Abstract: A boron phosphide-based semiconductor light-emitting device includes a substrate of silicon single crystal, a first cubic boron phosphide-based semiconductor layer that is provided on a surface of the substrate and contains twins, a light-emitting layer that is composed of a hexagonal Group III nitride semiconductor and provided on the first cubic boron phosphide-based semiconductor layer and a second cubic boron phosphide-based semiconductor layer that is provided on the light-emitting layer, contains twins and has a conduction type different from that of the first cubic boron phosphide-based semiconductor layer.

Abstract: A Group III nitride semiconductor light-emitting device having a stacked structure includes a transparent crystal substrate having a front surface and a back surface, a first Group III nitride semiconductor layer of first conductive type formed on the front surface of the transparent crystal substrate, a second Group III nitride semiconductor layer of second conductive type which is opposite from the first conductive type, a light-emitting layer made of a Group III nitride semiconductor between the first and second Group III nitride semiconductor layers, and a plate body including fluorescent material, attached onto the back surface of the transparent crystal substrate.

Abstract: A compound semiconductor light-emitting diode comprising a light-emitting layer composed of a Group III-V compound semiconductor, and a current diffusion layer provided on the light-emitting layer and composed of a Group III-V compound semiconductor, characterized in that the current diffusion layer is composed of a conductive boron-phosphide-based semiconductor and has a bandgap at room temperature wider than that of the light-emitting layer.

Abstract: A pn-heterojunction compound semiconductor light-emitting device includes a crystalline substrate 101, a lower cladding layer 102 formed on a surface of the crystalline substrate and composed of an n-type Group III-V compound semiconductor, a light-emitting layer 103 formed on a surface of the lower cladding layer and composed of an n-type Group III-V compound semiconductor, an upper cladding layer 105 formed on a surface of the light-emitting layer and composed of p-type boron phosphide, an n-type electrode 106 attached to the lower cladding layer and a p-type electrode 107 attached to the upper cladding layer. The lower and upper cladding layers are opposed to each other and sandwich the light-emitting layer to form, in cooperation with the light-emitting layer, a light-emitting portion of a pn-heterojunction structure. The light-emitting device has an intermediate layer 104 composed of an n-type boron-containing Group III-V compound between the light-emitting layer and the upper cladding layer.

Abstract: The present invention provides a constitution of n-type ohmic electrode suitable for n-type group III nitride semiconductor, and a forming method thereof for providing low contact resistivity. The n-type ohmic electrode is provided to comprise an alloy of aluminum and lanthanum or comprises lanthanum at the junction interface with the n-type group III nitride semiconductor. The method comprising forming a lanthanum-aluminum alloy layer at 300° C. or less to form an n-type ohmic electrode enriched in lanthanum at the junction interface.

Abstract: A high emission intensity group-III nitride semiconductor light-emitting device obtained by eliminating crystal lattice mismatch with substrate crystal and using a gallium nitride phosphide-based light emitting structure having excellent crystallinity. A gallium nitride phosphide-based multilayer light-emitting structure is formed on a substrate via a boron-phosphide (BP)-based buffer layer. The boron phosphide-based buffer layer is preferably grown at a low temperature and rendered amorphous so as to eliminate the lattice mismatch with the substrate crystal. After the amorphous buffer layer is formed, it is gradually converted into a crystalline layer to fabricate a light-emitting device while keeping the lattice match with the gallium nitride phosphide-based light-emitting part.

Abstract: An Ohmic electrode structure comprising a p-conductivity-type boron phosphide-based semiconductor layer containing boron and phosphorus as constitutional elements and having a surface; and an electrode disposed on said surface of said semiconductor layer and having an Ohmic contact with said semiconductor layer, wherein at least a surface portion of said electrode which is in contact with said semiconductor layer is formed from a lanthanide element or a lanthanide element-containing alloy.

Abstract: A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a first region and a second region different from the first region; a boron phosphide-based semiconductor amorphous layer formed on said first region of said first semiconductor layer, said boron phosphide-based semiconductor amorphous layer including a high-resistance boron phosphide-based semiconductor amorphous layer or a first boron phosphide-based semiconductor amorphous layer having a conduction type opposite to that of said first semiconductor layer; a pad electrode formed on said high-resistance or opposite conductivity-type boron phosphide-based semiconductor amorphous layer for establishing wire bonding; and a conductive boron phosphide-based crystalline layer formed on said second region of said first semiconductor layer, said conductive b

Abstract: An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor.

Abstract: A boron phosphide-based semiconductor device having a junction structure of a Group-III nitride semiconductor layer and a boron phosphide layer with excellent device properties is provided. The boron phosphide-based compound semiconductor device has a heterojunction structure comprising a Group-III nitride semiconductor layer and a boron phosphide layer, wherein the surface of the Group-III nitride semiconductor layer has (0.0.0.1.) crystal plane, and the boron phosphide layer is a {111}-boron phosphide layer having a {111} crystal plane stacked on the (0.0.0.1.) crystal plane of the Group-III nitride semiconductor layer in parallel to the (0.0.0.1.) crystal plane.

Abstract: A Group-III nitride semiconductor device including a crystal substrate, an electrically conducting Group-III nitride semiconductor (AlXGaYIn1?(X+Y)N: 0?X<1, 0<Y?1 and 0<X+Y?1) crystal layer vapor-phase grown on the crystal substrate, an ohmic electrode and an electrically conducting boron phosphide crystal layer provided between the ohmic electrode and the Group-III nitride semiconductor crystal layer, the ohmic electrode being disposed in contact with the boron phosphide crystal layer. Also disclosed is a method for producing the Group-III nitride semiconductor device, and a light-emitting diode including the Group-III nitride semiconductor device.

Abstract: A semiconductor device having a silicon single crystal substrate and a boron phosphide semiconductor layer containing boron and phosphorus as constituent elements on a surface of the silicon single crystal substrate is disclosed. The surface of the silicon single crystal substrate is a {111} crystal plane inclined at an angle of 5.0° to 9.0° toward a <110> crystal azimuth.

Abstract: A boron phosphide-based semiconductor device includes a single crystal substrate having formed thereon a boron-phosphide (BP)-based semiconductor layer containing boron and phosphorus as constituent elements, where phosphorus (P) occupying the vacant lattice point (vacancy) of boron (B) and boron occupying the vacant lattice point (vacancy) of phosphorus are present in the boron-phosphide (BP)-based semiconductor layer. The boron phosphide-based semiconductor device includes a p-type boron phosphide-based semiconductor layer in which boron occupying the vacancy of phosphorus is contained in a higher atomic concentration than phosphorus occupying the vacancy of boron and a p-type impurity of Group II element or Group I V element is added.

Abstract: A boron phosphide-based compound semiconductor device with excellent device properties, comprising a boron phosphide-based compound semiconductor layer having a wide bandgap is provided. The boron phosphide-based compound semiconductor layer consists of an amorphous layer and a polycrystal layer provided to join with the amorphous layer, and the room-temperature bandgap of the boron phosphide-based compound semiconductor layer is from 3.0 eV to less than 4.2 eV.

Abstract: The present invention solves the problem of conventional group-III nitride semiconductor LED in that, since the LED driving current is supplied only from a pad electrode serving also as an ohmic electrode, the driving current cannot diffuse over a wide range of the light-emitting region and a group-III nitride semiconductor LED having high light emission intensity cannot be successfully provided. A group-III nitride semiconductor LED having high light emission intensity, which is fabricated using a stacked layer structure obtained by providing a surface ohmic electrode, a window layer including an electrically conducting transparent oxide crystal layer and a pad electrode on an electrically conducting substrate through a boron phosphide (BP)-based buffer layer to allow the driving current to diffuse over a wide range of the light-emitting region is provided.

Abstract: A boron phosphide-based semiconductor light-emitting device, which device includes a light-emitting member having a hetero-junction structure in which an n-type lower cladding layer formed of an n-type compound semiconductor, an n-type light-emitting layer formed of an n-type Group III nitride semiconductor, and a p-type upper cladding layer provided on the light-emitting layer and formed of a p-type boron phosphide-based semiconductor are sequentially provided on a surface of a conductive or high-resistive single-crystal substrate and which device includes a p-type Ohmic electrode provided so as to achieve contact with the p-type upper cladding layer, characterized in that a amorphous layer formed of boron phosphide-based semiconductor is disposed between the p-type upper cladding layer and the n-type light-emitting layer. This boron phosphide-based semiconductor light-emitting device exhibits a low forward voltage or threshold value and has excellent reverse breakdown voltage characteristics.

Abstract: A container used in an aerosol type spout unit is made usable as a container used in a reciprocating pump type spout unit. A reciprocating pump (30) is mounted on the mouth of a container (20). And an injection button (38) is depressed to push in the piston (35) of the reciprocating pump to increase the pressure in a pressure chamber (b), and the piston is pushed down with respect to a stem (37) to let the contents of the pressure chamber into the injection button through a spout passage (37a) and deliver them through a spout port (39a), while the operator removes his hand from the injection button, thus canceling the pushing-in of the pistion, and releasing the pressure in the pressure chamber to lower the pressure in the pressure chamber, the piston being pushed up to open an inlet valve (36), sucking up the contents of the container into the pressure chamber.

Abstract: A boron phosphide-based semiconductor device enhanced in properties includes a substrate (11) composed of a {111}-Si single crystal having a surface {111} crystal plane and a boron phosphide-based semiconductor layer formed on the surface of the substrate and composed of a polycrystal layer (12) that is an aggregate of a plurality of a triangular pyramidal single crystal entities (13) of the boron phosphide-based semiconductor crystal, where in each single crystal entity has a twining interface that forms an angle of 60° relative to a <110> crystal direction of the substrate.

Abstract: A compound semiconductor multilayer structure comprising a carbon-containing p-type gallium arsenide (GaAs)-system crystal layer, wherein the carbon-containing p-type GaAs-system crystal layer exhibits a predominant photoluminescence peak measured at 20K within a range of 828 nm to 845 nm, and wherein the ratio of hydrogen atom concentration to carbon atom concentration in the carbon-containing p-type GaAs crystal layer is 1/5 or less. Furthermore, in a photoluminescence measurement at 10K, the carbon-containing GaAs-system p-type crystal layer exhibits a first predominant photoluminescence peak and a second predominant photoluminescence peak due to band gap transitions of GaAs and wherein the second predominant luminescence wavelength has a longer wavelength than the first predominant photoluminescence wavelength and the intensity ratio of the second luminescence peak to the first luminescence peak is within a range from 0.5 to 3.

Abstract: A vapor-phase growth method for forming a boron-phosphide-based semiconductor layer on a single-crystal silicon (Si) substrate in a vapor-phase growth reactor. The method includes preliminary feeding of a boron (B)-containing gas, a phosphorus (P)-containing gas, and a carrier gas for carrying these gases into a vapor-phase growth reactor to thereby form a film containing boron and phosphorus on the inner wall of the vapor-phase growth reactor; and subsequently vapor-growing a boron-phosphide-based semiconductor layer on a single-crystal silicon substrate. Also disclosed is a boron-phosphide-based semiconductor layer prepared by the vapor-phase growth method.