Abstract: An object of the present invention is to provide a two-dimensional solid state imaging device which can realize speeding up of signal output. The two-dimensional solid state imaging device includes: a pixel region; a first capacitance element and a second capacitance element each of which is arranged for a different column of pixels and accumulates pixel signals of the corresponding column of pixels; a first horizontal signal line and a second horizontal signal line each of which transmits the pixel signals accumulated in a corresponding capacitance element; a common signal line connected to the horizontal signal lines; a scan timing generation unit and a switch unit which control readout of the pixel signals from the capacitance element to the horizontal signal line; and an external output timing unit and a switch unit which select the horizontal signal line and control output of the pixel signals from the selected horizontal signal line to the common signal line.

Abstract: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

Abstract: A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.

Abstract: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

Abstract: A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.

Abstract: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

Abstract: Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.

Abstract: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

Abstract: An object of the present invention is to provide a solid-state image sensor including a filter membrane that has excellent light resistance and can be thinned. A solid-state image sensor 1 having a plurality of pixels, wherein each of the plurality of pixels includes a filter membrane 21 for transmitting light of a predetermined color, and a photoelectric conversion unit 17 for converting the light transmitted through the filter membrane 21 into a charge; the filter membrane 21 is a single layer film composed of an inorganic material; and an optical thickness of the single layer film is smaller than a thickness equivalent to one half of a wavelength of the predetermined color, by a thickness corresponding to an amount of the light of the predetermined color absorbed by the inorganic material.

Abstract: A microcomputer outputs correction data. A shading correction circuit performs a shading correction to a digital image signal using the correction data outputted from the microcomputer. A YC processing circuit generates a video signal from the digital image signal having undergone the shading correction, performs processing such as a gamma correction to the generated video signal, and outputs the video signal having undergone the processing such as the gamma correction.

Abstract: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

Abstract: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

Abstract: An infrared sensor includes a plurality of reference pixel units 2 arranged in a matrix pattern and series capacitor elements 14 provided in a one-to-one correspondence with the reference pixel units 2. The reference pixel units 2 each include an output line 30, a reference capacitor element 13 connected via a switching element 17 between the output line and the ground, and a plurality of infrared-detecting capacitor elements 12 connected via associated switching elements 16 between the output line 30 and the ground. Each series capacitor element 14 is connected to the associated output line 30.

Abstract: Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.

Abstract: A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two ?/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The ?/4 multilayer films and spacer layer are composed of inorganic materials.

Abstract: A solid-state imaging device includes: a pixel unit which is composed of a plurality of pixel circuits arranged in a matrix, each pixel circuit outputting an analog signal by performing photoelectric conversion; an AD conversion circuit 15a provided for each of columns which sequentially converts a plurality of analog signals outputted from a plurality of ones of the pixel circuits in the column into a plurality of digital signals; a memory circuit 15b provided for each column which includes memories 32 and 33 and performs, in parallel, a process of storing each of the digital signals in one of the memories 32 and 33 and a process of outputting a digital signal stored in advance in the other; and data buses 17 connected to the memory circuit 15b in each column.

Abstract: An infrared sensor includes a plurality of reference pixel units 2 arranged in a matrix pattern and series capacitor elements 14 provided in a one-to-one correspondence with the reference pixel units 2. The reference pixel units 2 each include an output line 30, a reference capacitor element 13 connected via a switching element 17 between the output line and the ground, and a plurality of infrared-detecting capacitor elements 12 connected via associated switching elements 16 between the output line 30 and the ground. Each series capacitor element 14 is connected to the associated output line 30.

Abstract: A solid-state imaging device includes: an imaging portion in which a plurality of pixels for photoelectrically converting incident light are arranged so as to form a plural kinds of pixel lines having different color arrangements; a memory in which pixel signals obtained from the pixels of at least one line in the imaging portion are stored; an output signal line into which the pixel signals stored in the memory are read out; and an output portion from which signals of the output signal line are output. Pixel signals obtained from non-adjacent pixels of a first color in one line are read out into the output signal lines sequentially, and then pixel signals obtained from non-adjacent pixels of a second color are read out into the output signal lines sequentially. Pixel signals of the same color are output sequentially, so that it is not necessary to operate color selection switch for every pixel signals at high speed. Furthermore, it is possible to suppress the mixing of adjacent colors.

Abstract: The present invention aims to provide a solid-state imaging apparatus that realizes less leakage current, high image quality and low noise during the driving operation, and manufacturing method for the same. A MOS type imaging apparatus 1 includes an imaging region 10 and a driving region 20 both formed on a p-type silicon substrate (hereinafter called an “Si substrate”) 31. The imaging region 10 includes six pixels 11 to 16 disposed in a shape of a matrix having 2 rows and 3 columns. The driving region 20 includes a timing generation circuit 21, a vertical shift resistor 22, a horizontal shift resistor 23, a pixel selection circuit 24, and so on. All transistors included in the pixels 11 to 16 in the imaging region and the circuits 21 to 24 in the driving circuit region 20 are of n-channel MOS type.

Abstract: With the use of the MOS-type solid-state imaging device, it is possible, by extending the period during which the VDD voltage rises from Low level to High level, that the gate voltage of the resetting unit does not fluctuate to have a positive electric potential due to the coupling capacitance between the VDD power and the gate of the resetting unit, unlike the conventional case. Consequently, the electrons necessary for rendering the accumulation unit non-selectable do not flow from the accumulation unit to the VDD power. This prevents the level of the electric potential in the accumulation unit of non-selectable row from becoming positive. Also, the detecting unit is not switched on, which prevents the error of selecting a non-selectable row.