Abstract: A semiconductor device according to an embodiment includes: a first semiconductor region of a first conductive type; a base region of a second conductive type; gate electrodes penetrating through the base region to reach the first semiconductor region; gate insulating films around the plurality of gate electrodes; a first region having a source region of the first conductive type, among a plurality of regions between the plurality of gate insulating films; a second region not having the source region among the plurality of regions, the second region being located in a terminal region of the first region; a first contact of a first width in the first region and electrically connecting the base region and a source electrode; and a second contact of a second width larger than the first width, the second contact being in the second region and electrically connecting the base region and the source electrode.

Abstract: According to one embodiment, there is provided a semiconductor device including a semiconductor substrate, a plurality of first columnar bodies having a peripheral edge, each of the columnar bodies spaced from one another on the semiconductor substrate, each including a first conductive layer extending from an upper end thereof in the depth direction of the semiconductor substrate, a base layer deposited about an outer peripheral surface of an upper end of the plurality of first columnar bodies, a gate adjacent to the base layer with a gate insulating film therebetween, a source layer connected to the base layer, and a second columnar body, including a second conductive layer, surrounding an outer peripheral edge of the plurality of first columnar bodies and extending in the depth direction of the semiconductor substrate.

Abstract: A semiconductor device has a cell which includes a first semiconductor region of a first conductive type, a base region of a second conductive type on the first semiconductor region, a source region of the first conductive type on the base region, a gate electrode penetrating through the base region in a first direction to reach the first semiconductor region and extending in a second direction, and a gate insulting film between the gate electrode and the first semiconductor region, between the gate electrode and the base region, and between the gate electrode and the source region. The cell has a region having a first threshold voltage and a region having a second threshold voltage higher than the first threshold voltage.

Abstract: A semiconductor device according to an embodiment includes: a first semiconductor region of a first conductive type; a base region of a second conductive type; gate electrodes penetrating through the base region to reach the first semiconductor region; gate insulating films around the plurality of gate electrodes; a first region having a source region of the first conductive type, among a plurality of regions between the plurality of gate insulating films; a second region not having the source region among the plurality of regions, the second region being located in a terminal region of the first region; a first contact of a first width in the first region and electrically connecting the base region and a source electrode; and a second contact of a second width larger than the first width, the second contact being in the second region and electrically connecting the base region and the source electrode.

Abstract: A semiconductor device includes an anode electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a conductive portion and a cathode electrode. The first semiconductor region is electrically connected to the anode electrode. The second semiconductor region is provided on the first semiconductor region. The conductive portion is provided in the first semiconductor region and the second semiconductor region with an insulating layer interposed between the conductive portion and the first and second semiconductor regions. The cathode electrode is electrically connected to the conductive portions and is electrically isolated from the second semiconductor region.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having first and second surfaces and an impurity concentration distribution in a first direction from the second surface to the first surface, a first semiconductor region of a second conductivity between the semiconductor layer and the first surface, a second semiconductor region of a first conductivity type between the first semiconductor region and the first surface side, a first trench extending from the first surface into the semiconductor layer, a first electrode located in the first trench over a first insulating film and spaced from the first semiconductor region by a first insulating film, a second electrode located in the first trench over a second insulating film, a second trench extending from the first surface into the semiconductor layer and surrounding the first trench, and a third electrode located in the second trench over a third insulating film.

Abstract: A semiconductor device which includes a semiconductor layer, a first electrode, a second electrode, first trenches, a second trench surrounding the first trenches, a gate electrode and a first field plate electrode in the first trenches, a first insulating layer including a first portion p having a first film thickness, a second portion having a second film thickness thicker than the first film thickness, and a third portion having a third film thickness thicker than the second film thickness, a second field plate electrode in the second trench, a second insulating layer in the second trench. The semiconductor layer includes a first semiconductor region having a first conductivity type, a second semiconductor region having a second conductivity type, and a third semiconductor region having the second conductivity type.

Abstract: A semiconductor device includes an anode electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a conductive portion and a cathode electrode. The first semiconductor region is electrically connected to the anode electrode. The second semiconductor region is provided on the first semiconductor region. The conductive portion is provided in the first semiconductor region and the second semiconductor region with an insulating layer interposed between the conductive portion and the first and second semiconductor regions. The cathode electrode is electrically connected to the conductive portions and is electrically isolated from the second semiconductor region.

Abstract: A semiconductor device includes an anode electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a conductive portion and a cathode electrode. The first semiconductor region is electrically connected to the anode electrode. The second semiconductor region is provided on the first semiconductor region. The conductive portion is provided in the first semiconductor region and the second semiconductor region with an insulating layer interposed between the conductive portion and the first and second semiconductor regions. The cathode electrode is electrically connected to the conductive portions and is electrically isolated from the second semiconductor region.

Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type on the first semiconductor region, a third semiconductor region of the first conductivity type on the second semiconductor region, a first electrode surrounded by the first semiconductor region, a first insulating portion between a first part of the first electrode and the first semiconductor region, a second insulating portion having a higher dielectric constant than the first insulating portion, between a second part of the first electrode and the first semiconductor region, a gate electrode above the first electrode, and a gate insulating portion between the second semiconductor region and the gate electrode.

Abstract: A semiconductor device includes an anode electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a conductive portion and a cathode electrode. The first semiconductor region is electrically connected to the anode electrode. The second semiconductor region is provided on the first semiconductor region. The conductive portion is provided in the first semiconductor region and the second semiconductor region with an insulating layer interposed between the conductive portion and the first and second semiconductor regions. The cathode electrode is electrically connected to the conductive portions and is electrically isolated from the second semiconductor region.

Abstract: A semiconductor device includes an anode electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a conductive portion and a cathode electrode. The first semiconductor region is electrically connected to the anode electrode. The second semiconductor region is provided on the first semiconductor region. The conductive portion is provided in the first semiconductor region and the second semiconductor region with an insulating layer interposed between the conductive portion and the first and second semiconductor regions. The cathode electrode is electrically connected to the conductive portions and is electrically isolated from the second semiconductor region.

Abstract: In some embodiments, a semiconductor device includes a semiconductor chip including a first terminal, a second terminal and a third terminal, a frame electrically coupled to the second terminal, the frame mounting the semiconductor chip, a first conductor including a chip connection electrically coupled to the first terminal, a first connection connecting to the chip connection and protruding from the chip connection, and a second connection connecting to the chip connection, protruding from the chip connection, and being provided physically spaced from the first connection. The semiconductor device further includes a second conductor electrically coupled to the third terminal.

Abstract: A semiconductor device includes an anode electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a conductive portion and a cathode electrode. The first semiconductor region is electrically connected to the anode electrode. The second semiconductor region is provided on the first semiconductor region. The conductive portion is provided in the first semiconductor region and the second semiconductor region with an insulating layer interposed between the conductive portion and the first and second semiconductor regions. The cathode electrode is electrically connected to the conductive portions and is electrically isolated from the second semiconductor region.

Abstract: A semiconductor device is provided including a first electrode and a first semiconductor layer of a first conductivity type connected to the first electrode. The semiconductor device further includes a second semiconductor layer of a second conductivity type provided on the first semiconductor layer, a third semiconductor layer of the first conductivity type provided on the second semiconductor layer, and a second electrode provided on the third semiconductor layer. The semiconductor device further includes a third electrode disposed between the first electrode and the second electrode. The semiconductor device further includes a fourth electrode having an upper end connected to the second electrode, where the fourth electrode has a higher resistivity than the second electrode.

Abstract: A method for forming an alignment film for a liquid crystal on a substrate and an associated at least one structure. The substrate is moved in a first direction. A target is disposed on the first surface side of the substrate. The ion beam is propagated from an ion source toward the substrate and impinges on a sputtering surface of the target, which sputters a material of the target and results in sputtered particles of the material being emitted from the sputtering surface of the target and deposited on the first surface side of the substrate to form (i) a sputtering film on the first surface side of the substrate and (ii) an alignment film having an orientation and being disposed on the sputtering film and on the entire surface of the substrate. The alignment film aligns molecules of the liquid crystal in a predetermined direction.

Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type on the first semiconductor region, a third semiconductor region of the first conductivity type on the second semiconductor region, a first electrode surrounded by the first semiconductor region, a first insulating portion between a first part of the first electrode and the first semiconductor region, a second insulating portion having a higher dielectric constant than the first insulating portion, between a second part of the first electrode and the first semiconductor region, a gate electrode above the first electrode, and a gate insulating portion between the second semiconductor region and the gate electrode.

Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a conductive layer, a gate electrode, and a first electrode. The conductive layer includes a first portion, a second portion, and a third portion. The first portion is surrounded by the first semiconductor region via a first insulating portion. The second portion extends in a second direction, is provided on the first semiconductor region, and is provided on the second region. The third portion is connected between the first portion and the second portion and extends in a third direction. The first electrode is electrically connected to the third semiconductor region and the conductive layer. The second portion electrically connects the first electrode to the third portion.

Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a conductive layer, a gate electrode, and a first electrode. The conductive layer includes a first portion, a second portion, and a third portion. The first portion is surrounded by the first semiconductor region via a first insulating portion. The second portion extends in a second direction, is provided on the first semiconductor region, and is provided on the second region. The third portion is connected between the first portion and the second portion and extends in a third direction. The first electrode is electrically connected to the third semiconductor region and the conductive layer. The second portion electrically connects the first electrode to the third portion.

Abstract: According to one embodiment, a semiconductor device comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a gate interconnect, a second insulating layer, and a first electrode. The first semiconductor region includes a first region and a second region provided around the first region. The gate interconnect is provided on the second region. The gate interconnect includes a first portion and a second portion provided around the second portion. A thickness in the first direction of the second portion is thinner than a thickness in the first direction of the first portion. A length in the second direction of the gate interconnect is longer than a length in the third direction of the gate electrode. The first electrode contacts the gate interconnect.