Abstract: A semiconductor device includes a first switching element; a second switching element; a first metal member; a second metal member; a first terminal that has a potential on a high potential side; a second terminal that has a potential on a low potential side; a third terminal that has a midpoint potential; and a resin part. A first potential part has potential equal to potential of the first terminal. A second potential part has potential equal to potential of the second terminal. A third potential part has potential equal to potential of the third terminal. A first creepage distance between the first potential part and the second potential part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part and a third creepage distance between the second potential part and the third potential part.

Abstract: A problem to be solved is to provide a lead frame and a power module having high material yield. A lead frame includes a plurality of first leads extending to one side of an area in which a semiconductor device is disposed in a planar view; a plurality of second leads extending to another side that is opposite the one side of the area in which the semiconductor device is disposed in a planar view; a third lead arranged outside of one of the plurality of first leads positioned at an edge of the plurality of first leads in a planar view; and a wiring part that is connected to the third lead, acts as a part of a guide frame of the plurality of first leads, the plurality of second leads, and the third lead, and acts as a wiring connected to the third lead after parts of the guide frame other than the part of the guide frame have been cut off.

Abstract: A semiconductor module has a structure in which a semiconductor device, an insulating sheet, and a cooler are stacked on each other. The semiconductor device includes a semiconductor element, a heat transfer plate that is connected to the semiconductor element, and a resin molding that seals the semiconductor element and the heat transfer plate. A side surface of the resin molding is inclined away from a center of the resin molding relative to a perpendicular direction to a contact surface of the resin molding that is in contact with the insulating sheet. An angle of inclination of the side surface relative to the perpendicular direction is 3 degrees or larger and 17 degrees or smaller.

Abstract: A semiconductor device includes a substrate, a semiconductor element, a terminal and a solder outflow prevention part. The semiconductor element is fixed on one side of the substrate via a first solder layer. The terminal that is fixed on the one side of the substrate via a second solder layer. The solder outflow prevention part is formed between the semiconductor element and the terminal in the one side of the substrate and is configured to prevent the first solder layer and the second solder layer from outflowing. A distance between the solder outflow prevention part and the semiconductor element is longer than a thickness of the first solder layer.

Abstract: A semiconductor module has a structure in which a semiconductor device, an insulating sheet, and a cooler are stacked on each other. The semiconductor device includes a semiconductor element, a heat transfer plate that is connected to the semiconductor element, and a resin molding that seals the semiconductor element and the heat transfer plate. A side surface of the resin molding is inclined away from a center of the resin molding relative to a perpendicular direction to a contact surface of the resin molding that is in contact with the insulating sheet. An angle of inclination of the side surface relative to the perpendicular direction is 3 degrees or larger and 17 degrees or smaller.

Abstract: A semiconductor device includes: opposed first and second metal plates; a plurality of semiconductor elements each interposed between the first metal plate and the second metal plate; a metal block interposed between the first metal plate and each of the semiconductor elements; a solder member interposed between the first metal plate and the metal block and connecting the first metal plate to the metal block; and a resin molding sealing the semiconductor elements and the metal block. A face of the first metal plate, which is on an opposite side of a face of the first metal plate to which the metal block is connected via the solder member, is exposed from the resin molding. The first metal plate has a groove formed along an outer periphery of a region in which the solder member is provided, the groove collectively surrounding the solder member.

Abstract: According to the disclosure, a lead frame is provided, which includes: a first island and a second island that are arranged side by side; an outer peripheral frame; first leads that extend in a second direction perpendicular to the first direction; second leads that extend in the second direction; a first coupling portion that couples the first leads to the frame; a second coupling portion that couples the second leads to the frame; an intermediate portion formed between the first and second coupling portions in the first direction such that it extends in the second direction to terminate before the space between the first and second islands; and a deformation restraining portion formed or provided in at least one of the first leads, the second leads, the first and the second coupling portions and configured to restrain deformations of the first and second leads during a molding process.

Abstract: In a semiconductor device, a second heat sink and a third heat sink are electrically connected by a joint portion in an alignment direction in which a first switching element and a second switching element are aligned. A second power-supply terminal is disposed in the alignment direction in a region between a first power-supply terminal and an output terminal and between the second heat sink and the third heat sink. In an encapsulation resin body, at least one of a shortest distance between a first potential portion at same potential as the first power-supply terminal and a third potential portion at same potential as the output terminal and a shortest distance between a second potential portion at same potential as the second power-supply terminal and the third potential portion is shorter than a shortest distance between the first potential portion and the second potential portion.

Abstract: A semiconductor device includes a transistor, a package in which the transistor is molded, a first heatsink plate, and a second heatsink plate. The first heatsink plate is bonded to a first surface of the package, and is fixed to one surface of the transistor in the package. The second heatsink plate is bonded to a second surface of the package so as to be opposed to the first heatsink plate, and is fixed to the transistor in the package. The second surface is opposite to the first surface. A bonded surface of the first heatsink plate with the plastic body includes a high stress area in which tensile stress equal to or higher than a predetermined stress value is generated. A plurality of grooves are provided in the high stress area.

Abstract: A semiconductor device includes first and second semiconductor elements and first and second conductive members. A first electrode on the first semiconductor element is bonded to a first stack part of the first conductive member by a first bonding layer. A second electrode on the second semiconductor element is bonded to a second stack part of the second conductive member by a second bonding layer. A first joint part of the first conductive member is bonded to a second joint part of the second conductive member by an intermediate bonding layer. A first surface of the first joint part facing the second joint part, a side surface of the first joint part continuous from the first surface, a second surface of the second joint part facing the first joint part, and a side surface of the second joint part continuous from the second surface are covered by nickel layers.

Abstract: A semiconductor device includes: a semiconductor element; a joined member that is joined to the semiconductor element and includes a nickel film; and a joining layer that is joined to the joined member and contains 2.0 wt % or higher of copper, in which the joining layer includes a solder portion and a Cu6Sn5 portion, base metal of the solder portion contains at least tin as a constituent element and contains elemental copper, and the Cu6Sn5 portion is in contact with the nickel film.

Abstract: A method of manufacturing a semiconductor device includes: arranging a solder material containing at least tin, between a semiconductor element and a joined member provided with a nickel layer and a copper layer, such that the solder material is in contact with the copper layer, the nickel layer being provided on a surface of the joined member, and the copper layer being provided on at least a portion of a surface of the nickel layer; and melting and solidifying the solder material to form Cu6Sn5 on the surface of the nickel layer using tin of the solder material and the copper layer.

Abstract: A semiconductor module includes a semiconductor device; a metal plate portion that includes a first surface on a side of the semiconductor device and has a fastening portion at an end thereof; a molded portion that is formed by molding a resin on the semiconductor device and the metal plate portion, a cooling plate portion that is a separate member from the metal plate portion, is provided on a side opposite to the first surface on the side of the semiconductor device, and includes fins on a side opposite to the side of the metal plate portion; wherein the fastening portion of the metal plate portion is exposed out of the molded portion, and the cooling plate portion includes a fastening portion at a position that corresponds to a position of the fastening portion of the metal plate portion.

Abstract: The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device has a plurality of power units placed in parallel in a predetermined direction, wherein each of the power units includes a plurality of semiconductor elements placed on a metal plate having predetermined gaps with each other. The semiconductor elements of each of the two power units include a near-sided semiconductor element that is closer to an inlet of the resin among the two semiconductor elements having the predetermined gap therebetween. A structure is positioned on a passage and downstream in a resin flow direction relative to a predetermined position that corresponds to end parts of the near-sided semiconductor elements. The structure is a joint to connect the two power units placed adjacent to each other in the predetermined direction, and to be integrally sealed with the resin, along with the power unit.

Abstract: A power module according to the present invention includes a semiconductor device; a base part formed from an electrically conductive material on which the semiconductor device is mounted; a signal lead part formed from the same material as the base part, the signal lead part being electrically connected to the semiconductor device; and a thin plate lead part formed from the same material as the base part such that it is formed seamlessly from the base part and it is thinner than the base part, the thin plate lead part extending on the same side as the signal lead part with respect to the base part, wherein the thin plate lead part is electrically connected to a predetermined terminal of the semiconductor device via the base part such that it forms a potential detecting terminal for detecting a potential of the predetermined terminal of the semiconductor device.

Abstract: A semiconductor apparatus is disclosed, which includes a semiconductor element provided on a plane; a sealing resin that seals the semiconductor element; a terminal that is electrically connected to the semiconductor element and includes a part that projects from a predetermined surface of the sealing resin; and a concave portion that is recessed toward a side of the semiconductor element from the predetermined surface, when viewed in a direction perpendicular to the plane. A side of the concave portion on the side of the semiconductor element includes a rounded shape, when viewed in the direction perpendicular to the plane.

Abstract: A semiconductor device includes a semiconductor element in the form of a flat plate that has opposed first and second surfaces, an insulating layer that covers control wiring located on the first surface side of the semiconductor element, a metal block that is bonded to the first surface side of the semiconductor element via a solder layer, and a protective film that is formed between the metal block and the insulating layer, the protective film having a hardness equal to or greater than a hardness of the metal block. When viewed from the first surface side, the protective film is formed in an area at least including a position where an edge portion of the metal block and the control wiring cross each other.

Abstract: This semiconductor device includes: a first metal plate; a plurality of semiconductor elements mounted on the first metal plate; a spacer that is connected to a surface on the opposite side to the surface where the plurality of semiconductor elements are mounted on the first metal plate; a second metal plate that is connected to a surface on the opposite side to the surface where the spacer is connected to the semiconductor elements; and an encapsulating resin between the first plate and the second plate that seals the plurality of semiconductor elements. Stress due to contraction that occurs in the encapsulating resin between the plurality of semiconductor elements is relaxed to a greater extent than stress due to contraction that occurs in the encapsulating resin in the locations other than the location between the plurality of semiconductor devices.

Abstract: A power module is disclosed that includes a semiconductor element, a first cooling member and a second cooling member configured to sandwich the semiconductor element therebetween, a frame member configured to support the semiconductor element between the first cooling member and the second cooling member and molded resin disposed between the first cooling member and the second cooling member, wherein the frame member includes an adjusting member which adjusts a distance between the first cooling member and the second cooling member.

Abstract: A semiconductor apparatus is disclosed, which includes a semiconductor element provided on a plane; a sealing resin that seals the semiconductor element; a terminal that is electrically connected to the semiconductor element and includes a part that projects from a predetermined surface of the sealing resin; and a concave portion that is recessed toward a side of the semiconductor element from the predetermined surface, when viewed in a direction perpendicular to the plane. A side of the concave portion on the side of the semiconductor element includes a rounded shape, when viewed in the direction perpendicular to the plane.