Abstract: A method of depositing a continuous TiN film on a substrate is provided. In the method, a continuous TiO2 film is deposited on a substrate, and then a continuous TiN film is deposited on the continuous TiO2 film. The TiN film is thicker than the TiO2 film.

Abstract: A film forming method includes supplying a first source gas containing a first metal element onto a substrate, supplying a second source gas containing a second metal element onto the substrate, supplying a reaction gas converted into plasma and containing a nonmetal element reacting with the first metal element and the second metal element to generate a first reaction product and a second reaction product, respectively, to the substrate, to generate a third reaction product containing the first metal element, the second metal element and the nonmetal element. A mixing ratio of the first metal element contained in the third reaction product is higher than that of the second metal element, and a crystallization temperature of the second reaction product is higher than that of the first reaction product.

Abstract: A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.

Abstract: It is provided a relay apparatus, comprising: a plurality of ports coupled to a network; a Layer 2 processing module for relaying, via the network, a frame comprising a Layer 2 header and a Layer 2 data segment, the Layer 2 data segment comprising a Layer 3 header and a Layer 3 data segment; and an output unit, wherein the module updates a value of a particular field of the Layer 3 header, uses a first characteristic value related to the Layer 3 header, which is stored in a given field, and a pre-update value and post-update value of the particular field to compute a second characteristic value related to the Layer 3 header, and updates the value of the given field from the first characteristic value to the second characteristic value, and wherein the output unit outputs the updated frame as an output destination of the updated frame.

Abstract: A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, includes a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed.

Abstract: A method of manufacturing a silicon oxide film is provided. In the method, a substrate having a metal film on a surface thereof is loaded in a reaction chamber, and supply of a hydrogen gas into the reaction chamber is started by a hydrogen gas supply unit after the step of loading the substrate in the reaction chamber. Then, supply of an oxidation gas into the reaction chamber is started by an oxidation gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber, and supply of a silicon-containing gas into the reaction chamber is started by a silicon-containing gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber.

Abstract: A method of manufacturing a silicon oxide film by using a film deposition apparatus is provided. The apparatus includes a turntable including a substrate receiving part on its upper surface, a first gas supply part to supply a first gas to the turntable in a first process area, and a second gas supply part arranged in a second process area apart from the first process area to supply a second gas. In the method, a silicon-containing gas is supplied from the first gas supply part as the first gas. A hydrogen gas and an oxidation gas are supplied from the second gas supply part as the second gas. The first gas is caused to adsorb on the substrate in the first process area, and the second gas is caused to react with the first gas adsorbed on the substrate in the second process area while rotating the turntable.

Abstract: In a disclosed film deposition method, after a film deposition—alteration step is carried out that includes a film deposition process where a Si containing gas is adsorbed on a wafer W and the adsorbed Si containing gas on the wafer is oxidized by supplying an O3 gas to the upper surface of the wafer, thereby producing a silicon oxide layer(s) by rotating a turntable on which the wafer is placed, and an alteration process where the silicon oxide layer(s) is altered by plasma, an alteration step where the silicon oxide layer(s) is altered by plasma while the Si containing gas is not supplied.

Abstract: A film deposition method using a film deposition apparatus, includes: a film deposition process step in which at least a substrate is mounted on at least one of the circular concave portions and a film is deposited on the substrate; and a particle reducing process step performed before or after the film deposition process step, in which particles in the vacuum chamber are reduced without mounting substrates on the circular concave portions, the particle reducing process step including, a step of supplying a first gas to the vacuum chamber; a step of generating plasma from the first gas by supplying high frequency waves to a plasma generating device provided for the vacuum chamber; and a step of exposing the plurality of circular concave portions, on each of which a substrate is not mounted, to the plasma while rotating the susceptor.

Abstract: A film deposition method using a film deposition apparatus, includes: a film deposition process step in which at least a substrate is mounted on at least one of the circular concave portions and a film is deposited on the substrate; and a particle reducing process step performed before or after the film deposition process step, in which particles in the vacuum chamber are reduced without mounting substrates on the circular concave portions, the particle reducing process step including, a step of supplying a first gas to the vacuum chamber; a step of generating plasma from the first gas by supplying high frequency waves to a plasma generating device provided for the vacuum chamber; and a step of exposing the plurality of circular concave portions, on each of which a substrate is not mounted, to the plasma while rotating the susceptor.

Abstract: A film deposition method includes steps of transferring a substrate having a pattern including a concave part into a vacuum chamber; supplying a first reaction gas to the substrate from a first reaction gas supplying part, thereby allowing the first reaction gas to be adsorbed on the substrate; supplying a second reaction gas that reacts with the first reaction gas to the substrate from a second reaction gas supplying part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and forming a reaction product of the first and the second reaction gases on the substrate; supplying an alteration gas to the substrate through an activated gas supplying part capable of activating the alteration gas; and supplying an etching gas to the substrate chamber through the activated gas supplying part under an environment where the reaction product is not formed.

Abstract: A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, includes a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed.

Abstract: In an disclosed film deposition method, after a film deposition-alteration step is carried out that includes a film deposition process where a Si containing gas is adsorbed on a wafer W and the adsorbed Si containing gas on the wafer is oxidized by supplying an O3 gas to the upper surface of the wafer, thereby producing a silicon oxide layer(s) by rotating a turntable on which the wafer is placed, and an alteration process where the silicon oxide layers) is altered by plasma, an alteration step where the silicon oxide layer(s) is altered by plasma while the Si containing gas is not supplied.

Abstract: A particle reducing method includes a step of supplying a first gas to a vacuum chamber in which a susceptor, formed by an insulating object and the surface of which is provided with a substrate mounting portion, is rotatably provided; a step of generating plasma from the first gas by supplying high frequency waves to a plasma generating device provided for the vacuum chamber; and a step of exposing the substrate mounting portion, on which a substrate is not mounted, to the plasma while rotating the susceptor.

Abstract: A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, includes a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed.

Abstract: A relay device of relaying a communication packet is disclosed, which comprises: an input module configured to receive the communication packet as an input; a buffer configured to have a plurality of queues and temporarily accumulated the received communication packet; a sorter configured to sort the received communication packet to one of the plurality of queues, depending on a specific value obtained by a predetermined function that gives an aggregate output from an input which is transfer information regarding transfer of the communication packet; and a band controller configured to control a bandwidth for each of the plurality of queues and output communication packets accumulated in the plurality of queues for transmission of the communication packets. This ensures the quality of service, while saving the capacity of the buffer used for the queues.

Abstract: A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.

Abstract: A film deposition method deposits a silicon oxide film on a substrate in which a concave portion is formed by supplying a silicon-containing gas to the substrate so that the silicon-containing gas is adsorbed on the substrate and by oxidizing the adsorbed silicon-containing gas with an oxidation gas. A gas-phase temperature in an atmosphere above the substrate to which the silicon-containing gas is supplied can be kept lower by an inactive gas supplied from a separation area that separates the silicon gas supply part and the oxidation gas supply part even if the substrate is heated to a temperature higher than a temperature that can decompose the silicon-containing gas. Accordingly, the silicon-containing gas can adsorb on the substrate without decomposing in the gas phase.

Abstract: A packet relay device comprises a distribution processing unit classifying traffics into groups and users based on header information of packets received; a calculation unit calculating available frame rate of each user from peak frame rate, minimum frame rate, and weight information set for each user; a scheduling control unit updating a transmission schedule point-in-time calculated based on the available frame rate of each user, and judging which packet should be transmitted in accordance with the transmission schedule point-in-time updated; and a shaping unit updating a transmission schedule point-in-time calculated based on the peak frame rate of each user, and performing a shaping of packets at the peak frame rate on each user basis in accordance with the transmission schedule point-in-time updated; and a priority-control processing unit performing a strict priority control over transmission of packets of each group in correspondence with degree of priority of each group.

Abstract: A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.