Abstract: The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.

Abstract: A signal transmission circuit that can be operated stably even when a power supply of the circuit has a reduced voltage is provided as a shift register. A positive-side terminal (a node N11) of a bootstrap capacitor (C1) is connected to a gate of a charge transistor (T21) in a unit circuit of a subsequent stage. Consequently, the gate of the charge transistor in the unit circuit of the subsequent stage always is supplied with a high voltage of the positive-side terminal of the bootstrap capacitor in the unit circuit of its preceding stage, and therefore, a bootstrap capacitor (C2) in the unit circuit of the subsequent stage can be charged reliably up to a power supply voltage VDD even when the power supply voltage VDD is lowered.

Abstract: A method for manufacturing a solid-state imaging device includes forming a transfer channel portion and a light-receiving portion in a silicon substrate; forming a silicon oxide film on the silicon substrate; forming a silicon nitride film on the silicon oxide film, the silicon nitride film acting as a gate insulating film together with the silicon oxide film above the transfer channel portion and acting as an anti-reflection film above the light-receiving portion; forming a protection film on the silicon nitride film; forming a polysilicon film above the silicon nitride film via the protection film at least above the light-receiving portion; and etching the polysilicon film so as to form a transfer electrode above the transfer channel portion. The etching of the polysilicon film is carried out so that the polysilicon film is removed above the light-receiving portion while the protection portion remains.

Abstract: The consumed power of a MOS type sensor including a floating diffusion (FD) amplifier in each pixel is reduced. For this purpose, drain regions (regions for supplying a pulse voltage to FD portions through reset transistors) of unit pixels are connected to different drain lines row by row, so as to selectively supply a power pulse to each row. The power pulse is set to a HIGH level potential at least during a period when signal charge stored in the FD portion is reset and a period when the signal charge stored in the FD portion is detected.

Abstract: In a MOS type sensor including a floating diffusion (FD) amplifier in each pixel, the number of pulse lines is reduced, so as to improve the numerical aperture. For this purpose, a read pulse for a read transistor of a first pixel and a reset pulse for a reset transistor of a second pixel adjacent to the first pixel in a column direction are supplied through a common gate line; a LOW level potential of a drain line connected to a drain region (a region for supplying a pulse voltage to an FD portion through the reset transistor) of the first pixel is set to a potential higher than a potential depth of a photodiode of the first pixel in resetting the second pixel; and potential below the gate of the reset transistor of the first pixel obtained by applying a LOW level voltage to this gate is set to a potential higher than the LOW level potential of the drain line.

Abstract: A method for manufacturing a solid-state imaging device includes forming a transfer channel portion and a light-receiving portion in a silicon substrate; forming a silicon oxide film on the silicon substrate; forming a silicon nitride film on the silicon oxide film, the silicon nitride film acting as a gate insulating film together with the silicon oxide film above the transfer channel portion and acting as an anti-reflection film above the light-receiving portion; forming a protection film on the silicon nitride film; forming a polysilicon film above the silicon nitride film via the protection film at least above the light-receiving portion; and etching the polysilicon film so as to form a transfer electrode above the transfer channel portion. The etching of the polysilicon film is carried out so that the polysilicon film is removed above the light-receiving portion while the protection portion remains.

Abstract: The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.

Abstract: A capacitor of the present invention includes a hollow capacitor element prepared by winding a pair of flat electrodes with a separator sandwiched in-between in such a way that both ends of each respective electrode protrude in a direction opposite to each other, an electrode connecting member connected to each respective end surface of the electrode of the above, by metal plasma-spraying, welding, soldering and adhesion using a conductive adhesive, and a terminal for external connection is connected to the electrode connecting member. A cylindrical metal case contains the capacitor element together with a driving electrolyte and a sealing plate closing the opening of the metal case. A reduction in resistance of electrodes is made possible and, in addition, the capacitor can be made smaller in size and the number of the components can be decreased.

Abstract: The invention relates to an electric double layer capacitor for large capacity used in regeneration or electric power storage for various electric appliances and electric vehicles, and its manufacturing method. As the resin to be used in the current collector, by adding low softening point resin, polytetrafluoroethylene resin, latex resin or the like, the flexibility, thick coating performance and winding performance are improved. By preparing the electrode solution for making such current collector by using a high pressure dispersion machine, the capacity and density of the current collector can be enhanced substantially. According to this manufacturing method, the electric double layer capacitor may be further increased in size, increased in capacity and lowered in cost.

Abstract: A simple golf exercising aid device for notifying a golf player immediately after any head-up. The device comprises sound pickup means for an impacting sound caused by the impact of a club head against a golf ball, first means which compares, with a threshold value, a waveform within a predetermined frequency band out of the signals provided by the sound pickup means and outputs the result after a predetermined delay time, a motion sensor made up of an earth magnetic field sensor or an angular velocity sensor, for converting the motion of a golf player's head into an electrical signal, and second means which rectifies and then differentiates the output signal of said motion sensor, and which compares the differentiated output with a threshold value. Said motion sensor is mounted a portion of the golf player's head, and judgment output is provided when the timings of the outputs from the two means agree.

Abstract: A method of evaluating the characteristics of a solid state image sensor measures the unit cell output values of the sensor and assigns the output values to a predetermined rank, and counts the number of unit cells cumulatively in each rank, and then, by regarding the frequency distribution profile of the unit cell output values obtained in such way as the intrinsic electrical characteristics of the sensor, judges the picture quality of the sensor by using this frequency distribution profile.

Abstract: A projection picture tube includes a bulb, a sealing chamber disposed in contact with a front surface of a phosphor screen panel of the bulb and sealed with a liquid coolant, and a holding mechanism for holding the sealing chamber by the bulb. The sealing chamber includes a transparent member disposed in front of the phosphor screen panel to be spaced apart therefrom, a heat dissipation member which is disposed between the transparent member and the phosphor screen panel and part of which is in contact with the liquid coolant sealed in the sealing chamber, seal members respectively disposed between the heat dissipation member and the phosphor screen panel and between the heat dissipation member and the transparent member, and a holding piece for holding the transparent member on the heat dissipation member. The holding mechanism is coupled to the heat dissipation member.