Abstract: Provided is an electrode-forming material for an electrochemical capacitor useful for forming an electrode of an electrochemical capacitor having a high storage capacity and a high energy density. The electrode-forming material for an electrochemical capacitor according to an embodiment of the present invention includes boron-doped nanodiamond (A) having a specific surface area of 110 m2/g or greater and an electrical conductivity at 20° C. of 5.0×10?3 S/cm or greater; and a metal oxide (B), and the content of the (B) is from 20 to 95 mass % with respect to the total content of the (A) and (B).

Abstract: Disclosed is a memory device and an operation method thereof. The operation method of memory device, comprising: programming a plurality of sub-matrices including at least one of non-zero element of a rearranged matrix to a plurality of operation units of the memory device; and programming a mapping table into a working memory of a memory device. The rearranged matrix is generated by rearrange a plurality of columns and a plurality of rows of an original matrix according to the positions of a plurality of non-zero elements of the original matrix. The mapping table comprises a correspondence of row indexes between the original matrix and the rearranged matrix, a correspondence of column indexes between the original matrix and the rearranged matrix and a correspondence between the sub-matrices including at least one non-zero element and the operation units storing the sub-matrices including at least one non-zero element.

Abstract: Rigidified pentadentate chelating agents of Formulae (I) and (II), which are useful for the [Al18F]2+ labelling of biomolecules are provided. The rigidified pentadentate chelating agents are used to form coordination complexes with [Al18F]2+, which are particularly advantageous for use as tracers in molecular imaging techniques.

Abstract: The present disclosure describes an exemplary fin structure formed on a substrate. The disclosed fin structure comprises an n-type doped region formed on a top portion of the substrate, a silicon epitaxial layer on the n-type doped region, and an epitaxial stack on the silicon epitaxial layer, wherein the epitaxial stack comprises a silicon-based seed layer in physical contact with the silicon epitaxial layer. The fin structure can further comprise a liner surrounding the n-type doped region, and a dielectric surrounding the liner.

Abstract: The present invention provides a photo-exothermic composite material represented by Formula (I) of CNM-(Y1—R)n1 (I) (wherein, CNM denotes a carbon nanomaterial, Y1 denotes a divalent linking group, R denotes a group derived from a fluorescent substance or pigment; and n1 is an integer of 1 or greater).

Abstract: A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.

Abstract: An ink includes a boron-doped nanodiamond having a specific surface area of 110 m2/g or greater, and electrical conductivity at 20° C. of 5.0×10?3 S/cm or greater.

Abstract: A power converter according to the present disclosure includes a cooling plate and a plurality of circuit elements. The cooling plate includes a first cooling surface and a second cooling surface on an opposite side from the first cooling surface. The cooling plate is provided with a through hole passing through between the first and second cooling surfaces. The circuit elements convert AC power supplied from an external power source into DC power of a certain voltage and output the DC power. The circuit elements at least include first and second circuit elements. The first circuit element includes a first terminal and is thermally connected to the first cooling surface. The second circuit element includes a second terminal electrically connected to the first terminal and inserted into the through hole, and is thermally connected to the second cooling surface.

Abstract: A laser apparatus including an optical element made of a CaF2 crystal and configured to transmit an ultraviolet laser beam obliquely incident on one surface of the optical element, the electric field axis of the P-polarized component of the laser beam propagating through the optical element coinciding with one axis contained in <111> of the CaF2 crystal, with the P-polarized component defined with respect to the one surface. A method for manufacturing an optical element, the method including causing a seed CaF2 crystal to undergo crystal growth along one axis contained in <111> to form an ingot, setting a cutting axis to be an axis inclining by an angle within 14.18±5° with respect to the crystal growth direction toward the direction of another axis contained in <111>, which differs from the crystal growth direction, and cutting the ingot along a plane perpendicular to the cutting axis.

Abstract: A computer-implemented method and a system for configuring and implementing an artificial neural network. The method for configuring includes initializing an artificial neural network; and training, based on a training operation, the artificial neural network so as to form an adaptively deployable artificial neural network defining a plurality of nested artificial neural sub-networks. Each artificial neural sub-network is optimal for a respective resource configuration. The method for implementing includes determining an optimal configuration of the artificial neural network for deployment at an electrical device, and deploying the artificial neural network with the optimal configuration at the electrical device.

Abstract: For each sound of a model performance, performance information designating a sound generation timing and sound are supplied, and for each of a plurality of phrases into which the model performance is divided, intensity information indicative of an intensity of sound for the phrase is supplied. In accordance with a progression of a performance time and for each phrase of the model performance, the intensity information is acquired ahead of a start timing when a performance of the phrase is to be started, and the intensity of sound common to sounds in the phrase is presented based on the acquired intensity information. The intensity of the sound is presented in a visual or audible manner. In this way, a human player can know, through a visual display and/or an audible sound, an intensity of a key depression operation for each phrase of the model performance before starting the phrase. As a result, the human player can practice the performance while being aware of the intensity of sound for each phrase.

Abstract: The present disclosure describes an exemplary method to form p-type fully strained channel (PFSC) or an n-type fully strained channel (NFSC) that can mitigate epitaxial growth defects or structural deformations in the channel region due to processing. The exemplary method can include (i) two or more surface pre-clean treatment cycles with nitrogen trifluoride (NF3) and ammonia (NH3) plasma, followed by a thermal treatment; (ii) a prebake (anneal); and (iii) a silicon germanium epitaxial growth with a silicon seed layer, a silicon germanium seed layer, or a combination thereof.

Abstract: A FinFET device and a method of forming the same are disclosed. In accordance with some embodiments, a FinFET device includes a substrate having at least one fin, a gate stack across the at least one fin, a strained layer aside the gate stack and a silicide layer over the strained layer. The strained layer has a boron surface concentration greater than about 2E20 atom/cm3 within a depth range of about 0-5 nm from a surface of the strained layer.

Abstract: A storage device is disclosed herein. The storage device, comprises: a non-volatile memory including control circuitry and an array of memory cells formed using a set of word lines and a set of bit lines; and a reference current generator circuit configured to receive an input voltage from a voltage supply and generate therefrom a plurality of outputs, each output of the plurality of outputs used to generate one or more bias voltages/currents for one or more control signals. The control circuitry is configured to: receive a refresh read operation command; and adapt operation of the reference current generator circuit based on receiving the refresh read operation command. This proposal is also applicable for other test modes, such as SA stress, soft and preprogram, and SA test modes.

Abstract: A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.

Abstract: An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.

Abstract: A gas phase component analysis device and a gas phase component analysis method that can prevent degradation of the device due to an unnecessary component and can obtain excellent detection sensitivity are provided. A gas phase component analysis device (1) includes a heating unit (2) configured to heat a specimen to generate a gas phase component composite, a first column (31) into which the gas phase component composite is introduced, a second column (32) that is a separation column connected with the first column (31) through a connection unit (33), an isothermal oven (3) housing the first column (31), the second column (32), and the connection unit (33), a detection unit (4) configured to detect a gas phase component having passed through the second column (32), and a suction unit (5) connected with the connection unit (33).

Abstract: The application discloses Lactobacillus strains having a beneficial effect on the metabolic health on a mammalian subject. Further disclosed is compositions comprising such strains and the use thereof for improving the metabolic health or for lowering the blood glucose level in a mammalian subject.

Abstract: A gate structure, a semiconductor device, and the method of forming a semiconductor device are provided. In various embodiments, the gate structure includes a gate stack and a doped spacer overlying a sidewall of the gate stack. The gate stack contains a doped work function metal (WFM) stack and a metal gate electrode overlying the doped WFM stack.

Abstract: The present disclosure provides a memory system, a method of operating memory, and a non-transitory computer readable storage medium. The memory system includes a memory chip and a controller. The controller is coupled with the memory chip, which the controller is configured to: receive a first data corresponding to a first version from a file system in order to store the first data corresponding to the first version in a first page of the flash memory chip; and program the first data corresponding to a second version in the first page in response to the first data of the second version, which the second version is newer than the first version.