Abstract: A switch includes a first electrode provided on a substrate, an anchor provided on the substrate, a movable structure which is supported by the anchor, provided above the first electrode to be extended from the anchor in a direction, formed of a conductor, and moves downwards, and a contact member which is attached to an edge of the movable structure, formed of a conductor, and warps toward the first electrode.

Abstract: A semiconductor device of this invention includes a first circuit for initializing a predetermined circuit in accordance with the level of a power source voltage, a second circuit for controlling the output from the first circuit by activation or deactivation, and an activation control circuit for activating or deactivating the second circuit in accordance with external input.

Abstract: A high frequency MEMS 1 as a high frequency electrical element has a silicon substrate 2 wholly formed with an insulation film, a first signal line 4 provided on the silicon substrate 2, a second signal line 5 provided on the silicon substrate 2, the second signal line 5 crossing the first signal line 4 within a first region above the silicon substrate 2, and a dielectric film 9 interposed between the first signal line 4 and the second signal line 5, and provided on one of the first signal line 4 and the second signal line 5, within the first region, the first signal line 4 and the second signal line 5 being relatively movable in directions for a contacting approach and a mutual spacing in between.

Abstract: A nonvolatile semiconductor memory device comprises a memory cell array of plural memory cells arranged in matrix. Each memory cell includes a first gate insulator layer formed on a semiconductor substrate, a floating gate formed on the semiconductor substrate with the first gate insulator layer interposed therebetween, a second gate insulator layer formed on the floating gate, and a control gate formed on the floating gate with the second gate insulator layer interposed therebetween. The first gate insulator layer is a first cavity layer.

Abstract: A device with a beam structure includes a substrate, an anchor and a cavity which are provided on and over the substrate, respectively, and a beam structure which is provided on the anchor and over the cavity, extends in a first direction and includes a plurality of convex portions and a plurality of concave portions, each of the convex portions having such a stress gradient as to provide a convex warp, and each of the concave portions having such a stress gradient as to provide a concave warp. The convex portions and the concave portions are alternately repeatedly arranged.

Abstract: An actuator of the present invention includes a moving part, and a driving electrode which is comprised of electrode parts electrically isolated from each other and drives the moving part. A drive voltage is applied selectively to some of the electrode parts to control an electrostatic force which acts on the moving part.

Abstract: A piezoelectric driving type MEMS apparatus includes: a supporting portion provided on a substrate; and a piezoelectric actuator, which is supported on the supporting portion, including a piezoelectric film and a driving electrode configured to drive the piezoelectric film, the piezoelectric film in the piezoelectric actuator having at least one slit extending along a longitudinal direction of the piezoelectric actuator.

Abstract: A semiconductor device includes beam portions and piezoelectric portions. Each of the beam portions is formed to extend in a first direction with one end fixed at a substrate by use of a supporting member and warped by residual stress with the supporting member set as a starting point. Each of the piezoelectric portions is connected to the other end of the corresponding beam portion and formed to extend in a second direction intersecting with the first direction and moves parallel to the substrate in a first direction and in a direction opposite to the first direction by application of bias voltage.

Abstract: An electrostatic actuator includes first and second lower electrodes formed apart from each other above a substrate, an electrode portion formed above the first and second lower electrodes and first and second upper electrodes, a distance between the first upper electrode and the first lower electrode at a first portion being greater than that at a second portion, a distance between the second upper electrode and the second lower electrode at a third portion being greater than that at a fourth portion, a first boundary portion between the first and third upper electrodes having a convex shape, a second boundary portion between the second and third upper electrodes having a convex shape, and the electrode portion driving the third upper electrode, and first and second layers formed in the first and second boundary portions.

Abstract: A semiconductor device having a surface MEMS element, includes a semiconductor substrate, and an actuator which is arranged above the semiconductor substrate via a space and has a lower electrode, an upper electrode, and a piezoelectric layer sandwiched between the lower electrode and the upper electrode, at least an entire surface of the piezoelectric layer being substantially flat.

Abstract: A semiconductor device of this invention includes a first circuit for initializing a predetermined circuit in accordance with the level of a power source voltage, a second circuit for controlling the output from the first circuit by activation or deactivation, and an activation control circuit for activating or deactivating the second circuit in accordance with external input.

Abstract: A semiconductor device of this invention includes a first circuit for initializing a predetermined circuit in accordance with the level of a power source voltage, a second circuit for controlling the output from the first circuit by activation or deactivation, and an activation control circuit for activating or deactivating the second circuit in accordance with external input.

Abstract: A non-volatile semiconductor memory device includes a memory cell array having a plurality of non-volatile memory cells, a decode circuit configured to decode address data as input thereto to select a memory cell from the memory cell array, and a data sense circuit configured to detect and amplify the data of the selected memory cell of the memory cell array. The memory cell array includes an initial setup data region with initial setup data and status data being programmed thereinto. The initial setup data is used for determination of memory operating conditions, and the status data indicates whether the initial setup data region is presently normal or not in functionality.

Abstract: A MEMS includes a first fixed end, a second fixed end, a first electrode, and an actuator element. The first electrode interposes between the first fixed end and the second fixed end. The first electrode is movable by the actuator element. A shape from the first electrode to the first fixed end and a shape from the first electrode to the second fixed end are asymmetrical.

Abstract: A semiconductor integrated circuit comprises an electrostatic actuator, an estimation circuit, a storage circuit and a bias circuit. The electrostatic actuator has a top electrode, a bottom electrode, and an insulating film disposed between the top electrode and the bottom electrode. The estimation circuit estimates the amount of a charge accumulated in the insulating film of the electrostatic actuator. The storage circuit stores a result of the estimation of the charge amount by the estimation circuit. The bias circuit changes, on the basis of the estimation result stored in the storage circuit, a drive voltage to drive the electrostatic actuator.

Abstract: A device with a beam structure includes a substrate, an anchor and a cavity which are provided on and over the substrate, respectively, and a beam structure which is provided on the anchor and over the cavity, extends in a first direction and includes a plurality of convex portions and a plurality of concave portions, each of the convex portions having such a stress gradient as to provide a convex warp, and each of the concave portions having such a stress gradient as to provide a concave warp. The convex portions and the concave portions are alternately repeatedly arranged.

Abstract: A variable-capacitance element includes: a first electrode and a second electrode which are fixed on a substrate with a spacing; a movable electrode; an actuator which is supported on a supporting portion provided on the substrate to drive the movable electrode. The movable electrode is put in an electrically connecting state with the second electrode, when the movable electrode is driven to a first position by the actuator, and the movable electrode is put in an electrically non-connected state with the second electrode, when the movable electrode is driven to a second position by the actuator. The movable electrode is constituted to be always put in an electrically non-connected state with the first electrode.

Abstract: A semiconductor device includes beam portions and piezoelectric portions. Each of the beam portions is formed to extend in a first direction with one end fixed at a substrate by use of a supporting member and warped by residual stress with the supporting member set as a starting point. Each of the piezoelectric portions is connected to the other end of the corresponding beam portion and formed to extend in a second direction intersecting with the first direction and moves parallel to the substrate in a first direction and in a direction opposite to the first direction by application of bias voltage.

Abstract: An actuator includes a movable beam supported on a substrate by a supporting portion, and having a first movable end and a second movable end. The second movable end is opposite to the first movable end with respect to the supporting portion. A first drive beam is connected to the movable beam at around the second movable end. The first drive beam is fixed on the substrate at an end portion of the first drive beam. A second drive beam is connected to the movable beam at a location between the supporting portion and the first movable end. The second drive beam is fixed on the substrate at another end portion of the second drive beam.

Abstract: A semiconductor device includes an elastic member, first and second electrodes, a piezoelectric actuator, and an electrostatic actuator. One end of the elastic member is fixed on a substrate through an anchor so as to form a gap between the elastic member and the substrate. The first and second electrodes are placed to face the other end of the elastic member and the substrate, respectively. The piezoelectric actuator deforms the other end of the elastic member to bring it close to the substrate. The electrostatic actuator includes a third electrode placed in the elastic member and a fourth electrode placed on the substrate so as to face the third electrode, and deforms the other end of the elastic member so as to bring it close to the substrate. The distance between the first and second electrodes is changed by driving the piezoelectric actuator and the electrostatic actuator.