Abstract: A semiconductor memory device in which information is written into a storage element by flowing current. The semiconductor memory device has a shortened write speed and reduced power consumption by preventing parasitic capacitors from prolonging the time required for a write current to reach a predetermined value. The semiconductor memory device includes storage elements for storing information, a constant current source for writing information into the storage element by flowing current, and a boost circuit for charging parasitic capacitors by a time when an amount of a current flowed by the constant current source reaches an amount of a current required to write information into the storage element, at a predetermined position related to the storage element.

Abstract: A breathing simulator for use in an evaluation test of respirators is provided, the breathing simulator being able to simulate larger respirations, undergoing a change neither in cycle nor in the amount of ventilation even in a test of respirators having a high pressure drop, able to easily generate not only such regular waveforms as a sine wave, a rectangular wave and a triangular wave but also respiration waveforms of workers and arbitrarily created waveforms as air waveforms, being reduced in size and power consumption, and easy to maintenance.

Abstract: By first readout, the current input from a selected cell is converted by a preamplifier and a VCO into pulses of a frequency inversely proportionate to the current value, and the number of the pulses within a preset time interval is counted by a counter 5 so as to be stored in a readout value register. A selected cell is then written to one of two storage states, and second readout is then carried out. The storage state of the selected cell is verified by comparing a count value of the counter for the second readout, a count value for the first readout as stored in a readout value register and a reference value stored in a reference value register to one another. By the use of the VCO, the integrating capacitor for the current or the generation of a reference pulse may be eliminated.

Abstract: There is provided a magnetization direction control method for controlling magnetization directions of first to third ferromagnetic layers (11-13) within a synthetic antiferromagnet structure (10A) having the first to the third ferromagnetic layers (11-13) and first and second non-magnetic layers (21, 22) interposed therebetween, without coupling antiferromagnetic material. The magnetization direction control method is composed of steps of (a) applying an external magnetic field HE to the synthetic antiferromagnet structure (10A) so as to direct the magnetizations of the first to third ferromagnetic layers in the same direction, and (b) reducing the external magnetic field to reverse the magnetization of one or some of the first to third ferromagnetic layers (11-13).

Abstract: A MRAM includes: first wirings, second wirings, memory cells, a second sense amplifier and a first sense amplifier. The first wirings and second wirings are extended in a first and a second direction. The memory cells are placed correspondingly to positions where the first wirings are crossed with the second wirings. The second sense amplifier detects a state of a reference cell on the basis of an output from the reference cell provided by corresponding to a reference wiring. The first sense amplifier (2) detects a state of the memory cell on the basis of an output from the reference cell and an output from the memory cell. The memory cell includes a magnetic tunneling junction element having a laminated free layer. The magnetic tunneling junction element has a magnetization easy axis direction which is different from the first and second directions.

Abstract: A semiconductor memory device is provided with a memory array including memory cells arranged in rows and columns; and a sense amplifier circuit. Each of the memory cells includes at least one magnetoresistive element storing data, and an amplifying member used to amplify a signal generated by a current through the at least one magnetoresistive element. The sense amplifier circuit identifies data stored in the at least one magnetoresistive element in response to an output signal of the amplifying member.

Abstract: In a magnetic random access memory, a memory cell includes a magnetic field generating section having an extension wiring line, and connected with a first selected bit line, a conductive pattern, and a magnetic resistance element having a spontaneous magnetization, storing a data and connected between the extension wiring line and the conductive pattern. In a data write operation into the memory cell, a write data is written in the magnetic resistance element of the memory cell by a write electric current which flows through the extension wiring line of the magnetic field generating section of the memory cell, and a value of the write data is determined based on a direction of the write electric current. In a data read operation from the memory cell, a read electric current flows through the extension wiring line of the magnetic field generating section and the magnetic resistance element in the memory cell.

Abstract: A method for producing an extract and/or a squeezed liquid, which comprises: feeding a food to be extracted and/or squeezed into a crushing apparatus; adding a solvent into the crushing apparatus immediately after and/or while milling the food; extracting and/or squeezing a useful food component of the food into the solvent; and carrying out liquid-solid separation by removing the resulting extracted residue and/or squeezed residue with a continuous solid-liquid separation apparatus.

Abstract: By a first readout, the current input from a selected cell is converted by a preamplifier and a voltage-controlled oscillator into pulses of a frequency inversely proportionate to the current value, and the number of the pulses within a preset time interval is counted by a counter to be stored in a readout value register. The selected cell is then written to one of two storage states, and a second readout is performed. The storage state of the selected cell is verified by comparing a count value of the counter for the second readout, a count value for the first readout as stored in the readout value register and a reference value stored in a reference value register.

Abstract: An MRAM has a plurality of bit lines, a reference bit line, a plurality of memory cells and reference cells and a read section. The memory cells are provided along the bit lines and the reference cells along the reference bit line. The memory cell and reference cell have a tunneling magnetic resistance and a reference tunneling magnetic resistance, each of which has a spontaneous magnetization whose direction is reversed in accordance with data stored therein. The read section has a first resistance section which contains a ninth terminal connected with a bit line and a tenth terminal connected with the first power supply, a second resistance section which contains an eleventh terminal connected with the reference bit line and a twelfth terminal connected with the first power supply, and a comparing section which compares a sense voltage on the ninth terminal and a reference voltage of the eleventh terminal.

Abstract: An air shower for removing a particle from an object by blowing air to the object which includes at least one first outlet for discharging the air from the at least one first outlet toward at least a portion of the object so that a flow axis of the air flowing out of the at least one first outlet is swung frequently and alternately in a first swingable direction, and at least one second outlet for discharging the air from the at least one second outlet so that a flow axis of the air flowing out of the at least one second outlet is swung frequently and alternately in a second swingable direction which is different from the first swingable direction. The first swingable direction and the second swingable direction extend so as to be non-parallel to one another and to intersect one another.

Abstract: An improved magnetic random access memory (MRAM) has two sets of signal lines where each set is substantially perpendicular to the other, and memory cells located at the intersections of the signal lines. Each memory cell has a magneto-resistant element containing a magnetization layer whose magnetic characteristics change depending on the intensity of the magnetic field applied. A desired magnetic field can be applied to any cell by supplying appropriate write currents to the signal lines intersecting at that cell. The relationship between applied magnetic fields, two different threshold function values, and four different magnetic fields that result at each cell is disclosed. Better performance, namely, improved selectivity and a more stable write operation, results.

Abstract: By first readout, the current input from a selected cell 13 is converted by a preamplifier 3 and a VCO 4 into pulses of a frequency inversely proportionate to the current value, and the number of the pulses within a preset time interval is counted by a counter 5 so as to be stored in a readout value register 6. A selected cell is then written to one of two storage states, and second readout is then carried out. The storage state of the selected cell is verified by comparing a count value of the counter for the second readout, a count value for the first readout as stored in a readout value register and a reference value stored in a reference value register 7 to one another. By the use of the VCO, the integrating capacitor for the current or reference pulse generating means, so far needed, may be eliminated to assure a small area, low power consumption and fast readout.

Abstract: The present invention relates to a semiconductor memory device in which information is written into a storage element by flowing current. The invention aims at shortening write speed and reducing power consumption by preventing parasitic capacitors from prolonging the time required for a write current to reach a predetermined value. The apparatus includes storage elements for storing information, a constant current source for writing information into the storage element by flowing current, and a boost circuit for charging parasitic capacitors by a time when an amount of a current flowed by said constant current source reaches an amount of a current required to write information into the storage element, at a predetermined position related to the storage element.

Abstract: An air shower for removing a particle from an object by blowing air to the object which includes at least one first outlet for discharging the air from the at least one first outlet toward at least a portion of the object so that a flow axis of the air flowing out of the at least one first outlet is swung frequently and alternately in a first swingable direction, and at least one second outlet for discharging the air from the at least one second outlet so that a flow axis of the air flowing out of the at least one second outlet is swung frequently and alternately in a second swingable direction which is different from the first swingable direction. The first swingable direction and the second swingable direction extend so as to be non-parallel to one another and to intersect one another.

Abstract: An air shower for removing a particle from an object by blowing an air to the object. The air shower includes an outlet for discharging the air from the outlet toward the object so that a flow axis of the air flowing out of the outlet is swung frequently and alternately, and an inner wall which extends from an outer periphery of the outlet in a radial direction of the outlet.

Abstract: A magnetic random access memory is composed of a plurality of first signal lines provided to extend in a first direction, a plurality of second signal lines provided to extend in a second direction substantially perpendicular to the first direction, a plurality of memory cells respectively provided at the intersections of the plurality of first signal lines and the plurality of second signal lines, and a plurality of magnetic structures respectively provided to the plurality of memory cells. Each of the plurality of memory cells has a magneto-resistance element containing a spontaneous magnetization layer which has a first threshold function, and the direction of the spontaneous magnetization of the spontaneous magnetization layer is reversed when an element applied magnetic field having the intensity equal to or larger than a first threshold function value is applied.

Abstract: Compounds having the formula (I): wherein A represents a group such as a cyclic group, R1 and R2 represent groups such as alkyl groups or hydroxymethyl groups, and n represents 1 or 2, or pharmacologically acceptable salts thereof or pharmacologically acceptable esters thereof have superior activity and stability, and are useful for the treatment and/or prevention of diabetes mellitus, or the like.

Abstract: A semiconductor memory device which uses tunneling magnetoresistive element as memory cells and eliminates the temperature dependencies in a write margin and read margin in such a way as to be able to accurately output a write current at the time of writing the memory cells. The semiconductor memory device is constructed in such a way that main bit lines or main word lines are laid out so as to cross bit lines or word lines perpendicularly, and a main bit line selector or a main word line selector which respectively selects the main bit line or the main word line is arranged outside a memory cell array.

Abstract: The present invention provides a method for obtaining an aptamer capable of specifically adsorbing to Verotoxin-1 produced by Enterohemorrhagic Escherichia coli by an in vitro selection method utilizing affinity chromatography, particularly, a method including use of an affinity column immobilizing thereon a peptide having an amino acid sequence of Verotoxin-1, for the affinity chromatography, and a single strand nucleic acid molecule, which is an aptamer capable of specifically adsorbing to Verotoxin-1.