Abstract: A display apparatus includes a driving substrate and an organic light emitting diode device. The driving substrate includes a display area, a non-display area, a substrate and a transparent driving element. The transparent driving element is disposed in the non-display area to form a transparent region. The organic light emitting diode device is disposed over the driving substrate and located in the display area to form a non-transparent region.

Abstract: A light sensitive display apparatus and an operating method thereof are disclosed herein. The light sensitive display apparatus includes a plurality of pixels, and the operating method of the light sensitive display apparatus includes the following steps. In a writing state, a first data voltage and a first gate voltage are provided to the pixels, and the pixels illuminated by light rays are switched to or kept in a first display state. In an erasing state, a second data voltage and a second gate voltage are provided to the pixels, and the pixels illuminated by light rays are switched to or kept in a second display state.

Abstract: A court border module using a display apparatus is disclosed, which uses piezoelectric elements to drive the display apparatus. When a ball hits a court border, which is defined by the display apparatus, a force is applied to the piezoelectric elements which then generate power to drive the corresponding part of the display apparatus. The color of the part of the display apparatus hit by the ball is switched. Therefore the change in the color of the court border can be observed by officials and others to instantly and objectively determine whether the ball has hit the court border.

Abstract: Disclosed herein is a thin film transistor. The thin film transistor is characterized in having a source interconnect layer and a drain interconnect layer. The source electrode and the drain electrode are respectively disposed above and in contact with the source interconnect layer and the drain interconnect layer. The semiconductor layer is in contact with both the source interconnect layer and the drain interconnect layer, but is not in contact with the source electrode and the drain electrode.

Abstract: A thin film transistor suitable for being disposed on a substrate is provided. The thin film transistor includes a gate electrode, an organic gate dielectric layer, a metal oxide semiconductor layer, a source electrode and a drain electrode. The gate electrode is disposed on the substrate. The organic gate dielectric layer is disposed on the substrate to cover the gate electrode. The source electrode, the drain electrode and the metal oxide semiconductor layer are disposed above the organic gate dielectric layer, and the metal oxide semiconductor layer contacts with the source electrode and the drain electrode. Because the channel layer of the thin film transistor is a layer of metal oxide semiconductor formed at a lower temperature, thus the thin film transistor can be widely applied into various display applications such as flexible display devices.

Abstract: A flexible electronic paper display apparatus includes a drive substrate and a display layer. The display layer is disposed on the drive substrate. The drive substrate includes a plastic substrate, a stainless steel layer, an insulation layer and a circuit unit. The stainless steel layer is disposed on the plastic substrate, the insulation layer is disposed on the stainless steel layer, and the circuit unit is disposed on the insulation layer. Production yield of the flexible electronic paper display apparatus can be increased. Additionally, a manufacturing method for the flexible electronic paper display apparatus is also provided.

Abstract: A thin film transistor (TFT) array substrate includes a substrate, a gate electrode layer disposed on the substrate, an insulating layer, an oxide semiconductor layer disposed on the insulating layer, a source/drain electrode layer, an organic-acrylic photoresist layer, a passivation layer and an electrically conductive layer. The insulating layer is disposed on the gate electrode layer and the substrate. The source/drain electrode layer is disposed on the insulating layer and the oxide semiconductor layer, and a gap is formed through the source/drain electrode layer for exposing the oxide semiconductor layer therethrough. The organic-acrylic photoresist layer covers the source/drain electrode layer. The passivation layer is disposed on the substrate, the oxide semiconductor layer and the organic-acrylic photoresist layer.

Abstract: A three-dimension circuit structure includes a substrate, a first conductive layer, a filled material and a second conductive layer. The substrate has an upper surface and a cavity located at the upper surface. The first conductive layer covers the inside walls of the cavity and protrudes out the upper surface. The filled material fills the cavity and covers the first conductive layer. The second conductive layer covers the filled material and a portion of the first conductive layer, and the first conductive layer and the second conductive layer encapsulate the filled material. The material of the filled material is different from that of the first conductive layer and the second conductive layer.

Abstract: A front light plate includes a transparent substrate, a first electrode layer disposed on the transparent substrate and including first electrodes arranged in parallel, a second electrode layer disposed opposite to the first electrode layer and including second electrodes arranged in parallel, and light emitting components. The light emitting components arranged in array are disposed between the first electrode layer and the second electrode layer and at overlapping positions of the first electrodes and the second electrodes. Each of the light emitting components has a top surface connected to the corresponding first electrode, a bottom surface connected to the corresponding second electrode and a side surface between the top surface and the bottom surface. The side surface is a light emitting surface. The front light plate has high brightness uniformity and high light utility efficiency.

Abstract: A driver circuit is provided. The driver circuit includes a first transistor for receiving a preceding gate signal to generate a first control signal, a second transistor for pulling down the first control signal according to a second control signal, a third transistor for outputting a clock signal according to the first control signal, a fourth transistor for pulling down the clock signal according to the second control signal, a fifth transistor connected to a high voltage source for outputting the second control signal, a sixth transistor for pulling down the second control signal according to the first control signal, a seventh transistor for receiving a next gate signal to pull down the first control signal, and a capacity. The preceding gate signal charges the capacitor to generate the first control signal.

Abstract: Disclosed herein is a color filter, which includes a first substrate, a patterned color, resist layer, a patterned passivation layer, an adhesive layer and a second substrate. The patterned color resist layer is disposed on the first substrate. The patterned passivation layer is stacked on the patterned color resist layer. The adhesive layer covers the patterned protective layer. The second substrate is disposed on the adhesive layer. A display device having the color filter is disclosed herein as well.

Abstract: A light sensing device is disclosed. The light sensing device includes a first light sensor and a second light sensor. The first light sensor formed on a substrate includes a first metal oxide semiconductor layer for absorbing a first light having a first waveband. The second light sensor formed on the substrate includes a second metal oxide semiconductor layer and an organic light-sensitive layer on the second metal oxide semiconductor layer for absorbing a second light having a second waveband.

Abstract: An active matrix organic light emitting diode pixel circuit includes an organic light emitting diode, a driving circuit, a switching circuit and a capacitor. In a charge state, by controlling the switching circuit, a first end of the capacitor is electrically coupled to a signal input terminal, and a second end of the capacitor is electrically coupled to a first power source. In a compensation state, by controlling the switching circuit, the first end of the capacitor is electrically coupled to the signal input terminal, and the second end of the capacitor is electrically coupled to an anode of the organic light emitting diode. In an emission state, by controlling the switching circuit, the first end of the capacitor is electrically coupled to the driving circuit, and the second end of the capacitor is electrically coupled to the driving circuit and the anode of the organic light emitting diode.

Abstract: Disclosed herein is a method for manufacturing an array substrate. The method includes forming a source electrode and a drain electrode on a substrate. A semiconductor layer, an organic insulating layer, and a gate electrode layer are sequentially formed to cover the substrate, the source electrode, and the drain electrode. A patterned photoresist layer is formed on the gate electrode layer. The exposed portion of the gate electrode layer, and a portion of the organic insulative layer and a portion of the semiconductor layer thereunder are removed to form a gate electrode. An organic passivation layer is formed on the gate electrode, the source electrode, and the drain electrode. The organic passivation layer has a contact window to expose a portion of the drain electrode. A pixel electrode is formed on the organic passivation layer and the exposed portion of the drain electrode.

Abstract: Disclosed herein is a thin film transistor array substrate. The thin film transistor array substrate includes a display area and a non-display area. The non-display area includes a signal line, a connecting line and a metal contact. The connecting line is formed in a first patterned metal layer. The signal line and the metal contact are formed in a second patterned metal layer. The connecting line is connected to the signal line by a first through-hole, and the connecting line is connected to the metal contact by a second through-hole Furthermore, a method of fabricating the thin film transistor array substrate is also disclosed.

Abstract: An exemplary driving substrate includes a substrate, a plurality of first and second signal transmission lines, a first insulation layer and a plurality of switch devices. The first signal transmission lines are disposed on the substrate, and each includes a first line segment(s) and a first connecting segment(s). The first insulation layer is disposed between each first line segment and each first connecting segment, and each first connecting segment is electrically connected to the adjacent first line segment(s) through an opening(s) of the first insulation layer. The second signal transmission lines are disposed on the substrate and electrically insulated and intersected with the first signal transmission lines thereby defining a plurality of pixel regions on the substrate. The switch devices are respectively disposed in the pixel regions, and each is electrically connected to corresponding first and second signal transmission lines. The driving substrate has better reliability.

Abstract: A manufacturing method for a flexible display apparatus is provided. A rigid substrate is provided. A flexible substrate having a supporting portion and a cutting portion surrounding the supporting portion is provided. A first adhesive material is formed between the rigid substrate and the cutting portion of the flexible substrate, so that the flexible substrate is adhered onto the rigid substrate by the first adhesive material. The first adhesive material does not locate on the supporting portion of the flexible substrate. At least a display unit is formed on the supporting portion of the flexible substrate. The supporting portion and the cutting portion of the flexible substrate are separated so as to separate the rigid substrate and the flexible substrate, wherein the flexible substrate and the display unit thereon form a flexible display apparatus. In the method, the flexible substrate and the rigid substrate can be easily separated.

Abstract: A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.

Abstract: An OLED driving circuit is provided. The OLED driving circuit comprises a switch transistor, a storage capacitor, a driving transistor and a control module. In a charging time period, a charging switch of the control module is conducted to connect the storage capacitor and a first voltage end and a data signal is transmitted from the switch transistor to the storage capacitor. In a memory time period, a memory switch of the control module is conducted to connect the storage capacitor and an OLED and the data signal is transmitted from the switch transistor to the storage capacitor. In a light-emitting time period, three light-emitting switches are conducted to connect the driving transistor to the storage capacitor, the first voltage end and the OLED.

Abstract: Disclosed herein is a method for manufacturing an active array substrate. The method includes the steps of: forming a first patterned metal layer on a substrate; sequentially forming a semiconductor layer, an insulating layer and a second metal layer to cover the first patterned metal layer; forming a patterned photoresist layer on the second metal layer; patterning the second metal layer, the insulating layer and the semiconductor layer to form a second patterned metal layer, a patterned insulating layer and a patterned semiconductor layer, and removing a portion of the patterned photoresist layer; heating the remained portion of the patterned photoresist layer such that the remained portion is fluidized and transformed into a protective layer; and forming a pixel electrode.