Abstract: A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening and includes a piezoelectric element including a piezoelectric layer and electrodes. The piezoelectric layer contains bismuth sodium potassium titanate and satisfies the inequality 0?Pr/Pm?0.25 at 25° C., where Pm and Pr are the saturation polarization and remanent polarization, respectively, of the piezoelectric layer.

Abstract: A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening and includes a piezoelectric element including a piezoelectric layer and electrodes. The piezoelectric layer contains bismuth sodium potassium titanate and satisfies the inequality 0?Pr/Pm?0.25 at 25° C., where Pm and Pr are the saturation polarization and remanent polarization, respectively, of the piezoelectric layer.

Abstract: A liquid ejection head, comprises a pressure generation chamber communicating with a nozzle opening and a piezoelectric element having a piezoelectric layer and an electrodes. The piezoelectric layer is a perovskite type complex oxide containing bismuth, iron, and cerium. The piezoelectric layer contains the cerium in a proportion of 0.01 molar ratio or more and 0.13 molar ratio or lower based on the total amount of the bismuth and the cerium.

Abstract: Provided is a liquid ejecting apparatus which comprises a pressure generation chamber, a piezoelectric element, and a driving unit which supplies a driving signal to the piezoelectric element. The piezoelectric layer shows electric field induced phase transition and when among voltages at which the piezoelectric layer shows the electric field induced phase transition a voltage having a higher absolute value is defined as VF and a voltage having a lower absolute value is defined as VAF, the driving unit supplies to the piezoelectric element a driving signal which allows the voltage to be applied to the piezoelectric layer, allows the voltage that passes through VF and of which the absolute value is equal to or higher than VAF to be set as a start point, and allows the voltage to be changed within a range where the absolute value is equal to or higher than VAF.

Abstract: A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element. The piezoelectric element has piezoelectric layer contains a perovskite complex oxide containing Bi, La, Fe, and Mn and can undergo electric-field-induced phase transition.

Abstract: A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element. The piezoelectric layer contains a perovskite complex oxide containing Bi, La, Fe, and Mn and is ferroelectric.

Abstract: A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element. The piezoelectric layer contains a perovskite complex oxide containing Bi, La, Fe, and Mn and is ferroelectric.

Abstract: A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element. The piezoelectric element has piezoelectric layer contains a perovskite complex oxide containing Bi, La, Fe, and Mn and can undergo electric-field-induced phase transition.

Abstract: A liquid ejecting head includes a plate which is composed of a material containing silicon, a titanium oxide layer which is disposed above the plate, a bismuth-containing layer which is disposed above the titanium oxide layer and contains bismuth, a first electrode which is disposed above the bismuth-containing layer and composed of platinum, a piezoelectric layer which is disposed above the first electrode and composed of a piezoelectric material containing at least bismuth, and a second electrode which is disposed above the piezoelectric layer.

Abstract: A piezoelectric element comprises a piezoelectric layer and an electrode which is provided with the piezoelectric layer. The piezoelectric layer comprises a complex oxide which has a perovskite structure including bismuth, iron, a first dopant element which is at least one type selected from a group formed from sodium, potassium, calcium, and strontium, and a second dopant element which is at least one type selected from a group formed from manganese, titanium, vanadium, niobium, and tin.

Abstract: A liquid ejection head, comprises a pressure generation chamber communicating with a nozzle opening and a piezoelectric element having a piezoelectric layer and an electrodes. The piezoelectric layer is a perovskite type complex oxide containing bismuth, iron, and cerium. The piezoelectric layer contains the cerium in a proportion of 0.01 molar ratio or more and 0.13 molar ratio or lower based on the total amount of the bismuth and the cerium.

Abstract: A piezoelectric element comprises a piezoelectric layer consisting a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is at least one of magnesium and zinc and a second dopant element that is cerium.

Abstract: A piezoelectric element includes a piezoelectric layer, and an electrode provided on the piezoelectric layer. The piezoelectric layer is composed of a compound oxide having a perovskite structure and containing bismuth lanthanum ferrate manganate and barium titanate. The molar ratio of the barium titanate to the total amount of the bismuth lanthanum ferrate manganate and the barium titanate is 0.09 or more and 0.29 or less. A liquid ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element as described above. A liquid ejecting apparatus includes the above-described liquid ejecting head.

Abstract: A piezoelectric element comprises a piezoelectric layer consisting a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is magnesium and a second dopant element that is at least one of manganese, titanium, vanadium, niobium and tin.

Abstract: A piezoelectric element comprises a piezoelectric layer consisting of a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is at least one selected from the group consisting of sodium, potassium, calcium, strontium and barium, and a second dopant element that is cerium.

Abstract: A liquid ejecting head includes a plate which is composed of a material containing silicon, a titanium oxide layer which is disposed above the plate, a bismuth-containing layer which is disposed above the titanium oxide layer and contains bismuth, a first electrode which is disposed above the bismuth-containing layer and composed of platinum, a piezoelectric layer which is disposed above the first electrode and composed of a piezoelectric material containing at least bismuth, and a second electrode which is disposed above the piezoelectric layer.

Abstract: A method for manufacturing a piezoelectric element comprising forming a titanium film containing titanium; forming a platinum film containing platinum on the titanium film; forming a piezoelectric precursor film containing bismuth, lanthanum, iron and manganese on the platinum film; crystallizing the piezoelectric precursor film to form a piezoelectric layer by firing the piezoelectric precursor film in an atmosphere of an inert gas; and forming an electrode on the piezoelectric layer.

Abstract: A piezoelectric element comprises a piezoelectric layer consisting a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is magnesium and a second dopant element that is at least one of manganese, titanium, vanadium, niobium and tin.

Abstract: A piezoelectric element comprises a piezoelectric layer consisting a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is at least one of magnesium and zinc and a second dopant element that is cerium.

Abstract: A piezoelectric element comprises a piezoelectric layer and an electrode which is provided with the piezoelectric layer. The piezoelectric layer comprises a complex oxide which has a perovskite structure including bismuth, iron, a first dopant element which is at least one type selected from a group formed from sodium, potassium, calcium, and strontium, and a second dopant element which is at least one type selected from a group formed from manganese, titanium, vanadium, niobium, and tin.