Abstract: A semiconductor device includes a link portion that connects a second heat sink to a third heat sink via a solder. The solder is arranged on a connecting surface of a base portion of the link portion, which is orthogonal to a plate thickness direction of the base portion, in a direction perpendicular to first and second surfaces. The link portion has a rib that protrudes from the base portion in a direction orthogonal to the first and second surfaces, and a thickness of a portion where the rib is provided is equal to or less than the thickness of the corresponding heat sink. The rib is provided across an entire length of a first region that is sealed by a sealing resin body and that is between the second and the third heat sinks, in an alignment direction of a first heat sink and the third heat sink.

Abstract: A semiconductor device includes a plurality of semiconductor elements each having a front surface and a back surface; a front surface-side heatsink that is positioned on a front-surface side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a back surface-side heatsink that is positioned on a back surface-side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a sealing material that covers the semiconductor device except for a front surface of the front surface-side heatsink and a back surface of the back surface-side heatsink; a primer that is coated on at least one of the front surface-side heatsink and the back surface-side heatsink and improves contact with the sealing member; and a protruding portion positioned between the plurality of semiconductor elements, on at least one of the back surface of the front surface-side heatsink and the front surface of the back surface-side heatsink.

Abstract: The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device has a plurality of power units placed in parallel in a predetermined direction, wherein each of the power units includes a plurality of semiconductor elements placed on a metal plate having predetermined gaps with each other. The semiconductor elements of each of the two power units include a near-sided semiconductor element that is closer to an inlet of the resin among the two semiconductor elements having the predetermined gap therebetween. A structure is positioned on a passage and downstream in a resin flow direction relative to a predetermined position that corresponds to end parts of the near-sided semiconductor elements. The structure is a joint to connect the two power units placed adjacent to each other in the predetermined direction, and to be integrally sealed with the resin, along with the power unit.

Abstract: According to the disclosure, a lead frame is provided, which includes: a first island and a second island that are arranged side by side; an outer peripheral frame; first leads that extend in a second direction perpendicular to the first direction; second leads that extend in the second direction; a first coupling portion that couples the first leads to the frame; a second coupling portion that couples the second leads to the frame; an intermediate portion formed between the first and second coupling portions in the first direction such that it extends in the second direction to terminate before the space between the first and second islands; and a deformation restraining portion formed or provided in at least one of the first leads, the second leads, the first and the second coupling portions and configured to restrain deformations of the first and second leads during a molding process.

Abstract: A semiconductor device includes a plurality of semiconductor elements each having a front surface and a back surface; a front surface-side heatsink that is positioned on a front-surface side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a back surface-side heatsink that is positioned on a back surface-side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a sealing material that covers the semiconductor device except for a front surface of the front surface-side heatsink and a back surface of the back surface-side heatsink; a primer that is coated on at least one of the front surface-side heatsink and the back surface-side heatsink and improves contact with the sealing member; and a protruding portion positioned between the plurality of semiconductor elements, on at least one of the back surface of the front surface-side heatsink and the front surface of the back surface-side heatsink.

Abstract: A semiconductor device includes a first semiconductor element; a first thick plate portion that is electrically connected to an electrode on a lower surface side of the first semiconductor element, and is formed by a conductor; a second semiconductor element that is arranged such that a main surface of the second semiconductor element faces a main surface of the first semiconductor element; a second thick plate portion that is electrically connected to an electrode on a lower surface side of the second semiconductor element, and is formed by a conductor; a third thick plate portion that is electrically connected to an electrode on an upper surface side of the first semiconductor element, and is formed by a conductor; a fourth thick plate portion that is electrically connected to an electrode on an upper surface side of the second semiconductor element, and is formed by a conductor; a first thin plate portion that is provided on the second thick plate portion, is formed by a conductor, and is thinner than the

Abstract: A power module configured to arrange a first electrode on a surface of which a first switching device is bonded, a second electrode on a surface of which a second switching device is bonded, and a third electrode by stacking the first electrode, the first switching device, the second electrode, the second switching device, and the third electrode in this order from the bottom in a stacking direction, characterized by first through third electrode pieces each connected to the first through third electrodes, first and second signal lines each connected to the first and second switching devices, wherein the first through third electrode pieces and the first and second signal lines are provided extending outward in the same plane as the second electrode.

Abstract: A semiconductor device includes a link portion that connects a second heat sink to a third heat sink via a solder. The solder is arranged on a connecting surface of a base portion of the link portion, which is orthogonal to a plate thickness direction of the base portion, in a direction perpendicular to first and second surfaces. The link portion has a rib that protrudes from the base portion in a direction orthogonal to the first and second surfaces, and a thickness of a portion where the rib is provided is equal to or less than the thickness of the corresponding heat sink. The rib is provided across an entire length of a first region that is sealed by a sealing resin body and that is between the second and the third heat sinks, in an alignment direction of a first heat sink and the third heat sink.

Abstract: This semiconductor device includes: a first metal plate; a plurality of semiconductor elements mounted on the first metal plate; a spacer that is connected to a surface on the opposite side to the surface where the plurality of semiconductor elements are mounted on the first metal plate; a second metal plate that is connected to a surface on the opposite side to the surface where the spacer is connected to the semiconductor elements; and an encapsulating resin between the first plate and the second plate that seals the plurality of semiconductor elements. Stress due to contraction that occurs in the encapsulating resin between the plurality of semiconductor elements is relaxed to a greater extent than stress due to contraction that occurs in the encapsulating resin in the locations other than the location between the plurality of semiconductor devices.

Abstract: A semiconductor module which includes a semiconductor device; a wiring member that is connected to the semiconductor device; a cooling plate that includes a first surface on a side of the semiconductor device and a second surface on a side opposite to the first surface and has a fastening portion at an end thereof in a first direction; and a molded portion that is formed by molding a resin on the semiconductor device, the wiring member and the cooling plate, wherein the fastening portion is exposed out of the molded portion, and a terminal portion of the wiring member is exposed out of the molded portion such that the terminal portion of the wiring member extends in a second direction which is substantially perpendicular to the first direction.

Abstract: A power module configured to arrange a first electrode on a surface of which a first switching device is bonded, a second electrode on a surface of which a second switching device is bonded, and a third electrode by stacking the first electrode, the first switching device, the second electrode, the second switching device, and the third electrode in this order from the bottom in a stacking direction, characterized by first through third electrode pieces each connected to the first through third electrodes, first and second signal lines each connected to the first and second switching devices, wherein the first through third electrode pieces and the first and second signal lines are provided extending outward in the same plane as the second electrode.

Abstract: A semiconductor device includes a semiconductor element in the form of a flat plate that has opposed first and second surfaces, an insulating layer that covers control wiring located on the first surface side of the semiconductor element, a metal block that is bonded to the first surface side of the semiconductor element via a solder layer, and a protective film that is formed between the metal block and the insulating layer, the protective film having a hardness equal to or greater than a hardness of the metal block. When viewed from the first surface side, the protective film is formed in an area at least including a position where an edge portion of the metal block and the control wiring cross each other.

Abstract: A semiconductor module comprises: a metal block; a semiconductor device installed via a solder layer in a semiconductor device installation area on a surface of the metal block; and a molded portion formed by molding a resin on the metal block and the semiconductor device; wherein the surface of the metal block includes a plating area and a roughened area, and the semiconductor device installation area is provided in the plating area.

Abstract: A problem to be solved is to provide a lead frame and a power module having high material yield. A lead frame includes a plurality of first leads extending to one side of an area in which a semiconductor device is disposed in a planar view; a plurality of second leads extending to another side that is opposite the one side of the area in which the semiconductor device is disposed in a planar view; a third lead arranged outside of one of the plurality of first leads positioned at an edge of the plurality of first leads in a planar view; and a wiring part that is connected to the third lead, acts as a part of a guide frame of the plurality of first leads, the plurality of second leads, and the third lead, and acts as a wiring connected to the third lead after parts of the guide frame other than the part of the guide frame have been cut off.

Abstract: A semiconductor device includes a first semiconductor element; a first thick plate portion that is electrically connected to an electrode on a lower surface side of the first semiconductor element, and is formed by a conductor; a second semiconductor element that is arranged such that a main surface of the second semiconductor element faces a main surface of the first semiconductor element; a second thick plate portion that is electrically connected to an electrode on a lower surface side of the second semiconductor element, and is formed by a conductor; a third thick plate portion that is electrically connected to an electrode on an upper surface side of the first semiconductor element, and is formed by a conductor; a fourth thick plate portion that is electrically connected to an electrode on an upper surface side of the second semiconductor element, and is formed by a conductor; a first thin plate portion that is provided on the second thick plate portion, is formed by a conductor, and is thinner than the

Abstract: A power module according to the present invention includes a semiconductor device; a base part formed from an electrically conductive material on which the semiconductor device is mounted; a signal lead part formed from the same material as the base part, the signal lead part being electrically connected to the semiconductor device; and a thin plate lead part formed from the same material as the base part such that it is formed seamlessly from the base part and it is thinner than the base part, the thin plate lead part extending on the same side as the signal lead part with respect to the base part, wherein the thin plate lead part is electrically connected to a predetermined terminal of the semiconductor device via the base part such that it forms a potential detecting terminal for detecting a potential of the predetermined terminal of the semiconductor device.

Abstract: A semiconductor module includes a semiconductor device; a metal plate portion that includes a first surface on a side of the semiconductor device and has a fastening portion at an end thereof; a molded portion that is formed by molding a resin on the semiconductor device and the metal plate portion, a cooling plate portion that is a separate member from the metal plate portion, is provided on a side opposite to the first surface on the side of the semiconductor device, and includes fins on a side opposite to the side of the metal plate portion; wherein the fastening portion of the metal plate portion is exposed out of the molded portion, and the cooling plate portion includes a fastening portion at a position that corresponds to a position of the fastening portion of the metal plate portion.

Abstract: A semiconductor module which includes a semiconductor device; a wiring member that is connected to the semiconductor device; a cooling plate that includes a first surface on a side of the semiconductor device and a second surface on a side opposite to the first surface and has a fastening portion at an end thereof in a first direction; and a molded portion that is formed by molding a resin on the semiconductor device, the wiring member and the cooling plate, wherein the fastening portion is exposed out of the molded portion, and a terminal portion of the wiring member is exposed out of the molded portion such that the terminal portion of the wiring member extends in a second direction which is substantially perpendicular to the first direction.

Abstract: A power module is disclosed that includes a semiconductor element, a first cooling member and a second cooling member configured to sandwich the semiconductor element therebetween, a frame member configured to support the semiconductor element between the first cooling member and the second cooling member and molded resin disposed between the first cooling member and the second cooling member, wherein the frame member includes an adjusting member which adjusts a distance between the first cooling member and the second cooling member.

Abstract: A semiconductor module comprises: a metal block; a semiconductor device installed via a solder layer in a semiconductor device installation area on a surface of the metal block; and a molded portion formed by molding a resin on the metal block and the semiconductor device; wherein the surface of the metal block includes a plating area and a roughened area, and the semiconductor device installation area is provided in the plating area.