Abstract: A GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure are provided wherein, stacked upon a GaAs single-crystal substrate are at least a buffer layer, a GaZIn1-ZAs (0<Z?1) channel layer, and a GaYIn1?YP (0<Y?1) electron-supply layer joined to the channel layer, wherein the GaInP epitaxial stacking structure includes a region within the electron-supply layer wherein the gallium composition ratio (Y) decreases from the side of the junction interface with the channel layer toward the opposite side.

Abstract: A stacked layer structure including a single crystal substrate; an amorphous or polycrystalline buffer layer formed from a boron-containing Group III-V compound semiconductor. The buffer layer is provided on the substrate; a cladding layer formed from a boron-containing Group III-V compound semiconductor is provided on the buffer layer; and a light-emitting layer having a quantum well structure including a barrier layer formed from a boron-containing Group III-V compound semiconductor and a well layer formed from a Group III nitride semiconductor is provided on the cladding layer. The barrier layer is formed from a boron-containing Group III-V compound semiconductor having the same lattice constant as a boron-containing Group III-V compound semiconductor constituting the cladding layer.

Abstract: A p-n junction-type compound semiconductor light-emitting device having a substrate formed of a single crystal, a first barrier layer provided on the substrate and formed of a compound semiconductor of a first conduction type, a light-emitting layer provided on the first barrier layer and formed of an indium (In)-containing group III nitride semiconductor of a first or a second conduction type, and an evaporation-preventing layer provided on the light-emitting layer for preventing the evaporation of indium from the light-emitting layer. The evaporation-preventing layer is formed of an undoped boron phosphide (BP)-base semiconductor of a second conduction type. A method for producing the semiconductor-light emitting device is also disclosed.

Abstract: A pn-junction-type semiconductor light-emitting device having a single-crystal silicon (Si) substrate of first conduction type; a first boron-phosphide-based semiconductor layer of first conduction type provided on the substrate; a light-emitting layer formed of a Group III-V semiconductor layer of first or second conduction type which is doped with an element belonging to Group IV of the periodic table provided on the first boron-phosphide-based semiconductor layer; and second boron-phosphide-based semiconductor layer of second conduction type formed of a boron-phosphide-based semiconductor layer of second conduction type containing a Group IV element provided on the light-emitting layer. The first boron-phosphide-based semiconductor layer, the light-emitting layer, and the second boron-phosphide-based semiconductor layer form a pn-junction-type hetero structure. In addition, the second conduction type is opposite the first conduction type. Also, disclosed is a method for producing the device.

Abstract: An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor.

Abstract: A boron phosphide-based semiconductor device includes a single crystal substrate having formed thereon a boron-phosphide (BP)-based semiconductor layer containing boron and phosphorus as constituent elements, where phosphorus (P) occupying the vacant lattice point (vacancy) of boron (B) and boron occupying the vacant lattice point (vacancy) of phosphorus are present in the boron-phosphide (BP)-based semiconductor layer. The boron phosphide-based semiconductor device includes a p-type boron phosphide-based semiconductor layer in which boron occupying the vacancy of phosphorus is contained in a higher atomic concentration than phosphorus occupying the vacancy of boron and a p-type impurity of Group II element or Group IV element is added.

Abstract: A boron-phosphide-based semiconductor light-emitting device having a semiconductor substrate of a first conduction type having, on its bottom surface, a bottom electrode; a first boron-phosphide-based semiconductor layer of a first conductive type provided on the substrate; a Group III-V compound semiconductor active layer provided on the first boron-phosphide-based semiconductor layer; a second boron-phosphide-based semiconductor layer of second conduction type provided on the active layer; and a top electrode provided on the surface of the second boron-phosphide-based semiconductor layer.

Abstract: An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor.

Abstract: A boron phosphide-based semiconductor device including a substrate having thereon an oxygen-containing boron phosphide-based semiconductor layer having boron and phosphorus as constituent elements and oxygen, and a production process therefor.

Abstract: The present invention provides a technique for fabricating a multicolor light-emitting lamp by using a blue LED having a structure capable of avoiding cumbersome bonding. In particular, the present invention provides a technique for fabricating a multicolor light-emitting lamp by using a hetero-junction type GaP-base LED capable of emitting high intensity green light in combination. Also, for example, in fabricating a multicolor light-emitting lamp from the blue LED and the yellow LED, the present invention provides a technique for fabricating a multicolor light-emitting lamp from a blue LED requiring no cumbersome bonding and a hetero-junction type GaAs1-ZPZ-base yellow LED of emitting light having high light emission intensity.

Abstract: An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor.

Abstract: A high emission intensity group-III nitride semiconductor light-emitting device obtained by eliminating crystal lattice mismatch with substrate crystal and using a gallium nitride phosphide-based light emitting structure having excellent crystallinity. A gallium nitride phosphide-based multilayer light-emitting structure is formed on a substrate via a boron phosphide (BP)-based buffer layer. The boron phosphide-based buffer layer is preferably grown at a low temperature and rendered amorphous so as to eliminate the lattice mismatch with the substrate crystal. After the amorphous buffer layer is formed, it is gradually converted into a crystalline layer to fabricate a light-emitting device while keeping the lattice match with the gallium nitride phosphide-based light-emitting part.

Abstract: A boron-phosphide-based semiconductor light-emitting device having a semiconductor substrate of a first conduction type having, on its bottom surface, a bottom electrode; a first boron-phosphide-based semiconductor layer of a first conductive type provided on the substrate; a Group III-V compound semiconductor active layer provided on the first boron-phosphide-based semiconductor layer; a second boron-phosphide-based semiconductor layer of second conduction type provided on the active layer; and a top electrode provided on the surface of the second boron-phosphide-based semiconductor layer.

Abstract: A semiconductor device having a silicon single crystal substrate and a boron phosphide semiconductor layer containing boron and phosphorus as constituent elements on a surface of the silicon single crystal substrate is disclosed. The surface of the silicon single crystal substrate is a {111} crystal plane inclined at an angle of 5.0° to 9.0° toward a <110> crystal azimuth.

Abstract: A boron phosphide-based semiconductor light-emitting device, which device includes a light-emitting member having a hetero-junction structure in which an n-type lower cladding layer formed of an n-type compound semiconductor, an n-type light-emitting layer formed of an n-type Group III nitride semiconductor, and a p-type upper cladding layer provided on the light-emitting layer and formed of a p-type boron phosphide-based semiconductor are sequentially provided on a surface of a conductive or high-resistive single-crystal substrate and which device includes a p-type Ohmic electrode provided so as to achieve contact with the p-type upper cladding layer, characterized in that a amorphous layer formed of boron phosphide-based semiconductor is disposed between the p-type upper cladding layer and the n-type light-emitting layer. This boron phosphide-based semiconductor light-emitting device exhibits a low forward voltage or threshold value and has excellent reverse breakdown voltage characteristics.

Abstract: A pn-junction type compound semiconductor light-emitting device having a substrate formed of a crystal, a first barrier layer provided on the substrate and formed of an undoped boron phosphide-base semiconductor of first conduction type, and a light-emitting layer of a first or a second conduction type provided on the first barrier layer including a plurality of superposed constituent layers formed of group III nitride semiconductors each having a different band gap. The constituent layer of the light-emitting layer provided closest to the first barrier layer is a first light-emitting constituent layer formed of a group III nitride semiconductor containing phosphorus (P). A method for producing the semiconductor light-emitting device is also disclosed.

Abstract: A high emission intensity group-III nitride semiconductor light-emitting device obtained by eliminating crystal lattice mismatch with substrate crystal and using a gallium nitride phosphide-based light emitting structure having excellent crystallinity. A gallium nitride phosphide-based multilayer light-emitting structure is formed on a substrate via a boron-phosphide (BP)-based buffer layer. The boron phosphide-based buffer layer is preferably grown at a low temperature and rendered amorphous so as to eliminate the lattice mismatch with the substrate crystal. After the amorphous buffer layer is formed, it is gradually converted into a crystalline layer to fabricate a light-emitting device while keeping the lattice match with the gallium nitride phosphide-based light-emitting part.

Abstract: A boron-phosphide-based semiconductor light-emitting device having a semiconductor substrate of a first conduction type having, on its bottom surface, a bottom electrode; a first boron-phosphide-based semiconductor layer of a first conductive type provided on the substrate; a Group III-V compound semiconductor active layer provided on the first boron-phosphide-based semiconductor layer; a second boron-phosphide-based semiconductor layer of second conduction type provided on the active layer; and a top electrode provided on the surface of the second boron-phosphide-based semiconductor layer.

Abstract: A semiconductor device having a silicon single crystal substrate and a boron phosphide semiconductor layer containing boron and phosphorus as constituent elements on a surface of the silicon single crystal substrate is disclosed. The surface of the silicon single crystal substrate is a {111} crystal plane inclined at an angle of 5.0° to 9.0° toward a <110> crystal azimuth.

Abstract: A Group-III nitride semiconductor device including a crystal substrate, an electrically conducting Group-III nitride semiconductor (AlXGaYIn1−(X+Y)N: 0≦X<1, 0<Y≦1 and 0<X+Y≦1) crystal layer vapor-phase grown on the crystal substrate, an ohmic electrode and an electrically conducting boron phosphide crystal layer provided between the ohmic electrode and the Group-III nitride semiconductor crystal layer, the ohmic electrode being disposed in contact with the boron phosphide crystal layer. Also disclosed is a method for producing the Group-III nitride semiconductor device, and a light-emitting diode including the Group-III nitride semiconductor device.