Abstract: A plasma processing apparatus includes: a coaxial tube that extends in a vertical direction and forms a portion of a radio frequency waveguide; a substrate support configured to support a substrate; an electrode including a gas flow path connected to a gas ejection port opened toward a space above the substrate support, wherein the electrode is provided above the substrate support and an inner conductor of the coaxial tube is connected to a center of the electrode; an enlarged diameter portion forming a part of the radio frequency waveguide together with the electrode and connected to an outer conductor of the coaxial tube; and dielectric tubes formed of a dielectric material, wherein each of the dielectric tubes is connected to the electrode and penetrates a space between the electrode and the enlarged diameter portion to supply a gas to the electrode, wherein the dielectric tubes is scatteredly provided.

Abstract: Embodiments of this application discloses a plasma processing method performed in a plasma processing apparatus having a plurality of plasma sources, the plasma processing method comprising: controlling each of the plasma sources so that at least one plasma source of the plurality of plasma sources is in a first state referring an OFF-state or a power state of a first level and the remaining plasma sources are in a second state referring an ON-state or a power state of a second level higher than the power state of the first level; and generating plasma from a processing gas with power output from the plurality of plasma sources, and processing a substrate, wherein said controlling of each of the plasma sources includes repeatedly controlling so that the plasma source of the first state among the plurality of plasma sources is sequentially transitioned.

Abstract: There is provided a plasma processing method in a plasma processing apparatus including a chamber, a stage on which a substrate is placed in the chamber, a plurality of radiating devices configured to radiate a plurality of electromagnetic waves, and a dielectric window disposed between the plurality of radiating devices and the stage. The method comprises: preparing the substrate on the stage; controlling a phase of at least one of the plurality of electromagnetic waves radiated from the plurality of radiating devices; radiating the plurality of electromagnetic waves into the chamber from the plurality of radiating devices; and processing the substrate using localized plasma generated from a gas supplied between the dielectric window and the stage.

Abstract: A plasma processing apparatus includes a processing chamber, a conductive annular member, a microwave radiating mechanism and a plasma detector. The processing chamber has a ceiling plate with an opening. The conductive annular member is disposed at the opening while being insulated from the ceiling plate. The microwave radiating mechanism is disposed on the ceiling plate to be coaxial with a center of the conductive annular member and configured to radiate microwaves into the processing chamber. Further, a plasma detector is connected to the conductive annular member and configured to detect a state of generated plasma.

Abstract: A model learning apparatus is configured to learn a model that shows a relationship between an input variable v input into a system and an output variable y output from the system. The model learning apparatus includes a storage that stores a model used to learn a nonlinear equation of state for predicting the output variable y by using the input variable v, and a processor programmed to learn the equation of state by using the model and an input-output data set including multiple sets of input variable data and output variable data with respect to the model. The model is an equation of state including a bijective mapping ? that uses the input variable v as an input thereof and a bijective mapping ? that uses the output variable y as an input thereof.

Abstract: Provided is a plasma processing apparatus capable of suppressing abnormal discharge. The plasma processing apparatus includes: an upper electrode and a lower electrode which are disposed inside a processing container so as to face each other inside the processing container; and a dielectric shower for gas introduction disposed below the upper electrode, wherein the plasma processing apparatus generates plasma in a space between the upper electrode and the lower electrode. The upper electrode includes: at least one slot configured to introduce VHF waves into the processing container; and a gas flow path provided independently of the at least one slot and in communication with the dielectric shower.

Abstract: A plasma processing apparatus capable of improving the in-plane uniformity of plasma and a lower stage used for the plasma processing apparatus are anticipated. In an exemplary embodiment, the lower stage is for a lower stage that generates plasma with an upper electrode. The lower stage includes: a lower dielectric body formed of ceramic, a lower electrode embedded in the lower dielectric body, and a heating element embedded in the lower dielectric body. The separation distance between the top surface of the lower dielectric body at the outer edge position thereof and the lower electrode is smaller than the separation distance between the top surface of the lower dielectric body in the central region thereof and the lower electrode. The lower electrode has an inclination region inclined with respect to the top surface between the outer edge position and the central region.

Abstract: There is provided a plasma processing apparatus. The apparatus comprises a chamber having a processing space for performing plasma processing on a substrate and a combining space for combining electromagnetic waves, a dielectric window separating the processing space from the combining space, an antenna unit having a plurality of antennas radiating the electromagnetic waves to the combining space and functioning as a phased array antenna, an electromagnetic wave output unit that outputs the electromagnetic waves to the antenna unit, a stage on which the substrate is placed, a gas supply unit that supplies a gas for ALD film formation to the processing space, and a controller that controls the gas supply unit to supply the gas to perform the ALD film formation and control localized plasma to move at a high speed in the processing space by causing the antenna unit to function as the phased array antenna.

Abstract: The present invention provides a plastic container with excellent slipping property for contents. According to the present invention, provided is a plastic container for storing contents, wherein the plastic container is a blow molded body, an innermost layer in contact with the contents is formed of a resin composition containing a base resin and filler particles, and an inner surface of the innermost layer is provided with concave and convex shapes due to presence of the filler particles.

Abstract: An image judging system includes a server and a mobile terminal performing communication therewith. The server includes a position calculating unit that calculates positions of an image of interest and a first landmark image corresponding thereto of a judging target image in whole image data obtained on the basis of a judging target image. The mobile terminal includes: a display unit displaying the image data and the guide mark together; and an imaging unit capturing an image of the judging target image, thereby generating image data, and generating image data related to the judging target image. The server or the mobile terminal includes a guide information generating unit calculating a position of a guide mark on the basis of a position of the detected first landmark image in the image data and a positional relationship between the image of interest and the first landmark image in the whole image data.

Abstract: The plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, an upper electrode, a dielectric plate, and a waveguide. The stage is provided in the processing container. The dielectric plate is provided above the stage with a space in the processing container interposed therebetween. The upper electrode is provided above the dielectric plate. The waveguide has an end and guides high frequency waves in a VHF band or a UHF band. The end is arranged to face the space to radiate high frequency waves to the space. The dielectric plate includes a conductive film. The conductive film is provided on an upper surface of the dielectric plate. The upper surface faces the upper electrode. The conductive film is electrically connected to the upper electrode.

Abstract: In a shower plate, a plasma processing apparatus, and a plasma processing method, improvement of in-plane uniformity of plasma on a stage is required. The shower plate according to an exemplary embodiment includes an upper dielectric disposed to face a stage and an upper electrode embedded in the upper dielectric. A distance between a bottom surface of the upper dielectric and the upper electrode is shorter in a peripheral portion than in a central portion.

Abstract: A method of controlling plasma includes providing a plasma processing apparatus that includes N microwave introducing radiators disposed in a circumferential direction of a ceiling plate of a processing container so as to introduce microwaves for generating plasma into the processing container, wherein N?2; and M sensors and configured to monitor at least one of electron density Ne and electron temperature Te of the plasma generated in the processing container, wherein M equals to N or a multiple of N. The method further includes controlling at least one of a power and a phase of the microwaves introduced from the microwave introducing radiators based on at least one of electron density Ne and electron temperature Te of the plasma monitored by the M sensors.

Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided within the chamber; a shower head made of a metal and including a plurality of gas holes open toward a space within the chamber, the shower head being provided above the substrate support; a gas supply pipe made of the metal and extending vertically above the chamber to be connected to a center of an upper portion of the shower head; an introduction part formed of a dielectric material and provided along an outer circumference of the shower head so as to introduce electromagnetic waves, which are VHF waves or UHF waves, into the chamber; and an electromagnetic wave supply path connected to the gas supply pipe, wherein the gas supply pipe includes an annular flange, and the supply path includes a conductor connected to the flange.

Abstract: Improvement of plasma heat dissipation has been required with respect to a plasma processing apparatus. The plasma processing apparatus includes a dielectric, a conductive film, a heat radiation film, and an electrode. The dielectric has one surface which faces a space for plasma generation. The conductive film is installed on the other surface of the dielectric. The heat radiation film is installed on the conductive film, and has a higher emissivity than the conductive film. The electrode is electrically connected to the conductive film so as to apply electric power for plasma generation.

Abstract: In a plasma processing apparatus and a plasma processing method, improvement of the in-plane uniformity of plasma on a stage is required. The plasma processing apparatus includes a processing container, a stage, and a dielectric plate. The stage is provided within the processing container, the dielectric plate includes a plurality of through-holes for gas injection, and an upper surface of the dielectric plate is provided with a conductive film. A space between the conductive film and the stage within the processing container is used as a plasma processing space. The dielectric plate has a central portion and an outer peripheral portion, upper surfaces of the central portion and the outer peripheral portion include flat portions, and the central portion is larger in thickness than the outer peripheral portion.

Abstract: A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

Abstract: Provided is a plasma processing apparatus including: a plurality of gas supply nozzles which are provided on a wall surface of a processing container and supply process gas toward the inside of the processing container in a radial direction; N microwave introducing modules of which the number disposed in a circumferential direction of a ceiling plate of the processing container so as to introduce microwaves for generating plasma into the processing container, in which N?2; and M sensors provided on the wall surface of the processing container so as to monitor at least any one of electron density Ne and electron temperature Te of the plasma generated in the processing container, in which M equals to N or a multiple of N.

Abstract: A stage includes a stage body having a placement surface and a radio-frequency electrode embedded in the stage body. The stage body is made of ceramics, and the radio-frequency electrode extends in a thickness direction of the stage body in a region below an outer periphery of the placement surface.

Abstract: An array antenna radiates an electromagnetic wave into a chamber of a plasma processing apparatus. The array antenna includes antennas and coupling prevention elements arranged at intervals between the antennas. Each of the coupling prevention elements includes a first member connected to a ceiling wall which is a ground surface in the chamber and a second member connected to a tip end of the first member or a vicinity of the tip end of the first member.