Abstract: A transistor structure disposed on a substrate includes a gate electrode, an organic semiconductor layer, a gate insulation layer and a patterned metal layer. The gate insulation layer is disposed between the gate and the organic semiconductor layer. The patterned metal layer has a conductive oxidation surface and is divided into a source electrode and a drain electrode. A portion of the organic semiconductor layer is exposed between the source electrode and the drain electrode. The conductive oxidation surface directly contacts with the organic semiconductor layer.

Abstract: An organic light-emitting diode display device includes a substrate, a light-absorption layer, an active array structure, and an organic light-emitting diode. The substrate has a first and a second surface opposite to each other. The light-absorption layer is disposed on the first surface, and has at least one opening exposing a portion of the first surface. The active array structure is positioned on the second surface, and includes at least one data line, at least one gate line, and at least one switching device electrically connected to the gate and data lines. The light-absorption layer overlaps at least one of the data line and the gate line when viewed in a direction perpendicular to the substrate. The organic light-emitting diode is electrically connected to the switching device, and the organic light-emitting diode overlaps the opening when viewed in the direction perpendicular to the substrate.

Abstract: A light sensor including a photo transistor is provided. A gate of the photo transistor receives a gate driving signal. The photo transistor senses a light source based on the gate driving signal to generate a light current signal. The photo transistor includes a metal-oxide active layer. The gate driving signal has a first voltage level during a trap period and has a second voltage level during a read period. The first voltage level is higher than the second voltage level. The gate driving signal of the photo transistor introduces a mechanism to rapidly eliminate excess carriers. Accordingly, the photo transistor has a rapid response while maintaining good light responsibility. Furthermore, a method for driving the foregoing photo transistor is also provided.

Abstract: An organic-inorganic hybrid transistor comprises a flexible substrate, a gate electrode, an organic gate dielectric layer, an oxide semiconductor layer, a first passivation layer, a source electrode and a drain electrode. The gate electrode is disposed on the flexible substrate. The organic gate dielectric layer covers the gate electrode and a portion of the flexible substrate. The oxide semiconductor layer is disposed over the organic gate dielectric layer. The first passivation layer is interposed between and in contact with the oxide semiconductor layer and the organic gate dielectric layer. The source electrode and the drain electrode are respectively connected to different sides of the oxide semiconductor layer.

Abstract: An electric device with multi-screen includes a plurality of display modules and a plurality of flexible printed circuit boards. The display modules are electrically connected to each other by the flexible circuit printed boards. The display modules may display different images simultaneously for providing user different purposes. Furthermore, the electric device with multi-screen not only uses flexible circuit printed boards for connecting the display modules, the flexible display panel may be used in the display modules, so that the portable electric device with multi-screen may be flexible and the applications thereof may be increased.

Abstract: An electrophoretic display apparatus includes a driving substrate, an electrophoretic display medium layer and a color resist layer. The electrophoretic display medium layer is disposed on the driving substrate. The color resist layer is disposed on the electrophoretic display medium layer. The color resist layer includes pixel zones. The pixel zones include a first color zone, a second color zone, a third color zone, a fourth color zone and a vacant zone. The first color one and the third color zone are respectively positioned on two opposite edges of the vacant zone. The second color zone and the fourth color zone are respectively positioned on another two opposite edges of the vacant zone. The first color zone, the second color zone, the third color zone and the fourth color zone have different colors.

Abstract: An active device includes a gate, a gate insulation layer, a channel layer, a first passivation layer, a second passivation layer, a source and a drain. The gate insulation layer is disposed on the substrate and covers the gate. The channel layer is disposed on the gate insulation layer and has a semiconductor section disposed corresponding to the gate and a conductive section located around the semiconductor section. The first passivation layer is disposed on the channel layer and covers the semiconductor section. The second passivation layer is disposed on and covers the first passivation layer. The source and the drain are disposed on the gate insulation layer, and extended along peripheries of the conductive section, the first and the second passivation layers to be disposed on the second passivation layer. A portion of the second passivation layer is exposed between the source and the drain.

Abstract: A metal oxide semiconductor structure and a production method thereof, the structure including: a substrate; a gate electrode, deposited on the substrate; a gate insulation layer, deposited over the gate electrode and the substrate; an IGZO layer, deposited on the gate insulation layer and functioning as a channel; a source electrode, deposited on the gate insulation layer and being at one side of the IGZO layer; a drain electrode, deposited on the gate insulation layer and being at another side of the IGZO layer; a first passivation layer, deposited over the source electrode, the IGZO layer, and the drain electrode; a second passivation layer, deposited over the first passivation layer; and an opaque resin layer, deposited over the source electrode, the second passivation layer, and the drain electrode.

Abstract: An electric apparatus including a display and a process unit is provided. The display has an active area and a peripheral area. The display panel including an active device array substrate, an opposite substrate opposite to the active device array substrate and a display medium between the active device array substrate and the opposite substrate. The active device array substrate has a plurality of active devices disposed in the active area and a humidity sensor disposed in the peripheral area. The humidity sensor is a thin film transistor having a metal oxide semiconductor layer. The process unit is electrically connected to the humidity sensor. The process unit calculates a humidity value according to a sensing current from the humidity sensor.

Abstract: A photodiode, a light sensor and a fabricating method thereof are disclosed. An n-type semiconductor layer and an intrinsic semiconductor layer of the photodiode respectively comprise n-type amorphous indium gallium zinc oxide (IGZO) and intrinsic IGZO. The oxygen content of the intrinsic amorphous IGZO is greater than the oxygen content of the n-type amorphous IGZO. A light sensor comprise the photodiode is also disclosed.

Abstract: A vertical transistor and a manufacturing method thereof are provided herein. The manufacturing method includes forming a first patterned conductive layer on a substrate; forming a patterned metal oxide layer on the first patterned conductive layer, in which the patterned metal oxide layer includes a first patterned insulator layer, a second patterned insulator layer, and a second patterned conductive layer; forming a semiconductor layer; and forming a third patterned conductive layer. The first patterned insulator layer, the second patterned insulator layer, and the second patterned conductive layer are made by using a single metal oxide material. The oxygen concentration of the second patterned conductive layer is different from the oxygen concentrations of the first patterned insulator layer and the second patterned insulator layer.

Abstract: A thin file transistor includes a gate electrode, a source electrode, a drain electrode, a gate-insulating layer, and an oxide semiconductor layer. The oxide semiconductor layer includes indium-gallium-zinc oxide with a formula of InxGayZnzOw, in which x, y and z satisfy the following formulas 1.5?(y/x)?2 and 1.5?(y/z)?2. The gate-insulating layer is positioned between the gate electrode and the oxide semiconductor layer. The source electrode and the drain electrode are respectively connected to two different sides of the oxide semiconductor.

Abstract: An organic semiconductor device includes a carrier, a source, a drain, an organic semiconductor single-crystalline channel layer, an organic insulation layer and a gate. The source and the drain are disposed on an upper surface of the carrier. The source and the drain are disposed in parallel and a portion of the carrier is exposed between the source and the drain. The organic semiconductor single-crystalline channel layer is disposed on the upper surface of the carrier and covers a portion of the source, a portion of the drain and the portion of the carrier exposed by the source and the drain. The organic insulation layer covers the carrier, the source, the drain and the organic semiconductor single-crystalline channel layer. The gate is disposed on the organic insulation layer and corresponds to a position of the portion of the carrier exposed by the source and the drain.

Abstract: An organic light-emitting display device includes an active array substrate, an encapsulating layer, an organic light-emitting layer, an absorption layer and a sealant. The encapsulating layer is opposite to the active array substrate, and the encapsulating layer has an inner surface facing the active array substrate. The organic light-emitting layer is disposed on the active array substrate. The absorption layer is configured to absorb at least one of moisture and oxygen, and is positioned on the inner surface of the encapsulating layer.

Abstract: A manufacturing method for a flexible display apparatus is provided. A rigid substrate is provided. A flexible substrate having a supporting portion and a cutting portion surrounding the supporting portion is provided. A first adhesive material is formed between the rigid substrate and the cutting portion of the flexible substrate, so that the flexible substrate is adhered onto the rigid substrate by the first adhesive material. The first adhesive material does not locate on the supporting portion of the flexible substrate. At least a display unit is formed on the supporting portion of the flexible substrate. The supporting portion and the cutting portion of the flexible substrate are separated so as to separate the rigid substrate and the flexible substrate, wherein the flexible substrate and the display unit thereon form a flexible display apparatus. In the method, the flexible substrate and the rigid substrate can be easily separated.

Abstract: A compensation method for a light emitting diode (LED) circuit including a first transistor, a second transistor, a capacitor, and a LED is illustrated. A first end as a control end of the first transistor is connected to one end of the second transistor and the capacitor, and a second end of the first transistor is connected to the LED. A width to length (W/L) ratio of the second transistor is less than one. An initial control voltage is applied to a control end of the second transistor, and the current output voltage of the LED is correspondingly measured. If a difference between the current output voltage and an initial output voltage exceeds a predetermined value, a compensation voltage, which is a summation of the initial control voltage and the difference, is applied to the control end of the second transistor.

Abstract: Disclosed herein is an electrostatic discharge protection structure which includes a signal line, a thin-film transistor and a shunt wire. The thin-film transistor includes a gate electrode, a metal-oxide semiconductor layer, a source electrode and a drain electrode. The first metal-oxide semiconductor layer is disposed above the first gate electrode. The metal-oxide semiconductor layer has a channel region characterized in having a width/length ratio of less than 1. The source electrode is equipotentially connected to the gate electrode. The shunt wire is electrically connected to the drain electrode. When the signal line receives a voltage surge of greater than a predetermined magnitude, the voltage surge is shunted through the thin-film transistor to the shunt wire.

Abstract: A thin film transistor is provided. In this thin film transistor, the thickness of the gate is increased. Therefore, the source and drain of this thin film transistor can be disposed on the side wall of the gate to decrease the occupied area of the thin film transistor. An array substrate and a display device using the thin film transistor are also provided.

Abstract: A three-dimension circuit structure includes a substrate, a first conductive layer, a filled material and a second conductive layer. The substrate has an upper surface and a cavity located at the upper surface. The first conductive layer covers the inside walls of the cavity and protrudes out the upper surface. The filled material fills the cavity and covers the first conductive layer. The second conductive layer covers the filled material and a portion of the first conductive layer, and the first conductive layer and the second conductive layer encapsulate the filled material. The material of the filled material is different from that of the first conductive layer and the second conductive layer.

Abstract: Disclosed herein is a thin film transistor array substrate. The thin film transistor array substrate includes a display area and a non-display area. The non-display area includes a signal line, a connecting line and a metal contact. The connecting line is formed in a first patterned metal layer. The signal line and the metal contact are formed in a second patterned metal layer. The connecting line is connected to the signal line by a first through-hole, and the connecting line is connected to the metal contact by a second through-hole. Furthermore, a method of fabricating the thin film transistor array substrate is also disclosed.