Abstract: Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.

Abstract: A substrate processing apparatus, includes a reaction furnace, a preparatory chamber provided below the reaction furnace, an elevating mechanism configured to raise/lower a substrate holder between the reaction furnace and the preparatory chamber, a fluid circulation mechanism including a suction part for sucking a fluid within the preparatory chamber, a pipe part constituting a flow path through which the fluid flows from the suction part to a supply part, and a cooling mechanism, provided in the flow path, for cooling the fluid, and a control part for controlling the fluid circulation mechanism and the elevating mechanism to circulate the fluid sucked from the suction part through the flow path, and supply the fluid from the supply part to the preparatory chamber. The cooling mechanism is disposed adjacent to the suction part to cool the fluid introduced from the suction part before circulating the fluid through the flow path.

Abstract: A discharge device according to the present disclosure includes a discharge electrode and a voltage applicator that applies a voltage to the discharge electrode and thus causes discharge that is further developed from corona discharge at the discharge electrode. The discharge is discharge in which a discharge path is intermittently formed by dielectric breakdown so as to stretch from the discharge electrode to a surrounding. This discharge can be called leader discharge. This makes it possible to increase an amount of generated active component while keeping an increase of ozone small.

Abstract: An electrostatic atomizing device of the present disclosure includes a discharge electrode, a counter electrode, a liquid supplying unit, a current path, a voltage applicator, and a limiting resistor. The limiting resistor is disposed on a first current path or a second current path included in the current path. The first current path electrically connects the voltage applicator and the counter electrode, and the second current path electrically connects the voltage applicator and the discharge electrode. This makes it possible to increase an amount of generated radicals while keeping an increase of ozone small. In addition, an electric current peak of an instantaneous electric current can be kept small.

Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.

Abstract: A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

Abstract: A substrate processing apparatus includes a transfer chamber; an upper gas supply mechanism for supplying a gas into an upper region of the transfer chamber through a first gas supply port; and a lower gas supply mechanism configured to supply the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber at a back surface of the first gas supply port; a pair of upper ducts at both sides of the first buffer chamber; and a first ventilation unit at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber at a back surface of the second gas supply port; a lower duct at lower surface of the second buffer chamber; and a second ventilation unit at a lower end of the lower duct.

Abstract: Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.

Abstract: A substrate processing apparatus comprises a processing chamber for processing a substrate, a substrate supporting tool for supporting and carrying the substrate into the processing chamber, a standby chamber formed below the processing chamber for holding the substrate supporting tool in standby, a gas supply unit provided on the side of the standby chamber for supplying inert gas or gas containing oxygen into the standby chamber, a gas exhaust unit provided on the side of the standby chamber and opposite to the gas supply unit, for exhausting the inert gas or gas containing oxygen from the standby chamber, a first gas exhaust path connected to the gas exhaust unit for exhausting the inert gas or gas containing oxygen within the gas exhaust unit, a second gas exhaust path connected to the side of the gas exhaust unit for exhausting the gas containing oxygen within the exhaust gas unit, and a gate valve for opening and closing the second gas exhaust path.

Abstract: An electrostatic atomization device that prevents the cooling capability from being lowered due to contact of an atomization electrode with another ember, while effectively preventing surplus production of condensed water that would destabilize discharging at the distal end of the atomization electrode. the electrostatic atomization device includes an atomization electrode having a cylindrical electrode body and a base which is informed at a basal end of the electrode body and has a larger diameter than the electrode from the base to produce condensed water on the atomization electrode. Voltage is applied to the atomization electrode when the condensed water is produced to generate charged fine water droplets. A partition plate includes an insertion hole that receives the electrode body of the atomization electrode. The partition plate and the base of the atomization electrode form a water collection region in between.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a non-metallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold includes a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube.

Abstract: An electrostatic atomization device (A) for increasing hydrophilicity of collected matter (15) that has low hydrophilicity and is attached to a surface of a processing subject (1). The device includes an atomization electrode (6), which generates electrostatically charged atomized water droplets to increase the hydrophilicity, a water supply member (8), which supplies water to the atomization electrode (6), and a voltage application member (9), which applies voltage to the water supplied to the atomization electrode (6).

Abstract: Metal corrosion and substrate contamination can be suppressed, and process quality and yield can be improved. A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft; a second gas ejection port formed at the substrate holder stage; a second gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and second gas stagnant parts.

Abstract: A substrate processing apparatus includes a reaction tube, the reaction tub including an inner tube made of quartz and an outer tube made of quartz; a manifold made of quartz disposed under the outer tube, a top surface of the manifold being in air-tight contact with a bottom surface of the outer tube via a sealing member; a seal cap cover made of quartz disposed under the manifold, a top surface of the seal cap cover being in air-tight contact with a bottom surface of the manifold via a sealing member; a seal cap covered by the seal cap cover, a top surface of the seal cap being in air-tight contact with a bottom surface of the seal cap cover via a sealing member; and at least one protrusion disposed at the bottom surface of one of the outer tube, the manifold, the seal cap cover, and combinations thereof.

Abstract: A discharge electrode includes a surface layer to which a surface treatment that enables solder bonding is applied.

Abstract: An electrostatic atomization device comprises: an electric discharge electrode having a front end section and a base end section; a cooling section for cooling the electric discharge electrode; a high-voltage application section for generating electrically charged water particles by atomizing condensed water, which is held by the electric discharge electrode, by causing the front end section of the electric discharge electrode to discharge electricity; and a heat capacity adjustment member provided to the vicinity of the base end section of the electric discharge electrode and capable of heat transfer with the electric discharge electrode through the condensed water held by the electric discharge electrode.

Abstract: The atomizing electrode of the electrostatic atomizing device has a discharging part and a base. A portion of the atomizing electrode between the discharging part and the base is a large diameter part with a diameter larger than the base. The large diameter part separates condensed water retained near the base from condensed water retained on the discharging part.

Abstract: An electrostatically atomizing device includes an emitter electrode, an opposed electrode disposed in an opposed relation to the emitter electrode, liquid supply means for supplying a liquid to the emitter electrode, and high voltage generating means for applying a high voltage across the emitter electrode and the opposed electrode. The liquid supplied onto the emitter electrode is electrostatically charged through application of the high voltage, as a result of which charged minute liquid particles are discharged from a discharge end of the emitter electrode. The device includes detecting means for detecting a discharge condition developed between the emitter electrode and the opposed electrode, and a controller for controlling the high voltage generating means to regulate its voltage output so as to maintain a predetermined discharge condition, based on detection results by the detecting means.