Abstract: A thin film transistor structure including a substrate, a gate, an oxide semiconductor layer, a gate insulation layer, a source, a drain, a silicon-containing light absorption layer and an insulation layer is provided. The gate insulation layer is disposed between the oxide semiconductor layer and the gate. The oxide semiconductor layer and the gate are stacked in a thickness direction. The source and the drain contact the oxide semiconductor layer. A portion of the oxide semiconductor layer without contacting the source and the drain defines a channel region located between the source and the drain. The oxide semiconductor layer is located between the substrate and the silicon-containing light absorption layer. The silicon-containing light absorption layer has a band gap smaller than 2.5 eV. The insulation layer is disposed between the oxide semiconductor layer and the silicon-containing light absorption layer, and in contact with the silicon-containing light absorption layer.

Abstract: In a bistable display device having a driver circuit, the driver circuit has multiple electrical ports for electrically connecting to external circuits. The electric potential difference between any two neighboring ports is less than 10 volts so that electrical punch-through caused by great electric potential difference and short distance between the electrical ports is substantially avoided.

Abstract: Disclosed herein is a color filter, which includes a first substrate, a patterned color, resist layer, a patterned passivation layer, an adhesive layer and a second substrate. The patterned color resist layer is disposed on the first substrate. The patterned passivation layer is stacked on the patterned color resist layer. The adhesive layer covers the patterned protective layer. The second substrate is disposed on the adhesive layer. A display device having the color filter is disclosed herein as well.

Abstract: A color electronic paper device and manufacturing method thereof are provided. The device includes: a front panel; a color filter layer, placed over the front panel; a color protection layer, being a thermoplastic transparent layer placed over the color filter layer; an adhesive layer, placed over the color protection layer; and a cover, placed over the adhesive layer.

Abstract: An active device is disposed on a substrate. The active device includes a metal layer, a semiconductor channel layer, an insulating layer, a source and a drain. The metal layer has a metal oxide surface away from the substrate. The insulating layer is disposed between the metal layer and the semiconductor channel layer. The source and the drain are disposed at one side of the semiconductor channel layer. A portion of the semiconductor channel layer is exposed between the source and the drain. An orthogonal projection of the metal layer on the substrate at least covers an orthogonal projection of the portion of the semiconductor channel layer exposed by the source and the drain on the substrate.

Abstract: A method for manufacturing oxide thin film transistors includes steps of: forming a gate, a drain electrode, a source electrode, and an oxide semiconductor layer respectively. The oxide semiconductor layer is formed on the gate electrode; the drain electrode and the source electrode are formed at two opposite sides of the oxide semiconductor layer. The method further includes a step of depositing a dielectric layer of silicon oxide, and a reacting gas for depositing the silicon oxide includes silane and nitrous oxide. A flow rate of nitrous oxide is in a range from 10 to 200 standard cubic centimeters per minute (SCCM). Oxide thin film transistors manufactured by above method has advantages of low leakage, high mobility, and other integrated circuit member can be directly formed on the thin film transistor array substrate of a display device.

Abstract: A semiconductor device adapted for being disposed on a substrate is provided. The semiconductor device includes a pixel electrode, a drain, a semiconductor channel layer, a source, a gate insulation layer and a side-gate. The pixel electrode is disposed on the substrate. The drain is disposed on the pixel electrode and exposes a portion of pixel electrode. The semiconductor channel layer is disposed on the drain. The source is disposed on the semiconductor channel layer. The gate insulation layer is disposed on the substrate, at least covers the source and surrounds the semiconductor channel layer. The side-gate is disposed on the gate insulation layer and extendedly covers the substrate along at least one side of the gate insulation layer. An extending direction of a portion of the side-gate is identical to a stacking direction of the drain, the semiconductor channel layer and the source.

Abstract: An OLED driving circuit is provided. The OLED driving circuit comprises a switch transistor, a storage capacitor, a driving transistor and a control module. In a charging time period, a charging switch of the control module is conducted to connect the storage capacitor and a first voltage end and a data signal is transmitted from the switch transistor to the storage capacitor. In a memory time period, a memory switch of the control module is conducted to connect the storage capacitor and an OLED and the data signal is transmitted from the switch transistor to the storage capacitor. In a light-emitting time period, three light-emitting switches are conducted to connect the driving transistor to the storage capacitor, the first voltage end and the OLED.

Abstract: A thin film transistor and a fabrication method thereof are provided. A metal patterning layer is formed on the metal oxide semiconductor layer of a thin film transistor to shield the metal oxide semiconductor layer from the water, oxygen and light in the environment.

Abstract: A pixel driving circuit, a pixel driving method and a light emitting display device are provided in the present invention. The pixel driving circuit includes first through fifth transistors and a capacitor and is for driving a light emitting diode. The third transistor forms a diode connection to make information of the threshold voltages of both the third transistor and the light emitting diode be stored in the capacitor in a data writing period. In a light emitting period, the second transistor compensates drift variation of the threshold voltages of the third transistor and the light emitting diode according to the information stored in the capacitor to provide a stable driving current for driving the light emitting diode.

Abstract: A method for manufacturing a color display provides a bottom substrate, injects a liquid display media onto the bottom substrate, and disposes a sealing substrate on the liquid display media, such that the liquid display media is contained between the sealing substrate and the bottom substrate. The method also aligns an image device corresponding to the bottom substrate and transfers a color coating onto the sealing substrate by a laser device through a laser thermal transfer process to form a color filter layer on the sealing substrate.

Abstract: A thin film transistor (TFT) structure includes a metal oxide semiconductor layer, a gate, a source, a drain, a gate insulation layer, and a passivation layer. The metal oxide semiconductor layer has a crystalline surface which is constituted by a plurality of grains separated from one another. An indium content of the grains accounts for at least 50% of all metal elements of the metal oxide semiconductor layer. The gate is disposed on one side of the metal oxide semiconductor layer. The source and the drain are disposed on the other side of the metal oxide semiconductor layer. The gate insulation layer is disposed between the gate and the metal oxide semiconductor layer. The passivation layer is disposed on the gate insulation layer, and the crystalline surface of the metal oxide semiconductor layer is in direct contact with the gate insulation layer or the passivation layer.

Abstract: Disclosed herein is a method for manufacturing an active array substrate. The method includes the steps of: forming a first patterned metal layer on a substrate; sequentially forming a semiconductor layer, an insulating layer and a second metal layer to cover the first patterned metal layer; forming a patterned photoresist layer on the second metal layer; patterning the second metal layer, the insulating layer and the semiconductor layer to form a second patterned metal layer, a patterned insulating layer and a patterned semiconductor layer, and removing a portion of the patterned photoresist layer; heating the remained portion of the patterned photoresist layer such that the remained portion is fluidized and transformed into a protective layer; and forming a pixel electrode.

Abstract: A display apparatus includes a driving substrate and an organic light emitting diode device. The driving substrate includes a display area, a non-display area, a substrate and a transparent driving element. The transparent driving element is disposed in the non-display area to form a transparent region. The organic light emitting diode device is disposed over the driving substrate and located in the display area to form a non-transparent region.

Abstract: A threshold voltage sensing circuit applied in a display panel includes a first sensor and a second sensor. The first sensor positioned in the display panel receives an operation signal at a regular time point after start-up and continuously receives multiple driving signals which are the same as those received by the pixel circuits of the display panel and outputs a first output voltage accordingly. The second sensor positioned in the display panel receives the driving signals at a regular time point after start-up and outputs a second output voltage accordingly. When the voltage difference between the first output voltage and the second output voltage is beyond a variation standard, the low level of the gate voltage of the pixel circuit is adjusted.

Abstract: A capacitor structure of capacitive touch panel including a first electrode layer, a first material layer, a second material layer and a second electrode layer is provided. The first material layer is disposed on the first electrode layer, and the material of the first material layer is selected from one of a semiconductor material and an insulating material. The second material layer is disposed on the first material layer, and the material of the second material layer is selected from another one of the semiconductor material and the insulating material. The second electrode layer is disposed on the second material layer.

Abstract: A method for manufacturing an active array substrate is provided herein. The active array substrate can be manufactured by using only two photolithography process steps. The photolithography process step using a first photomask may be provided for forming a drain electrode, a source electrode, a data line and/or a data line connecting pad and a patterned transparent conductive layer, etc. The photolithography process step using a second photomask may be utilized for forming a gate electrode, a gate line, a gate insulating layer, a channel layer and/or a gate line connecting pad, and so forth.

Abstract: A display panel having a wireless charging function is provided, and the display panel includes a first substrate, an induction coil layer, a display pixel layer, and a second substrate. The induction coil layer is disposed on the first substrate. The induction coil layer includes at least one induction coil. The induction coil layer is adapted for collaborating with a wireless charging power supply, such that the induction coil layer executes the wireless charging function. The display pixel layer is disposed on the induction coil layer. The second substrate is disposed on the display pixel layer.

Abstract: A light sensor including a photo transistor is provided. A gate of the photo transistor receives a gate driving signal. The photo transistor senses a light source based on the gate driving signal to generate a light current signal. The photo transistor includes a metal-oxide active layer. The gate driving signal has a first voltage level during a trap period and has a second voltage level during a read period. The first voltage level is higher than the second voltage level. The gate driving signal of the photo transistor introduces a mechanism to rapidly eliminate excess carriers. Accordingly, the photo transistor has a rapid response while maintaining good light responsibility. Furthermore, a method for driving the foregoing photo transistor is also provided.

Abstract: An electronic paper structure is disclosed, which includes a hard substrate, a flexible substrate, at least one magnetic device for fastening the flexible substrate on the hard substrate temporally, a drive substrate formed on the flexible substrate, an electronic paper display layer formed on the drive substrate, and a protect layer formed on the electronic paper display layer. An electronic paper fabricating method using the same is also disclosed.