Patents by Inventor Takayuki Nakada
Takayuki Nakada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210254211Abstract: A substrate processing apparatus including a transfer chamber; upper gas supply mechanism that supplies a gas into an upper region of the transfer chamber through a first gas supply port; and lower gas supply mechanism that supplies the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber disposed at a back surface of the first gas supply port; a pair of upper ducts disposed at both sides of the first buffer chamber; and a first ventilation unit disposed at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber disposed at a back surface of the second gas supply port; a lower duct disposed at lower surface of the second buffer chamber; and a second ventilation unit disposed at a lower end of the lower duct.Type: ApplicationFiled: May 6, 2021Publication date: August 19, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Takayuki NAKADA, Tomoshi TANIYAMA, Kenji SHIRAKO
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Publication number: 20210159083Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.Type: ApplicationFiled: February 3, 2021Publication date: May 27, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Hidenari YOSHIDA, Shigeru ODAKE, Tomoshi TANIYAMA, Takayuki NAKADA
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Patent number: 10950457Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.Type: GrantFiled: September 5, 2019Date of Patent: March 16, 2021Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hidenari Yoshida, Shigeru Odake, Tomoshi Taniyama, Takayuki Nakada
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Publication number: 20210040619Abstract: Described herein is a technique capable of adjusting an inner pressure of a process chamber into a high vacuum state in a short time. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a main exhaust line including a first pipe, a first opening degree adjusting valve, an opening/closing valve and a pressure sensor; a bypass exhaust line including a second pipe and a second opening degree adjusting valve; and a controller configured to adjust an inner pressure of the process chamber by: (a) adjusting an opening degree of the second opening degree adjusting valve; (b) closing the second opening degree adjusting valve and opening the opening/closing valve and the first opening degree adjusting valve; and (c) closing the opening/closing valve and the first opening degree adjusting valve and adjusting the opening degree of the second opening degree adjusting valve.Type: ApplicationFiled: August 5, 2020Publication date: February 11, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Masamichi YACHI, Takayuki NAKADA
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Patent number: 10811271Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.Type: GrantFiled: September 30, 2014Date of Patent: October 20, 2020Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hidenari Yoshida, Shigeru Odake, Tomoshi Taniyama, Takayuki Nakada
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Publication number: 20200240019Abstract: Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.Type: ApplicationFiled: April 8, 2020Publication date: July 30, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Hidenari YOSHIDA, Tomoshi TANIYAMA, Takayuki NAKADA
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Patent number: 10689758Abstract: Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.Type: GrantFiled: March 2, 2018Date of Patent: June 23, 2020Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hidenari Yoshida, Tomoshi Taniyama, Takayuki Nakada
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Publication number: 20200131631Abstract: A substrate processing apparatus including a transfer chamber; upper gas supply mechanism that supplies a gas into an upper region of the transfer chamber through a first gas supply port; and lower gas supply mechanism that supplies the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber disposed at a back surface of the first gas supply port; a pair of upper ducts disposed at both sides of the first buffer chamber; and a first ventilation unit disposed at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber disposed at a back surface of the second gas supply port; a lower duct disposed at lower surface of the second buffer chamber; and a second ventilation unit disposed at a lower end of the lower duct.Type: ApplicationFiled: December 30, 2019Publication date: April 30, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Takayuki NAKADA, Tomoshi TANIYAMA, Kenji SHIRAKO
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Patent number: 10615061Abstract: Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.Type: GrantFiled: August 3, 2016Date of Patent: April 7, 2020Assignee: Kokusai Electric CorporationInventors: Shuhei Saido, Hidenari Yoshida, Takatomo Yamaguchi, Takayuki Nakada, Tomoshi Taniyama
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Patent number: 10550468Abstract: A substrate processing apparatus includes a transfer chamber; an upper gas supply mechanism for supplying a gas into an upper region of the transfer chamber through a first gas supply port; and a lower gas supply mechanism configured to supply the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber at a back surface of the first gas supply port; a pair of upper ducts at both sides of the first buffer chamber; and a first ventilation unit at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber at a back surface of the second gas supply port; a lower duct at lower surface of the second buffer chamber; and a second ventilation unit at a lower end of the lower duct.Type: GrantFiled: February 1, 2017Date of Patent: February 4, 2020Assignee: Kokusai Electric CorporationInventors: Takayuki Nakada, Tomoshi Taniyama, Kenji Shirako
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Patent number: 10529605Abstract: There is provided a technique includes: a substrate holder including a heat insulating part and a substrate holding part disposed above the heat insulating part and holding substrates in multiple stages; a process chamber processing the substrates held by the substrate holding part; a transfer chamber adjacent to the process chamber and transferring the substrates to the substrate holding part; a transfer mechanism transferring the substrate holder; a first gas supply part installed on one side of the transfer chamber and supplying gas into the transfer chamber; a second gas supply part having gas outlets at a height position between the substrate held at a lowermost stage of the substrate holding part and the heat insulating part and supplying a gas toward the substrate holder; and a controller controlling the transfer mechanism, the first gas supply part and the second gas supply part.Type: GrantFiled: September 20, 2018Date of Patent: January 7, 2020Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Takayuki Nakada, Daigi Kamimura
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Publication number: 20190393045Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.Type: ApplicationFiled: September 5, 2019Publication date: December 26, 2019Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Hidenari YOSHIDA, Shigeru ODAKE, Tomoshi TANIYAMA, Takayuki NAKADA
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Publication number: 20190382892Abstract: A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.Type: ApplicationFiled: August 29, 2019Publication date: December 19, 2019Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Takayuki NAKADA, Takashi NOGAMI, Tomoshi TANIYAMA, Daigi KAMIMURA
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Patent number: 10508336Abstract: A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.Type: GrantFiled: June 26, 2017Date of Patent: December 17, 2019Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Takayuki Nakada, Takashi Nogami, Tomoshi Taniyama, Daigi Kamimura
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Publication number: 20190221453Abstract: There is provided a substrate processing apparatus including: a transfer region communicating with a process chamber where substrates are processed; a first shelf region installed above the transfer region and having a first shelf storing transfer vessels accommodating the substrates; a second shelf region installed below a stage part where the vessels to be transferred to and from an external device are loaded, and having a second shelf stacking and storing the transfer vessels; and a transfer vessel transfer robot installed inside a housing accommodating the transfer region, the first shelf region and the second shelf region and transferring the vessels to and from the stage part, the first shelf, the second shelf, and the transfer region. The transfer vessel transfer robot includes: a main body base part; a first table part; a first driving part; a second table part; a second driving part; and a vessel support part.Type: ApplicationFiled: January 15, 2019Publication date: July 18, 2019Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Takeshi ITO, Takayuki NAKADA
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Publication number: 20190035654Abstract: Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.Type: ApplicationFiled: September 21, 2018Publication date: January 31, 2019Inventors: Shuhei SAIDO, Hidenari YOSHIDA, Takatomo YAMAGUCHI, Takayuki NAKADA, Tomoshi TANIYAMA
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Publication number: 20190019705Abstract: There is provided a technique includes: a substrate holder including a heat insulating part and a substrate holding part disposed above the heat insulating part and holding substrates in multiple stages; a process chamber processing the substrates held by the substrate holding part; a transfer chamber adjacent to the process chamber and transferring the substrates to the substrate holding part; a transfer mechanism transferring the substrate holder; a first gas supply part installed on one side of the transfer chamber and supplying gas into the transfer chamber; a second gas supply part having gas outlets at a height position between the substrate held at a lowermost stage of the substrate holding part and the heat insulating part and supplying a gas toward the substrate holder; and a controller controlling the transfer mechanism, the first gas supply part and the second gas supply part.Type: ApplicationFiled: September 20, 2018Publication date: January 17, 2019Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Takayuki NAKADA, Daigi KAMIMURA
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Patent number: 10099232Abstract: An electrostatic atomizing device of the present disclosure includes a discharge electrode, a counter electrode, a liquid supplying unit, a current path, a voltage applicator, and a limiting resistor. The limiting resistor is disposed on a first current path or a second current path included in the current path. The first current path electrically connects the voltage applicator and the counter electrode, and the second current path electrically connects the voltage applicator and the discharge electrode. This makes it possible to increase an amount of generated radicals while keeping an increase of ozone small. In addition, an electric current peak of an instantaneous electric current can be kept small.Type: GrantFiled: July 21, 2017Date of Patent: October 16, 2018Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Tetsunori Aono, Tomohiro Yamaguchi, Takafumi Omori, Osamu Imahori, Takayuki Nakada, Youhei Ishigami
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Publication number: 20180218927Abstract: Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.Type: ApplicationFiled: March 22, 2018Publication date: August 2, 2018Inventors: Shuhei SAIDO, Hidenari YOSHIDA, Takatomo YAMAGUCHI, Takayuki NAKADA, Tomoshi TANIYAMA
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Patent number: D925480Type: GrantFiled: January 23, 2019Date of Patent: July 20, 2021Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Jumpei Oe, Youhei Ishigami, Kana Shimizu, Takafumi Omori, Tetsunori Aono, Takayuki Nakada