Abstract: There is provided a microwave plasma source for radiating microwaves into a chamber of a plasma processing apparatus to generate surface wave plasma, including: a plurality of microwave radiation mechanisms provided in a ceiling wall of the chamber and configured to radiate microwaves into the chamber; and a perforated plate provided in a high electric field formation region used as a high electric field region when the microwaves are radiated from microwave radiation surfaces of the microwave radiation mechanisms into the chamber and which exists just below the microwave radiation surfaces. The perforated plate has a function of confining surface waves formed just below the microwave radiation surfaces when the microwaves are radiated from the microwave radiation mechanism, in a space surrounded by the microwave radiation surfaces and the perforated plate, and a function of keeping high a power absorption efficiency of plasma generated in the space.

Abstract: An antenna for plasma generation radiates a microwave transmitted through a coaxial waveguide into a processing chamber and propagates the microwave on a metal surface of the processing chamber to convert gas into surface wave plasma. The antenna includes a gas flow path for passing the gas through the antenna, a plurality of gas holes that communicate with the gas flow path and introduce the gas into the processing chamber, and a plurality of slots that are separated from the gas flow path and penetrate through the gas flow path. The slots pass the microwave transmitted through the coaxial waveguide and a slow-wave plate to the processing chamber. A first space between portions of adjacent slots penetrating through the gas flow path is arranged to be wider than a second space between portions of the adjacent slots opening out to a plasma generation space of the processing chamber.

Abstract: A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave.

Abstract: A plasma generation antenna and a plasma processing apparatus can supply a gas and an electromagnetic wave effectively. A plasma processing apparatus 10 includes a processing chamber 100 in which a plasma process is performed; a wavelength shortening plate 480 configured to transmit an electromagnetic wave; and a plasma generation antenna 200 having a shower head 210 provided adjacent to the wavelength shortening plate 480. The shower head 210 is made of a conductor, and has a multiple number of gas holes 215 and a multiple number of slots 220 through which the electromagnetic wave passes. The slots 220 are provided at positions isolated from the gas holes 215.

Abstract: A microwave emission mechanism includes: a transmission path through which a microwave is transmitted; and an antenna section that emits into a chamber the microwave transmitted through the transmission path. The antenna section includes an antenna having a slot through which the microwave is emitted, a dielectric member through which the microwave emitted from the antenna is transmitted and a closed circuit in which a surface current and a displacement current flow. A surface wave is formed in a surface of the dielectric member. The closed circuit has at least: an inner wall of the slot; and the surface and an inner portion of the dielectric member. When a wavelength of the microwave is ?0, a length of the closed circuit is n?0±?, where n is a positive integer and ? is a fine-tuning component including 0.

Abstract: A power combiner includes a main body composed of outer and inner conductors, a plurality of power introduction ports configured to introduce electromagnetic wave powers supplied through power supply lines into the main body, a power combining antenna configured to radiate electromagnetic waves to a space between the outer and inner conductors such that the powers are combined, and an output port through which the combined electromagnetic wave is outputted from the main body. The power combining antenna includes a plurality of antenna members, each of which has a first pole and a second pole that is in contact with the inner conductor, and a reflection part configured to reflect the electromagnetic waves.

Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, includes: a microwave output part; a microwave transmission part configured to transmit microwave outputted from the microwave output part; and a microwave radiation member configured to radiate the microwave into the chamber, wherein the microwave transmission part includes a microwave introduction mechanism configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes: a metal main body; a dielectric slow-wave member installed in a portion of the main body; a plurality of slots configured to radiate the microwave introduced through the dielectric slow-wave member therethrough; and a dielectric microwave transmission member installed in a portion facing the chamber in the main body to cover a region where the slots are formed; and a plurality of dielectric layers installed to be separated from each other.

Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, which includes: a microwave output part for outputting the microwave; a microwave transmission part for transmitting the microwave; and a microwave radiation member for radiating the microwave into the chamber. The microwave transmission part includes a plurality of microwave introduction mechanisms circumferentially arranged in a peripheral portion of the microwave radiation member and configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes a metal main body, a plurality of dielectric slow-wave members arranged in an overall annular shape in the vicinity of an arrangement surface of the main body, an annular dielectric microwave transmission member arranged in a microwave radiation surface of the main body, and a slot antenna part installed between the slow-wave members and the microwave transmission member.

Abstract: A plasma processing device processes a substrate by generating plasma using a surface wave formed on a surface of a shower plate by a supplied microwave, which includes a plasma generating antenna equipped with the shower plate for supplying first and second gases into a processing vessel, and a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. The first gas supply holes are disposed inward of the outer surface of the drooping member. The second gas supply holes are disposed outward of the outer surface of the drooping member.

Abstract: There is provided a plasma processing apparatus which includes a plasma generating antenna equipped with a shower plate and configured to supply a first gas and a second gas into a processing vessel. The apparatus includes a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes a plurality of first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. Each of the first gas supply holes is disposed inward of the outer surface of the drooping member. Each of the second gas supply holes is disposed outward of the outer surface of the drooping member. An orifice portion is formed in the through-hole.

Abstract: The microwave introducing mechanism includes an antenna unit having a planar antenna radiating a microwave into a chamber; a tuner for performing impedance matching; and a heat dissipation device for dissipating a heat from the antenna unit. The tuner has a tuner main body including a tubular outer conductor and a tubular inner conductor to serve as a part of a microwave transmission line; slugs provided between the outer conductor and the inner conductor to be movable along a longitudinal direction of the inner conductor; and a driving device for moving the slugs. The heat dissipation device has a heat pipe configured to transfer the heat of the antenna unit from its heat input end to its heat dissipation end.

Abstract: An impedance matching slug that performs an impedance matching process in a waveguide is axially movably interposed between an outer conductor and an inner conductor of the waveguide. The impedance matching slug includes: a cylindrical first part and a cylindrical second part which are coupled to each other, wherein each of the first part and the second part has an inner circumferential surface facing the inner conductor and an outer circumferential surface facing the outer conductor, wherein the second part is disposed in the outside of the first part in such a manner that the inner circumferential surface of the second part is in contact with the outer circumferential surface of the first part, wherein one of the first part and the second part is constituted by a conductor, and wherein the other of the first part and the second part is constituted by a dielectric.

Abstract: In the microwave heating apparatus, four microwave introduction ports are arranged at positions spaced apart from each other at an angle of about 90° in a ceiling portion of a processing chamber in such a way that the long sides and the short sides thereof are in parallel to inner surfaces of four sidewalls. The microwave introduction port are disposed in such a way that each of the microwave introduction ports are not overlapped with another microwave introduction port whose long sides are in parallel to the long sides of the corresponding microwave introduction port when the corresponding microwave introduction port is moved in translation in a direction perpendicular to the long sides thereof.

Abstract: A plasma processing apparatus (1) includes a processing container (2) and a microwave introduction device (5) having a plurality of microwave introduction modules (61). A microwave is introduced for each of the plurality of microwave introduction modules (61), and S-parameters for each of combinations of the plurality of microwave introduction modules (61) are obtained based on the introduced microwave and a reflected microwave reflected from the processing container (2) into the plurality of microwave introduction modules (61).

Abstract: An electromagnetic-radiation power-supply mechanism includes a microwave power introduction port provided on the side of the coaxial waveguide, a power line being connected to the microwave power introduction port; and a power supply antenna for radiating the electromagnetic wave power into the waveguide, the power supply antenna being connected to the power line. The power supply antenna includes an antenna body having a first pole connected to the power line and a second pole connected to an inner conductor of the waveguide; and a ring-shaped reflection portion extending from opposite sides of the antenna body.

Abstract: A sheet feeding device includes a sheet accommodating unit supported by an apparatus main body in an insertable and withdrawable manner in a direction orthogonal to a feeding direction of the sheets, a leading edge regulating unit provided fixedly to the sheet accommodating unit, a trailing edge regulating unit provided in the sheet accommodating unit, a side edge regulating unit provided in the sheet accommodating unit, and an insertion position limiting unit configured to contact a frame on a rear of the apparatus main body in an inserting direction of the sheet accommodating unit to limit an insertion position of the sheet accommodating unit, wherein the insertion position limiting unit is arranged on a rear of the sheet accommodating unit and on an upstream of a position of center of gravity of the sheet accommodating unit along a sheet feeding direction.

Abstract: A microwave plasma source radiating a microwave in a chamber of a plasma processing apparatus to generate surface wave plasma includes a microwave output unit configured to generate and output a microwave, a microwave supply unit configured to transmit the microwave output from the microwave output unit, and a microwave radiation member configured as a ceiling wall of the chamber and configured to radiate the microwave supplied from the microwave supply unit into the chamber. The microwave supply unit includes microwave introduction mechanisms provided along a circumferential direction, thereby introducing the microwave to the microwave radiation member. The microwave radiation member includes slot antennas having slots through which the microwave is radiated and a microwave transmission member. The slots are provided to form a circular shape as a whole. The microwave transmission member provided to form a circular ring shape.

Abstract: A microwave heating apparatus includes a processing chamber configured to accommodate a substrate; a substrate holding unit configured to hold and rotate the substrate in the processing chamber; a microwave generating source configured to generate a microwave; and a plurality of microwave inlet ports formed at a surface of the processing chamber which faces the substrate in the processing chamber, each of the microwave inlet ports having an opening area that gradually becomes wider toward the substrate. The microwave generated by the microwave generating source is irradiated to the substrate in the processing chamber through the microwave inlet ports to heat the substrate.

Abstract: A microwave heating apparatus includes a processing chamber having a top wall, a bottom wall and a sidewall, and configured to accommodate an object to be processed; a microwave introducing unit configured to generate a microwave for heating the object and introduce the microwave into the processing chamber; a plurality of supporting members configured to make contact with the object and support the object in the processing chamber. The microwave heating apparatus further includes a dielectric member provided between the object supported by the supporting members and the bottom wall while being apart from the object.

Abstract: A microwave heating apparatus includes a processing chamber for accommodating a target, a support device for supporting the target in the processing chamber and a microwave introducing device for generating microwaves to introduce them into the processing chamber. The processing chamber further includes a top wall having a plurality of microwave introduction ports to introduce the microwaves generated in the microwave introducing device into the processing chamber. Each of the microwave introduction ports has a rectangular shape having long sides and short sides parallel to inner wall surfaces of four sidewalls of the processing chamber, and the support device includes a support member to support the target and a rotating mechanism for rotating the supported target.