Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, includes: a microwave output part; a microwave transmission part configured to transmit microwave outputted from the microwave output part; and a microwave radiation member configured to radiate the microwave into the chamber, wherein the microwave transmission part includes a microwave introduction mechanism configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes: a metal main body; a dielectric slow-wave member installed in a portion of the main body; a plurality of slots configured to radiate the microwave introduced through the dielectric slow-wave member therethrough; and a dielectric microwave transmission member installed in a portion facing the chamber in the main body to cover a region where the slots are formed; and a plurality of dielectric layers installed to be separated from each other.

Abstract: A plasma processing device processes a substrate by generating plasma using a surface wave formed on a surface of a shower plate by a supplied microwave, which includes a plasma generating antenna equipped with the shower plate for supplying first and second gases into a processing vessel, and a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. The first gas supply holes are disposed inward of the outer surface of the drooping member. The second gas supply holes are disposed outward of the outer surface of the drooping member.

Abstract: There is provided a plasma processing apparatus which includes a plasma generating antenna equipped with a shower plate and configured to supply a first gas and a second gas into a processing vessel. The apparatus includes a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes a plurality of first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. Each of the first gas supply holes is disposed inward of the outer surface of the drooping member. Each of the second gas supply holes is disposed outward of the outer surface of the drooping member. An orifice portion is formed in the through-hole.

Abstract: A microwave plasma processing apparatus includes a microwave supply part configured to supply a microwave, and a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part. A microwave transmission member is provided to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave transmitted to a slot antenna via the microwave emission member. The ceiling has at least one recess having a depth in a range of ?sp/4±?sp/8 on an outer side of the opening when a wavelength of a surface wave of the microwave traveling through the microwave transmission member and propagating along a surface of the ceiling from the opening is taken as ?sp.

Abstract: An antenna includes a first waveguide configured to guide VHF radio frequency waves, and a second waveguide configured to guide the VHF radio frequency waves supplied from the first waveguide, the second waveguide having a pair of metal reflective plates therein facing each other across a longitudinal distance along the second waveguide, wherein a tip end of the first waveguide is coupled to the second waveguide at a sideways point thereof between the metal reflective plates, and wherein a distance between the metal reflective plates is ?g/4+?g·n/2, ?g being a wavelength of the VHF radio frequency waves in tube, and n being an integer greater than or equal to zero.

Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, which includes: a microwave output part for outputting the microwave; a microwave transmission part for transmitting the microwave; and a microwave radiation member for radiating the microwave into the chamber. The microwave transmission part includes a plurality of microwave introduction mechanisms circumferentially arranged in a peripheral portion of the microwave radiation member and configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes a metal main body, a plurality of dielectric slow-wave members arranged in an overall annular shape in the vicinity of an arrangement surface of the main body, an annular dielectric microwave transmission member arranged in a microwave radiation surface of the main body, and a slot antenna part installed between the slow-wave members and the microwave transmission member.

Abstract: A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

Abstract: A plasma processing apparatus, for converting a gas into plasma by using microwaves microwaves and processing a target object in a processing chamber, includes a microwave introducing surface and a plurality of gas injection holes. Microwaves from a microwave introducing unit are introduced through microwave introducing surface and surface waves of the microwaves propagate on the microwave introducing surface. The gas injection holes are arranged at predetermined intervals within a predetermined range from a boundary line between the microwave introducing surface and a surface of the processing chamber that is adjacent to the microwave introducing surface.

Abstract: A microwave plasma source radiating a microwave in a chamber of a plasma processing apparatus to generate surface wave plasma includes a microwave output unit configured to generate and output a microwave, a microwave supply unit configured to transmit the microwave output from the microwave output unit, and a microwave radiation member configured as a ceiling wall of the chamber and configured to radiate the microwave supplied from the microwave supply unit into the chamber. The microwave supply unit includes microwave introduction mechanisms provided along a circumferential direction, thereby introducing the microwave to the microwave radiation member. The microwave radiation member includes slot antennas having slots through which the microwave is radiated and a microwave transmission member. The slots are provided to form a circular shape as a whole. The microwave transmission member provided to form a circular ring shape.

Abstract: Disclosed is a plasma processing apparatus including a plurality of microwave radiating mechanisms configured to radiate microwaves output from an output unit in a surface wave plasma source into a processing container. The plasma processing apparatus includes a controller configured to generate plasma, while a plasma processing is not performed on a substrate, by radiating microwaves with total power which is 1/50 or less of total power of microwaves per unit area radiated when the plasma processing is performed on the substrate.

Abstract: A plasma processing apparatus includes a microwave introducing module provided at a ceiling portion of a processing chamber and configured to introduce a microwave for generating plasma of a gas into the processing chamber; and a plurality of gas supply holes formed at the ceiling portion of the processing chamber and configured to introduce the gas into a plasma processing space. Each of the plurality of gas supply holes includes a fine hole and a cavity that is expanded from the fine hole and opened to the plasma processing space. A diameter of the cavity on the plasma processing space side is 3 mm or more and is ? or less of a wavelength of a surface wave of a microwave in the plasma.

Abstract: Provided is a plasma processing apparatus including a microwave radiating mechanism configured to radiate microwaves output from a microwave output unit into a processing container. The microwave radiating mechanism includes: an antenna configured to radiate the microwaves; a dielectric member configured to transmit the microwaves radiated from the antenna, and form an electric field for generating surface wave plasma by the microwaves; a sensor provided in the microwave radiating mechanism or adjacent to the microwave radiating mechanism, and configured to monitor electron temperature of the generated plasma; and a controller configured to determine a plasma ignition state based on the electron temperature of the plasma monitored by the sensor.

Abstract: Provided is a plasma processing apparatus including: a plurality of gas supply nozzles which are provided on a wall surface of a processing container and supply process gas toward the inside of the processing container in a radial direction; N microwave introducing modules of which the number disposed in a circumferential direction of a ceiling plate of the processing container so as to introduce microwaves for generating plasma into the processing container, in which N?2; and M sensors provided on the wall surface of the processing container so as to monitor at least any one of electron density Ne and electron temperature Te of the plasma generated in the processing container, in which M equals to N or a multiple of N.

Abstract: An internal combustion engine is provided, in which a quantity of NOx emission can be reduced without using any special components even when a NOx reduction catalyst has an elevated temperature due to high-load operation. The internal combustion engine includes an engine, a three-way catalyst and a NOx reduction catalyst for purifying exhaust gas emitted from the engine, a temperature sensor for acquiring the temperature of the NOx reduction catalyst, a rotation speed sensor for acquiring an engine rotation speed, an injection controller for controlling a fuel injection quantity in the engine, and a combustion switching controller for switching a combustion mode of the engine between lean and stoichiometric combustion modes based on the NOx reduction catalyst temperature, the engine rotation speed, and the fuel injection quantity acquired from the fuel injection controller.

Abstract: A plasma processing apparatus includes a chamber, a mounting table for mounting thereon a target object in the chamber, a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber, a first gas introduction unit for introducing a first gas into the chamber from the ceiling wall, and a second gas introduction unit for introducing a second gas into the chamber from a location between the ceiling wall and the mounting table. The second gas introduction unit includes a ring-shaped member having a plurality of gas injection holes and provided at a predetermined height position between the ceiling wall and the mounting table, and a leg part which connects the ceiling wall and the ring-shaped member. The second gas is supplied to the ring-shaped member through the leg part.

Abstract: There is provided a plasma processing apparatus including a microwave output part configured to generate microwaves and to distribute and output the microwaves to a plurality of paths, a microwave transmission part configured to transmit the microwaves outputted from the microwave output part into a process container via a plurality of transmission paths, and a control part configured to control the microwaves. The control part is configured to control the microwaves such that the phases of microwaves become different from each other when the microwaves transmitted via the transmission paths are introduced from a microwave transmitting plate for common use into the process container.

Abstract: There is provided a plasma processing apparatus including a microwave introduction part configured to radiate microwaves transmitted by a microwave transmission part inside a process container. The microwave introduction part includes a conductive member constituting a ceiling portion of the process container and having a recess formed to face the mounting surface, a plurality of slots forming a part of the conductive member and configured to radiate the microwaves transmitted via the microwave transmission part, and a microwave transmitting member fitted to the recess of the conductive member and configured to transmit and introduce the microwaves radiated from the plurality of slots into the process container. The microwave transmitting member is provided to be shared with the microwaves transmitted via transmission paths and includes an interference suppressing part configured to suppress interference of the microwaves in the microwave transmitting member.

Abstract: A power combiner includes a main body composed of outer and inner conductors, a plurality of power introduction ports configured to introduce electromagnetic wave powers supplied through power supply lines into the main body, a power combining antenna configured to radiate electromagnetic waves to a space between the outer and inner conductors such that the powers are combined, and an output port through which the combined electromagnetic wave is outputted from the main body. The power combining antenna includes a plurality of antenna members, each of which has a first pole and a second pole that is in contact with the inner conductor, and a reflection part configured to reflect the electromagnetic waves.

Abstract: A plasma processing apparatus (1) includes a processing container (2) and a microwave introduction device (5) having a plurality of microwave introduction modules (61). A microwave is introduced for each of the plurality of microwave introduction modules (61), and S-parameters for each of combinations of the plurality of microwave introduction modules (61) are obtained based on the introduced microwave and a reflected microwave reflected from the processing container (2) into the plurality of microwave introduction modules (61).

Abstract: A plasma processing apparatus including a processing vessel 10 in which a plasma process is performed and a plasma generation antenna 20 having a shower plate 100 which supplies a first gas and a second gas into the processing vessel 10, performs the plasma process on a substrate with plasma generated by a surface wave formed on a surface of the shower plate 100 through a supply of a microwave. The shower plate 100 has multiple gas holes 133 configured to supply the first gas into the processing vessel 10 and multiple supply nozzles 160 configured to supply the second gas into the processing vessel 10, and the supply nozzles 160 are protruded vertically downwards from a bottom surface of the shower plate 100 and are provided at different positions from the gas holes 133.