Abstract: A control device for controlling an engine includes main-chamber injecting means (1,3) that supplies a main chamber (8) with fuel; sub-chamber injecting means (2) that supplies a sub chamber (5) with fuel after the main chamber injecting means (1,3) supplies the fuel; estimating means (21) that estimates a degree of knocking serving as indices of an intensity of the knocking and an occurrence frequency of the knocking; and fuel controlling means (22) that carries out, when the degree (N) of the knocking is a first predetermined value (N1) or more, fuel control that reduces a sub-chamber fuel amount representing an amount of fuel supplied by the sub-chamber injecting means (2). By reducing the sub-chamber fuel amount in this manner, the occurrence of knocking can be suppressed, so that the combustion state of a divided-combustion-chamber engine can be enhanced.

Abstract: There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed, a first utility system including a first supply system which supplies a first processing gas into the first process container and a surface of the first utility system is connected or arranged close to the first processing module; and a first vacuum pump arranged at the same level as a first exhaust port of the first process container. The first vacuum pump exhausts an inside of the first process container and includes a first intake port formed laterally at a position substantially facing the first exhaust port of the first process container. A first exhaust pipe configured to substantially linearly bring the first exhaust port into fluid communication with the first intake port and including a first valve installed in a flow path.

Abstract: Described herein is a technique capable of adjusting an inner pressure of a process chamber into a high vacuum state in a short time. According to one aspect of the technique, there is provided a substrate processing apparatus including: a pressure sensor; a first exhaust line including a first pipe and a first valve provided thereat; a second exhaust line including a second pipe and a second valve provided thereat; and a controller for adjusting an inner pressure of a process chamber by performing: (a) reducing the inner pressure, based on information from the pressure sensor, from an atmospheric pressure to a vacuum pressure by using the first exhaust line and the second exhaust line; and (b) adjusting either an opening degree of the first valve or the second valve by switching an exhaust path between the first exhaust line and the second exhaust line according to the process pressure.

Abstract: Described herein is a technique capable of adjusting an inner pressure of a process chamber into a high vacuum state in a short time. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a main exhaust line including a first pipe, a first opening degree adjusting valve, an opening/closing valve and a pressure sensor; a bypass exhaust line including a second pipe and a second opening degree adjusting valve; and a controller configured to adjust an inner pressure of the process chamber by: (a) adjusting an opening degree of the second opening degree adjusting valve; (b) closing the second opening degree adjusting valve and opening the opening/closing valve and the first opening degree adjusting valve; and (c) closing the opening/closing valve and the first opening degree adjusting valve and adjusting the opening degree of the second opening degree adjusting valve.

Abstract: A substrate processing apparatus includes: a process container; an exhaust path configured to branch into a first exhaust line and a second exhaust line; a first valve that is installed in the first exhaust line; a second valve that is installed in the second exhaust line; a pressure detector; and a pressure control device configured to be capable of: selecting one valve among the first valve and the second valve according to a pressure setting value in the process container, such that a pressure detection value detected by the pressure detector approaches the pressure setting value; setting an opening degree of an other valve, which is not selected among the first valve and the second valve, to a constant state; and adjusting an opening degree of the selected one valve while maintaining the opening degree of the selected one valve at a value greater than zero.

Abstract: A voltage application device includes a voltage application circuit. The voltage application circuit applies application voltage between discharge electrode and counter electrode which face each other with a clearance left from each other to generate a discharge. The voltage application device forms discharge path partially and dielectrically broken between discharge electrode and counter electrode when a discharge is generated. Discharge path includes first dielectric breakdown region formed around discharge electrode, and second dielectric breakdown region formed around counter electrode.

Abstract: A substrate processing apparatus, includes a reaction furnace, a preparatory chamber provided below the reaction furnace, an elevating mechanism configured to raise/lower a substrate holder between the reaction furnace and the preparatory chamber, a fluid circulation mechanism including a suction part for sucking a fluid within the preparatory chamber, a pipe part constituting a flow path through which the fluid flows from the suction part to a supply part, and a cooling mechanism, provided in the flow path, for cooling the fluid, and a control part for controlling the fluid circulation mechanism and the elevating mechanism to circulate the fluid sucked from the suction part through the flow path, and supply the fluid from the supply part to the preparatory chamber. The cooling mechanism is disposed adjacent to the suction part to cool the fluid introduced from the suction part before circulating the fluid through the flow path.

Abstract: A technique for reducing cooling time for a substrate includes a substrate processing apparatus that may include: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism to supply the gas into an upper region of the transfer chamber. The substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism to supply the gas into a lower region of the transfer chamber. The heat-insulating unit is provided such that the gas flows downward through the lower region. The first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

Abstract: A discharge device according to the present disclosure includes a discharge electrode and a voltage applicator that applies a voltage to the discharge electrode and thus causes discharge that is further developed from corona discharge at the discharge electrode. The discharge is discharge in which a discharge path is intermittently formed by dielectric breakdown so as to stretch from the discharge electrode to a surrounding. This discharge can be called leader discharge. This makes it possible to increase an amount of generated active component while keeping an increase of ozone small.

Abstract: There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed, a first utility system including a first supply system which supplies a first processing gas into the first process container and a surface of the first utility system is connected or arranged close to the first processing module; and a first vacuum pump arranged at the same level as a first exhaust port of the first process container. The first vacuum pump exhausts an inside of the first process container and includes a first intake port formed laterally at a position substantially facing the first exhaust port of the first process container. A first exhaust pipe configured to substantially linearly bring the first exhaust port into fluid communication with the first intake port and including a first valve installed in a flow path.

Abstract: A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

Abstract: Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.

Abstract: An electric discharge device according to the present disclosure includes a discharge electrode, a counter electrode, a voltage application circuit, and a liquid supply unit. The discharge electrode is a columnar electrode. The counter electrode faces the discharge electrode. The voltage application circuit applies an application voltage between the discharge electrode and the counter electrode. The liquid supply unit supplies liquid to the discharge electrode. The liquid extends and contracts along a central axis of the discharge electrode by discharge. The counter electrode includes a peripheral electrode part and a projecting electrode part. In a direction along the central axis of the discharge electrode, a tip of the liquid in a state in which the liquid extends is located at the same position as an outer peripheral edge of the peripheral electrode part or located closer to the discharge electrode than the outer peripheral edge.

Abstract: There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed and a substrate loading port installed at a front side of the first processing module; a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system is connected or arranged close to a rear surface of the first processing module; and a first vacuum-exhauster arranged behind the first processing module and configured to exhaust an inside of the first process container, wherein the first vacuum-exhauster includes an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.

Abstract: Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.

Abstract: There is provided a substrate processing apparatus including: a transfer region communicating with a process chamber where substrates are processed; a first shelf region installed above the transfer region and having a first shelf storing transfer vessels accommodating the substrates; a second shelf region installed below a stage part where the vessels to be transferred to and from an external device are loaded, and having a second shelf stacking and storing the transfer vessels; and a transfer vessel transfer robot installed inside a housing accommodating the transfer region, the first shelf region and the second shelf region and transferring the vessels to and from the stage part, the first shelf, the second shelf, and the transfer region. The transfer vessel transfer robot includes: a main body base part; a first table part; a first driving part; a second table part; a second driving part; and a vessel support part.

Abstract: Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.

Abstract: There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed and a substrate loading port installed at a front side of the first processing module; a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system is connected or arranged close to a rear surface of the first processing module; and a first vacuum-exhauster arranged behind the first processing module and configured to exhaust an inside of the first process container, wherein the first vacuum-exhauster includes an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.

Abstract: A substrate processing apparatus including a transfer chamber; upper gas supply mechanism that supplies a gas into an upper region of the transfer chamber through a first gas supply port; and lower gas supply mechanism that supplies the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber disposed at a back surface of the first gas supply port; a pair of upper ducts disposed at both sides of the first buffer chamber; and a first ventilation unit disposed at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber disposed at a back surface of the second gas supply port; a lower duct disposed at lower surface of the second buffer chamber; and a second ventilation unit disposed at a lower end of the lower duct.

Abstract: A voltage application device includes a voltage application circuit. The voltage application circuit applies application voltage between discharge electrode and counter electrode which face each other with a clearance left from each other to generate a discharge. The voltage application device forms discharge path partially and dielectrically broken between discharge electrode and counter electrode when a discharge is generated. Discharge path includes first dielectric breakdown region formed around discharge electrode, and second dielectric breakdown region formed around counter electrode.