Abstract: A semiconductor device includes first to fourth electrodes, first to third semiconductor regions, and first and second insulating parts. The third electrode includes first to third electrode regions. The third electrode region connects the first electrode region and the second electrode region. The first insulating part includes first to third insulating regions. The first insulating region includes first and second insulating portions. The second insulating region includes third and fourth insulating portions. The third insulating region connects the first insulating region and the second insulating region. The third insulating region includes fifth and sixth insulating portions. A lower end of the sixth insulating portion is positioned lower than a lower end of the second insulating portion and a lower end of the fourth insulating portion.

Abstract: A semiconductor device includes a first conductive part, a second conductive part, a third conductive part, a first insulating part, and a semiconductor part of a first conductivity type. The second conductive part is separated from the first conductive part in a first direction. The third conductive part arranged with a portion of the second conductive part in a second direction crossing the first direction. The first insulating part includes a first insulating region located between the third conductive part and the portion of the second conductive part. The semiconductor part includes a first semiconductor region and a second semiconductor region. The first semiconductor region is located between the first conductive part and the second conductive part. The second semiconductor region is located between the first insulating region and the portion of the second conductive part. The second semiconductor region has a Schottky junction with the second conductive part.

Abstract: A semiconductor device includes a first conductive part, a second conductive part, a third conductive part, a first insulating part, and a semiconductor part of a first conductivity type. The second conductive part is separated from the first conductive part in a first direction. The third conductive part arranged with a portion of the second conductive part in a second direction crossing the first direction. The first insulating part includes a first insulating region located between the third conductive part and the portion of the second conductive part. The semiconductor part includes a first semiconductor region and a second semiconductor region. The first semiconductor region is located between the first conductive part and the second conductive part. The second semiconductor region is located between the first insulating region and the portion of the second conductive part. The second semiconductor region has a Schottky junction with the second conductive part.

Abstract: According to one embodiment, a semiconductor device includes: a semiconductor layer including a first plane extending along a plane including a first axis and a second axis; a first electrode extending along the first axis; a second electrode extending along the second axis; and a third electrode above the first plane. The third electrode is electrically coupled to the first electrode and the second electrode, and includes a first portion, a second portion and a third portion. The first portion crosses the first electrode. The second portion crosses the second electrode. The third portion crosses the second electrode and is separate at a first end from the second portion.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second electrode, a gate electrode, second semiconductor regions of a second conductivity type, third semiconductor regions of the first conductivity type, and a third electrode. The second electrode is provided in a plurality in second and third directions. Each second electrode opposes a portion of the first semiconductor region in the second and third directions with an insulating layer interposed. The gate electrode is provided around each second electrode. The first semiconductor region includes first regions provided respectively around the second electrodes and the second region provided around the first regions in the second and third directions. Impurity concentration of the first conductivity type in each of the first regions is higher than impurity concentration of the first conductivity type in the second region.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a conductive member, a semiconductor member, and an insulating member. The conductive member includes a conductive member end portion and a conductive member other-end portion. The conductive member end portion is between the first electrode and the conductive member other-end portion. The conductive member is electrically connected with one of the second electrode or the third electrode. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The first partial region is between the first and second electrodes. The second semiconductor region is between the first partial region and the third semiconductor region. The third semiconductor region is electrically connected with the second electrode.

Abstract: According to one embodiment, a control circuit includes a first bias terminal, a second bias terminal, an input-side terminal, a diode, a capacitor, a first transistor, a second transistor, and an output-side terminal. The first transistor includes a first control terminal configured to turn on and off electrical conduction between a third terminal and a fourth terminal. The second transistor includes a second control terminal configured to turn on and off electrical conduction between a fifth terminal and a sixth terminal. A control signal based on a signal input to the input-side terminal is input to the first control terminal and the second control terminal, and the first transistor and the second transistor are alternately turned on and alternately turned off.

Abstract: A semiconductor device according to one embodiment includes: a first electrode; a first semiconductor region of a first conductivity type disposed above the first electrode; an insulating film disposed in the first semiconductor region; a second electrode disposed in the insulating film; a second semiconductor region of a second conductivity type adjacent to the second electrode via the insulating film; a third semiconductor region of the first conductivity type disposed on the second semiconductor region; and a third electrode that is in contact with the first semiconductor region to form a Schottky junction on a first side surface, is in contact with the second semiconductor region and the third semiconductor region on a second side surface opposite to the first side surface, includes a contact portion having a bottom surface located above a bottom surface of the second semiconductor region, and is electrically coupled to the contact portion.

Abstract: A semiconductor device includes semiconductor elements, an insulating member, first and second terminals and control terminals. The semiconductor elements each include a semiconductor part, a first electrode on the back surface of the semiconductor part, a second electrode and a control electrode on the front surface thereof. The semiconductor elements are electrically connected in series and include first-end and second-end semiconductor elements each provided at an end of the series connection. The insulating member seals the semiconductor elements and includes a first surface and a second surface opposite to the first surface. The first and second terminals are electrically connected to the first electrode of the first-end semiconductor element and the second electrode of the second-end semiconductor element, respectively. Each control terminal is electrically connected to the control electrode.

Abstract: A semiconductor device includes first to third conductive portions, a first insulating portion, and a semiconductor portion. The semiconductor portion includes a first semiconductor region provided between the first conductive portion and the second conductive portion, and a second semiconductor region provided between the second conductive portion and the first insulating region. The second conductive portion includes a first conductive region in Schottky junction with the first semiconductor region, and a second conductive region in Schottky junction with the second semiconductor region. When the first conductivity-type is an n-type, a work function of the first conductive region is smaller than a work function of the second conductive region. When the first conductivity-type is a p-type, the work function of the first conductive region is larger than the work function of the second conductive region.

Abstract: According to one embodiment, a semiconductor device include first to third electrode, a semiconductor member, a first conductive member, and a first insulating member. A second insulating region of the first insulating member includes a first face facing the third partial region of the first semiconductor region. The third insulating region of the first insulating member includes a second face facing the third partial region of the first semiconductor region. The first face includes a first end on a side of the first electrode in the first direction. The second face includes a second end on a side of the second electrode in the first direction. A second position of the second end in the second direction is different from a first position of the first end in the second direction.

Abstract: A semiconductor device includes: a first electrode; a semiconductor part located on the first electrode; a second electrode located in a first region on the semiconductor part; a third electrode located in a second region on the semiconductor part; an insulating member located in the semiconductor part in the first and second regions; a fourth electrode located in the insulating member in the first and second regions; a fifth electrode located in the insulating member between the first electrode and the fourth electrode in the first and second regions; and a conductive member located at least in the second region. The conductive member is connected to the third, fourth, and fifth electrodes.

Abstract: A semiconductor device includes a semiconductor part, first to third and control electrodes. The first electrode is provided on a back surface of the semiconductor part; and the second electrode is provided on a front surface thereof. The third electrode is provided between the first and second electrodes. The third electrode extends into the semiconductor part from the front surface side thereof. The third electrode is electrically insulated from the semiconductor part via an insulating space between the semiconductor part and the third electrode. The control electrode includes first and second portions. The first portion is linked to the second portion and extends between the semiconductor part and the third electrode. The second portion is provided between the second electrode and the third electrode. The first portion faces the insulating space via the third electrode; and the second portion extends between the insulating space and the second electrode.

Abstract: A semiconductor device includes a first electrode, a second electrode located on the first electrode, a semiconductor part located between the first electrode and the second electrode, a first interconnect located between the semiconductor part and the second electrode, a third electrode located in the semiconductor part and separated from the semiconductor part, a fourth electrode located lower than the third electrode in the semiconductor part, a first plug connecting the second electrode to the fourth electrode, and a second plug. The third electrode includes a ring portion, and an extension portion extending from the ring portion into an interior of the ring portion. The fourth electrode is located in the interior of the ring portion in a plane perpendicular to a vertical direction. The fourth electrode is separated from the semiconductor part. The second plug connects the first interconnect to the extension portion.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second electrode, a gate electrode, second semiconductor regions of a second conductivity type, third semiconductor regions of the first conductivity type, and a third electrode. The second electrode is provided in a plurality in second and third directions. Each second electrode opposes a portion of the first semiconductor region in the second and third directions with an insulating layer interposed. The gate electrode is provided around each second electrode. The first semiconductor region includes first regions provided respectively around the second electrodes and the second region provided around the first regions in the second and third directions. Impurity concentration of the first conductivity type in each of the first regions is higher than impurity concentration of the first conductivity type in the second region.

Abstract: A semiconductor device includes: a first electrode; a first semiconductor layer; a first insulating film extending downward from an upper surface of the first semiconductor layer, the first insulating film being columnar; a second electrode located in the first insulating film, the second electrode extending in a vertical direction, the second electrode being columnar; a second semiconductor layer partially provided in an upper layer portion of the first semiconductor layer, the second semiconductor layer being next to the first insulating film with the first semiconductor layer interposed; a third semiconductor layer partially provided in an upper layer portion of the second semiconductor layer; and a third electrode located higher than the upper surface of the first semiconductor layer, the third electrode overlapping a portion of the first insulating film, a portion of the first semiconductor layer, and a portion of the second semiconductor layer when viewed from above.

Abstract: According to one embodiment, a semiconductor device includes: a semiconductor layer including a first plane extending along a plane including a first axis and a second axis; a first electrode extending along the first axis; a second electrode extending along the second axis; and a third electrode above the first plane. The third electrode is electrically coupled to the first electrode and the second electrode, and includes a first portion, a second portion and a third portion. The first portion crosses the first electrode. The second portion crosses the second electrode. The third portion crosses the second electrode and is separate at a first end from the second portion.

Abstract: According to one embodiment, a semiconductor device includes a first element. The first element includes a first conductive member, a second conductive member, a first semiconductor member, a third conductive member, and a third conductive member wiring. The first conductive member includes a first conductive portion including a first face and a second conductive portion including a second face. The second conductive member includes a third conductive portion including a third face and a fourth conductive portion including a fourth face. The fourth conductive portion includes a facing conductive portion. The first semiconductor member is of a first conductive type. The first semiconductor member includes a first partial region, a second partial region and a third partial region. The third partial region includes a facing face facing the facing conductive portion. The third conductive member wiring is electrically connected to the third conductive member.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second electrode, a gate electrode, second semiconductor regions of a second conductivity type, third semiconductor regions of the first conductivity type, and a third electrode. The second electrode is provided in a plurality in second and third directions. Each second electrode opposes a portion of the first semiconductor region in the second and third directions with an insulating layer interposed. The gate electrode is provided around each second electrode. The first semiconductor region includes first regions provided respectively around the second electrodes and the second region provided around the first regions in the second and third directions. Impurity concentration of the first conductivity type in each of the first regions is higher than impurity concentration of the first conductivity type in the second region.

Abstract: According to one embodiment, a semiconductor device includes: a semiconductor layer including a first plane extending along a plane including a first axis and a second axis; a first electrode extending along the first axis; a second electrode extending along the second axis; and a third electrode above the first plane. The third electrode is electrically coupled to the first electrode and the second electrode, and includes a first portion, a second portion and a third portion. The first portion crosses the first electrode. The second portion crosses the second electrode. The third portion crosses the second electrode and is separate at a first end from the second portion.