Abstract: To provide a solid oxide fuel cell system capable of avoiding the reduction of air electrodes. The present invention is a fuel cell system having: a fuel cell module, a fuel supply apparatus, a water supply apparatus, an air supply apparatus, a reformer, and a control section for controlling the extraction of power from a fuel cell module, whereby the controller includes a shutdown stop circuit for executing a shutdown stop when the fuel cell stack is above the oxidation suppression temperature, and after execution of a shutdown stop, during a period when pressure on the fuel electrode side is sufficiently higher than pressure on the air electrode side, and no reverse flow of air to the fuel electrode side is occurring, a temperature drop operation is executed whereby high temperature air remaining on the air electrode side is discharged.

Abstract: This semiconductor device (100A) includes: a substrate (1); a gate electrode (3) and a first transparent electrode (2) which are formed on the substrate (1); a first insulating layer (4) formed over the gate electrode (3) and the first transparent electrode (2); an oxide semiconductor layer (5) formed on the first insulating layer (4); source and drain electrodes (6s, 6d) electrically connected to the oxide semiconductor layer (5); and a second transparent electrode (7) electrically connected to the drain electrode (6d). At least a portion of the first transparent electrode (2) overlaps with the second transparent electrode (7) with the first insulating layer (4) interposed between them, and the oxide semiconductor layer (5) and the second transparent electrode (7) are formed out of the same oxide film.

Abstract: A compound represented by the following formula: or a pharmaceutically acceptable salt thereof, and pharmaceutical use thereof.

Abstract: A compound represented by the following formula: or a pharmaceutically acceptable salt thereof, and pharmaceutical use thereof.

Abstract: This semiconductor device (100A) includes: a substrate (2); a gate electrode (3) formed on the substrate (2); a gate insulating layer (4) formed over the gate electrode (3); an oxide semiconductor layer (5) formed on the gate insulating layer (4); source and drain electrodes (6s, 6d) electrically connected to the oxide semiconductor layer (5); a first transparent electrode (7) electrically connected to the drain electrode (6d); an interlayer insulating layer (8) including a dielectric layer (8a) formed over the source and drain electrodes (6s, 6d); and a second transparent electrode (9) formed on the interlayer insulating layer (8). At least a portion of the second transparent electrode (9) overlaps with the first transparent electrode (7) with the dielectric layer (8a) interposed between them, and the oxide semiconductor layer (5) and the first transparent electrode (7) are formed out of the same oxide film.

Abstract: A semiconductor device (100A) includes a substrate (2), an oxide semiconductor layer (5) formed on the substrate (2), source and drain electrodes (6s, 6d) electrically connected to the oxide semiconductor layer (5), a first transparent electrode (7) electrically connected to the drain electrode (6d), a dielectric layer (8) formed on the source and drain electrodes (6s, 6d), and a second transparent electrode (9) formed on the dielectric layer (8). The upper and/or lower surface(s) of the first transparent electrode (7) contacts with a reducing insulating layer (8a) with the property of reducing an oxide semiconductor included in the oxide semiconductor layer (5). The second transparent electrode (9) overlaps at least partially with the first transparent electrode (7) via the dielectric layer (8). The oxide semiconductor layer (5) and the first transparent electrode (7) are formed out of the same oxide film.

Abstract: Variation in the electrical characteristics of transistors is minimized and reliability of the transistors is improved. A display device includes a pixel portion 104 and a driver circuit portion 106 outside the pixel portion. The pixel portion includes a pixel transistor, a first insulating layer 122 which covers the pixel transistor and includes an inorganic material, a second insulating layer 124 which is over the first insulating layer and includes an organic material, and a third insulating layer 128 which is over the second insulating layer and includes an inorganic material. The driver circuit portion includes a driving transistor for supplying a signal to the pixel transistor, and the first insulating layer covering the driving transistor. The second insulating layer is not formed in the driver circuit portion.

Abstract: To provide a novel semiconductor device in which a reduction in channel length is controlled. The semiconductor device includes an oxide semiconductor layer having a crystal part, and a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor layer. The oxide semiconductor layer includes a channel formation region and an n-type region in contact with the source electrode layer or the drain electrode layer. The crystal orientation of the crystal part is different between the channel formation region and the n-type region.

Abstract: To inhibit a metal element contained in a glass substrate from being diffused into a gate insulating film or an oxide semiconductor film. A semiconductor device includes a glass substrate, a base insulating film formed using metal oxide over the glass substrate, a gate electrode formed over the base insulating film, a gate insulating film formed over the gate electrode, an oxide semiconductor film which is formed over the gate insulating film and overlapping with the gate electrode, and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In a region of the base insulating film that is present in a range of 3 nm or less from a surface of the base insulating film, the concentration of a metal element contained in the glass substrate is less than or equal to 1×1018 atoms/cm3.

Abstract: Problem: To suppress the occurrence of damage to fuel cell units caused by oxidation shrinkage of fuel electrodes. Solution Means: The invention is a solid oxide fuel cell for generating electricity by reacting hydrogen and oxidant gas in individual fuel cell units, wherein the individual fuel cell units comprise a fuel electrode, an oxidant gas electrode, and a solid electrolyte erected between fuel electrode and oxidant gas electrode; the fuel electrode comprises a composite material containing nickel, and the solid oxide fuel cell prevents shrinkage due to oxidation of the fuel electrode by maintaining the fuel electrode in an oxygen-free atmosphere until the temperature of the fuel electrode has dropped to 350° C. after electrical generation is stopped.

Abstract: The present invention is a solid oxide fuel cell system for generating variable power in response to power demand, having: a fuel cell module; a fuel supply device; a power demand detection device; a controller for controlling the amount of fuel supplied by the fuel supply device based on the power demand, and for setting an extractable current value, being the maximum extractable current value; an inverter for extracting current from the fuel cell module within a range not exceeding the extractable current value; and an extractable current detection device for detecting actual extracted current extracted from the fuel cell module; whereby if certain increase-limiting condition is matched, then even when power demand is rising, the controller maintains the extractable current value at a certain value, or lowers the extractable current value, and does not increase that extractable current value.

Abstract: To provide a solid oxide fuel cell system capable of efficiently and simply controlling a low speed fuel cell module and a high speed inverter. The invention is a solid oxide fuel cell system, comprising: a fuel cell module, a fuel flow regulator unit, a control section comprising a first power demand detection circuit for controlling the fuel supply amount and for setting the value of current extractable from the fuel cell module; an inverter for extracting current from fuel cell module; and a second power demand detection circuit; and having an inverter control section for controlling the inverter independently from the fuel cell controller so that a current responsive to power demand is extracted from the fuel cell module in a range not exceeding the extractable current value input from the fuel cell controller.

Abstract: The invention is a solid oxide fuel cell system including: a fuel cell module, a fuel flow regulator unit, a first power demand detection device, a control section for controlling a fuel supply amount and setting the current value extractable from the fuel cell module, an inverter for extracting current in a range not exceeding the extractable current value, and a power state detecting sensor for detecting actual extracted current value; whereby if actual extracted current value declines, then under circumstances where power demand begins to rise in a state of extra margin in the fuel supply amount after the controller suddenly decreases the extractable current value and suddenly reduces the electrical collector, the controller increases the extractable current value at a high current rise rate of change.

Abstract: To provide a solid oxide fuel cell system with which the durable lifespan of the reformer can be extended by suppressing temperature unevenness in the reformer. The present invention is a solid oxide fuel cell, including a fuel cell module, a reformer for producing hydrogen by POX, ATR, and SR steps; a fuel supply apparatus, a reform air supply apparatus, a water supply apparatus, a generating air supply apparatus, and a control device which, as the temperature inside the fuel cell module rises, executes in sequence POX, ATR and SR steps at predetermined respective temperature bands, and causes a rise in temperature at which electrical generation is possible; wherein the control device comprises a localized temperature rise suppression circuit which, by causing steam reforming to occur locally within the reformer in the POX step, suppresses localized temperature rises in the reformer.

Abstract: The semiconductor conductor device includes a gate electrode 106, an oxide semiconductor film 110, a source electrode 114a and a drain electrode 114b, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface 214a of the source electrode and a second side surface 214b of the drain electrode opposite to the first side surface 214a. The oxide semiconductor film has a side surface which overlaps with the gate electrode, which has a first high resistance region positioned between a first region 206a that is the nearest to one end 314a of the first side surface 214a and a second region 206b that is the nearest to one end 314b of the second side surface 214b. The first high resistance region has a corrugated side surface or the like.

Abstract: Compounds of formula [I]: wherein each symbol is as defined in the description, or a pharmaceutically acceptable salts or solvates thereof.

Abstract: A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

Abstract: To improve the reliability of a transistor as well as to inhibit fluctuation in electric characteristics. A display device includes a pixel portion and a driver circuit portion outside the pixel portion; the pixel portion includes a pixel transistor, a first insulating film covering the pixel transistor and including an inorganic material, a second insulating film including an organic material over the first insulating film, and a third insulating film including an inorganic material over the second insulating film; and the driver circuit portion includes a driving transistor to supply a signal to the pixel transistor, the first insulating film covering the driving transistor, and the second insulating film over the first insulating film, and further includes a region in which the third insulating film is not formed over the second insulating film or a region in which the second insulating film is not covered with the third insulating film.

Abstract: To provide a fuel cell device capable of extending the years of service life of a reformer by suppressing thermal runaways. The present invention is a solid oxide fuel cell device, including a fuel cell module having multiple fuel cell units; a reformer disposed above the fuel cell units, for producing hydrogen by a partial oxidation reforming reaction and a steam reforming reaction; a vaporizing chamber disposed adjacent to the reformer; a combustion chamber for heating the vaporization chamber; a water supply device; a supply device for oxidant gas for electrical generation; and a controller for raising the fuel cell unit to a temperature at which electrical generation is possible; wherein fuel electrodes in each individual fuel cell unit are constituted to act as catalysts for a shift reaction, and the controller executes only the ATR step and SR step in the reformer.

Abstract: A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.