Abstract: The maximum transmittable amount value (outmax) and the average transmission amount value (average) stored in a transmission amount setting circuit are supplied to a maximum transmission amount manager, a transmission result amount manager, and a maximum transmission amount calculator, respectively. The average transmission amount value is added up and updated in the maximum transmission amount manager, and the data transmission amount value (rvs) output from a data transmitter is added up and updated in the transmission result amount manager. These added-up values are reset under predetermined conditions to prevent an overflow. Based on the values added up in this way, the maximum amount of data to be transmitted is determined and, with this value as the threshold, a data transmission request is output from the data transmitter to a data receiver unit.

Abstract: In an air shower apparatus, an inlet duct guides the air so that the air is directed along a first flow axis of the air, and a variable condition area communicates fluidly with the air flowing out from the inlet duct at at least one side in a direction perpendicular to the first flow axis, to generate a fluctuation at the variable condition area in at least one of a pressure to be applied to the air flowing out from the inlet duct at the variable condition area and a mass flow rate of a supplemental air to be applied from the variable condition area onto the air flowing out of the inlet duct in a fluctuating direction oblique to the first flow axis so that a second flow axis of the air passing the variable condition area is frequently deflected from the first flow axis by the fluctuation.

Abstract: An air shower for removing a particle from an object by blowing air to the object which includes at least one first outlet for discharging the air from the at least one first outlet toward at least a portion of the object so that a flow axis of the air flowing out of the at least one first outlet is swung frequently and alternately in a first swingable direction, and at least one second outlet for discharging the air from the at least one second outlet so that a flow axis of the air flowing out of the at least one second outlet is swung frequently and alternately in a second swingable direction which is different from the first swingable direction. The first swingable direction and the second swingable direction extend so as to be non-parallel to one another and to intersect one another.

Abstract: In a magnetic random access memory, a cross point cell array of memory cells is arranged in a matrix of columns and rows, and each of the memory cells has a magneto-resistance element. A column of dummy memory cells is provided, and each of the dummy memory cells has a magneto-resistance element. Word lines are provided for the rows of the memory cells and the dummy memory cells, respectively, and bit lines are provided for the columns of the memory cells, respectively. A dummy bit line is provided for the column of dummy memory cells. A read circuit is connected with the cross point cell array and the dummy bit line.

Abstract: An on board refueling vapor recovery system includes a first fuel vapor passage for connecting a fuel tank with a canister, a second fuel vapor passage for connecting an inlet portion of a fuel filler pipe with the fuel vapor passage (a tank main body) and a check valve in the second fuel vapor passage. The check valve is integrated with a first quick connector of a resin hose (a resin tube) which constitutes the second fuel vapor passage. Therefore, the number of man hours required for assembling the on board refueling vapor recovery system can be reduced. In addition, the space required for installing any of the on board refueling vapor recovery system can also be reduced. Furthermore, the amount of released fuel evaporative emissions or fuel evaporative emissions can be reduced.

Abstract: By first readout, the current input from a selected cell 13 is converted by a preamplifier 3 and a VCO 4 into pulses of a frequency inversely proportionate to the current value, and the number of the pulses within a preset time interval is counted by a counter 5 so as to be stored in a readout value register 6. A selected cell is then written to one of two storage states, and second readout is then carried out. The storage state of the selected cell is verified by comparing a count value of the counter for the second readout, a count value for the first readout as stored in a readout value register and a reference value stored in a reference value register 7 to one another. By the use of the VCO, the integrating capacitor for the current or reference pulse generating means, so far needed, may be eliminated to assure a small area, low power consumption and fast readout.

Abstract: Hydrates of the compound of formula (I) and crystalline forms thereof have excellent storage stability and are useful medicaments.

Abstract: A food objective for extraction and/or squeezing is charged into a colloid mill or a twin-screw extruder; immediately after and/or while milling, a low-temperature solvent (for example, water or milk of from ?3 to 50° C.) is added; and after treating the food using the extruder, grounds are removed to produce an extract and/or a squeezed liquid. After milling objective foods, for example, a single product or a combination of foods such as coffee, green tea, black tea, herb tea, wild grass tea, Chinese medical tea, cocoa, vanilla, fruit, and vegetable, extraction and/or squeezing can be rapidly and extremely efficiently carried out at a low temperature, which is appropriate for the mass and continuous production. Furthermore, in comparison with the conventional employed extraction and/or squeezing methods such as a low-temperature extraction method which leads to deterioration in flavor due to oxidation after milling, etc.

Abstract: An air shower for removing a particle from an object by blowing an air to the object. The air shower includes an outlet for discharging the air from the outlet toward the object so that a flow axis of the air flowing out of the outlet is swung frequently and alternately, and an inner wall which extends from an outer periphery of the outlet in a radial direction of the outlet.

Abstract: For achieving a fluidic device, being able to be made small in sizes, comprising a fluid inflow opening 1, a connector duct 2, and a fluid jet nozzle, wherein the connector duct 2 is constructed with curves, and is further constructed with two (2) pieces of flow passages, being symmetric on both sides. Constructing the connector duct with the curves reduces resistance of fluid within the duct, and further dividing the connector duct into two (2) parts in both side enhances the flows at confluent point in the duct (increase of the flow velocity).

Abstract: A pair of memory elements form a unit cell and these elements are magnetized in opposite directions. At the time of read a voltage of V1 is applied to a word line WL0 and a voltage of V2 is applied to the word line/WL0. Further a specific bit line is connected to a read circuit 22 and the bit line is virtually grounded to Vg=(V1+V2)/2. Therefore, current Is passed through the bit line is as follows: Is=Vs·(Rb−Ra)/(Ra·Rb), wherein the resistance value of the memory element 1a is Ra, the resistance value of the memory element 1b is Rb. Thus, if a direction of the current is detected by the read circuit, information written in the unit cell can be read. Thus, a non-volatile magnetic memory whose cell configuration is simple, and which can be integrated with high density and has a read circuit having a small surface area and low power consumption, can be obtained.

Abstract: In an air shower apparatus, an inlet duct guides the air so that the air is directed along a first flow axis of the air, and a variable condition area communicates fluidly with the air flowing out from the inlet duct at at least one side in a direction perpendicular to the first flow axis, to generate a fluctuation at the variable condition area in at least one of a pressure to be applied to the air flowing out from the inlet duct at the variable condition area and a mass flow rate of a supplemental air to be applied from the variable condition area onto the air flowing out of the inlet duct in a fluctuating direction oblique to the first flow axis so that a second flow axis of the air passing the variable condition area is frequently deflected from the first flow axis by the fluctuation.

Abstract: In a magnetic random access memory, a memory cell includes a magnetic field generating section having an extension wiring line, and connected with a first selected bit line, a conductive pattern, and a magnetic resistance element having a spontaneous magnetization, storing a data and connected between the extension wiring line and the conductive pattern. In a data write operation into the memory cell, a write data is written in the magnetic resistance element of the memory cell by a write electric current which flows through the extension wiring line of the magnetic field generating section of the memory cell, and a value of the write data is determined based on a direction of the write electric current. In a data read operation from the memory cell, a read electric current flows through the extension wiring line of the magnetic field generating section and the magnetic resistance element in the memory cell.

Abstract: A semiconductor memory apparatus using tunnel magnetic resistance elements comprises a plurality of cell arrays. When data is read from a cell in one of the cell array, a word line connected to the cell is connected to a voltage source, a bit line connected to the cell is connected to an input of a sense amplifier, word lines in the cell array concerned except for the word line connected to the cell and bit lines in the cell array concerned except for the bit line connected to the cell are isolated. A subtracter subtracts an offset current which is generated in another cell array from a current flowing from the bit line connected the cell. An integrator integrates the result of the subtraction. A comparator, a read current value register, and a reference value register performs self-reference reading method on the result of the integration.

Abstract: In a magnetic random access memory, a cross point cell array of memory cells is arranged in a matrix of columns and rows, and each of the memory cells has a magneto-resistance element. A column of dummy memory cells is provided, and each of the dummy memory cells has a magneto-resistance element. Word lines are provided for the rows of the memory cells and the dummy memory cells, respectively, and bit lines are provided for the columns of the memory cells, respectively. A dummy bit line is provided for the column of dummy memory cells. A read circuit is connected with the cross point cell array and the dummy bit line.

Abstract: A pair of memory elements form a unit cell and these elements are magnetized in opposite directions. At the time of read a voltage of V1 is applied to a word line WL0 and a voltage of V2 is applied to the word line/WL0. Further a specific bit line is connected to a read circuit 22 and the bit line is virtually grounded to Vg=(V1+V2)/2. Therefore, current Is passed through the bit line is as follows: Is=Vs·(Rb−Ra)/(Ra·Rb), wherein the resistance value of the memory element 1a is Ra, the resistance value of the memory element 1b is Rb. Thus, if a direction of the current is detected by the read circuit, information written in the unit cell can be read. Thus, a non-volatile magnetic memory whose cell configuration is simple, and which can be integrated with high density and has a read circuit having a small surface area and low power consumption, can be obtained.

Abstract: Disclosed is a semiconductor memory device which uses tunneling magnetoresistive element as memory cells and eliminates the temperature dependencies in a write margin and read margin in such a way as to be able to accurately output a write current at the time of writing the memory cells. The semiconductor memory device is constructed in such a way that main bit lines or main word lines are laid out so as to cross bit lines or word lines perpendicularly, and a main bit line selector or a main word line selector which respectively selects the main bit line or the main word line is arranged outside a memory cell array.

Abstract: The present invention provides a method for obtaining an aptamer capable of specifically adsorbing to Verotoxin-1 produced by Enterohemorrhagic Escherichia coli by an in vitro selection method utilizing affinity chromatography, particularly, a method including use of an affinity column immobilizing thereon a peptide having an amino acid sequence of Verotoxin-1, for the affinity chromatography, and a single strand nucleic acid molecule, which is an aptamer capable of specifically adsorbing to Verotoxin-1.

Abstract: Hydrates of the compound of formula (I) and crystalline forms thereof have excellent storage stability and are useful medicaments.

Abstract: An on board refueling vapor recovery system includes a first fuel vapor passage for connecting a fuel tank with a canister, a second fuel vapor passage for connecting an inlet portion of a fuel filler pipe with the fuel vapor passage (a tank main body) and a check valve in the second fuel vapor passage. The check valve is integrated with a first quick connector of a resin hose (a resin tube) which constitutes the second fuel vapor passage. Therefore, the number of man hours required for assembling the on board refueling vapor recovery system can be reduced. In addition, the space required for installing any of the on board refueling vapor recovery system can also be reduced. Furthermore, the amount of released fuel evaporative emissions or fuel evaporative emissions can be reduced.