Abstract: A plating apparatus 1 can perform plating processes by supplying plating liquids onto a surface of a substrate 2. The plating apparatus 1 includes a substrate rotating holder configured to hold and rotate the substrate 2; plating liquid supply units 29 and 30 configured to supply different kinds of plating liquids onto the surface of the substrate 2; a plating liquid drain unit 31 configured to drain out the plating liquids dispersed from the substrate 2 depending on the kinds of the plating liquids; and a controller 32 configured to control the substrate rotating holder 25, the plating liquid supply units 29 and 30, the plating liquid drain unit 31. While the substrate 2 is held and rotated, the plating processes are performed on the surface of the substrate 2 in sequence by supplying the different kinds of the plating liquids onto the surface of the substrate 2.

Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.

Abstract: A supercritical drying method for a semiconductor substrate is disclosed. The method may include introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method may also include performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Abstract: A plating apparatus includes a substrate holding/rotating device that holds/rotates a substrate; and a plating liquid supplying device that supplies a plating liquid onto the substrate. The plating liquid supplying device includes a supply tank that stores the plating liquid; a discharge nozzle that discharges the plating liquid onto the substrate; and a plating liquid supplying line through which the plating liquid of the supply tank is supplied into the discharge nozzle. Further, a first heating device is provided at either one of the supply tank and the plating liquid supplying line of the plating liquid supplying device, and heats the plating liquid to a first temperature. Furthermore, a second heating device is provided at the plating liquid supplying line between the first heating device and the discharge nozzle, and heats the plating liquid to a second temperature equal to or higher than the first temperature.

Abstract: Disclosed is a substrate processing method. The method includes: supplying a rinse liquid, IPA, a first fluorine-containing organic solvent, a second fluorine-containing organic solvent to a wafer within an outer chamber of a liquid processing unit; conveying the wafer to a supercritical processing unit container; and supplying a supercritical processing fluorine-containing organic solvent in a supercritical high-pressure fluid state to the wafer within the supercritical processing unit container. At least during the supply of the IPA, a low-humidity N2 gas is supplied into the outer chamber so that the inside of the outer chamber is formed as a low-humidity N2 gas atmosphere, and thus moisture absorption into the IPA is prevented.

Abstract: Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.

Abstract: Disclosed is a separation and regeneration apparatus including: a mixed drainage liquid tank (mixed liquid generating unit) configured to generate a mixed liquid which includes a low-specific-gravity liquid insoluble in a fluorine-containing organic solvent, a first fluorine-containing organic solvent having a first boiling point, and a second fluorine-containing organic solvent having a second boiling point higher than the first boiling point; a distillation tank configured to separate the first fluorine-containing organic solvent and the second fluorine-containing organic solvent in the mixed liquid into the first fluorine-containing organic solvent in a gas state and the second fluorine-containing organic solvent in a liquid state; a first tank configured to liquefy and store the first fluorine-containing organic solvent from the distillation tank; and a second tank configured to store the second fluorine-containing organic solvent from the distillation tank.

Abstract: Disclosed is a separation and regeneration apparatus which includes a buffer tank configured to generate a mixed liquid which includes a first fluorine-containing organic solvent having a first boiling point, and a second fluorine-containing organic solvent having a second boiling point higher than the first boiling point; a distillation tank configured to heat the mixed liquid up to a temperature between the first boiling point and the second boiling point so as to separate the mixed liquid into the first fluorine-containing organic solvent in a gas state and the second fluorine-containing organic solvent in a liquid state; a first tank configured to liquefy and store the first fluorine-containing organic solvent in the gas state which is sent from the distillation tank; and a second tank configured to store the second fluorine-containing organic solvent in the liquid state which is sent from the distillation tank.

Abstract: Disclosed is a separation and regeneration apparatus including: a supercritical processing unit configured to generate a mixed gas including a first fluorine-containing organic solvent having a first boiling point and a second fluorine-containing organic solvent having a second boiling point lower than the first boiling point; and a distillation tank configured to store hot water having a temperature between the first boiling point and the second boiling point, in which the mixed gas is input into the hot water to be separated into the first fluorine-containing organic solvent in a liquid state and the second fluorine-containing organic solvent in a gas state, in which an introduction line configured to guide the mixed gas from the supercritical processing unit to the distillation tank is provided and a distal end of the introduction line is disposed in the hot water.

Abstract: Disclosed is a supercritical processing apparatus which can suppress the occurrence of pattern collapse, improve the throughput, and prolong a maintenance interval. In the disclosed supercritical processing apparatus to remove a liquid remained on a substrate by a super-critical state processing fluid, a heating unit heats the processing fluid to place the processing fluid into a processing receptacle in a supercritical state, and a cooling mechanism forcibly cools an area capable of transferring the heat to the substrate from the heating unit in order to suppress the liquid from being evaporated from the substrate until the substrate is disposed on a seating unit.

Abstract: A substrate processing method of performing a predetermined processing by supplying a processing liquid to a processing region on a surface of a substrate, includes: supplying an alignment liquid to an alignment region on the surface of the substrate formed at a position different from that of the processing region; aligning a template disposed facing the substrate and including a processing liquid passage configured to pass the processing liquid and an alignment liquid passage configured to pass the alignment liquid, with respect to the substrate with the alignment liquid supplied to the alignment region such that the processing liquid passage is positioned above the processing region; and performing the predetermined processing on the substrate by supplying the processing liquid to the processing region through the processing liquid passage.

Abstract: A plating apparatus 1 can perform plating processes by supplying plating liquids onto a surface of a substrate 2. The plating apparatus 1 includes a substrate rotating holder configured to hold and rotate the substrate 2; plating liquid supply units 29 and 30 configured to supply different kinds of plating liquids onto the surface of the substrate 2; a plating liquid drain unit 31 configured to drain out the plating liquids dispersed from the substrate 2 depending on the kinds of the plating liquids; and a controller 32 configured to control the substrate rotating holder 25, the plating liquid supply units 29 and 30, the plating liquid drain unit 31. While the substrate 2 is held and rotated, the plating processes are performed on the surface of the substrate 2 in sequence by supplying the different kinds of the plating liquids onto the surface of the substrate 2.

Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Abstract: A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.

Abstract: In the present disclosure, the high-pressure chamber includes a chamber main body including a flat rectangular parallelepiped block of a metal which is formed with a flat cavity that serves as a substrate processing space in which a processing using a high-pressure fluid is performed on a substrate, and the substrate processing space being formed by machining the block from one of faces of the block other than the widest face towards another face opposing thereto. In a case where the cavity is constituted as a through hole, the though hole is provided with a cover configured to open or close the cavity on one side of the through hole, and a second block configured to air-tightly seal the cavity on the other side.

Abstract: A fluid heater includes a duct pipe through which a fluid to be heated flows, and a heating part configured to heat the duct pipe. One or more fillers is provided inside the duct pipe. A substrate processing apparatus includes: a supply source configured to supply a liquid of a volatile organic solvent; the aforementioned fluid heater configured to heat the liquid of the organic solvent supplied by the supply source so as to generate a steam of the organic solvent; and a chamber configured to accommodate a substrate W and to dry the substrate W accommodated therein, to which the steam of the organic solvent generated by the fluid heater is supplied.

Abstract: A plurality of process liquid supply nozzles 10 are arranged at different levels on right and left sides of a semiconductor wafer W in a process bath 1. A discharge port of each of the nozzles 10 is directed toward the semiconductor wafer W. In accordance with a predetermined procedure, a process liquid is discharged from one or more nozzles 10 selected from the plurality of nozzles 10. In order to perform a chemical liquid treatment, a chemical liquid is discharged from the lowermost nozzle 10, for example, and thereafter, the nozzles 10 on the upper levels sequentially discharge the chemical liquid. In order to perform a rinse liquid treatment by replacing the chemical liquid in the process bath 1 with a rinse liquid, the rinse liquid is discharged from the lowermost nozzle 10 at first, for example. Thereafter, the rinse liquid is discharged from all the nozzles 10. In this manner, efficiency and uniformity in the liquid treatment can be improved.

Abstract: A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container.

Abstract: A liquid processing apparatus processes an object to be processed W including a body part Wi and a plurality of projecting-shape parts Wm disposed on the body part Wi, with an inorganic film and a different film being laminated to each other. The liquid processing apparatus comprises: a support part 50 configured to support the body part Wi; a hydrophobic-liquid supply mechanism 30 configured to supply a hydrophobic liquid to the object to be processed W; and a rinse-liquid supply part 22 configured to supply a rinse liquid to the object to be processed W to which the hydrophobic liquid has been supplied. The hydrophobic-liquid supply mechanism 30 includes: a first hydrophobic-liquid supply part 32 configured to supply a first hydrophobic liquid for making hydrophobic the inorganic film; and a second hydrophobic-liquid supply part 37 configured to supply a second hydrophobic liquid for making hydrophobic the different film.