Abstract: An organic semiconductor device includes a carrier, a source, a drain, an organic semiconductor single-crystalline channel layer, an organic insulation layer and a gate. The source and the drain are disposed on an upper surface of the carrier. The source and the drain are disposed in parallel and a portion of the carrier is exposed between the source and the drain. The organic semiconductor single-crystalline channel layer is disposed on the upper surface of the carrier and covers a portion of the source, a portion of the drain and the portion of the carrier exposed by the source and the drain. The organic insulation layer covers the carrier, the source, the drain and the organic semiconductor single-crystalline channel layer. The gate is disposed on the organic insulation layer and corresponds to a position of the portion of the carrier exposed by the source and the drain.

Abstract: An organic light emitting display device includes a substrate, a transparent electrode layer, a source/drain layer, an IGZO semiconductor layer, a first insulating layer, a gate layer, a second insulating layer and an organic light emitting diode. The organic light-emitting display device can have a simplified manufacturing process. In addition, the present invention also provides a method for manufacturing the organic light-emitting display device.

Abstract: A lamp including a light source, a reflective unit and a light modulation module is provided. The light source provides an illuminating light, and the reflective unit reflects the illuminating light. The light modulation module is disposed between the light source and the reflective unit. In the light modulation module, a region where movable light absorbing materials exist is a light absorbing region, and a region where the movable light absorbing materials are absent is a light penetration region. By applying different electrical fields to the movable light absorbing materials, sizes and locations of the light absorbing region and the light penetration region can be changed. A portion of the illuminating light irradiating the light penetration region penetrates through the light penetration region, is transmitted to the reflective unit, being reflected by the reflective unit, and penetrates through the light penetration region again sequentially.

Abstract: A transistor and a manufacturing method thereof are provided. The transistor includes a first gate, a second gate disposed on one side of the first gate, a first semiconductor layer, a second semiconductor layer, an oxide layer, a first insulation layer, a second insulation layer, a source, and a drain. The first semiconductor layer is disposed between the first and second gates; the second semiconductor layer is disposed between the first semiconductor layer and the second gate. The oxide layer is disposed between the first semiconductor layer and the second semiconductor layer. The first insulation layer is disposed between the first gate and the first semiconductor layer; the second insulation layer is disposed between the second gate and the second semiconductor layer. The source and the drain are disposed between the first insulation layer and the second insulation layer and respectively disposed on opposite sides of the oxide layer.

Abstract: An intermediate structure of a flexible display device includes a substrate, an etching layer, a flexible substrate, and a display module. A trench structure is formed in a surface of the substrate. The etching layer is formed on the surface and covers the substrate. The flexible substrate is disposed on the etching layer. The flexible substrate and the substrate are spaced apart from each other by the etching layer. The display module is disposed on the flexible substrate. The flexible substrate can be peeled from the substrate without applying a mechanical force and thus the yield is improved, and the process time and the fabricating cost are also reduced. In addition, the present invention also provides a substrate for fabricating a flexible display device and a method for fabricating a flexible display device.

Abstract: A thin film transistor structure is provided. The thin film transistor structure includes a first transistor having a first active layer, a second transistor having a second active layer, a first protection layer contacting the first active layer, and a second protection layer contacting the second active layer. The oxygen contents of the first and the second protection layers are controlled to affect the oxygen vacancy number of the first and the second active layers to satisfy the various electronic requirements of the first and the second transistors.

Abstract: A display device includes a thin film transistor substrate, a display layer, a patterned color resist layer, a patterned UV block layer and a transparent protective layer. The thin film transistor substrate has a substrate and a plurality of thin film transistors. The display layer is disposed on the thin film transistor substrate. The patterned color resist layer is disposed on the display layer. The patterned UV block layer is disposed on the patterned color resist layer. The transparent protective layer is disposed on the patterned UV block layer. The present invention also provides a laser transfer printing method for fabricating the color resist layer and the patterned UV block layer.

Abstract: A thin film transistor is provided. In this thin film transistor, the thickness of the gate is increased. Therefore, the source and drain of this thin film transistor can be disposed on the side wall of the gate to decrease the occupied area of the thin film transistor. An array substrate and a display device using the thin film transistor are also provided.

Abstract: An electric apparatus including a display and a process unit is provided. The display has an active area and a peripheral area. The display panel including an active device array substrate, an opposite substrate opposite to the active device array substrate and a display medium between the active device array substrate and the opposite substrate. The active device array substrate has a plurality of active devices disposed in the active area and a humidity sensor disposed in the peripheral area. The humidity sensor is a thin film transistor having a metal oxide semiconductor layer. The process unit is electrically connected to the humidity sensor. The process unit calculates a humidity value according to a sensing current from the humidity sensor.

Abstract: A display device includes a substrate, a driving circuit, an E-paper display layer and a protective coating layer. The driving circuit is arranged on the substrate. The E-paper display layer is disposed on and driven by the driving circuit. The protective coating layer is coated on and in contact with the E-paper display layer. The protective coating layer can provide protection and better optical performance, and it is advantageous to the manufacturing method to overcome the problems such as bubbles and low light transmittance occurring in the conventional manufacturing method.

Abstract: An active device is disposed on a substrate. The active device includes a metal layer, a semiconductor channel layer, an insulating layer, a source and a drain. The metal layer has a metal oxide surface away from the substrate. The insulating layer is disposed between the metal layer and the semiconductor channel layer. The source and the drain are disposed at one side of the semiconductor channel layer. A portion of the semiconductor channel layer is exposed between the source and the drain. An orthogonal projection of the metal layer on the substrate at least covers an orthogonal projection of the portion of the semiconductor channel layer exposed by the source and the drain on the substrate.

Abstract: A thin film transistor is disclosed. The drain and source electrode layer of the thin film transistor is disposed on the substrate, in which the drain and source electrode layer is divided into a drain region and a source region. The semiconductor layer and the first insulating layer are disposed on the drain and source electrode layer, in which the first insulating layer has an upper limit of thickness. The second insulating layer is disposed on the semiconductor layer and the first insulating layer, in which the second insulating layer has a lower limit of thickness. The gate electrode layer is disposed on the second insulating layer. The passivation layer is disposed on the gate electrode layer, and the pixel electrode layer is disposed on the passivation layer.

Abstract: A display device is provided, which includes a transparent substrate, an active device array, a solar cell structure and an electrophoretic display film. The transparent substrate has an upper surface and a lower surface opposite to each other. The active device array has a plurality of pixel structures, in which the pixel structures are disposed on the upper surface of the transparent substrate. The solar cell structure is directly disposed on the lower surface of the transparent substrate. The electrophoretic display film is disposed over the transparent substrate and includes a transparent protection film, an electrode layer and a plurality of display media, in which the electrode layer is disposed between the transparent protection film and the display media and the display media are located between the electrode layer and the active device array.

Abstract: A driving substrate is disclosed. The driving substrate includes a first substrate. The first substrate has a display zone and a border zone surrounding the display zone. The border zone includes at least one active area and at least one non-active area. The active area includes a first conductive layer disposed on the first substrate. The non-active area connects the active area to form the border zone. A display using the driving substrate is also disclosed.

Abstract: An electrophoretic display apparatus including a substrate and an electrophoretic display film is provided. The substrate has multiple pixel units, each the pixel unit has a transparent region and a reflective region and each the pixel unit includes a pixel electrode and a reflective layer. The pixel electrode is located in the transparent region and the reflective region. The reflective layer is disposed on the pixel electrode and located in the reflective region. The electrophoretic display film is disposed on the substrate and includes a common electrode and multiple microcapsules disposed between the common electrode and the pixel units, in which each the microcapsule includes multiple black electrophoretic particles, and the arrangement of the black electrophoretic particles is controlled by a driving voltage applied between the pixel electrode of each the pixel unit and the common electrode of the electrophoretic display film.

Abstract: A display device includes a first substrate, a second substrate, a plurality of display units and a plurality of partitioning walls. The second substrate is disposed above the first substrate. The display units are disposed between the first substrate and the second substrate, and each of the display units has a dielectric solvent. The partitioning walls are disposed between adjacent display units correspondingly, and a dielectric constant of each of the partitioning walls is less than that of the dielectric solvent adjacent thereto. Because the dielectric constant of the partition walls is less than that of the dielectric solvent adjacent to the partition wall, a capacitance value induced at the partition wall by a driving voltage can be decreased. Thus, crosstalk phenomena can be avoided in the display unit that is not driven.

Abstract: A semiconductor device including a substrate, a metal layer, an insulating layer, a semiconductor layer, a drain and a source is provided. The substrate has a surface and a first cavity. The metal layer is disposed on the substrate and covers the surface and inner-wall of the first cavity to define a second cavity corresponding to the first cavity. The insulating layer covers the metal layer and inner-wall of the second cavity to define a third cavity corresponding to the second cavity. The semiconductor layer exposes out a portion of the insulating layer and covers the inner-wall of the third cavity to define a fourth cavity corresponding to the third cavity. The drain and source are disposed on the semiconductor layer and covers a portion of the semiconductor layer and a portion of the insulating layer, in which the drain and source expose out the fourth cavity.

Abstract: A display device includes an array substrate, a display medium layer, a transparent layer and a sealant. The array substrate has a first region and a second region surrounding the first region. The display medium layer is disposed on the array substrate and located in the first region. The transparent layer with an upper surface is disposed on the display medium layer. The upper surface has a display region and a predetermined sealing region surrounding the display region. The sealant is formed on the array substrate and located in the second region. Also, the sealant surrounds the transparent layer and the display medium layer and covers the predetermined sealing region of the transparent layer. In addition, a method for fabricating the display device is also provided. Since the sealant surrounds the transparent layer and the display medium layer and covers the predetermined sealing region of the transparent layer, the packaging performance of the above display device may be improved.

Abstract: A color filter substrate includes a transparent substrate, a color photoresist layer and an air guiding layer. The color photoresist layer is disposed on the transparent substrate. The air guiding layer is disposed on the substrate and surrounds the color photoresist layer. The air guiding layer includes a plurality of strip-shaped patterns disposed apart from each other. One end of each of the strip-shaped patterns is connected to the color photoresist layer, and the other end of each of the strip-shaped patterns extends toward a direction far away from the color photoresist layer. An air guiding groove is formed between each two adjacent strip-shaped patterns. A color display apparatus having the color filter substrate is also provided. The color filter substrate can be assembled to the display layer without producing air bubbles, and thereby improves display quality of the color display apparatus.

Abstract: A method for manufacturing an active array substrate is provided herein. The active array substrate can be manufactured by using only two photolithography process steps. The photolithography process step using a first photomask may be provided for forming a drain electrode, a source electrode, a data line and/or a data line connecting pad and a patterned transparent conductive layer, etc. The photolithography process step using a second photomask may be utilized for forming a gate electrode, a gate line, a gate insulating layer, a channel layer and/or a gate line connecting pad, and so forth.