Abstract: A GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure are provided wherein, stacked upon a GaAs single-crystal substrate are at least a buffer layer, a GaZIn1−ZAs (0<Z≦1) channel layer, and a GaYIn1−YP (0<Y≦1) electron-supply layer joined to the channel layer, wherein the GaInP epitaxial stacking structure includes a region within the electron-supply layer wherein the gallium composition ratio (Y) decreases from the side of the junction interface with the channel layer toward the opposite side.

Abstract: A Group-III nitride semiconductor light-emitting diode having an electrically conducting silicon (Si) single crystal substrate having on an upper surface thereof at least a light-emitting part having a pn-heterojunction structure composed of a Group-III nitride semiconductor, which light-emitting part is stacked via an intermediate layer composed of a metal or a semiconductor, the single crystal substrate having a back surface electrode on a back surface thereof, a surface electrode on an upper surface of the light-emitting part and a perforated part formed by eliminating the Si single crystal substrate in a region exclusive of the back surface electrode on the back surface of the single crystal substrate and a method of manufacturing thereof are disclosed.

Abstract: An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor.

Abstract: A GaInP stacked layer structure 1 having a GaAs single crystal substrate 10 having stacked on the surface thereof at least a buffer layer 11, an electron channel layer 12 composed of GaXIn1-XAs (0≦X≦1), a spacer layer 13 composed of GaInP and an electron supply layer 14 composed of GaInP is disclosed. The electron channel layer 12 contains a compositional gradient region imparted with a gradient by increasing the indium composition ratio (1-X) in the direction of the layer thickness increasing toward the junction interface 12b with the electron supply layer 14 side.

Abstract: An object of the present invention is to provide a high brightness n-side-up type AlGaInP light-emitting device with a simple structure. An n-type upper cladding layer is constructed by superimposing three n-type AlGaInP layers with different electron concentrations. The relationship between the electron concentrations of the three n-type AlGaInP layers is n3>n1>n2.

Abstract: The present invention solves the problem of conventional group-III nitride semiconductor LED in that, since the LED driving current is supplied only from a pad electrode serving also as an ohmic electrode, the driving current cannot diffuse over a wide range of the light-emitting region and a group-III nitride semiconductor LED having high light emission intensity cannot be successfully provided. A group-III nitride semiconductor LED having high light emission intensity, which is fabricated using a stacked layer structure obtained by providing a surface ohmic electrode, a window layer including an electrically conducting transparent oxide crystal layer and a pad electrode on an electrically conducting substrate through a boron phosphide (BP)-based buffer layer to allow the driving current to diffuse over a wide range of the light-emitting region is provided.

Abstract: A nitride semiconductor light emitting device which uses as a light emitting layer an indium-containing group-III nitride semiconductor layer of a multi-phase structure composed of a main phase and sub-phases having different indium contents is characterized in that the sub-phases are mainly formed of crystal whose boundary with the main phase is surrounded by a strained layer.

Abstract: A high emission intensity group-III nitride semiconductor light-emitting device obtained by eliminating crystal lattice mismatch with substrate crystal and using a gallium nitride phosphide-based light emitting structure having excellent crystallinity. A gallium nitride phosphide-based multilayer light-emitting structure is formed on a substrate via a boron phosphide (BP)-based buffer layer. The boron phosphide-based buffer layer is preferably grown at a low temperature and rendered amorphous so as to eliminate the lattice mismatch with the substrate crystal. After the amorphous buffer layer is formed, it is gradually converted into a crystalline layer to fabricate a light-emitting device while keeping the lattice match with the gallium nitride phosphide-based light-emitting part.

Abstract: An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor.

Abstract: The present invention provides an n-side-up type group III nitride semiconductor light-emitting device fabricated from an epitaxial wafer having group III nitride semiconductor crystal layers with different crystal structures, i.e., cubic and hexagonal systems. A buffer layer of a boron phosphide (BP) based material, a cubic p-type single crystal layer of a BP based material, a cubic p-type group III nitride semiconductor crystal layer, and a hexagonal n-type group III nitride semiconductor crystal layer are successively formed on a substrate of a p-type conduction Si single crystal. The temperatures for the formation of the above-mentioned buffer layer, cubic p-type group III nitride semiconductor crystal layer, and a hexagonal n-type group III nitride semiconductor crystal layer are desirably in preferred ranges.

Abstract: An object of the present invention is to reduce variance in the flow rates of source gasses and inconsistency in the mixing ratio of the source gasses when the flow paths of the source gasses are switched in a vent/run-type piping system of a vapor deposition apparatus. In a vapor deposition apparatus, a run line for mixing one or more sources with a carrier gas and for supplying the resultant gas to a vapor deposition region; a vent line for allowing the sources to detour away from the vapor deposition region and exhausting the sources; and a mechanism for switching the paths of the sources from the vapor deposition region to the vent line are provided. The paths of the sources are switched from the vent line to the vapor deposition region when the mixing ratio of the sources becomes consistent in the run line.

Abstract: An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor.

Abstract: A method of growing a group III nitride semiconductor crystal layer includes a step of growing a first buffer layer composed of boron phosphide on a silicon single crystal substrate by a vapor phase growth method at a temperature of not lower than 200° C. and not higher than 700° C., a step of growing a second buffer layer composed of boron phosphide on the first buffer layer by a vapor phase growth method at a temperature of not lower than 750° C. and not higher than 1200° C., and a step of growing a crystal layer composed of group III nitride semiconductor crystal represented by general formula AlpGaqInrN (where 0≦p≦1, 0≦q≦1, 0≦r≦1, p+q+r=1) on the second buffer layer by a vapor phase growth method. A semiconductor device incorporating the group III nitride semiconductor crystal layer is provided.

Abstract: Light-emitting device with excellent emission intensity is difficult to obtain when gallium indium nitride with high indium composition ratio and poor crystallinity is employed as active layer for group-III nitride light-emitting device to emit a comparatively long wavelength light. The invention provides a light-emitting layer on a super lattice structure as a base layer, and crystallinity of the light-emitting layer is then improved. Furthermore, abruptness of a crystal composition at an interface of the light-emitting layer and an upper junction layer is achieved, thus forming a bending portion of a band structure expedient for allowing the emitting-layer to emit a light with a long wavelength.

Abstract: A nitride semiconductor light emitting device which uses as a light emitting layer an indium-containing group-III nitride semiconductor layer of a multi-phase structure composed of a main phase and sub-phases having different indium contents is characterized in that the sub-phases are mainly formed of crystal whose boundary with the main phase is surrounded by a strained layer.

Abstract: A method of forming an epitaxial wafer for a light-emitting device by sequentially growing a lower cladding layer of Al.sub..alpha. Ga.sub..beta. N (0.ltoreq..alpha., .beta..ltoreq.1, .alpha.+.beta.=1), an AlGaInN active layer, and an upper cladding layer of Al.sub..alpha. Ga.sub..beta. N (0.ltoreq..alpha., .beta..ltoreq.1, .alpha.+.beta.=1) on a single-crystal substrate, wherein the AlGaInN active layer is formed by epitaxially growing an active layer of Al.sub.a Ga.sub.b In.sub.c N (wherein 0.ltoreq.a, b, c.ltoreq.1, a+b+c=1) on the lower cladding layer at a temperature of from 650.degree. C. to 950.degree. C., elevating the temperature of the active layer at a rate of not less than 30.degree. C./min until reaching a temperature range of from more than 950.degree. C. to not more than 1200.degree. C., and when the prescribed temperature is reached, primarily cooling the resultant layer to 950.degree. C. within 60 minutes at not less than 20.degree. C.

Abstract: A method of growing a group III nitride semiconductor crystal layer includes a step of growing a first buffer layer composed of boron phosphide on a silicon single crystal substrate by a vapor phase growth method at a temperature of not lower than 200.degree. C. and not higher than 700.degree. C., a step of growing a second buffer layer composed of boron phosphide on the first buffer layer by a vapor phase growth method at a temperature of not lower than 750.degree. C. and not higher than 1200.degree. C., and a step of growing a crystal layer composed of group III nitride semiconductor crystal represented by general formula Al.sub.p Ga.sub.q In.sub.r N (where 0.ltoreq.p.ltoreq.1, 0.ltoreq.q.ltoreq.1, 0.ltoreq.r.ltoreq.1, p+q+r=1) on the second buffer layer by a vapor phase growth method. A semiconductor device incorporating the group III nitride semiconductor crystal layer is provided.

Abstract: An epitaxial wafer for a light-emitting device has a double hetero-structure and includes a single-crystal substrate, a lower cladding layer of AlGaN grown on the substrate, an active layer grown on the lower cladding layer, the active layer having a two-phase structure comprised of a matrix of Al.sub.x Ga.sub.y In.sub.z N and crystallets of Al.sub.a Ga.sub.b In.sub.c N, and an upper cladding layer of AlGaN grown on the active layer.

Abstract: A process for coating a metallic substrate, characterized by applying on a metallic substrate a electrocoating paint, applying thereon a barrier coat comprising a film-forming thermoplastic resin other than a modified polyolefin resin and capable of forming a barrier coat film having a static glass transition temperature of 0.degree. to -75.degree. C., optionally applying on said barrier coat an intermediate coating paint and then applying thereon a top coating paint.

Abstract: A process for coating a metallic substrate, characterized by applying on a metallic substrate an electrocoating paint, applying thereon a barrier coat comprising a film-forming thermoplastic resin other than a modified polyolefin resin and capable of forming a barrier coat film having a static glass transition temperature of 0.degree. to -75.degree. C., optionally applying on said barrier coat an intermediate coating paint and then applying thereon a top coating paint.