Patents by Inventor Tatsuya Nishiwaki

Tatsuya Nishiwaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150167150
    Abstract: A method for forming an alignment film for a liquid crystal on a substrate and an associated at least one structure. The substrate is moved in a first direction. A target is disposed on the first surface side of the substrate. The ion beam is propagated from an ion source toward the substrate and impinges on a sputtering surface of the target, which sputters a material of the target and results in sputtered particles of the material being emitted from the sputtering surface of the target and deposited on the first surface side of the substrate to form (i) a sputtering film on the first surface side of the substrate and (ii) an alignment film having an orientation and being disposed on the sputtering film and on the entire surface of the substrate. The alignment film aligns molecules of the liquid crystal in a predetermined direction.
    Type: Application
    Filed: February 23, 2015
    Publication date: June 18, 2015
    Inventors: Shoichi Doi, Tatsuya Nishiwaki
  • Patent number: 9034151
    Abstract: An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate.
    Type: Grant
    Filed: July 17, 2008
    Date of Patent: May 19, 2015
    Assignee: International Business Machines Corporation
    Inventors: Shoichi Doi, Tatsuya Nishiwaki
  • Patent number: 8884364
    Abstract: A semiconductor device includes: a drain layer; a drift layer provided on the drain layer; a base region provided on the drift layer; a source region selectively provided on a surface of the base region; a first gate; a field-plate; a second gate; a drain electrode; and a source electrode. The first gate electrode is provided in each of a plurality of first trenches via a first insulating film. The first trenches penetrate from a surface of the source region through the base region and contact the drift layer. The field-plate electrode is provided in the first trench under the first gate electrode via a second insulating film. The second gate electrode is provided in a second trench via a third insulating film. The second trench penetrates from the surface of the source region through the base region and contacts the drift layer between the first trenches.
    Type: Grant
    Filed: December 2, 2013
    Date of Patent: November 11, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Tatsuya Nishiwaki
  • Patent number: 8872192
    Abstract: A rectifier circuit has a rectifier element and a unipolar field-effect transistor connected in series between a first terminal and a second terminal. The rectifier element comprises a first electrode and a second electrode disposed in a direction of a forward current flowing from the first terminal to the second terminal. The field-effect transistor has a gate electrode having a potential identical to a potential at the first electrode, and a source electrode and a drain electrode connected in series to the rectifier element and passing a current depending on the potential at the gate electrode. A breakdown voltage between the gate electrode and drain electrode of the field-effect transistor in a reverse bias mode, where a potential at the second terminal is higher than a potential at the first terminal, being set higher than a breakdown voltage of the rectifier element.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: October 28, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tatsuya Nishiwaki, Akira Yoshioka, Yasunobu Saito, Masatoshi Arai
  • Publication number: 20140284708
    Abstract: According to an embodiment, a method for manufacturing a semiconductor device includes forming a gate trench extending into a first semiconductor layer; forming a gate insulating film on an internal wall of the gate trench; forming a polysilicon in the gate trench; etching the polysilicon into the gate trench; forming an interlayer insulating film on the polysilicon; etching the first semiconductor layer so as to project the interlayer insulating film from the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer; forming a third semiconductor layer on the second semiconductor layer; forming a sidewall contacting a side face of the interlayer insulating film; forming a fourth semiconductor layer of the second conductivity type in the second semiconductor layer; and forming a first electrode electrically connected to the third semiconductor layer and the fourth semiconductor layer.
    Type: Application
    Filed: January 21, 2014
    Publication date: September 25, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tatsuya Nishiwaki, Yoshitaka Hokomoto, Masatoshi Arai
  • Publication number: 20140084365
    Abstract: A semiconductor device includes: a drain layer; a drift layer provided on the drain layer; a base region provided on the drift layer; a source region selectively provided on a surface of the base region; a first gate; a field-plate; a second gate; a drain electrode; and a source electrode. The first gate electrode is provided in each of a plurality of first trenches via a first insulating film. The first trenches penetrate from a surface of the source region through the base region and contact the drift layer. The field-plate electrode is provided in the first trench under the first gate electrode via a second insulating film. The second gate electrode is provided in a second trench via a third insulating film. The second trench penetrates from the surface of the source region through the base region and contacts the drift layer between the first trenches.
    Type: Application
    Filed: December 2, 2013
    Publication date: March 27, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventor: Tatsuya NISHIWAKI
  • Patent number: 8629505
    Abstract: A semiconductor device includes: a drain layer; a drift layer provided on the drain layer; a base region provided on the drift layer; a source region selectively provided on a surface of the base region; a first gate; a field-plate; a second gate; a drain electrode; and a source electrode. The first gate electrode is provided in each of a plurality of first trenches via a first insulating film. The first trenches penetrate from a surface of the source region through the base region and contact the drift layer. The field-plate electrode is provided in the first trench under the first gate electrode via a second insulating film. The second gate electrode is provided in a second trench via a third insulating film. The second trench penetrates from the surface of the source region through the base region and contacts the drift layer between the first trenches.
    Type: Grant
    Filed: March 21, 2011
    Date of Patent: January 14, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Tatsuya Nishiwaki
  • Publication number: 20130341641
    Abstract: A rectifier circuit has a rectifier element and a unipolar field-effect transistor connected in series between a first terminal and a second terminal. The rectifier element comprises a first electrode and a second electrode disposed in a direction of a forward current flowing from the first terminal to the second terminal. The field-effect transistor has a gate electrode having a potential identical to a potential at the first electrode, and a source electrode and a drain electrode connected in series to the rectifier element and passing a current depending on the potential at the gate electrode. A breakdown voltage between the gate electrode and drain electrode of the field-effect transistor in a reverse bias mode, where a potential at the second terminal is higher than a potential at the first terminal, being set higher than a breakdown voltage of the rectifier element.
    Type: Application
    Filed: February 28, 2013
    Publication date: December 26, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tatsuya NISHIWAKI, Akira YOSHIOKA, Yasunobu SAITO, Masatoshi ARAI
  • Publication number: 20130277734
    Abstract: According to one embodiment, a semiconductor device includes a first semiconductor region; a second semiconductor region having a side face and a lower face, and the faces surrounded by the first semiconductor region; a third semiconductor region provided between the second semiconductor region and the first semiconductor region; a fourth semiconductor region being in contact with an outer side face of the first semiconductor region; a plurality of first electrodes being in contact with the second semiconductor region, the third semiconductor region, and the first semiconductor region via an insulating film; a plurality of pillar areas extending from the third semiconductor region toward the fourth semiconductor region, each of the plurality of pillar areas being provided between adjacent ones of the plurality of first electrodes. An impurity density of each of the pillar areas and an impurity density of the third semiconductor region is substantially the same.
    Type: Application
    Filed: August 31, 2012
    Publication date: October 24, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Toshifumi NISHIGUCHI, Keiko KAWAMURA, Hideki OKUMURA, Tatsuya NISHIWAKI
  • Publication number: 20130248995
    Abstract: A semiconductor device includes a first semiconductor layer of a first conductivity type, a base layer of a second conductivity type placed above the first semiconductor layer, a second semiconductor layer of the first conductivity type placed above the base layer, multiple gate electrodes having upper end is positioned above the upper surface of the base layer, a lower end positioned below the bottom of the base layer, and contacting the first semiconductor layer, the second semiconductor layer, and the base layer through a gate insulating film, insulating component arranged above the gate electrode in which the upper surface is positioned below the upper surface of the second semiconductor layer, and a conductive layer covering the second semiconductor layer from the upper end to the bottom end.
    Type: Application
    Filed: September 7, 2012
    Publication date: September 26, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tatsuya NISHIWAKI, Tsuyoshi Ota, Norio Yasuhara, Masatoshi Arai, Takahiro Kawano
  • Publication number: 20130248998
    Abstract: According to one embodiment, a semiconductor device includes, a drain, source, base and drift regions, a gate electrode, a gate insulating film, a first semiconductor region, a drain electrode, and a source electrode. The drain region has a first portion, and a second portion having a surface extending in a first direction which is vertical to a main surface of the first portion. The source region extends in a second direction which is parallel to the second portion, and is provided to be spaced from the drain region. The gate electrode extends in the first direction and a third direction which is vertical to the first direction and the second direction, and passes through the base region in the third direction. The first semiconductor region is provided between the gate insulating film and the drain region, and has a lower impurity concentration than the drift region.
    Type: Application
    Filed: September 14, 2012
    Publication date: September 26, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Shinichiro Misu, Tsuyoshi Ota, Tatsuya Nishiwaki, Takeshi Uchihara, Yusuke Kawaguchi
  • Patent number: 8502305
    Abstract: According to an embodiment, a semiconductor device includes a semiconductor layer of a first conductive type, a base region of a second conductive type provided on the semiconductor layer and a first contact region of a second conductive type provided on the base region. The device includes a gate electrode provided in a trench piercing through the first contact region and the base region, and an interlayer insulating film provided on the gate electrode and containing a first conductive type impurity element. The device further includes a source region of a first conductive type provided between the interlayer insulating film and the first contact region, the source region being in contact with a side face of the interlayer insulating film and extending in the base region.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: August 6, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsuyoshi Ohta, Tatsuya Nishiwaki, Norio Yasuhara, Masatoshi Arai, Takahiro Kawano
  • Publication number: 20130069147
    Abstract: According to an embodiment, a semiconductor device includes a semiconductor layer of a first conductive type, a base region of a second conductive type provided on the semiconductor layer and a first contact region of a second conductive type provided on the base region. The device includes a gate electrode provided in a trench piercing through the first contact region and the base region, and an interlayer insulating film provided on the gate electrode and containing a first conductive type impurity element. The device further includes a source region of a first conductive type provided between the interlayer insulating film and the first contact region, the source region being in contact with a side face of the interlayer insulating film and extending in the base region.
    Type: Application
    Filed: March 15, 2012
    Publication date: March 21, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tsuyoshi OHTA, Tatsuya NISHIWAKI, Norio YASUHARA, Masatoshi ARAI, Takahiro KAWANO
  • Publication number: 20120061753
    Abstract: A semiconductor device includes: a drain layer; a drift layer provided on the drain layer; a base region provided on the drift layer; a source region selectively provided on a surface of the base region; a first gate; a field-plate; a second gate; a drain electrode; and a source electrode. The first gate electrode is provided in each of a plurality of first trenches via a first insulating film. The first trenches penetrate from a surface of the source region through the base region and contact the drift layer. The field-plate electrode is provided in the first trench under the first gate electrode via a second insulating film. The second gate electrode is provided in a second trench via a third insulating film. The second trench penetrates from the surface of the source region through the base region and contacts the drift layer between the first trenches.
    Type: Application
    Filed: March 21, 2011
    Publication date: March 15, 2012
    Applicant: Kabushiki Kaisha Toshiba
    Inventor: Tatsuya NISHIWAKI
  • Patent number: 7525107
    Abstract: An apparatus and method for forming an alignment layer with uniform orientation is provided. An alignment layer-forming apparatus includes an ion source for generating ion beams and one or more masks disposed between the ion source and a substrate. The masks each have a reflective face directed to the substrate. The ion beams are reflected between the reflective face of each mask and a thin-film which is disposed on the substrate and which is processed into an alignment layer, whereby the alignment layer is formed with the ion beam finally applied to the thin-film. The orientation of a liquid crystal can be rendered uniform by varying the shape and/or arrangement of the reflective face of the mask. Hence, a liquid crystal display with no brightness or color non-uniformity can be manufactured.
    Type: Grant
    Filed: December 5, 2006
    Date of Patent: April 28, 2009
    Assignee: International Business Machines Corporation
    Inventors: Johji Nakagaki, Akihiro Asahara, Hideo Kimura, Hiroaki Kitahara, Tatsuya Nishiwaki, Yasuhiko Shiota, Takeshi Yamada
  • Publication number: 20090050469
    Abstract: An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate.
    Type: Application
    Filed: July 17, 2008
    Publication date: February 26, 2009
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Shoichi Doi, Tatsuya Nishiwaki
  • Publication number: 20080011969
    Abstract: An apparatus and method for forming an alignment layer with uniform orientation is provided. An alignment layer-forming apparatus includes an ion source for generating ion beams and one or more masks disposed between the ion source and a substrate. The masks each have a reflective face directed to the substrate. The ion beams are reflected between the reflective face of each mask and a thin-film which is disposed on the substrate and which is processed into an alignment layer, whereby the alignment layer is formed with the ion beam finally applied to the thin-film. The orientation of a liquid crystal can be rendered uniform by varying the shape and/or arrangement of the reflective face of the mask. Hence, a liquid crystal display with no brightness or color non-uniformity can be manufactured.
    Type: Application
    Filed: December 5, 2006
    Publication date: January 17, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Johji Nakagaki, Akihiro Asahara, Hideo Kimura, Hiroaki Kitahara, Tatsuya Nishiwaki, Yasuhiko Shiota, Takeshi Yamada