Abstract: A method for fabricating a non-volatile memory is described. A planar doped region is formed in the substrate at first. A mask layer and a patterned photoresist layer are sequentially formed on the substrate. A plurality of trenches is formed in the substrate with the patterned photoresist layer as a mask to divide the planar doped region into a plurality of bit-lines. The patterned photoresist layer is removed and then a recovering process is performed to recover the side-walls and the bottoms of the trenches from the damages caused by the trench etching step. The mask layer is removed. A dielectric layer is formed on the substrate and then a plurality of word-lines is formed on the dielectric layer.

Abstract: A fabrication method for a high voltage device is described. A substrate is provided, wherein a gate structure of a high voltage device is already formed on the substrate. Thereafter, a first thermal process is conducted to form a first doped region in the substrate beside the gate structure of the high voltage device. A spacer is formed on the side of the gate structure of the high voltage device. An oxide layer is further formed on the gate structure of the high voltage device and on the surface of the first doped region. After this, a second thermal process is performed to form a second doped region in the substrate beside the side of the spacer.

Abstract: A programming method of the multi-level flash memory comprises shooting a programming voltage that is increasing upwards stepwise each time into the gate of the multi-level flash memory, and following, shooting a program verify voltage that is decreasing downwards to program a multi-level in the multi-level flash memory and shooting an additional programming voltage into the multi-level flash memory after the last program verify voltage is shot. An erasing method of the multi-level flash memory comprises shooting an erasing voltage that is decreasing downwards stepwise each time into a gate of the multi-level flash memory, and following, shooting a erase verify voltage that is increasing upwards to erase a multi-level in the multi-level flash memory and shooting an additional voltage into the multi-level flash memory after the last erase verify voltage is shot.

Abstract: The present invention provides a memory structure, comprising: a substrate; a gate structure disposed on the substrate; a buried bit-line disposed in the substrate along both sides of the gate structures; a raised bit-line disposed on the buried bit-line; an isolating spacer disposed on both sidewalls of the gate structure and a word-line disposed over the substrate, wherein the word-line is electrically connected to the gate structure and isolated from the raised bit-line by an insulation layer.

Abstract: A method is used for testing a tunneling oxide layer of a flash memory. The method includes providing a test device. The test device includes a diffusion region, a floating gate electrode above the diffusion region, and a tunneling oxide layer disposed between the diffusion region and the floating gate electrode. Multiple contacts are disposed over the periphery of the floating gate but not over the diffusion region. Multiple contacts are disposed over the diffusion region. A first voltage is applied to the floating-gate contacts and A second voltage is applied on to the diffusion-region contacts.

Abstract: A method for fabricating a non-volatile memory is described. A substrate having a strip stacked structure thereon is provided. A buried drain is then formed in the substrate beside the strip stacked structure and an insulating layer is formed on the buried drain. A silicon layer and a cap layer are sequentially formed over the substrate. The cap layer, the silicon layer and the strip stacked structure are then patterned successively in a direction perpendicular to the buried drain, wherein the strip stacked structure is patterned into a plurality of gates. A liner oxide layer is formed on the exposed surfaces of the gates, the substrate and the silicon layer. Thereafter, the cap layer is removed and a metal salicide layer is formed on the exposed surface of the silicon layer.

Abstract: A metal oxide semiconductor field effect transistor structure is disclosed. A p-shape gate, disposed over a semiconductor substrate. A gate dielectric layer is disposed in between the p-shape gate and the semiconductor substrate. A drain region is disposed within the semiconductor substrate, wherein the drain region is surrounded by the p-shape gate. A source region is disposed within the semiconductor substrate, wherein the source region surrounds the p-shape gate. A silicide structure is disposed on the source/drain regions and the p-shape gate.

Abstract: A 2-bit mask ROM device and a fabrication method thereof are described. The 2-bit mask ROM device includes a substrate; a gate structure, disposed on a part of the substrate; a 2-bit code region, configured in the substrate beside both sides of the gate structure; at least one spacer, disposed on both sides of the gate structure; a buried drain region, configured in the substrate beside both sides of the spacer; a doped region, configured in the substrate between the buried drain region and the 2-bit code region, wherein the dopant type of the doped region is different from that for the 2-bit code region and the dopant concentration in the doped region is higher than that in the 2-bit code region; an insulation layer, disposed above the buried drain region; and a word line disposed on the gate structures along a same row.

Abstract: An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure of the present invention uses a resistance capacitance (RC) circuit to distinguish an overshoot phenomenon caused by the instantaneous power-on from an ESD event, so as to prevent the ESD protection device, such as a P-type modified lateral silicon controlled rectifier (MLSCR), from being triggered unexpectedly by an overshoot phenomenon which results from the power-on under normal operation, and thereby the efficiency of the ESD protection device is promoted.

Abstract: A Mask ROM testing device is described. The Mask ROM testing device comprises a substrate, a plurality of buried bit-lines in the substrate and a plurality of word-lines on the substrate perpendicular to the buried bit-lines. Each buried bit-line has two end portions with a combined length of about 3˜30 &mgr;m and can have an N-type conductivity or a P-type conductivity.

Abstract: A method for manufacturing a semiconductor device. A trench is formed in a substrate. An insulation spacer is then formed on the sidewall of the trench. A first epitaxial silicon layer is formed in the trench, followed by doping the first epitaxial layer as a doped source/drain (S/D) region. A second epitaxial silicon layer is formed on the substrate and on the first epitaxial silicon layer, followed by forming a gate on the second epitaxial silicon layer. Then using the gate as a mask, ions are implanted to form an extended doped region. Thereafter, a rapid thermal annealing is performed to convert both the source/drain doped region and the extended doped region to a source/drain region.

Abstract: A method for programming and erasing a non-volatile memory with a nitride tunneling layer is described. The non-volatile memory is programmed by applying a first voltage to the gate and grounding the substrate to turn on a channel between the source and the drain, and applying a second voltage to the drain and grounding the source to induce a current in the channel and thereby to generate hot electrons therein. The hot electrons are injected into a charge-trapping layer of the non-volatile and trapped therein through the nitride tunneling layer. The non-volatile memory is erased by applying a first positive bias to the drain, applying a second positive bias to the gate, and grounding the source and the substrate to generate hot electron holes in the channel region. The hot electron holes are injected into the charge-trapping layer through the nitride tunneling layer.

Abstract: A circuit for measuring capacitance of a capacitor that includes a PMOS device, a NMOS device, a first terminal, and a second terminal. The drains of the PMOS and NMOS devices are connected to each other, one end of the first terminal is connected between the drains of the PMOS and NMOS devices, and the other end of the first terminal and one end of the second terminal are connected respectively to two sides of a capacitor. The invention also discloses a method for measuring capacitance of a capacitor by using the circuit mentioned above.

Abstract: The invention discloses a voltage reference circuit, which includes a first resistor, a second resistor and a MOS device. In the invention, the MOS device is connected in series between the first resistor and the second resistor and a gate of the MOS device is electrically connected to a drain of the MOS device. The MOS device can be an NMOS, wherein the drain of the NMOS is electrically connected to the second resistor, a source of the NMOS is electrically connected to the first resistor, and a bulk of the NMOS is electrically connected to the source of the NMOS or ground. The MOS device can also be a PMOS, wherein the source of the PMOS is electrically connected to the second resistor, the drain of the PMOS is electrically connected to the first resistor, and the bulk of the PMOS is electrically connected to the source of the PMOS or a voltage source.

Abstract: A non-volatile semiconductor memory device with a multi-layer gate insulating structure is provided. The non-volatile semiconductor memory device comprises a gate insulating structure formed between a gate and a channel region, which includes a top silicon nitride layer, an intermediate silicon nitride layer and a bottom silicon nitride layer. When an electric field is applied between the gate and a drain region beside the channel region, hot carriers exhibit a direct tunneling across the bottom silicon nitride layer from the drain region for a write-erase operation. The hot carriers having exhibited the direct tunneling from the drain region are trapped into the intermediate silicon nitride layer.

Abstract: First of all, a semiconductor substrate is provided, wherein the semiconductor substrate has a dielectric layer thereon and two insulated regions that are individually located on the boundary of the semiconductor substrate. Then a first ion implanting process is performed to form an ion-implanting region in the semiconductor substrate between two insulated regions. Next, a second ion implanting process is performed to intensify the ion-implanting region in the semiconductor substrate between two insulated regions. Afterward, a third ion implanting process is performed to intensify again the ion-implanting region in the semiconductor substrate between two insulated regions. Subsequently, floating gates are formed and defined on the dielectric layer. Finally, source/drain regions are formed in the ion implanting region of the semiconductor substrate between the plurality of floating gates from each other by way of using a fourth ion implanting process.

Abstract: A MOSFET structure comprises a tortuous gate having a first sidewall and a second sidewall, disposed over a semiconductor substrate. A source region is disposed within the semiconductor substrate adjacent to the first sidewall of the tortuous gate. The source region comprises a broader part and a narrower part. Contacts are positioned above the broader part of the source region and are in contact with the broader part of the source region. A drain region is disposed within the semiconductor substrate adjacent to the second sidewall of the tortuous gate. The drain region comprises a broader part and a narrower part. Contacts are disposed above the broader part of the drain region and are in contact with the broader part of the drain region. The broader part of the drain region is disposed opposite to the narrower part of the source region. The narrower part of the drain region is disposed opposite to the broader part of the source region.

Abstract: A transistor device that includes at least two transistors, each transistor including a source region, a drain region, and a shallow trench isolation formed between and contiguous with the source and drain regions, wherein the shallow trench isolation electrically isolates the source and drain regions to minimize the short-channel effects, a conductor layer disposed over the source region, shallow trench isolation, and drain region, wherein the conductor layer electrically connects the source and drain regions to serve as a channel region, a gate oxide disposed over the conductor layer, and a gate structure formed over the gate oxide.

Abstract: A circuit structure for measuring a capacitive load. The capacitive load is coupled between a first and a second nodes, and drains of a first PMOS and a first NMOS transistors are coupled to the first node, and drains of a second PMOS and a second NMOS transistors are coupled to the second node, and a pad is coupled to the second node. First, sources of the first and the second PMOS transistors and sources of the first and the second NMOS transistors are biased at a power source and a ground respectively. A non-synchronized voltage is applied to gates of the first and the second PMOS transistors and to gates of the first and the second NMOS transistors simultaneously. By grounding and floating the pad, a current flowing through the capacitive load is obtained to calculate the capacitance.

Abstract: An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure of the present invention uses a resistance capacitance (RC) circuit to distinguish an overshoot phenomenon caused by the instantaneous power-on from an ESD event, so as to prevent the ESD protection device, such as P-type modified lateral silicon controlled rectifier (MLSCR), from being triggered unexpectedly by an overshoot phenomenon resulted from the power-on under normal operation, and thereby the efficiency of the ESD protection device is promoted.