] can be obtained.

Abstract: A trench MOS type SiC semiconductor device includes a first conductivity semiconductor substrate, a first conductivity drift layer on the substrate, a second conductivity base layer on the drift layer, a first conductivity source layer on the base layer, a stripe shaped trench reaching from the surface of the source layer to the drift layer and having a gate electrode via a gate oxide film, a second conductivity layer on the bottom of the trench, and a second conductivity type region thereon on across-the-width side walls of at least one end of the trench, electrically coupling the second conductivity layer with the base layer. The device and method for manufacturing the same allow a low on-resistance without newly forming an electrode connected to the second conductivity layer even in the case of a device in which the second conductivity layer has to be grounded.

Abstract: The present invention relates to an oligosaccharide chain added GLP-1 peptide that has higher stability in blood than that of GLP-1 and, preferably, exhibits higher activity of controlling blood-sugar levels than that of GLP-1. The present invention relates to an oligosaccharide chain added GLP-1 peptide having GLP-1 activity, wherein at least one amino acid is substituted with an oligosaccharide chain added amino acid, in: (a) GLP-1; (b) a peptide having the amino acid sequence of GLP-1 with deletion, substitution or addition of one or several amino acids; or (c) a GLP-1 analog.

Abstract: Specific phenylalanine derivatives or pharmaceutically acceptable salts thereof have an antagonistic effect on the ?4 integrins and, therefore, are usable as therapeutic agents or preventive agents for diseases in which ?4 integrin-depending adhesion process participates in the pathology, such as inflammatory diseases, rheumatoid arthritis, inflammatory bowel diseases, systemic lupus erythematosus, multiple sclerosis, Sjögren's syndrome, asthma, psoriasis, allergy, diabetes, cardiovascular diseases, arterial sclerosis, restenosis, tumor proliferation, tumor metastasis and transplantation rejection.

Abstract: The present invention provides an AP-1 activation inhibitor, NF-kappa B activation inhibitor, inflammatory cytokine production inhibitor, matrix metalloprotease production inhibitor, inflammatory cell adhesion molecule expression inhibitor, anti-inflammatory agent, antirheumatic agent, immunosuppressant, cancer metastasis inhibitor, remedy for arteriosclerosis and antiviral agent which contain the benzene derivative of the following general formula (I) or a pharmaceutically acceptable salt thereof as an active ingredient.

Abstract: Specific phenylalanine derivatives or pharmaceutically acceptable salts thereof have an antagonistic effect on the ? 4 integrins and, therefore, are usable as therapeutic agents or preventive agents for diseases in which ? 4 integrin-depending adhesion process participates in the pathology, such as inflammatory diseases, rheumatoid arthritis, inflammatory bowel diseases, systemic lupus erythematosus, multiple sclerosis, Sjögren's syndrome, asthma, psoriasis, allergy, diabetes, cardiovascular diseases, arterial sclerosis, restenosis, tumor proliferation, tumor metastasis and transplantation rejection.

Abstract: Stress is exerted to the SiC crystal in the region, in which the carriers of a SiC semiconductor device flow, to change the crystal lattice intervals of the SiC crystal. Since the degeneration of the conduction bands in the bottoms thereof is dissolved, since the inter-band scattering is prevented from causing, and since the effective electron mass is reduced due to the crystal lattice interval change, the carrier mobility in the SiC crystal is improved, the resistance of the SiC crystal is reduced and, therefore, the on-resistance of the SiC semiconductor device is reduced.

Abstract: Immunization of human antibody-producing transgenic mice, which have been created using genetic engineering techniques, with AILIM molecule as an antigen resulted in various human monoclonal antibodies capable of binding to AILIM and capable of controlling a variety of biological reactions (for example, cell proliferation, cytokine production, immune cytolysis, cell death, induction of ADCC, etc.) associated with AILIM-mediated costimulatory signal (secondary signal) transduction. Furthermore, it has been revealed that the human monoclonal antibody is effective to treat and prevent various diseases associated with AILIM-mediated costimulatory signal transduction, being capable of inhibiting the onset and/or advancement of the diseases.

Abstract: Stress is exerted to the SiC crystal in the region, in which the carriers of a SiC semiconductor device flow, to change the crystal lattice intervals of the SiC crystal. Since the degeneration of the conduction bands in the bottoms thereof is dissolved, since the inter-band scattering is prevented from causing, and since the effective electron mass is reduced due to the crystal lattice interval change, the carrier mobility in the SiC crystal is improved, the resistance of the SiC crystal is reduced and, therefore, the on-resistance of the SiC semiconductor device is reduced.

Abstract: A receiving section receives a supply request for product from a terminal set up at a shop or a terminal used by a client. A first determination processing section determines whether a product in stock can be reserved for an order. A first reserve processing section reserves the product in stock for the order when the first determination processing section determines that the product can be reserved. A second determination processing section determines whether a semifinished product necessary for manufacturing a final product can be reserved when the first determination processing section determines that the product reserve is inadequate. A second reserve processing section reserves the semifinished product for the order when the second determination processing section determines that the semifinished product can be reserved.

Abstract: The present invention provides dihydrodiaryloxazepine derivative represented by the following formula [1], analogs thereof and pharmaceutical compositions containing them.

Abstract: A trench MOS type SiC semiconductor device includes a first conductivity semiconductor substrate, a first conductivity drift layer on the substrate, a second conductivity base layer on the drift layer, a first conductivity source layer on the base layer, a stripe shaped trench reaching from the surface of the source layer to the drift layer and having a gate electrode via a gate oxide film, a second conductivity layer on the bottom of the trench, and a second conductivity type region thereon on across-the-width side walls of at least one end of the trench, electrically coupling the second conductivity layer with the base layer. The device and method for manufacturing the same allow a low on-resistance without newly forming an electrode connected to the second conductivity layer even in the case of a device in which the second conductivity layer has to be grounded.

Abstract: In a semiconductor device having SiC vertical trench MOSFETs, it is aimed to prevent the generation of large scattering in the channel resistance without largely increasing the average value of channel resistance. A 4H-SiC substrate having a major face thereof that is generally a {0001} face and having an off angle ?. The trench is formed with the standard deviation ? in scattering of the angle formed by a trench side wall face and a substrate major face within a wafer face. By setting the designed value of the angle formed by the trench side wall face and the substrate major face at an any angle ranging from [(60 degrees)+2?] to [(90 degrees)?tan?1 (0.87×tan ?)?2?] in forming the trench in the SiC substrate, a semiconductor device in which the angle formed by the trench side wall face and the substrate major face is 60 degrees or more but not more than [(90 degrees)?tan?1 (0.87×tan ?)] can be obtained.

Abstract: Immunization of human antibody-producing transgenic mice, which have been created using genetic engineering techniques, with AILIM molecule as an antigen resulted in various human monoclonal antibodies capable of binding to AILIM and capable of controlling a variety of biological reactions (for example, cell proliferation, cytokine production, immune cytolysis, cell death, induction of ADCC, etc.) associated with AILIM-mediated costimulatory signal (secondary signal) transduction. Furthermore, it has been revealed that the human monoclonal antibody is effective to treat and prevent various diseases associated with AILIM-mediated costimulatory signal transduction, being capable of inhibiting the onset and/or advancement of the diseases.