Abstract: A distributed antenna includes a strip member extending in a strip-like shape including a dielectric body of a plate shape having a first surface that is one surface of the dielectric body and a second surface that is opposite to the first surface; a transmission line provided on the first surface, on the second surface, or between the first surface and the second surface; and a plurality of antenna elements electrically connected to the transmission line and disposed in a distributed manner on the first surface or on the second surface, or electrically connected to the transmission line and disposed in a distributed manner between the first surface and the second surface.

Abstract: Provided is a beer-taste beverage comprising 1000 ppb by mass or less of 4-vinylguaiacol, having an ethyl hexanoate content of 120 ppb by mass or more, and comprising at least one aroma component (X) selected from ?-decanolactone and ethyl 2-methylbutyrate, wherein a ratio of the content (unit: ppb by mass) of ethyl hexanoate to the total content (unit: ppb by mass) of the aroma component (X) [ethyl hexanoate/aroma component (X)] is 1100 or less.

Abstract: Provided is a beer-taste beverage comprising 1000 ppb by mass or less of 4-vinylguaiacol, having an ethyl n-butyrate content of 140 ppb by mass or more, and comprising at least one lactone selected from ?-decanolactone and ?-undecalactone, wherein a ratio of the content (unit:ppb by mass) of ethyl n-butyrate to the total content (unit:ppb by mass) of the lactone [ethyl n-butyrate/lactone] is 1100 or less.

Abstract: Provided is a beer-taste beverage comprising 1000 ppb by mass or less of 4-vinylguaiacol, and having an ethyl n-butyrate content of 140 ppb by mass or more, a ratio of the content (unit: ppb by mass) of ethyl n-butyrate to the content (unit: ppb by mass) of ?-nonalactone [ethyl n-butyrate/?-nonalactone] is 23 or less.

Abstract: A film deposition method includes steps of: placing a substrate in a substrate receiving area of a susceptor provided in a vacuum chamber; evacuating the vacuum chamber; alternately supplying plural kinds of reaction gases to the substrate in the substrate receiving area from corresponding reaction gas supplying parts thereby to form a thin film on the substrate; supplying plasma including a chemical component that reacts with second reaction gas adsorbed on the substrate from a plasma generation part to the substrate when the thin film is being formed, thereby to alter the thin film on the substrate; and changing plasma intensity of the plasma supplied to the substrate, at a predetermined point of time to a different plasma intensity of the plasma that is generated and supplied to the substrate by the plasma generation part before the predetermined point of time.

Abstract: A film deposition method is provided for filling a recessed pattern formed in a surface of a substrate with a film. In the method, a halogen-containing gas is supplied to a top surface of a substrate and an upper portion of a recessed pattern, thereby forming an adsorption blocking group on the top surface of the substrate and the upper portion of the recessed pattern. A first reaction gas is supplied to a surface of the substrate including the top surface and the recessed pattern to cause the first reaction gas to adsorb on an area where the adsorption blocking group is not formed on. A second reaction gas reactable with the first reaction gas is supplied to the surface of the substrate to produce a reaction product of the first reaction gas adsorbed on the bottom portion of the recessed pattern and the second reaction gas.

Abstract: A method for forming a protective film is provided. In the method, a source gas containing an organic metal gas or an organic semi-metal gas is supplied to a substrate having a plurality of recessed shapes formed in a surface so as to cause the source gas to adsorb on the surface of the substrate including the plurality of recessed shapes. Then, an oxidation gas is supplied to the surface of the substrate including the plurality of recessed shapes to oxidize the source gas adsorbed on the surface of the substrate, thereby depositing an oxidation film of the organic metal or the organic semi-metal on a flat area between the plurality of recessed shapes. Supplying the source gas to the substrate and supplying the oxidation gas to the substrate are repeated at a rate in a range of 90 to 300 cycles per minute.

Abstract: A transfer device transfers communication data, comprising: a search unit having a first search means that includes a first table and a first search circuit, the search unit referring to the first table using the first search circuit to search for the first transfer destination information from the first destination information; a search control unit that is a reconfigurable mechanism that creates search designation information and executes a first search designation information creation process of creating first search designation information; a control unit that controls the search unit and creates in the search unit at least a second search means including a second table and a second search circuit, the control unit controlling the search control unit to add to the search control unit a second search designation information creation process; and a transfer unit that receives the communication data and transmits the communication data to a transfer destination.

Abstract: In a core node, packet related information included in a packet is extracted, a virtual queue length, which is an estimated value of a queue length of a transmission queue addressed to a user in an edge device, is calculated and held on a user basis on the basis of the packet related information and band information of a line between the edge device and the user, and a determination is made, on a user basis, as to whether or not band control is required, on the basis of the virtual queue length and predetermined conditions so as to perform, on the basis of the result of the determination, the band control of the packet addressed to the user on a user basis in a packet relay part.

Abstract: A transfer device transfers communication data, comprising: a search unit having a first search means that includes a first table and a first search circuit, the search unit referring to the first table using the first search circuit to search for the first transfer destination information from the first destination information; a search control unit that is a reconfigurable mechanism that creates search designation information and executes a first search designation information creation process of creating first search designation information; a control unit that controls the search unit and creates in the search unit at least a second search means including a second table and a second search circuit, the control unit controlling the search control unit to add to the search control unit a second search designation information creation process; and a transfer unit that receives the communication data and transmits the communication data to a transfer destination.

Abstract: A film deposition method includes steps of: placing a substrate in a substrate receiving area of a susceptor provided in a vacuum chamber; evacuating the vacuum chamber; alternately supplying plural kinds of reaction gases to the substrate in the substrate receiving area from corresponding reaction gas supplying parts thereby to form a thin film on the substrate; supplying plasma including a chemical component that reacts with second reaction gas adsorbed on the substrate from a plasma generation part to the substrate when the thin film is being formed, thereby to alter the thin film on the substrate; and changing plasma intensity of the plasma supplied to the substrate, at a predetermined point of time to a different plasma intensity of the plasma that is generated and supplied to the substrate by the plasma generation part before the predetermined point of time.

Abstract: In a core node, packet related information included in a packet is extracted, a virtual queue length, which is an estimated value of a queue length of a transmission queue addressed to a user in an edge device, is calculated and held on a user basis on the basis of the packet related information and band information of a line between the edge device and the user, and a determination is made, on a user basis, as to whether or not band control is required, on the basis of the virtual queue length and predetermined conditions so as to perform, on the basis of the result of the determination, the band control of the packet addressed to the user on a user basis in a packet relay part.

Abstract: A method for forming a protective film is provided. In the method, a source gas containing an organic metal gas or an organic semi-metal gas is supplied to a substrate having a plurality of recessed shapes formed in a surface so as to cause the source gas to adsorb on the surface of the substrate including the plurality of recessed shapes. Then, an oxidation gas is supplied to the surface of the substrate including the plurality of recessed shapes to oxidize the source gas adsorbed on the surface of the substrate, thereby depositing an oxidation film of the organic metal or the organic semi-metal on a flat area between the plurality of recessed shapes. Supplying the source gas to the substrate and supplying the oxidation gas to the substrate are repeated at a rate in a range of 90 to 300 cycles per minute.

Abstract: A film deposition method is provided for filling a recessed pattern formed in a surface of a substrate with a film. In the method, a halogen-containing gas is supplied to a top surface of a substrate and an upper portion of a recessed pattern, thereby forming an adsorption blocking group on the top surface of the substrate and the upper portion of the recessed pattern. A first reaction gas is supplied to a surface of the substrate including the top surface and the recessed pattern to cause the first reaction gas to adsorb on an area where the adsorption blocking group is not formed on. A second reaction gas reactable with the first reaction gas is supplied to the surface of the substrate to produce a reaction product of the first reaction gas adsorbed on the bottom portion of the recessed pattern and the second reaction gas.

Abstract: A film deposition method includes placing a substrate in a substrate receiving portion of a table provided in a vacuum chamber; and performing, at least once, a film deposition-alteration step and an alteration step. The film deposition-alteration step includes an adsorption step of allowing a first reaction gas to be adsorbed on an upper surface, a reaction product production step of allowing a second reaction gas and the first reaction gas adsorbed on the upper surface to react each other, thereby producing a reaction product, and an alteration process of allowing the upper surface to be exposed to plasma into which an alteration gas is activated. The first reaction gas is supplied from the first reaction gas supplying portion, the second reaction gas is supplied from the second reaction gas supplying portion, and the alteration is supplied from the plasma.

Abstract: It is provided a relay apparatus, comprising: a plurality of ports coupled to a network; a Layer 2 processing module for relaying, via the network, a frame comprising a Layer 2 header and a Layer 2 data segment, the Layer 2 data segment comprising a Layer 3 header and a Layer 3 data segment; and an output unit, wherein the module updates a value of a particular field of the Layer 3 header, uses a first characteristic value related to the Layer 3 header, which is stored in a given field, and a pre-update value and post-update value of the particular field to compute a second characteristic value related to the Layer 3 header, and updates the value of the given field from the first characteristic value to the second characteristic value, and wherein the output unit outputs the updated frame as an output destination of the updated frame.

Abstract: A film forming method includes supplying a first source gas containing a first metal element onto a substrate, supplying a second source gas containing a second metal element onto the substrate, supplying a reaction gas converted into plasma and containing a nonmetal element reacting with the first metal element and the second metal element to generate a first reaction product and a second reaction product, respectively, to the substrate, to generate a third reaction product containing the first metal element, the second metal element and the nonmetal element. A mixing ratio of the first metal element contained in the third reaction product is higher than that of the second metal element, and a crystallization temperature of the second reaction product is higher than that of the first reaction product.

Abstract: A method of depositing a continuous TiN film on a substrate is provided. In the method, a continuous TiO2 film is deposited on a substrate, and then a continuous TiN film is deposited on the continuous TiO2 film. The TiN film is thicker than the TiO2 film.

Abstract: A method of manufacturing a silicon oxide film by using a film deposition apparatus is provided. The apparatus includes a turntable including a substrate receiving part on its upper surface, a first gas supply part to supply a first gas to the turntable in a first process area, and a second gas supply part arranged in a second process area apart from the first process area to supply a second gas. In the method, a silicon-containing gas is supplied from the first gas supply part as the first gas. A hydrogen gas and an oxidation gas are supplied from the second gas supply part as the second gas. The first gas is caused to adsorb on the substrate in the first process area, and the second gas is caused to react with the first gas adsorbed on the substrate in the second process area while rotating the turntable.

Abstract: A method of manufacturing a silicon oxide film is provided. In the method, a substrate having a metal film on a surface thereof is loaded in a reaction chamber, and supply of a hydrogen gas into the reaction chamber is started by a hydrogen gas supply unit after the step of loading the substrate in the reaction chamber. Then, supply of an oxidation gas into the reaction chamber is started by an oxidation gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber, and supply of a silicon-containing gas into the reaction chamber is started by a silicon-containing gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber.