Abstract: A pixel area of a megapixel solid-state color imaging device is divided into unit areas for pixel adding and all the pixels for the same color are added together in each unit area. Accordingly, the percentage of utilized pixels is raised to 100% and aliasing noise to low frequencies in a high-frequency video signal is greatly suppressed by a spatial LPF (low pass filter) effect of the pixel addition in the area units.

Abstract: An optical interference filter whose major component is a film member. The film member includes a plurality of window regions arranged discretely in a surface direction selectively transmit, using an effect of optical interference, light having a waveband that substantially belongs to a visible spectrum, the plurality of window regions being arranged discretely in the surface direction, and one or more boundary regions selectively transmit, using the effect of the optical interference, light having a waveband that substantially belongs to an invisible spectrum excluding the visible spectrum, the one or more the boundary regions being located between adjacent window regions.

Abstract: In the case where a subject is captured with a high-luminance light, such as sunlight, for a background, a phenomenon that a portion of the high-luminance subject is detected as a no-signal level is prevented. The solid-state imaging device includes: a photoelectric transducer PD which converts incident light to charges; a voltage level detection circuit 50 in which pixel units 10an1 and 10bn1, each having a voltage conversion amplifying transistor Q13a which outputs a voltage by converting the charges accumulated in the photoelectric transducer PD, are arranged one-dimensionally or two-dimensionally, and which detects a pixel output voltage outputted from each of the pixel units to the common column signal line Ln; and a column signal processing circuit 80 which receives a logic output voltage of the voltage level detection circuit 50 and the pixel output voltage and which outputs a voltage to a horizontal output circuit 90.

Abstract: In each pixel of a MOS-type solid-state imaging device, a plurality of first signals and one or more second signals are accumulated in a plurality of storage areas in a storage unit during driving. Here, each of the plurality of first signals corresponds to a light receiving signal (light receiving signal on which noise is superimposed) which is transmitted from a light receiving unit each time a switching unit is in a closed state, and each of the one or more second signals is a signal (noise such as dark-current noise, fixed pattern noise, and the like) as a voltage of a signal readout path when the switching unit is in an open state. Also, in the solid-state imaging device of the present invention, each of the one or more second signals in the storage unit of each image pixel is in a state of being physically or temporally separated from each of the plurality of first signals.

Abstract: An infrared sensor includes a series capacitor element and a reference capacitor element each exhibiting a predetermined capacitance value; an infrared-detecting capacitor element whose capacitance value varies depending on an intensity of infrared light incident on the element; and an output node being a node at which a first terminal of the series capacitor element, a first terminal of the reference capacitor element and a first terminal of the infrared-detecting capacitor element are connected to one another. The intensity of infrared light is output as a potential difference between the reference potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the reference capacitor element and the detection potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the infrared-detecting capacitor element.

Abstract: A solid-state imaging device that enables more images to be photographed and a reading time to be shortened by effectively using storage cells is provided. By combining pieces of information which correspond to signal charges output from a photoelectric converter and are sequentially stored in storage cells, it is possible to store more pieces of information than the number of storage cells. Also, by reading the combined information stored in one storage cell, it is possible to read more pieces of information by a single reading operation.

Abstract: A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.

Abstract: A noise reduction circuit receives, as an input signal, a voltage difference between two different signals. The noise reduction circuit includes: an amplifier circuit for amplifying the two different signals; a voltage difference detection circuit for detecting a voltage difference between the two different signals amplified by the amplifier circuit; and an electric charge accumulation circuit section or a voltage adding circuit. The electric charge accumulation circuit section accumulates, a predetermined number of times, an electric charge corresponding to the voltage difference detected by the voltage difference detection circuit and combines the accumulated electric charges to output the resultant electric charge. The voltage adding circuit adds, a predetermined number of times, the voltage difference detected by the voltage difference detection circuit.

Abstract: An AD converter includes an analog data storing unit, a first DA converter for converting an input digital data into a first analog reference voltage which varies within a first voltage range in a range of every possible signal voltage of the input analog data, a second DA converter for converting the input digital data into a second analog reference voltage which varies within a second voltage range in the range of every possible signal voltage of the input analog data, a first comparator for comparing the input analog data with the first reference voltage, a second comparator for comparing the input analog data with the second reference voltage and a digital data storing unit for storing a digital data corresponding to a point of time when a change of state occurs in the comparison results of each of the first and second comparators.

Abstract: A solid-state imaging device includes a plurality of pixels arranged two-dimensionally. Each pixel includes a photoelectric converter (2) for converting incident light to a charge, and a gray filter (6a, 6b, 6c) having a visible light transmittance that is different depending on the photoelectric converter (2). According to this construction, the plurality of pixels have different sensitivities to incident light. By combining pixel signals obtained from three pixels having different sensitivities, a wider dynamic range can be achieved.

Abstract: Provided is a solid-state imaging device that can perform a high-speed imaging, with appropriate number of pixels maintained. A plurality of pixels are arranged in a matrix in the solid-state imaging device. Each pixel includes a plurality of signal charge holding units that hold signal charges output from a photo diode. A write target switching unit selects the signal charge holding units so that signal charges output at different time points are written to the signal charge holding units, respectively. A read target switching unit switches between signal charge holding units from which to read a signal charge.

Abstract: A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.

Abstract: A solid-state imaging device is provided in which sensitivity is prevented from lowering even when signals of pixels are mixed. The solid-state imaging device includes a plurality of pixel units each of which has a photoelectric conversion element, and is capable of summing signals corresponding to respective outputs of the photoelectric conversion elements of the pixel units. The device includes: a plurality of capacitors, each of which individually accumulates electric charges corresponding to a signal outputted from the associated photoelectric conversion element; and a plurality of MOS transistors which are alternately connected with the associated capacitor. By disconnecting the MOS transistor, the electric charges of the signal outputted from each of the photoelectric conversion elements are accumulated in each associated capacitor, and by conducting the MOS transistors to sum the signals of the pixel units, the capacitors are connected in series.

Abstract: A solid state imaging apparatus includes a plurality of pixels two-dimensionally arranged in the row direction and the column direction, and every two of the plurality of pixels that are adjacent to each other in the row direction or the column direction include color filters of different colors, respectively. A signal mixture circuit is provided in each same-row and same-color pixel group. Each said same-row and same-color pixel group consisting of ones of the plurality of pixels which are included in a pixel mixture unit to be a subject of pixel signal mixture, which are located in the same row, and which include color filters of the same color. The signal mixture circuit includes a combination of a capacitor and a transmission switch, stores pixel signals from pixels included in a same-row and same-color pixel group and mixes the signals together.

Abstract: A photodetector includes a semiconductor substrate having photo-cells (1a, 1b, 1c). Each photo-cell is provided with a filter layer 20 that transmits light in a wavelength range predetermined for the photo-cell, and a photoelectric converter 17 that generates a signal charge according to an intensity of the light transmitted through the filter layer 20. Thickness (ta, tb, tc) of the filter layers 20 are corresponding to the wavelength ranges predetermined for respective photo-cells. By such a structure, it is possible to provide cost effective photodetectors that can be manufactured without managing materials for pigments and dyestuff for different colors when making color filters.

Abstract: A solid-state imaging device 101 is composed of a transparent film 204, a color filter 205, a planarizing film 207, and a plurality of microlenses 208 that are sequentially formed on a semiconductor substrate 201. A photodiode 202 is formed in a surface of the semiconductor substrate 201 that is closer to the transparent film 204. A light shielding film 203 is formed in a surface of the transparent film 204 that is closer to the semiconductor substrate 201. Color filters 205 respectively corresponding to two adjacent pixels are partitioned by a light shielding wall 206. The light shielding wall 206 is a ?/4 multilayer film that reflects visible light.

Abstract: A semiconductor device has, on a single substrate, a semiconductor circuit portion and a hollow capacitor portion including a pair of counter electrodes and a hollow part located between the counter electrodes. The hollow part of the hollow capacitor portion is surrounded by an insulating film, and a through hole is formed in the insulating film to communicate with the hollow part. The top surface of the insulating film covering the hollow part is planarized. Part of the insulating film located to the lateral sides of the hollow part supports the other part thereof located on the hollow part and upper one of the counter electrodes.

Abstract: An infrared sensor includes a series capacitor element and a reference capacitor element each exhibiting a predetermined capacitance value; an infrared-detecting capacitor element whose capacitance value varies depending on an intensity of infrared light incident on the element; and an output node being a node at which a first terminal of the series capacitor element, a first terminal of the reference capacitor element and a first terminal of the infrared-detecting capacitor element are connected to one another.

Abstract: A manufacturing method of a solid-state imaging device prevents generation of a space due to insufficient filling of a conductive material. Materials constituting a multilayer film 41 are sequentially deposited on a semiconductor substrate, and portions respectively included in a plug formation intended region and a surrounding region that surrounds the plug formation intended region are removed from the deposited multilayer film 41. Next, the plug formation intended region and the surrounding region from which the portions have been removed is refilled with a single insulating material, and a hole is formed on the plug formation intended region by etching. Then, the formed hole is filled with a conductive material to therefore form a plug.

Abstract: A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.