Abstract: A polycrystalline silicon layer as a passivation layer formed on a semiconductor single crystal layer in a semiconductor device and in which polycrystalline silicon layer contains 2 to 45 atomic percent of oxygen. This layer can be formed under accurate control by utilizing a mixed gas of nitrogen oxide as an oxygen supply source and a silicon compound as a silicon supply source is thermally decomposed. The polycrystalline silicon is constituted of grains comprising single crystals of silicon. Oxygen atoms are uniformly distributed in the grains. Substantially no SiO.sub.2 layer exists between the grains and the semiconductor single crystal layer.

Abstract: A semiconductor device including a substrate of semiconductor material having charge carriers of one conductivity type and a main region of opposite conductivity type. A ring of said opposite conductivity type is disposed around the main region and an auxiliary region of said opposite conductivity type is disposed on the opposite surface of the substrate. The said rings and the said auxiliary region are spaced from the main region by distances that permit the depletion region of the main region to reach the ring and the auxiliary region when the main region is reversed biased with respect to the substrate.

Abstract: A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semiconductor crystal and the exterior environment.

Abstract: A semiconductor integrated circuit, in which an isolation region with one conductivity type and a plurality of island regions with another conductivity type separated by the isolation region are provided, is disclosed. In this case, a high resistance polycrystalline semiconductor layer is formed to cover whole of a surface portion of a PN-junction formed between the isolation region and the island regions.

Abstract: A semiconductor device is provided having at least two semiconductor regions of opposite conductivity type and forming a planar-type PN junction. A field limiting ring is disposed spaced from the PN junction. A high-resistivity polycrystalline silicon layer covers the PN junction and the field limiting ring.