Abstract: A fluid heater 20 includes a duct pipe 26 through which a fluid to be heated flows, and a heating part 23 configured to heat the duct pipe 26. One or more fillers 30 is provided inside the duct pipe 26. A substrate processing apparatus 60 includes: a supply source 92 configured to supply a liquid of a volatile organic solvent; the aforementioned fluid heater 20 configured to heat the liquid of the organic solvent supplied by the supply source 92 so as to generate a steam of the organic solvent; and a chamber 65 configured to accommodate a substrate W and to dry the substrate W accommodated therein, to which the steam of the organic solvent generated by the fluid heater 20 is supplied.

Abstract: A substrate processing system 1 comprises: a processing tank 3 for processing substrates W with a processing liquid; a drying unit 6 disposed above the processing tank 3; and a carrying mechanism 8 for carrying the substrates W between the processing tank 3 and the drying unit 6. A processing gas supply line 21 for supplying a processing gas into the drying unit 6 and inert gas supply lines 24 and 25 for supplying an inert gas into the drying unit 6 are connected to the drying unit 6. A first discharge line for discharging an atmosphere purged from the drying unit 6 and a second discharge line 27 for forcibly exhausting the drying unit 6 are connected to the drying unit 6.

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of processing of a substrate using a supercritical fluid without exposing the pattern formed on the substrate to an atmospheric environment. The substrate processing apparatus includes a cleaning bath configured to accommodate a substrate and clean the substrate by flowing a cleaning solution, and a processing vessel configured to accommodate the cleaning bath and process the substrate with a supercritical fluid.

Abstract: Disclosed is a supercritical processing apparatus which can suppress the occurrence of pattern collapse, improve the throughput, and prolong a maintenance interval. In the disclosed supercritical processing apparatus to remove a liquid remained on a substrate by a super-critical state processing fluid, a heating unit heats the processing fluid to place the processing fluid into a processing receptacle in a supercritical state, and a cooling mechanism forcibly cools an area capable of transferring the heat to the substrate from the heating unit in order to suppress the liquid from being evaporated from the substrate until the substrate is disposed on a seating unit.

Abstract: A liquid processing apparatus processes an object to be processed W including a body part Wi and a plurality of projecting-shape parts Wm disposed on the body part Wi, with an inorganic film and a different film being laminated to each other. The liquid processing apparatus comprises: a support part 50 configured to support the body part Wi; a hydrophobic-liquid supply mechanism 30 configured to supply a hydrophobic liquid to the object to be processed W; and a rinse-liquid supply part 22 configured to supply a rinse liquid to the object to be processed W to which the hydrophobic liquid has been supplied. The hydrophobic-liquid supply mechanism 30 includes: a first hydrophobic-liquid supply part 32 configured to supply a first hydrophobic liquid for making hydrophobic the inorganic film; and a second hydrophobic-liquid supply part 37 configured to supply a second hydrophobic liquid for making hydrophobic the different film.

Abstract: A liquid processing system includes a liquid processing section including liquid processing units horizontally disposed therein and each configured to perform a liquid process while supplying a process liquid onto a substrate; a process liquid storing section that stores the process liquid to be supplied to the liquid processing units of the liquid processing section; and a piping unit including a supply pipe configured to guide the process liquid from the process liquid storing section to the liquid processing units. The process liquid storing section, the piping unit, and the liquid processing section are disposed inside a common casing in this order from below. The supply pipe of the piping unit has a horizontal pipe portion horizontally extending along an array direction of the liquid processing units, such that the process liquid is supplied from the horizontal pipe portion to the liquid processing units individually.

Abstract: A substrate processing system 1 comprises: a processing tank 3 for processing substrates W with a processing liquid; a drying unit 6 disposed above the processing tank 3; and a carrying mechanism 8 for carrying the substrates W between the processing tank 3 and the drying unit 6. A processing gas supply line 21 for supplying a processing gas into the drying unit 6 and inert gas supply lines 24 and 25 for supplying an inert gas into the drying unit 6 are connected to the drying unit 6. A first discharge line for discharging an atmosphere purged from the drying unit 6 and a second discharge line 27 for forcibly exhausting the drying unit 6 are connected to the drying unit 6.

Abstract: A liquid processing apparatus includes: a substrate holding member configured to rotate along with a substrate held thereon in a horizontal state; a rotary cup configured to surround the substrate held on the substrate holding member and to rotate along with the substrate; a rotation mechanism configured to integratedly rotate the rotary cup and the substrate holding member; a liquid supply mechanism configured to supply a process liquid onto the substrate; and an exhaust/drain section configured to perform gas-exhausting and liquid-draining of the rotary cup. The exhaust/drain section includes an annular drain cup configured to mainly collect and discharge a process liquid thrown off from the substrate, and an exhaust cup surrounding the drain cup and configured to mainly collect and discharge a gas component from inside and around the rotary cup. Liquid-draining from the drain cup and gas-exhausting from the exhaust cup are performed independently of each other.

Abstract: There is provided a substrate processing method with the use of plural kinds of liquids, capable of, after a process to a substrate by using a process liquid, rapidly and more reliably substituting the process liquid remaining on the substrate with a liquid to be subsequently used. The substrate processing method comprises: processing a substrate W by a process liquid; and supplying a substitute liquid onto the substrate and substituting the process liquid remaining on the substrate with the substitute liquid. The substitute liquid used in the substituting step has a surface tension that is smaller than a surface tension of the water, and a density that is equal to a density of the process liquid.

Abstract: Disclosed is a substrate carrying apparatus having a simple configuration capable of inhibiting the occurrence of pattern collapse. A carrying tray of the disclosed substrate carrying apparatus includes a bottom plate for supporting the substrate and a circumferential side wall being provided around the bottom plate. An opening is formed in the bottom plate. An elevating member, to and from which the substrate is to be transferred, passes through the opening. A space is temporarily formed in a carrying tray. The elevating member within the opening passes to the outside of the carrying tray through the space. When the substrate is carried, the liquid is reservoired within the carrying tray, and the substrate is carried while the liquid remained on the upper surface of the substrate.

Abstract: A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.

Abstract: A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate.

Abstract: A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.

Abstract: A plurality of process liquid supply nozzles 10 are arranged at different levels on right and left sides of a semiconductor wafer W in a process bath 1. A discharge port of each of the nozzles 10 is directed toward the semiconductor wafer W. In accordance with a predetermined procedure, a process liquid is discharged from one or more nozzles 10 selected from the plurality of nozzles 10. In order to perform a chemical liquid treatment, a chemical liquid is discharged from the lowermost nozzle 10, for example, and thereafter, the nozzles 10 on the upper levels sequentially discharge the chemical liquid. In order to perform a rinse liquid treatment by replacing the chemical liquid in the process bath 1 with a rinse liquid, the rinse liquid is discharged from the lowermost nozzle 10 at first, for example. Thereafter, the rinse liquid is discharged from all the nozzles 10. In this manner, efficiency and uniformity in the liquid treatment can be improved.

Abstract: The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow.

Abstract: Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.

Abstract: A substrate processing method includes: performing an etching process to form a predetermined pattern on an etching-target film disposed on a substrate; denaturing a substance remaining after the etching process to be soluble in a predetermined liquid; then, performing a silylation process on a surface of the etching-target film having the pattern formed thereon; and then, supplying the predetermined liquid to dissolve and remove the denatured substance.

Abstract: A substrate processing apparatus includes a substrate processing part 46 for processing a substrate by a processing liquid and a processing-liquid recovery path 137 allowing of a passage of the processing liquid discharged from the substrate processing part 46. The processing-liquid recovery path 137 is provided with foreign substance removal lines 181, 182 including filters 200, 201 for removing an foreign substance from the processing liquid and cleaners 201, 211 for cleaning the filters 200, 201 respectively. With this constitution, it is possible to cancel the blocking of foreign substances in pipes etc. and also possible to lengthen the life span of the filters.

Abstract: Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. A substrate processing method comprises feeding a processing gas, such as ozone gas, into a processing vessel to pressurize an atmosphere surrounding a substrate. A solvent gas, such as steam, is fed into the processing vessel while the processing gas is fed into the processing vessel, whereby a resist of the substrate can be removed with the solvent gas and the processing gas while metal corrosion, etc. can be prevented.

Abstract: A substrate cleaning apparatus (1) of the present invention is the substrate cleaning apparatus (1) for cleaning a substrate (wafer 7) with the use of a cleaning agent (e.g., Caro's acid) that is generated by reacting plural kinds of chemical liquids (e.g., sulfuric acid and hydrogen peroxide solution). The substrate cleaning apparatus (1) comprises: a mixing unit (31) for mixing plural kinds of chemical liquids, a supplying unit (32) for supplying the chemical liquids that have been mixed by the mixing unit, onto a surface of a substrate to be cleaned; and a heating unit (14) for heating the chemical liquids that have been supplied onto the surface of the substrate by the supplying unit, on the surface of the substrate. In particular, the mixing unit (31) includes a reaction restraining mechanism (33) for restraining a reaction of the mixed chemical liquids, and the reaction restraining mechanism (33) is on a cooling mechanism for cooling the mixed chemical liquids.