Abstract: A variable-displacement compressor includes a wobble member for driving a pistons, and a rotation member for wobbling the wobbling member, a first support portion for supporting a wobbling member in such a manner that the angle of wobbling of the wobbling member is variable, and a second support portion for supporting said rotation member in such a manner that the angle of tilt of said rotation member relative to a main shaft is variable. With this construction, unbalanced inertia forces can be reduced greatly, thereby providing the variable-displacement compressor which produces less vibrations and noises.

Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

Abstract: A semiconductor chip module includes semiconductor chips each of which has contacts on its entire front face. A multi-layered organic circuit board having a small dielectric constant is provided for mounting the semiconductor chips. Intermediate ceramic substrates having the same thermal expansion coefficient as that of the semiconductor chip, are also provided. Each such intermediate ceramic substrate has contacts on its front and back faces corresponding to those of the semiconductor chip. These contacts are electrically connected directly in a one-to-one relationship. The contacts on the semiconductor chip and the corresponding ones on the front face of the intermediate ceramic substrates are connected by solder. The contacts on the back face of the intermediate ceramic substrate and the corresponding contacts on the front face of the multi-layered ceramic circuit board are connected by respective conductive pins having a predetermined flexibility and rigidity through a predetermined gap therebetween.

Abstract: Successive addresses of a character generator ROM, a buffer RAM and an empty area in an address space of a memory in a printer are sequentially searched upon energization of the printer. An identification code and a start address of each of a plurality of character sets stored in the character generator ROM, and start and end addresses of the buffer RAM are detected and stored for printer operation data. The character generator ROM and the buffer RAM can be expanded in the empty area.

Abstract: A polycrystalline silicon wafer having the step of flowing in a predetermined atmosphere molten liquid of silicon base material on a rotating fabrication tray toward a radial direction by means of a centrifugal force produced by the rotation of the tray, thereby forming a thin molten material layer of desired diameter with the molten liquid and solidifying the molten material, comprising a cover, at which a through hole is perforated at the ceiling wall thereof, detachably covered on the tray, a wafer-molding space formed to be surrounded by the cover and the tray, the molten material being filled in the wafer-molding space via the through hole to form a thin molten material layer. Thus, the wafers can be simultaneously formed without production of small projections of the surface of the wafers.

Abstract: A method for controlling printing impact in an impact type dot printer which controls printing impact energy to be increase in case of normal density imprint function and to be decreased in case of high density imprint function in the controlling means of the impact type dot printer in which the printing stylus strikes the printing paper so that the printing paper can be prevented from being damaged during the high density imprint function.

Abstract: A soft magnetic stainless steel consists essentially of, by weight, up to 0.03% of C, 0.40 to 1.10% of Si, up to 0.50% of Mn, 9.0 to 19.0% of Cr, 0.31 to 0.60% of Al, 0.01 to 0.03% of S, 0.10 to 0.30% of Pb, 0.02 to 0.25% of Ti, 0.02 to 0.10% of Zr, and up to 0.03% of N, and the balance of Fe and inevitable impurities, with a proviso that the C+N content is not more than 0.04% and the Si+Al content is not more than 1.35%. The steel has a magnetic flux density of 13,000 G or more and a coercive force of 1.2 Oe or less as magnetic properties, and a tensile strength of 41 kgf/mm.sup.2 or less and a critical compressibility of 50% or more as formability in cold forging. The steel is suitable for manufacturing, by cold forging, parts with complex shapes such as cores of solenoid operated valves and electromagnetic clutches, and bodies of electronic fuel injection apparatuses for internal combustion engines.

Abstract: A soft magnetic stainless steel consisting essentially of, by weight, up to 0.03% of C, 2.0 to 3.0% of Si, up to 0.40% of Mn, 0.015 to 0.050% of S, 10 to 13% of Cr, 0.05 to 0.20% of Ti, up to 0.03% of N, up to 0.010% of Al, and the balance of Fe and inevitable impurities, with a proviso that the C+N content is not more than 0.05%. The steel has a maximum permeability of not less than 4400 and a magnetic flux density of not less than 12,000 G as magnetic properties, together with a fatigue strength after welding of not lower than 120 kgf cm.sup.2, retains the magnetic properties even after annealing at a high temperature of 920.degree. C., and is excellent in electrical resistance, corrosion resistance, mechanical properties and machinability.

Abstract: A cutting tool of the ratchet operated type comprises several elements. A movable blade having a plurality of notches along the rear end thereof is moved relative to a stationary blade by an opening and closing operation of a pair of blades through a push bar which is in engagement with one of the notches. A pawl for preventing the return of the movable blade is elastically biased so as to be kept in a position disengaged from all of the notches under normal conditions. The pawl is brought into engagement with one of the notches by the push bar only when the pair of handles are fully closed relative to each other. Due to the above construction, the cutting tool according to the invention brings about reduced wear of the pawl and the notches and an easy cutting operation.

Abstract: A method of fabricating a polycrystalline silicon wafer, which method includes the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray. The wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold.

Abstract: A method of fabricating a polycrystalline silicon wafer, which method advantageously has the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray, and the wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold as the conventional method.

Abstract: A pipe gripping tool includes a body, a fixed jaw secured to the body and having a bite face, a movable jaw povoted to the body in opposition to the fixed jaw and having a plurality of cooperating bite faces for gripping a pipe in cooperation with the bite face on the fixed jaw and a return spring anchored at one end to the movable jaw and at the other end to the body. The plurality of bite faces on the movable jaw are positioned at different distances from the bite face on the fixed jaw.

Abstract: A method of producing foams by utilizing the reactivity of isocyanate groups comprising the steps of reacting an organic polyisocyanate in the presence of a foaming agent and, optionally, at least one member selected from the group consisting of polyols, polyepoxides, polycarboxylic acids, acid anhydrides and other compounds capable of reacting with the isocyanate groups and, if necessary, a catalyst, a foam stabilizer and other additives, the improvement wherein at least one organic amine-metal complex soluble in the liquid raw material and containing a metal selected from the group consisting of copper, nickel, lead, cobalt, manganese, zinc, and chromium is added to the reaction system in an amount of 0.5 to 30 weight % based on the total weight of the raw materials used for the preparation of foams. The foams containing flame-retardant organic amine-metal complexes prepared by the aforementioned method.

Abstract: A smoke-retardant polyisocyanurate foam which contains an organosilicate having hydroxypolyoxyalkylene group which is obtained by reacting a polyoxyalkyleneglycol with at least one of metallic silicon, halosilicon compounds and lower alkyl silicates.

Abstract: Method of making a semiconductor device which includes applying a solution of a heterocyclic ring-containing polymer in an organic solvent to a desired surface of a semiconductor body and removing the organic solvent from the solution by heat thereby to form a coating of a polymer on the surface, wherein the polymer is a reaction product of a diamine represented by the formula: ##STR1## with a tetracarboxylic acid or anhydride of it. Since the coating exhibits good thermal stability and good electrical properties when applied to the surface of the semiconductor, it is useful as a passivating film.

Abstract: There is disclosed a process for producing an isocyanate-based polymer by catalytically reacting a polyisocyanate alone or in combination with a polyhydroxy compound, the improvement in which an aromatic aldehyde having aldehyde group and no functional group capable of reacting with the isocyanate group, as a smoke suppressing agent is added to the reaction system.