Abstract: A film deposition method includes steps of transferring a substrate having a pattern including a concave part into a vacuum chamber; supplying a first reaction gas to the substrate from a first reaction gas supplying part, thereby allowing the first reaction gas to be adsorbed on the substrate; supplying a second reaction gas that reacts with the first reaction gas to the substrate from a second reaction gas supplying part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and forming a reaction product of the first and the second reaction gases on the substrate; supplying an alteration gas to the substrate through an activated gas supplying part capable of activating the alteration gas; and supplying an etching gas to the substrate chamber through the activated gas supplying part under an environment where the reaction product is not formed.

Abstract: A film deposition apparatus includes a first turntable including at least ten substrate receiving areas that receive corresponding 300 mm substrates; a first reaction gas supplying portion arranged in a first area inside the chamber to supply a first reaction gas; a second reaction gas supplying portion arranged in a second area away from the first reaction gas supplying portion along the rotation direction of the first turntable to supply a second reaction gas; and a separation area arranged between the first and the second areas. The separation area includes a separation gas supplying portion that supplies a separation gas that separates the first reaction and the second reaction gases, and a ceiling surface having a height so that a pressure in a space between the ceiling surface and the first turntable is higher with the separation gas than pressures in the first and the second areas.

Abstract: A bandwidth calculation section calculates a usable bandwidth from a communication amount of each user or a session connection time stored in a statistic management memory and minimum bandwidth information and maximum bandwidth information recorded in a bandwidth setting memory. The bandwidth calculation section allocates a large usable bandwidth to a user with a small communication amount or a short session connection time. A transmission control section performs transmission scheduling of packet information stored in a packet buffer based on a transmission scheduled time calculated from the usable bandwidth stored in a transmission scheduled time memory.

Abstract: A relay device of relaying a communication packet is disclosed, which comprises: an input module configured to receive the communication packet as an input; a buffer configured to have a plurality of queues and temporarily accumulated the received communication packet; a sorter configured to sort the received communication packet to one of the plurality of queues, depending on a specific value obtained by a predetermined function that gives an aggregate output from an input which is transfer information regarding transfer of the communication packet; and a band controller configured to control a bandwidth for each of the plurality of queues and output communication packets accumulated in the plurality of queues for transmission of the communication packets. This ensures the quality of service, while saving the capacity of the buffer used for the queues.

Abstract: When alternately performing a film deposition step where a silicon-containing gas and O3 gas are alternately supplied to a substrate on a susceptor by rotating the susceptor thereby to forma thin film of the reaction product, and an alteration step where the reaction product is altered by irradiating plasma to the substrate, plasma intensity of the plasma is changed during film deposition. Specifically, the plasma intensity is lower when a thickness of the thin film is small (or at an initial stage of the film deposition—alteration step), and is increased as the thin film becomes thicker (or as the number of the film deposition steps is increased). Alternatively, the plasma intensity is higher when the thin film is relatively thin and then reduced.

Abstract: In an disclosed film deposition method, after a film deposition-alteration step is carried out that includes a film deposition process where a Si containing gas is adsorbed on a wafer W and the adsorbed Si containing gas on the wafer is oxidized by supplying an O3 gas to the upper surface of the wafer, thereby producing a silicon oxide layer(s) by rotating a turntable on which the wafer is placed, and an alteration process where the silicon oxide layers) is altered by plasma, an alteration step where the silicon oxide layer(s) is altered by plasma while the Si containing gas is not supplied.

Abstract: A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.

Abstract: In a film deposition apparatus where bis (tertiary-butylamino) silane (BTBAS) gas is adsorbed on a wafer and then O3 gas is adsorbed on the wafer so that the BTBAS gas is oxidized by the O3 gas thereby depositing a silicon oxide film by rotating a turntable on which the wafer is placed, a laser beam irradiation portion is provided that is capable of irradiating a laser beam to an area spanning from one edge to another edge of a substrate receiving area of the turntable along a direction from an inner side to an outer side of the table.

Abstract: A packet relay device comprises a distribution processing unit classifying traffics into groups and users based on header information of packets received; a calculation unit calculating available frame rate of each user from peak frame rate, minimum frame rate, and weight information set for each user; a scheduling control unit updating a transmission schedule point-in-time calculated based on the available frame rate of each user, and judging which packet should be transmitted in accordance with the transmission schedule point-in-time updated; and a shaping unit updating a transmission schedule point-in-time calculated based on the peak frame rate of each user, and performing a shaping of packets at the peak frame rate on each user basis in accordance with the transmission schedule point-in-time updated; and a priority-control processing unit performing a strict priority control over transmission of packets of each group in correspondence with degree of priority of each group.

Abstract: A packet relay device comprises a distribution processing unit classifying traffics into groups and users based on header information of packets received; a calculation unit calculating available frame rate of each user from peak frame rate, minimum frame rate, and weight information set for each user; a scheduling control unit updating a transmission schedule point-in-time calculated based on the available frame rate of each user, and judging which packet should be transmitted in accordance with the transmission schedule point-in-time updated; and a shaping unit updating a transmission schedule point-in-time calculated based on the peak frame rate of each user, and performing a shaping of packets at the peak frame rate on each user basis in accordance with the transmission schedule point-in-time updated; and a priority-control processing unit performing a strict priority control over transmission of packets of each group in correspondence with degree of priority of each group.

Abstract: A bandwidth calculation section calculates a usable bandwidth from a communication amount of each user or a session connection time stored in a statistic management memory and minimum bandwidth information and maximum bandwidth information recorded in a bandwidth setting memory. The bandwidth calculation section allocates a large usable bandwidth to a user with a small communication amount or a short session connection time. A transmission control section performs transmission scheduling of packet information stored in a packet buffer based on a transmission scheduled time calculated from the usable bandwidth stored in a transmission scheduled time memory.

Abstract: There are provided a distribution unit for classifying traffics into group/user/class units, a transmission point-in-time processing unit for calculating available frame rate from peak-frame-rate/minimum-frame-rate/weight set for each user, and managing a transmission schedule point-in-time, a scheduling control unit for controlling a scheduling in accordance with the transmission schedule point-in-time, a user/group/line's each peak-frame-rate control unit for performing a shaping of the traffics at each peak frame rate of the user/group/line, and a priority-control processing unit for carrying out an inter-groups priority control.

Abstract: A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).

Abstract: A CVD apparatus (2) forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber (8) to accommodate a target substrate (W), a support member (20) to support the target substrate in the process chamber, a heater (12) to heat the target substrate supported by the support member, an exhaust section (39) to vacuum-exhaust the process chamber, and a supply section (40) to supply a gas into the process chamber. The supply section includes a first circuit (42) to supply a first gas of a silane family gas, a second circuit (44) to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit (46) to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.

Abstract: A CVD apparatus (2) forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber (8) to accommodate a target substrate (W), a support member (20) to support the target substrate in the process chamber, a heater (12) to heat the target substrate supported by the support member, an exhaust section (39) to vacuum-exhaust the process chamber, and a supply section (40) to supply a gas into the process chamber. The supply section includes a first circuit (42) to supply a first gas of a silane family gas, a second circuit (44) to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit (46) to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.

Abstract: A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).

Abstract: A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).

Abstract: A semiconductor memory device has a peripheral circuit area and a memory cell area on a main surface thereof. The semiconductor memory device includes a first well formed in the peripheral circuit area, a second well of a first conductivity type formed in the memory cell area, a third well of a second conductivity type formed in the memory cell area, and a device isolation structure formed in the memory cell area for isolating an element formed in the second well from an element formed in the third well. The second well of the first conductivity type has a depth shallower than a depth of the first well. The third well of the second conductivity type is equal in depth to the second well. The second and third wells are formed down to a level lower than the device isolation structure.

Abstract: A semiconductor memory having a plurality of memory cells includes a first terminal that becomes a power supply terminal for the semiconductor memory, a second terminal that becomes a ground terminal for the semiconductor memory, a third terminal for inputting a burn-in mode signal to place the semiconductor memory in a burn-in mode and a fourth terminal for inputting an external clock signal. The semiconductor memory further includes an address signal generation section that generates an address signal for selecting each of the plurality of memory cells based on counting of the clock signal while the burn-in mode signal is input. A data signal generation section generates a data signal based on the clock signal while the burn-in mode signal is input. A data writing section writes data of the data signal in the memory cells selected by the address signal.

Abstract: A semiconductor memory having a plurality of memory cells includes a first terminal that becomes a power supply terminal for the semiconductor memory, a second terminal that becomes a ground terminal for the semiconductor memory, a third terminal for inputting a burn-in mode signal to place the semiconductor memory in a burn-in mode and a fourth terminal for inputting an external clock signal. The semiconductor memory further includes an address signal generation section that generates an address signal for selecting each of the plurality of memory cells based on counting of the clock signal while the burn-in mode signal is input. A data signal generation section generates a data signal based on the clock signal while the burn-in mode signal is input. A data writing section writes data of the data signal in the memory cells selected by the address signal.