Abstract: There is provided a technique that includes: a mounting table configured to be capable of mounting a substrate on the mounting table; a heater located above the mounting table and configured to radiate heat rays toward the substrate mounted on the mounting table to heat the substrate; a process container disposed below the heater and configured to accommodate the mounting table, wherein at least a portion of the process container, which is located adjacent to the heater, is made of opaque quartz; and a sealer configured such that transmission of heat rays reflected from the substrate to the sealer is suppressed by the at least a portion of the process container and airtightness between the process container and the heater is maintained by a seal.

Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.

Abstract: In an automatic analysis device, it is possible during specimen analysis to add/deposit one rack at a time without stopping the analysis, and it is easy to ascertain the analysis sequence. The analyzer has an analysis module, a rack transport module for transporting a specimen rack in which a specimen container storing a specimen is loaded, and a control device. The rack transport module includes a rack supply part for supplying a specimen rack, a rack accommodating part for accommodating a specimen rack, a rack transport line for transporting a specimen rack supplied from the rack supply part, a dispensing line for transporting a specimen rack to the analysis module, and a rack rotor for transferring a specimen rack between the rack transport line and the dispensing line. Operation of the rack supply part for supplying a specimen rack can be stopped independently of the operation of the analysis module.

Abstract: There is included a process container; a gas supply system; and a coil provided with a section between a first grounding point and a second grounding point of the coil so as to be spirally wound a plurality of times along an outer periphery of the process container, wherein the coil is configured so that a coil separation distance, which is a distance from an inner periphery of the coil to an inner periphery of the process container, in a partial section of a first winding section, which is a section where the coil winds once along the outer periphery of the process container in a direction from the first grounding point toward the second grounding point, is longer than a coil separation distance in another partial section of the first winding section continuous with the partial section of the first winding section.

Abstract: A damping valve of the present invention includes: a partition wall body that is annular, and is inserted into a cylindrical body, is radially positioned only by the cylindrical body, and has an annular outer circumferential valve seat protruding axially from an axial one end and a port provided on an inner circumferential side of the outer circumferential valve seat; a valve stopper having an annular inner circumferential valve seat facing the one end of the partition wall body and having an outer diameter smaller than that of the outer circumferential valve seat; and an annular leaf valve that is interposed between the outer circumferential valve seat and the inner circumferential valve seat and is set to be open to both the inside and the outside to open and close the port, wherein the partition wall body includes an aligning portion that aligns the leaf valve with respect to the outer circumferential valve seat.

Abstract: A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.

Abstract: A seal device for a hydraulic apparatus according to the present invention includes an annular main piston split body (outer member), a sub piston split body (inner member) inserted into inside the main piston split body (outer member), and a seal ring accommodated in an annular groove provided in the outer circumference of the sub piston split body (inner member) and abutting on the other of the main piston split body (outer member) to prevent a liquid from passing through a gap between the main piston split body (outer member) and the sub piston split body (inner member), in which the seal ring has a self-lubricating property and has a cylindrical surface centered on an axis on an inner peripheral surface (bottom facing surface) facing a bottom of the annular groove.

Abstract: A shock absorber is provided. The shock absorber of the present invention includes a shock absorber main body, a damping passage, a primary damping force generation component, and a secondary damping force generation component. The shock absorber main body has an outer tube and a rod and is stretchable. The damping passage communicates operating chambers with each other provided in the shock absorber main body. The primary and secondary damping force generation components are provided in series with the damping passage. The secondary damping force generation component includes a secondary valve, an annular facing portion, and a valve stopper. The annular facing portion faces the secondary valve with an annular gap between the annular facing portion and the secondary valve. The valve stopper has elasticity to allow bending, and when the secondary valve bends and comes in contact with the valve stopper, restricts the secondary valve from bending.

Abstract: Valves of the present invention includes: a valve seat member equipped with a port and a seat portion surrounding an outlet end of the port; and an annular leaf valve whose inner periphery is immovably laid on top of the valve seat member and whose outer periphery to be seated on or spaced apart from the seat portion, wherein an external shape of the leaf valve is larger than an internal shape of a seat surface of the seat portion or larger than a virtual circle passing through an inner periphery of a seat surface of each circular arc shaped portion on the seat portion, and is smaller than an external shape of the seat surfaces or smaller than a virtual circle passing through an outer periphery of the seat surface of each circular arc shaped portion.

Abstract: There is provided a technique that includes: an upper container; a lower container provided below the upper container and constituting a processing chamber between the lower container and the upper container; a first seal portion disposed in a boundary region between the upper container and the lower container, the first seal portion including a first seal member and a second seal member; and a support that includes a support face disposed at a highest position below the upper container, is provided between the first seal member and the second seal member in a horizontal direction, and is made of a material harder than the first seal member and the second seal member.

Abstract: There is provided a valve and a shock absorber that are inexpensive and excellent in assemblability. A valve of the present embodiment includes: an annular valve body; a spacer that is stacked on the annular valve body and serves as a fulcrum of the bending of a free end of the annular valve body; and a valve stopper that faces the annular valve body in an axial direction on the spacer side of the annular valve body and regulates the bending of the annular valve body when the annular valve body bends and comes into contact therewith, wherein the valve stopper includes: a ring that has a thickness in the axial direction smaller than the thickness of the spacer, and is arranged on an inner circumference or an outer circumference of the spacer; and a stacked annular plate that is stacked on the spacer.

Abstract: A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.

Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.

Abstract: Described herein is a technique capable of suppressing sputtering on an inner peripheral surface of a process vessel when a process gas is plasma-excited in the process vessel. According to one aspect thereof, a substrate processing apparatus includes: a process vessel accommodating a process chamber where a process gas is excited into plasma; a gas supplier supplying the process gas into the process chamber; a coil wound around an outer peripheral surface of the process vessel and spaced apart therefrom, wherein a high frequency power is supplied to the coil; and an electrostatic shield disposed between the outer peripheral surface and the coil, wherein the electrostatic shield includes: a partition extending in a circumferential direction to partition between a part of the coil and the outer peripheral surface; and an opening extending in the circumferential direction and opened between another part of the coil and the outer peripheral surface.

Abstract: A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.

Abstract: Described herein is a technique capable of suppressing sputtering on an inner peripheral surface of a process vessel when a process gas is plasma-excited in the process vessel. According to one aspect thereof, a substrate processing apparatus includes: a process vessel accommodating a process chamber where a process gas is excited into plasma; a gas supplier supplying the process gas into the process chamber; a coil wound around an outer peripheral surface of the process vessel and spaced apart therefrom, wherein a high frequency power is supplied to the coil; and an electrostatic shield disposed between the outer peripheral surface and the coil, wherein the electrostatic shield includes: a partition extending in a circumferential direction to partition between a part of the coil and the outer peripheral surface; and an opening extending in the circumferential direction and opened between another part of the coil and the outer peripheral surface.

Abstract: A sealing device for hydraulic equipment according to the invention includes an outer member having an annular shape, an inner member inserted into the outer member, and a seal ring housed in an annular groove disposed in the outer circumference of the inner member and abutting on the outer member to prevent a liquid from passing through a gap between the outer member and the inner member. The annular groove of the inner member has a bottom portion including a recess for restraining axial displacement of the seal ring relative to the annular groove.

Abstract: There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and supplied with high-frequency power, wherein the coil is installed such that: a distance from an inner periphery of the coil to an inner periphery of the plasma vessel at a predetermined position on the coil is different from a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at another position on the coil; and a distance from the inner periphery of the coil to the inner periphery of the plasma vessel at a position at which an amplitude of a standing wave of a voltage applied to the coil is maximized is maximized.

Abstract: According to the present disclosure, there is provided a technique capable of repairing a damage due to a surface treatment of a metal material constituting a reaction vessel. According to one aspect of the technique of the present disclosure, there is provided a maintenance method including: (a) performing a substrate processing on a substrate arranged in a reaction vessel at a predetermined temperature by supplying a process gas to the substrate; and (b) performing an oxidation process of repairing a damage due to an alumite treatment on a surface of an aluminum material constituting at least a part of the reaction vessel at a temperature equal to or higher than the predetermined temperature by supplying an oxygen-containing gas into the reaction vessel in a state where there is no substrate in the reaction vessel.

Abstract: A turning method includes driving a first movement apparatus to locate a cutting edge of a turning tool at a first radial position; driving a second movement apparatus to move the turning tool in an axial direction to perform first turning with the cutting edge at the first radial position; driving the second movement apparatus to move the turning tool away from a workpiece in the axial direction after performing the first turning; calculating an error between the processed dimension and a target dimension; driving a third movement apparatus, which is configured to move the turning tool relative to the first movement apparatus in a radial direction, to locate the cutting edge of the turning tool at a second radial position to correct the error; and driving the second movement apparatus to move the turning tool in the axial direction to perform second turning at the second radial position.